Doctor Waseda University 1996/2
Master Waseda University 1988/3 |
Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) - Electron device and electronic equipment
Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) - Electric and electronic materials |
| Nanoelectronics |
| semiconductor device, single dopant atom, electron spin resonance, charge pumping method |
・The Japan Society of Applied Physics（JSAP)
[Note]フェロー（2023年）
・IEEE |
| https://wwp.shizuoka.ac.jp/nano/ |
[1]. Electron thermometry for Si MOS inversion layer using proximity nano-transistor and its application to Joule-heating experiment
Appl. Phys. Lett. 126/ - 083501_1-6 (2025) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] author
[Author] Hossain Md Nayem, Masahiro Hori, Katsuhiko Nishiguchi, Yukinori Ono [DOI]
[2]. Drag of electron–hole bilayer in silicon-on-insulator metal-oxide-semiconductor field-effect transistor at low temperature
Applied Physics Express 17/ 064003_1-5 (2024) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] Nabil Ahmed, Manjakavahoaka Razanoelina, Masahiro Hori, Akira Fujiwara, Yukinori Ono [DOI]
[3]. Electrical control of transient formation of electron-hole coexisting system at silicon metal-oxide-semiconductor interfaces
Communications Physics 6/1 - 316 (2023) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] Masahiro Hori, Jinya Kume, Manjakavahoaka Razanoelina, Hiroyuki Kageshima, Yukinori Ono [DOI]
[4]. Highly stable Fe/CeO2 catalyst for the reverse water gas shift reaction in the presence of H2S
RSC Advances 13/17 11525-11529 (2023) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] Ryo Watanabe, Fumiya Karasawa, Chikamasa Yokoyama, Kazumasa Oshima, Masahiro Kishida, Masahiro Hori, Yukinori Ono, Shigeo Satokawa, Priyanka Verma, and Choji Fukuhara [DOI]
[5]. Magnetometry of neurons using a superconducting qubit
Communications Physics 6/1 - 19 (2023) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] Hiraku Toida, Koji Sakai, Tetsuhiko F. Teshima, Masahiro Hori, Kosuke Kakuyanagi, Imran Mahboob, Yukinori Ono & Shiro Saito [DOI]
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[1].
（2015）
[Book type]book(educational)
[Sole author, co-author, or author and editor] single work
[Author]小野 行徳
[Notes] https://www.morikita.co.jp/books/book/2839
[2]. "Silicon Single-Electron Devices," in Device Applications of Silicon Nanocrystals and Nanostructures
Springer, New York （2009）
[Book type]book(research)
[Sole author, co-author, or author and editor] joint work
[Author]Yasuo Takahashi,Yukinori Ono,Akira Fujiwara,Katsuhiko Nishiguchi,Hiroshi Inokawa
[3]. "Single-Electron Transistor and its Logic Application" in Nanotechnology
Wiley-VCH, Weinheim （2008）
[Book type]book(research)
[Sole author, co-author, or author and editor] joint work
[Author]Yukinori Ono,Hiroshi Inokawa,Yasuo Takahashi,Katsuhiko Nishiguchi,Akira Fujiwara |
[1]. MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (14) -平均的CP電流
第72回応用物理学会秋季学術講演会 （2025/3/15） other
[Presenter]土屋 敏章, 堀 匡寛, 小野 行徳
[Notes] 東京理科大学, 千葉
[2]. MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (15) -DOSの分析(I)-
第72回応用物理学会秋季学術講演会 （2025/3/15） other
[Presenter]土屋 敏章, 堀 匡寛, 小野 行徳
[Notes] 東京理科大学, 千葉
[3]. MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (16) -DOSの分析(Ⅱ)-
第72回応用物理学会秋季学術講演会 （2025/3/15） other
[Presenter]土屋 敏章, 堀 匡寛, 小野 行徳
[Notes] 東京理科大学, 千葉
[4]. Electron thermometry using subthreshold swing of Si nano transistors
37th International Microprocesses and Nanotechnology Conference (MNC 2024) （2024/11/14） other
[Presenter]Hossain Md Nayem, Masahiro Hori, Katsuhiko Nishiguchi, Yukinori Ono
[Notes] Kyoto Brighton Hotel, Kyoto, Japan
[5]. MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (12)
2024年第85回応用物理学会秋季学術講演会 （2024/9/） other
[Presenter]土屋 敏章, 堀 匡寛, 小野 行徳
[Notes] 朱鷺メッセほか
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[1]. funded (private)
member （ 2017/11 ～ 2023/3 ）
[Notes] 国立研究開発法人科学技術振興機構 CREST 戦略的創造研究推進事業
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[1]. シリコンMOS構造を基盤とした電子流体エレクトロニクス創生 （ 2024/4 ～ 2028/3 ） Grant-in-Aid for Scientific Research (A) leader
[2]. MOSトランジスタ構造を基盤としたシリコン超伝導 （ 2022/6 ～ 2027/3 ） Challenging Research(Pioneering) leader
[3]. 電子流体効果を用いた新原理シリコンデバイスの研究 （ 2020/4 ～ 2024/3 ） Grant-in-Aid for Scientific Research (A) leader
[4]. シリコントランジスタのゲート制御による電子正孔系の形成と量子凝縮現象の発現 （ 2020/4 ～ 2024/3 ） Grant-in-Aid for Scientific Research (B) member
[5]. 新原理エレクトロニクス創成に向けた電子系一格子系・高速エネルギー変換技術の確立 （ 2017/6 ～ 2022/3 ） Challenging Research(Pioneering) leader
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[1]. （2025/4)
[Winner] Yukinori Ono
[2]. 17th JSAP Fellow(2023) Study on Single-Charge Transport in SiO2/Si-Based Nanodevices （2023/6)
[Winner] Yukinori Ono [Association] The Japan Society of Applied Physics
[3]. （2023/3)
[Association] Japan Society for the Promotion of Science
[Notes] 学術システム研究センター専門研究員として功労に対しての感謝状
[4]. （2022/4)
[Winner] Yukinori Ono
[5]. （2020/11)
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[1]. 走査型プローブ顕微鏡用探針 [Application Number] 特願2006-312723 (2006/11/20) [Patent Number] 特許第4680868号
[2]. ゲインセル・メモリ回路及びその駆動方法 [Application Number] 特願2006-6205 (2006/1/13) [Patent Number] 特許第4602912号
[3]. 単電子トランジスタ [Application Number] 特願2005-138479 (2005/5/11) [Patent Number] 特許第4704802号
[4]. 電界変調型単電子トランジスタ [Application Number] 特願2005-119782 (2005/4/18) [Patent Number] 特許第4648061号
[5]. ナノチューブの製造方法及びトランジスタの製造方法 [Application Number] 特願2005-092444 (2005/3/28) [Patent Number] 特許第4627206号
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