[1]. Development of BGaN Semiconductor Devices for Neutron Semiconductor Detectors Journal of the Japanese Association for Crystal Growth 52/3 - 52-3-02 (2025) [Refereed] non-refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] author [Author] 中野貴之 [2]. Enhanced growth of ultra-high density carbon nanotube forests via Fe and Al vapor addition in a CVD process Carbon 243/ - 120537 (2025) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] Sota Goto, Takayuki Nakano, Hisashi Sugime, Yoku Inoue [DOI] [3]. Enhancing thermal conduction properties of vertically aligned CNT forests by reducing interfacial thermal resistance using an aluminum interlayer Carbon 238/ - 120256 (2025) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] Kosuke Hayashi, Takayuki Nakano, and Yoku Inoue [DOI] [4]. Crystallinity and CNT–CNT Interface Effects on Thermal and Electrical Conductivity in Ultralong CNT Bundles and Yarns The Journal of Physical Chemistry C 192/20 9451-9458 (2025) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] Haruto Kurono, Hiromu Hamasaki, Takayuki Nakano, Hiroya Ikeda, Hisashi Sugime, Yoku Inoue [DOI] [5]. Impact of dynamic density decay of growing carbon nanotube forests on electrical resistivity Carbon 218/ - 118749 (2024) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper [Lead author or co-author] co-author [Author] Kazuki Nishita, Takayuki Nakano, Yasuhiro Shimizu, Masaki Nagata, Sota Yanai, Nobuaki Shirai, Terumasa Omatsu, and Yoku Inoue [DOI]
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[1]. CNT/エポキシ複合材料のホットメルト法最適化による力学特性の向上 日本機械学会 M&M2025 材料力学カンファレンス (2025/11/11) other [Presenter]藤本健斗, 井上翼, 島村 佳伸, 中野貴之 [Notes] OS1107, 熊本城ホール (熊本県熊本市), 2025年11月10日- 13日 [2]. 自立 GaN 基板を用いた縦型中性子検出器の作製と評価 第54回結晶成長国内会議(JCCG-54) (2025/11/11) other [Presenter]安藤光佑,竹中壮太郎, 豊田耕平, 都木克之, 小久保瑛斗, 本田善央, 天野浩, 井上翼, 青木徹, 中野貴之 [Notes] 11a-B09, 金沢商工会議所会館(石川県金沢市), 2025年11月11日-13日 [3]. Prototype of BGaN detectors utilizing AlN buffer layer designed for a high-temperature tolerant neutron detector 2025 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room Temperature Semiconductor Detector Conference (2025 IEEE NSS MIC RTSD) (2025/11/4) other [Presenter]R. Suzuki, A. Hayashi, E. Kokubo, G. Wakabayashi, Y. Honda, H. Amano, Y. Inoue, T. Aoki, T. Nakano [Notes] R-05-408, Yokohama, Japan [4]. Impact of Substrate Off-Angle on Device Performance for BGaN Neutron Detectors 2025 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room Temperature Semiconductor Detector Conference (2025 IEEE NSS MIC RTSD) (2025/11/4) other [Presenter]R. Saito, R. Kudo, T. Sakurai, E. Kokubo, G. Wakabayashi, Y. Honda, H. Amano, Y. Inoue, T. Aoki, T. Nakano [Notes] R-05-407, Yokohama, Japan [5]. Prototype and evaluate free-standing BGaN neutron detectors using GaN substrates 2025 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room Temperature Semiconductor Detector Conference (2025 IEEE NSS MIC RTSD) (2025/11/4) other [Presenter]S. Takenaka, T. Sakurai, R. Kudo, E. Kokubo, K. Takagi, T. Oda, M. Hino, Y. Honda, H. Amano, Y. Inoue, T. Aoki, T. Nakano [Notes] R-05-406, Yokohama, Japan
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[1]. joint (with other institution) member ( 2025/4 ~ 2026/3 ) [Notes] 代表:山口智広教授(工学院大学先進工学部応用物理学科)
[2]. joint (with other institution) member ( 2025/4 ~ 2026/3 ) [Notes] 代表:岡田成仁准教授(山口大学大学院創世科学研究科)
[3]. joint (with other institution) member ( 2024/4 ~ 2025/3 ) [Notes] 代表:岡田成仁准教授(山口大学大学院創世科学研究科)
[4]. joint (with other institution) member ( 2024/4 ~ 2025/3 ) [Notes] 代表:山口智広教授(工学院大学先進工学部応用物理学科)
[5]. joint (with other institution) member ( 2023/4 ~ 2024/3 ) [Notes] 代表:山口智広教授(工学院大学先進工学部応用物理学科)
