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静岡大学教員データベース - 教員個別情報 : 池田 浩也 (IKEDA Hiroya)

論文 等

【論文 等】
[1]. Interfacial energy barrier tuning in MnO2/MoS2/Carbon fabric integrated with low resistance textrode for highly efficient wearable thermoelectric generator
Carbon 218/ 118609-1-17 (2023年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] C. Suresh Prasanna, S. Harish, J. Archana, E. Senthil Kumara, H. Ikeda, M. Navaneethan [DOI]
[2]. Interface scattering induced low thermal conductivity in Ag2Se/MWCNT for enhanced thermoelectric application
Diamond & Related Materials 140/ 110344-1-11 (2023年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] R. Santhosh, R. Abinaya, S. Ponnusamy, H. Ikeda, M. Navaneethan
[3]. Solution processed polyaniline anchored graphene on conductive carbon fabric for high performance wearable thermoelectric generators
Materials Chemistry and Physics 306/ 128022-1-11 (2023年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] V. Shalini, R.K. Roghan, N.S. Santhosh, J. Archana, H. Ikeda, S. Harish, M. Navaneethan
[4]. Polarity switching via defect engineering in Cu doped SnSe0.75S0.25 solid solution for mid-temperature thermoelectric applications
Materials Research Express 10/5 - (2023年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] S. Athithya, K.P. Mohamed Jibri, S. Harish, K. Hayakawa, Y. Kubota, H. Ikeda, Y. Hayakawa, Y. Inatomi, M. Navaneethan, J. Archana
[5]. Controlled synthesis of monodispersed ZnO nanospindles decorated TiO2 mesosphere for enhanced electron transport in dye sensitized solar cell
CrystEngComm 25/ 3198-3209 (2023年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] S. Athithya, S. Harish, H .Ikeda, M. Navaneethan, J. Archana
[6]. Silver nanosphere/polycaprolactone coated cotton fabrics as hygienic textiles for health care industries
Biointerface Research in Applied Chemistry / - (2023年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] Antinate Shilpa S, Arthi C, Hikku G S *, Jeyasubramanian K, Pandiyarasan Veluswamy, Hiroya Ikeda
[7]. Probing an enhanced anisotropy Seebeck coefficient and low thermal conductivity in polycrystalline Al doped SnSe nanostructure
AIP Advances 13/1 015311-1-12 (2022年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] S. Athithya, K.P. Mohamed Jibri, S. Harish, K. Hayakawa, Y. Kubota, H. Ikeda, Y. Hayakawa, Y. Inatomi, M. Navaneethan, J. Archana
[8]. Plasmon effect of Ag nanoparticles on TiO2/rGO nanostructures for enhanced energy harvesting and environmental remediation
Nanomaterials 13/ 65-1-16 (2022年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] S Athithya, V.S. Manikandan, S Harish, K Silambarasan, S Gopalakrishnan, H. Ikeda, M Navaneethan *, J Archana
[9]. Enhancement of thermoelectric power factor via electron energy filtering in Cu doped MoS2 on carbon fabric for wearable thermoelectric generator applications
Journal of Colloid and Interface Science 633/ 120-131 (2022年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] V. Shalini, S. Harish, H. Ikeda, Y. Hayakawa, J. Archana, M. Navaneethan
[10]. Output Power Characterization of Flexible Thermoelectric Power Generators
IEICE Transactions on Electronics E105-C/10 639-642 (2022年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] D. Kansaku, N. Kawase, N. Fujiwara, F. Khan, A.P. Kristy, K.D. Nisha, T. Yamakawa, K. Ikeda, Y. Hayakawa, K. Murakami, M. Shimomura, H. Ikeda
[11]. Electromotive Force of Piezoelectric/Thermoelectric-Combined Power Generator under Vibration and Temperature Gradient
