Doctor Waseda University 1996/2
Master Waseda University 1988/3 |
Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) - Electron device and electronic equipment
Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) - Electric and electronic materials |
| Nanoelectronics |
| semiconductor device, single dopant atom, electron spin resonance, charge pumping method |
・IEEE
・The Institute of Electronics Information and Communication Engineers （IEICE）
・The Japan Society of Applied Physics（JSAP) |
| https://wwp.shizuoka.ac.jp/nano/ |
[1]. Drag of electron–hole bilayer in silicon-on-insulator metal-oxide-semiconductor field-effect transistor at low temperature
Applied Physics Express 17/ 064003_1-5 (2024) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] Nabil Ahmed, Manjakavahoaka Razanoelina, Masahiro Hori, Akira Fujiwara, Yukinori Ono [DOI]
[2]. Electrical control of transient formation of electron-hole coexisting system at silicon metal-oxide-semiconductor interfaces
Communications Physics 6/1 - 316 (2023) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] Masahiro Hori, Jinya Kume, Manjakavahoaka Razanoelina, Hiroyuki Kageshima, Yukinori Ono [DOI]
[3]. Highly stable Fe/CeO2 catalyst for the reverse water gas shift reaction in the presence of H2S
RSC Advances 13/17 11525-11529 (2023) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] Ryo Watanabe, Fumiya Karasawa, Chikamasa Yokoyama, Kazumasa Oshima, Masahiro Kishida, Masahiro Hori, Yukinori Ono, Shigeo Satokawa, Priyanka Verma, and Choji Fukuhara [DOI]
[4]. Magnetometry of neurons using a superconducting qubit
Communications Physics 6/1 - 19 (2023) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] Hiraku Toida, Koji Sakai, Tetsuhiko F. Teshima, Masahiro Hori, Kosuke Kakuyanagi, Imran Mahboob, Yukinori Ono & Shiro Saito [DOI]
[5]. Room-temperature single-electron tunneling in highly-doped silicon-on-insulator nanoscale field-effect transistors
Applied Physics Express 15/6 065003_1-4 (2022) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] T. Teja Jupalli, A. Debnath, G. Prabhudesai, K. Yamaguchi, P. Jeevan Kumar, Y. Ono, D. Moraru [DOI]
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[1].
（2015）
[Book type]book(educational)
[Sole author, co-author, or author and editor] single work
[Author]小野 行徳
[Notes] https://www.morikita.co.jp/books/book/2839
[2]. "Silicon Single-Electron Devices," in Device Applications of Silicon Nanocrystals and Nanostructures
Springer, New York （2009）
[Book type]book(research)
[Sole author, co-author, or author and editor] joint work
[Author]Yasuo Takahashi,Yukinori Ono,Akira Fujiwara,Katsuhiko Nishiguchi,Hiroshi Inokawa
[3]. "Single-Electron Transistor and its Logic Application" in Nanotechnology
Wiley-VCH, Weinheim （2008）
[Book type]book(research)
[Sole author, co-author, or author and editor] joint work
[Author]Yukinori Ono,Hiroshi Inokawa,Yasuo Takahashi,Katsuhiko Nishiguchi,Akira Fujiwara |
[1]. シリコンMOS界面における電子正孔共存系の形成
第71回応用物理学会春季学術講演会 （2024/3/23） other
[Presenter]堀匡寛, 小野行徳
[Notes] 開催場所：東京都市大学 世田谷キャンパス
[2]. MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (10) –捕獲電子の再結合課程(Ⅲ)–
第71回応用物理学会春季学術講演会 （2024/3/23） other
[Presenter]土屋敏章, 堀匡寛, 小野行徳
[Notes] 開催場所：東京都市大学 世田谷キャンパス
[3]. MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (11) –捕獲電子の再結合課程(Ⅳ)–
第71回応用物理学会春季学術講演会 （2024/3/23） other
[Presenter]土屋敏章, 堀匡寛, 小野行徳
[Notes] 開催場所：東京都市大学 世田谷キャンパス
[4]. MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (8) –捕獲電子の再結合課程(Ⅰ)–
第84回応用物理学会秋季学術講演会 （2023/9/21） invited
[Presenter]土屋敏章, 堀匡寛, 小野行徳
[Notes] 開催場所：熊本城ホール
[5]. MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (9) –捕獲電子の再結合課程(Ⅱ)–
第84回応用物理学会秋季学術講演会 （2023/9/21） invited
[Presenter]土屋敏章, 堀匡寛, 小野行徳
[Notes] 開催場所：熊本城ホール
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[1]. funded (private)
member （ 2017/11 ～ 2023/3 ）
[Notes] 国立研究開発法人科学技術振興機構 CREST 戦略的創造研究推進事業
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[1]. MOSトランジスタ構造を基盤としたシリコン超伝導 （ 2022/6 ～ 2027/3 ） Challenging Research(Pioneering) leader
[2]. 電子流体効果を用いた新原理シリコンデバイスの研究 （ 2020/4 ～ 2024/3 ） Grant-in-Aid for Scientific Research (A) leader
[3]. シリコントランジスタのゲート制御による電子正孔系の形成と量子凝縮現象の発現 （ 2020/4 ～ 2024/3 ） Grant-in-Aid for Scientific Research (B) member
[4]. 新原理エレクトロニクス創成に向けた電子系一格子系・高速エネルギー変換技術の確立 （ 2017/6 ～ 2022/3 ） Challenging Research(Pioneering) leader
[5]. シリコン中のドーパント原子を用いた単一フォノン制御 （ 2016/4 ～ 2020/3 ） Grant-in-Aid for Scientific Research (A) leader
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[1]. 17th JSAP Fellow(2023) Study on Single-Charge Transport in SiO2/Si-Based Nanodevices （2023/6)
[Winner] Yukinori Ono [Association] The Japan Society of Applied Physics
[2]. （2023/3)
[Association] Japan Society for the Promotion of Science
[Notes] 学術システム研究センター専門研究員として功労に対しての感謝状
[3]. （2020/11)
[4]. Awards for Science and Technology(Research category) of the Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology （2020/4)
[Winner] Yukinori Ono [Association] Ministry of Education, Culture, Sports, Science and Technology Japan
[5]. 11th JSAP Silicon Technology Division Paper Award Electron Aspirator using Electron-Electron Scattering in Nanoscale Silicon （2020/3)
[Winner] Y. Ono, H. Firdaus, T. Watanabe, M. Hori, D. Moraru, Y. Takahashi, A. Fujiwara [Association] The Japan Society of Applied Physics
[Notes] 第67回応用物理学会春季学術講演会
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[1]. 走査型プローブ顕微鏡用探針 [Application Number] 特願2006-312723 (2006/11/20) [Patent Number] 特許第4680868号
[2]. ゲインセル・メモリ回路及びその駆動方法 [Application Number] 特願2006-6205 (2006/1/13) [Patent Number] 特許第4602912号
[3]. 単電子トランジスタ [Application Number] 特願2005-138479 (2005/5/11) [Patent Number] 特許第4704802号
[4]. 電界変調型単電子トランジスタ [Application Number] 特願2005-119782 (2005/4/18) [Patent Number] 特許第4648061号
[5]. ナノチューブの製造方法及びトランジスタの製造方法 [Application Number] 特願2005-092444 (2005/3/28) [Patent Number] 特許第4627206号
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