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[1]. 極限環境に耐える新規中性子検出器の創製 ( 2025/6 ~ 2027/3 ) Challenging Research(Exploratory) member [2]. 新奇材料エピタキシャル融合による窒化物半導体の機能拡張 ( 2023/10 ~ 2027/3 ) Fund for the Promotion of Joint International Research member [3]. BGaN検出器を用いた疑似直接検出法による超高解像中性子イメージング技術開発 ( 2023/4 ~ 2027/3 ) Grant-in-Aid for Scientific Research (A) leader [4]. ダイヤモンド放射線検出器による高感度中性子検出の原理解明 ( 2023/4 ~ 2026/3 ) Grant-in-Aid for Scientific Research (C) member [5]. BGaN半導体検出器を用いた熱中性子イメージングセンサーの開発 ( 2019/4 ~ 2022/3 ) Grant-in-Aid for Scientific Research (B) leader
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[1]. 過酷環境下における中性子検出に向けたBGaN高温中性子検出器の開発 (2025/4 - 2028/3 ) [Offer orgnization] 公益財団法人 岩谷直治記念財団 [System name] 第2回岩谷科学技術特別研究助成 [Role] principal investigator [2]. 次世代原子炉用核計装を目指した高温中性子検出半導体の開発 (2025/4 - 2027/3 ) [Offer orgnization] 中部電力 原子力安全研究所 [System name] 中部電力原子力安全研究所公募研究 [Role] principal investigator [3]. 過酷環境下で動作可能な新規BGaN中性子半導体検出器に向けた高品質結晶成長技術の開発 (2023/11 - 2024/10 ) [Offer orgnization] 公益財団法人天野工業技術研究所 [System name] 天野工業技術研究所研究助成 [Role] principal investigator [4]. Influence of Device Structure on Detection Characteristics in BGaN Detectors (2023/4 - 2024/3 ) [Offer orgnization] 公益財団法人池谷科学技術振興財団 [System name] 研究者海外派遣助成 [Role] principal investigator [5]. 高温環境下で動作可能なBGaN中性子半導体検出器の開発 (2022/4 - 2024/3 ) [Offer orgnization] 中部電力 原子力安全研究所 [System name] 中部電力原子力安全研究所公募研究 [Role] principal investigator
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[1]. Best presentation award STEMa 2022 Study of Novel Neutron Detector Using Vertical Type BGaN Semiconductor (2022/8) [Winner] Takayuki Nakano [Association] International Conference on Science and Technology of Emerging Materials 2022 (STEMa2022) [Notes] SSM-OR06, Holiday Inn, Pattaya, THAILAND, August 4-6, 2022 [2]. (2008/11) [Notes] 授与・助成団体名(財団法人浜松電工学奨励会)
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[1]. 中性子半導体検出構造、中性子半導体検出器、及び中性子半導体検出構造の製造方法 [Application Number] 特願2017-068686 (2017/3/30) [Patent Number] 第6856214号 (2021/3/22) [Notes] 国立大学法人静岡大学、国立大学法人東北大学 [2]. 中性子半導体検出器 [Application Number] 特願2017-037321 (2017/2/28) [Patent Number] 第6948668号 (2021/9/24) [Notes] 国立大学法人静岡大学、株式会社ANSeeN [3]. カーボンナノチューブフォレストを備える紡績源部材の製造方法 [Application Number] 特願2017-524908 (2016/6/21) [Patent Number] 第6600891号 (2019/10/18) [Notes] 国立大学法人静岡大学、JNC株式会社 [4]. カーボンナノチューブフォレストを備える紡績源部材の製造方法 [Application Number] 特願2017-524907 (2016/6/21) [Patent Number] 第6667849号 (2020/2/28) [Notes] 国立大学法人静岡大学、JNC株式会社 [5]. CNTフォレスト、CNTフォレストの製造方法、紡績源部材、構造体および構造体の製造方法 [Application Number] 特願2016-570492 (2015/10/26) [Patent Number] 第6667848号 (2020/2/28) [Notes] 国立大学法人静岡大学、JNC株式会社
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[1]. International Workshop on Nitride Semiconductors 2026 (2026/11) [Role at conference, etc.] other [Site of conference, etc.] Kumamoto, Japan [Notes] Local arrangement committee [2]. 2026 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room Temperature Semiconductor Detector Conference (2025 IEEE NSS MIC RTSD) (2026/11) [Role at conference, etc.] other [Site of conference, etc.] Guranada, Spain [Notes] IEEE-RTSD International Advisory Committee [3]. 2025 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room Temperature Semiconductor Detector Conference (2025 IEEE NSS MIC RTSD) (2025/11) [Role at conference, etc.] other [Site of conference, etc.] Yokohama, Japan [Notes] IEEE-RTSD International Advisory Committee [4]. The 6th International Conference on Nano Electronics Research and Education (ICNERE2025) joint with the 27th Takayanagi Kenjiro Memorial Symposium (2025/10) [Role at conference, etc.] other [Site of conference, etc.] Hamamatsu, Japan [5]. The 11th International Symposium toward the Future of Advanced Research at Shizuoka University (ISFAR-SU2025) (2025/3) [Role at conference, etc.] other [Site of conference, etc.] Zoom Distribution
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