IEICE Transactions on Electronics E105-C/10 635-638 (2022年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] N. Kawamura, R. Suzuki, K. Naito, Y. Hayakawa, K. Murakami, M. Shimomura, H. Ikeda
[12]. Effect of antimony doping in mechanochemically synthesized Cu2ZnSnSe4
Journal of Materials Science: Materials in Electronics 33/ 10450--10460 (2022年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] Deepak Goyal, C.P. Goyal, H. Ikeda, Malar P
[13]. Effect of antimony doping in mechanochemically synthesized Cu2ZnSnSe4
Journal of Materials Science: Materials in Electronics 33/ 10450-10460 (2022年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] Deepak Goyal, C.P. Goyal, H. Ikeda, Malar P [DOI]
[14]. Hydrothermally synthesized ZnO and ZnO – rGO nanorods: Effect of post – annealing temperature and rGO incorporation on hydrogen sensing
Journal of Materials Science: Materials in Electronics 33/ 9455-9470 (2021年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] G.N. Narayanan, P. Ananthasubramanian, A.R. Rajendran, K. Annamalai, B. Subramanian, P. Veluswamy, H. Ikeda
[15]. Hierarchically ordered macroporous TiO2 architecture via self-assembled strategy for environmental remediation
Chemosphere 288/ 132236-1-10 (2021年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] S. Athithya, S. Harish, H. IKeda, M. Shimomura, Y. Hayakawa, J. Archana, M. Navaneethan
[16]. Improved electrochemical performance of Cu2NiSnS4 hierarchical nanostructures as counter electrode in dye sensitized solar cells
Materials Letters 307/ 130946-1-4 (2021年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] P. Baskaran, K.D. Nisha, S. Harish, R. Ramesh, H. Ikeda, J. Archana, M. Navaneethan
[17]. Effect of capping agent for synthesis of ZnO nanostructures on carbon fabrics for thermopower production
Journal of Materials Science: Materials in Electronics 33/ 9301-9311 (2021年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] A.P. Kristy, N. Kawase, M. Navaneethan,, K.D. Nisha, T. Yamakawa, K. Ikeda, M. Shimomura, Y. Hayakawa, H. Ikeda [DOI]
[18]. Enhanced catalytic performance of Cu2ZnSnS4/MoS2 nanocomposites based counter electrode for Pt-free dye-sensitized solar cells
Journal of Alloys and Compounds 894/ 162166-1-9 (2021年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] P. Baskaran, K.D. Nisha, S. Harish, H. Ikeda, J. Archana, M. Navaneethan [DOI]
[19]. Preparation and Characterization of Polyethylenimine Functionalized Reduced Graphene Oxide for Thermoelectric Applications
ECS Journal of Solid State Science and Technology 10/8 81014- (2021年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] S. Nanthini, M. Shalini, Suhasini Sathiyamoorthy, Kumar R., Hiroya Ikeda, Shankar H., Malik Maaza and Pandiyarasan Veluswamy
[20]. Reduced Graphene Oxide Wrapped α-Mn2O3/α-MnO2 Nanowires for Electrocatalytic Oxygen Reduction in Alkaline Medium
Journal of Materials Science: Materials in Electronics 33/ 8644-8654 (2021年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] Gokuladeepan Periyasamy; Indrajit M Patil; Bhalchandra Kakade; Pandiyarasan Veluswamy; Archana Jayaram; Hiroya Ikeda; Karthigeyan Annamalai
[21]. Measurement of Thermal Conductivity and Thermal Diffusivity of 1-Dimensional-System Material by Scanning Electron Microscopy and Infrared Thermography
AIP Advances 11/ 095101-1-6 (2021年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] P. Baskaran, R. Nanao, Y. Yamanashi, M. Sakaida, Y. Suzuki, M. Navaneethan, K.D. Nisha, Y. Hayakawa, H. Inokawa, M. Shimomura, K. Murakami, H. Ikeda
[22]. Interface effect of graphene oxide in MoS2 layered nanosheets for thermoelectric application
