静岡大学：教員データベース

Researcher DataBase - Personal Information : ONO Yukinori

Papers, etc.

【Papers, etc.】
[1]. Drag of electron–hole bilayer in silicon-on-insulator metal-oxide-semiconductor field-effect transistor at low temperature Applied Physics Express 17/ 064003_1-5 (2024) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] Nabil Ahmed, Manjakavahoaka Razanoelina, Masahiro Hori, Akira Fujiwara, Yukinori Ono [DOI] [2]. Electrical control of transient formation of electron-hole coexisting system at silicon metal-oxide-semiconductor interfaces Communications Physics 6/1 - 316 (2023) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] Masahiro Hori, Jinya Kume, Manjakavahoaka Razanoelina, Hiroyuki Kageshima, Yukinori Ono [DOI] [3]. Highly stable Fe/CeO2 catalyst for the reverse water gas shift reaction in the presence of H2S RSC Advances 13/17 11525-11529 (2023) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] Ryo Watanabe, Fumiya Karasawa, Chikamasa Yokoyama, Kazumasa Oshima, Masahiro Kishida, Masahiro Hori, Yukinori Ono, Shigeo Satokawa, Priyanka Verma, and Choji Fukuhara [DOI] [4]. Magnetometry of neurons using a superconducting qubit Communications Physics 6/1 - 19 (2023) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] Hiraku Toida, Koji Sakai, Tetsuhiko F. Teshima, Masahiro Hori, Kosuke Kakuyanagi, Imran Mahboob, Yukinori Ono & Shiro Saito [DOI] [5]. Room-temperature single-electron tunneling in highly-doped silicon-on-insulator nanoscale field-effect transistors Applied Physics Express 15/6 065003_1-4 (2022) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] T. Teja Jupalli, A. Debnath, G. Prabhudesai, K. Yamaguchi, P. Jeevan Kumar, Y. Ono, D. Moraru [DOI] [6]. Critical conductance of two-dimensional electron gas in silicon-on-insulator metal-oxide-semiconductor field-effect transistor Applied Physics Express 14/10 104003-1-4 (2021) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] author [Author] M. Razanoelina, M. Hori, A. Fujiwara, Y. Ono [DOI] [7]. Detection of arsenic donor electrons using gate-pulse-induced spin-dependent recombination in silicon transistors Applied Physics Letters 118/26 263504_1-6 (2021) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] M. Hori, Y. Ono [DOI] [8]. Characteristics of Si Single-Electron Transistor under Illumination ECS Transactions 92/4 7-56 (2019) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] Y. Takahashi, M. Shinohara, A. T-Fukuchi, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa [9]. Coulomb-blockade transport in selectively-doped Si nano-transistors App.Phys.Express 12/8 085004_1-5 (2019) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper [Lead author or co-author] co-author [Author] Adnan Afiff, Arup Samanta, Arief Udhiarto, Harry Sudibyo, Masahiro Hori, Yukinori Ono, Michiharu Tabe, Daniel Moraru [DOI] [10]. Charge pumping under spin resonance in Si(100) metal-oxide-semiconductor transistors Phys. Rev. Applied 11/6 064064-1-12 (2019) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] M. Hori, Y. Ono [DOI] [11]. Single-charge band-to-band tunneling via multiple-dopant clusters in nanoscale Si Esaki diodes Appl. Phys. Lett. 114/24 243502-1-5 (2019) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper [Lead author or co-author] co-author [Author] G. Prabhudesai, M. Muruganathan, L. T. Anh, H. Mizuta, M. Hori, Y. Ono, M. Tabe, D. Moraru [DOI] [12]. Electron Aspirator using Elecron-electron Scattering in Nanoscale Silicon Nature communications 9/ 4813_1-8 (2018) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] author [Author] H. Firdaus, T. Watanabe, M. Hori, D. Moraru, Y. Takahashi, A. Fujiwara, Y. Ono [DOI] [13]. Detection of single holes generated by impact ionization in silicon Applied Physics Letters 113/16 163103_1-5 (2018) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] author [Author] H. Firdaus, T. Watanabe, M. Hori, D. Moraru, Y. Takahashi, A. Fujiwara, and Y. Ono [DOI] [14]. Detection and Characterization of Single Near-Interface Oxide Traps with the Charge Pumping Method Proceedings of 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) / 1-4 (2018) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] T. Tsuchiya, M. Hori, Y. Ono [DOI] [15]. Construction of KAGRA: an underground gravitational-wave observatory Progress of Theoretical and Experimental Physics 2018/1 - (2018) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper [Lead author or co-author] co-author [Author] T. Akutsu, Y. Ono et al., [DOI] [16]. Real-time Monitoring of Charge-pumping Proccess for SiO2/Si Interface Analysis QiR:2017 15th Intl. Conf. QiR: Intl. Symp. Elec. and Com. Eng. (vol)/(num) 52-56 (2017) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] author [Author] [責任著者]M.Hori [共著者]T.Watanabe,Y,Ono [17]. Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors Appl.Phys.Lett. 110/9 093107_1-5 (2017) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]D.Moraru [共著者]A.Samanta,M.Muruganathan,M.Hori,Y.Ono,H.Mizuta,M.Tabe,D.Moraru [DOI] [18]. EDMR on recombination process in silicon MOSFETs at room temperature Springer Advances in intelligent system and computing 519/ 89- 93 (2017) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]M.Hori [共著者]Y.Ono [Notes] IA Proceedings [DOI] [19]. Manipulation of single charges using dopant atoms in silicon – Interplay with intervalley phonon emission – Springer Advances in intelligent system and computing 519/ 137-141 (2017) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] author [Author] [責任著者]Y.Ono [共著者]M.Hori,G.P.Lansbergen,A.Fujiwara [Notes] IA Proceedings [DOI] [20]. Improvement of charge-pumping electrically detected magnetic resonance and its application to silicon metal-oxide-semiconductor field-effect transistor Appl. Phys. Express 10/1 015701_1-4 (2017) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]M.Hori [共著者]T.Tsuchiya,Y.Ono [DOI] [21]. Time-domain charge pumping on silicon-on-indulator MOS devices Jpn. J. Appl. Phys 56/1 011303_1-5 (2017) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] author [Author] [責任著者]Y.Ono [共著者]T.Watanabe,M.Hori,T.Tsuchiya,A.Fujiwara,Y.Ono [DOI] [22]. Fabrication and single-electron-transfer operation of a triple-dot single-electron transistor J. Appl. Phys. 118/21 214305-1-6 (2015) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]M. Jo [共著者]M. Jo, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi [DOI] [23]. Evaluation of accuracy of charge pumping current in time domain IEICE Trans. Electron. E98-C/5 390-394 (2015) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]Y. Ono [共著者]T. Watanebe, M. Hori, T. Tsuchiya, Y. Ono [DOI] [24]. Electrical activation and electron spin resonance measurements of arsenic implanted in silicon Appl. Phys. Lett. 106/14 142105_1-4 (2015) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]M. Hori [共著者]M. Uematsu, A. Fujiwara, Y. Ono [DOI] [25]. Direct observation of electron emission and recombination processes by time domain measurements of charge pumping current Appl. Phys. Lett. 106/4 041603_1-4 (2015) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]M. Hori [共著者]M. Hori, T. Watanabe, T. Tsuchiya, Y. Ono [DOI] [26]. Charge pumping current from single Si/SiO2 interface traps: Direct observation of Pb centers and fundamental trap-counting by the charge pumping method Jpn. J. Appl. Phys. 54/ 04DC01-1-7 (2015) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]T. Tsuchiya [共著者]T. Tsuchiya, Y. Ono [DOI] [27]. Analysis of electron capture process in charge pumping sequence using time domain measurements Appl. Phys. Lett. 105/26 261602_1-4- (2014) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]M. Hori [共著者]M. Hori, T. Watanabe, T. Tsuchiya, Y. Ono [DOI] [28]. Single-electron thermal noise Nanotechnology 25/27 275201-1-7 (2014) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]K. Nishiguchi [共著者] K. Nishiguchi, Y. Ono, A. Fujiwara [DOI] [29]. Electron spin resonance study on pure single crystalline sapphire Phys. Status Solidi C 10/12 1681- 1683 (2013) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] author [Author] [責任著者]Y. Ono [共著者]M. Hori, N. Fukumoto, Y. Ono, R. Chikaoka, S. Moriwaki [DOI] [30]. Electron and hole mobilities at a Si/SiO 2 interface with giant valley splitting Appl. Phys. Lett. 102/19 191603-1-4 (2013) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]Y. Niida [共著者]Y. Niida, K. Takashina, Y. Ono, A. Fujiwara, Y. Hirayama [DOI] [31]. Reduction of threshold voltage fluctuation in field-effect transistors by controlling individual dopant position Appl. Phys. Lett. 101/10 013503_1-3- (2012) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]M.Hori [共著者]M. Hori,K. Taira,A. Komatsubara,K. Kumagai,Y. Ono,T.Tanii,T.Endoh,T.Shinada [DOI] [32]. Donor-based single electron pumps with tunable donor binding energy Nano Letetrs 12/2 763-768 (2012) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]G.P.Lansbergen [共著者]G.P.Lansbergen,Y.Ono,A.Fujiwara [DOI] [33]. Bound exciton photoluminescence from ion-implanted phosphorus in thin silicon layers Optics Express 19/25 25255-25262 (2011) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]H.Sumikura [共著者]H. Sumikura,K. Nishiguchi,Y. Ono,A. Fujiwara,M. Notomi [DOI] [34]. Significance of the interface regarding magnetic properties of Mn-nanosilicide in silicon Thin Solid Films, 519/24 8505-8508 (2011) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] author [Author] [責任著者]Y. Ono [共著者]Y. Ono, Y. Miyazaki, S. Yabuuchi, H. Kageshima, M. Nagase, A. Fujiwara, E. Ohta [DOI] [35]. Impact of a few dopant positions controlled by deterministic single-ion doping on the transconductance of field-effect transistors Appl. Phys. Lett. 99/6 062103_1-3- (2011) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]T.Shinada [共著者]M. Hori,T. Shinada,Y. Ono,A. Komatsubara,K. Kumagai [DOI] [36]. Electrical measurements of terphenyl-based molecular devices Jpn. J. Appl. Phys 50/7 071603-1-6 (2011) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]T. Goto [共著者]T. Goto, H. Inokawa, Y. Ono, A. Fujiwara, K. Torimitsu [DOI] [37]. Carrier transport in indium-doped p-channel silicon-on-insulator transistors doped with indium between 30 and 285 K J. Appl. Phys. 110/19 014512-1-6 (2011) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]M. A. H. Khalafalla [共著者]M. A. H. Khalafalla,Y. Ono,J. Noborisaka,G. P. Lansbergen,A. Fujiwara [DOI] [38]. Single-electron counting statistics of shot noise in nanowire Si MOSFETs Appl. Phys. Lett. 98/19 193502-1-3 (2011) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]K. Nishiguchi [共著者]K. Nishiguchi,Y. Ono,A. Fujiwara [DOI] [39]. Enhancing secondary electron detection efficiency by applying a substrate bias voltage for deterministic single-ion Doping Appl. Phys. Express 4/4 046501_1-2 (2011) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]T. Shinada [共著者]M. Hori, T. Shinada, K. Taira, A. Komatsubara, Y. Ono, T. Tanii, T. Endoh, I. Ohdomari [DOI] [40]. Si Nanodot device fabricated by thermal oxidation and their applications Key Engineering Materials 470/3 175-183 (2011) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]Y. Takahashi [共著者]Y. Takahashi,M. Jo,T. Kaizawa,Y. Kato,M. Arita,A. Fujiwara ,Y. Ono,H. Inokawa,J.-B. Choi [DOI] [41]. Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors Appl. Phys. Lett. 98/3 033503-1-3 (2011) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]J. Noborisaka [共著者]J. Noborisaka,K. Nishiguchi,Y. Ono,H. Kageshima,A. Fujiwara: [DOI] [42]. Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding Semicond. Sci. Technol. 25/12 125001-1-4 (2010) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]K. Takashina [共著者]K. Takashina, M. Nagase, K. Nishiguchi, Y. Ono, H. Omi, A. Fujiwara, T. Fujisawa, K. Muraki [DOI] [43]. Resonant escape over an oscillating barrier in a single-electron ratchet transfer Phys. Rev. B 82/3 033303-1-4 (2010) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]S. Miyamoto [共著者]S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, A. Fujiwara [DOI] [44]. Single-electron transport through single dopants in a dopant-rich environment Phys. Rev. Lett 105/1 016803-1-4 (2010) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]M. Tabe [共著者]M. Tabe,D. Moraru,M. Ligowski,M. Anwar,R. Jablonski,Y. Ono,T. Mizuno [DOI] [45]. Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors Appl. Phys. Lett. 96/11 112102-1-3 (2010) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]J. Noborisaka [共著者]J. Noborisaka,K. Nishiguchi,H. Kageshima,Y. Ono,A. Fujiwara: [DOI] [46]. Fabrication of double-dot single-electron transistor in silicon nanowire Thin Solid Films 518/6S1 S186-S189 (2010) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]M. Jo [共著者]M. Jo,T. Kaizawa,M. Arita,A. Fujiwara,Y. Ono,K. Nishiguchi,H. Inokawa,Y. Takahashi,J.-B. Choi [DOI] [47]. Si nanodot array device with multiple gates Material Science in Semiconductor Processing 11/5-6 175-178 (2009) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]M.Jo [共著者]M. Jo,T. Kaizawa,M. Arita,A. Fujiwara,K. Yamazaki,Y. Ono,H. Inokawa,Y. Takahashi,J.-B. Choi [48]. Single-electron device with Si nanodot array and multiple input gates IEEE Trans. Nanotechnology 8/4 535-541 (2009) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]T. Kaizawa [共著者]T. Kaizawa,M. Jo,M. Arita,A. Fujiwara,K. Yamazaki,Y. Ono,H. Inokawa,Y. Takahashi,J.-B. Choi [49]. Full adder operation based on Si nanodot array device with multiple inputs and outputs International Journal of Nanotechnology and Molecular Computation 1/2 58-69 (2009) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]T. Kaizawa [共著者]T. Kaizawa,M. Jo,M. Arita,A. Fujiwara,K. Yamazaki,Y. Ono,H. Inokawa,Y. Takahashi,J.-B. Choi [50]. Horizontal position analysis of single acceptors in Si nanoscale field-effect transistors Appl. Phys. Lett. 94/22 223501-1-223501-3 (2009) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]M. A. H. Khalafalla [共著者]M. A. H. Khalafalla,Y. Ono,K. Nishiguchi,A. Fujiwara [51]. Electrons and holes in a 40nm thick silicon slab at cryogenic temperatures Appl. Phys. Lett. 94/14 142104-1-142104-3 (2009) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]K. Takashina [共著者]K. Takashina,K. Nishiguchi,Y. Ono,A. Fujiwara,T. Fujisawa,Y. Hirayama,K. Muraki [52]. Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor Appl. Phys. Lett. 93/22 222103-1-222103-3 (2008) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]S. Miyamoto [共著者]S. Miyamoto,K. Nishiguchi,Y. Ono,K. M. Itoh,A. Fujiwara [53]. Single-electron-resolution electrometer based on field-effect transistor Jpn. J. Appl. Phys. 47/11 8305-8310 (2008) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]K. Nishiguchi [共著者]K. Nishiguchi,C. Koechlin,Y. Ono,A. Fujiwara,H. Inokawa,H. Yamaguchi [54]. Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability J. Appl. Phys. 104/3 033710-1-033710-12 (2008) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]N. M. Zimmerman [共著者]N. M. Zimmerman,W. H. Huber,B. Simonds,E. Hourdakis,A. Fujiwara,Y. Ono,Y. Takahashi,H. Inokawa,M. Furlan,M. W. Keller [55]. First-principles study on origin of ferromagnetism of MnSi1.7 nanoparticles in Si Phys. Rev. B 78/4 045307-1-045307-7 (2008) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]S. Yabuuchi [共著者]S. Yabuuchi,H. Kageshima,Y. Ono,M. Nagase,A. Fujiwara,E. Ohta [56]. Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics Appl. Sur. Sci. 254/19 6252-6256 (2008) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper [Lead author or co-author] author [Author] [責任著者]Y. Ono [共著者]Y. Ono,M. Khalafalla,K. Nishiguchi,K. Takashina,A. Fujiwara,S. Horiguchi,H. Inokawa,Y. Takahashi [57]. A reliable method for the counting and control of single ions for single-dopant controlled devices Nanotechnology 19/34 345202-1-4 (2008) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]T. Shinada [共著者]T. Shinada, T. Kurosawa, H. Nakayama, Y. Zhu, M. Hori [58]. Ferromagnetism of manganese-silicide nanopariticles in Silicon Jpn. J. Appl. Phys 47/6 4487-4450 (2008) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]S. Yabuuchi [共著者]S. Yabuuchi,Y. Ono,H. Kageshima,M. Nagase,A. Fujiwara,E. Ohta [59]. A gate-defined silicon quantum dot molecule Appl. Phys. Lett. 92/22 222104-1-222104-3 (2008) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]H. W. Liu [共著者]H. W. Liu,T. Fujisawa,H. Inokawa,Y. Ono,A. Fujiwara,Y. Hirayama [60]. Silicon single-charge transfer devices J. Phys. Chem. Solids 69/2-3 702-707 (2008) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] author [Author] [責任著者]Y. Ono [共著者]Y. Ono,A. Fujiwara,K. Nishiguchi,Y. Takahashi,H. Inokawa [61]. Pauli-spin-blockade transport through a silicon double quantum dot Phys. Rev. B 77/7 073310-1-073310-4 (2008) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper [Lead author or co-author] co-author [Author] [責任著者]H. W. Liu [共著者]H. W. Liu,T. Fujisawa,Y. Ono,H. Inokawa,A. Fujiwara,K. Takashina,Y. Hirayama [62]. 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Appl. Phys. Lett. 62/4 375-377 (1993) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] author
[Author] [責任著者]Y. Ono [共著者]Y. Ono,M. Tabe,Y. Sakakibara
[119]. Influence of effective masses on the oscillation of Fowler-Nordheim tunneling in thin SiO2 MOS capacitors
Jpn. J. Appl. Phys 29/11 2381-2385 (1990) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] author
[Author] [責任著者]Y. Ono [共著者]Y. Ono,T. Makino