Journal of Materials Science: Materials in Electronics 33/ 8711-8723 (2021年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] A.P. Kristy, S. Harish, M. Omprakash, K.D. Nisha, H. Ikeda, M. Navaneethan
[23]. Interface effect and band engineering in Bi2Te3:C and Bi2Te3:Ni-Cu with enhanced thermopower for self-powered wearable thermoelectric generator
Journal of Alloys and Compounds 868/ 158905-1-11 (2021年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] V. Shalini , S. Harish , J. Archana , H. Ikeda , M. Navaneethan
[24]. Improvement of Photocatalytic Activity by Zn Doping in Cu2O
Physics of the Solid State 62/10 1796-1802 (2020年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] C. P. Goyal, D. Goyal, V. Ganesh, N. S. Ramgir, M. Navaneethan, Y. Hayakawa, C. Muthamizhchelvan, H. Ikeda and S. Ponnusamy
[25]. Improvement of Photocatalytic Activity by Zn Doping in Cu2O
Physics of the Solid State 62/10 1796-1802 (2020年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] C. P. Goyal, D. Goyal, V. Ganesh, N. S. Ramgir, M. Navaneethan, Y. Hayakawa, C. Muthamizhchelvan, H. Ikeda and S. Ponnusamy
[26]. High performance electrocatalytic and cationic substitution in Cu2ZnSnS4 as a low-cost counter electrode for Pt-free Dye-Sensitized Solar Cells
journal of Materials Science 56/ 4135-4150 (2020年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] Navaneenthan M, P.Baskaran, K.D.Nisha, S.Harish, S.Prabakaran, J.Archana, S.Ponnusamy, C.Muthamizhchelvan, H.Ikeda
[27]. Study of CuSbSe2 thin films grown by pulsed laser deposition from bulk source material
Materials Science in Semiconductor Processing 121/ 105420-1-7 (2020年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] D. Goyal, C.P. Goyal, H. Ikeda, G. Chandrashekaran, P. Malar
[28]. Growth of large-scale MoS2 nanosheets on double layered ZnCo2O4 for real-time in-situ H2S monitoring in live cells
Journal of Materials Chemistry B 8/ 7453-7465 (2020年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] Mani, Veerappan; Selvaraj, Shanthi; Jeromiyas, Nithya; Huang, Sheng-Tung; Ikeda, Hiroya; Hayakawa, Yasuhiro; Ponnusamy, Suru; Salama, Khaled Nabil; C, Muthamizhchelvan
[29]. Study of CuSbSe2 thin films grown by pulsed laser deposition from bulk source material
Materials Science in Semiconductor Processing 121/ 105420-1-7 (2020年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] Deepak Goyal ,C.P. Goyal ,Hiroya Ikeda ,Gopalakrishnan Chandrashekaran ,Piraviperumal Malar
[30]. Effect of phonon-boundary scattering on phonon-drag factor in Seebeck coefficient of Si wire
AIP Advances 10/ 075015-1-5 (2020年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] K. Fauziah, Y. Suzuki, T. Nogita, Y. Kamakura, T. Watanabe, F. Salleh, H. Ikeda
[31]. Effect of Zn doping in CuO octahedral crystals towards structural, optical and gas sensing properties
Crystals 10/ 188-1-188-16 (2020年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] C.P. Goyal, S. Ponnusamy [DOI]
[32]. Role of growth temperature in photovoltaic absorber CuSbSe2 deposition through e-beam evaporation
Materials Science in Semiconductor Processing 108/ 104874-1-104874-8 (2019年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] D. Goyal, C.P. Goyal, P. Malar [DOI]
[33]. Influence of TiO2 layer's nanostructure on its thermoelectric power factor
Applied Surface Science 497/ 143736-1-143736-5 (2019年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] Faiz Salleh [DOI]
[34]. Synergistic effect and enhanced electrical properties of TiO2/SnO2/ZnO nanostructures as electron extraction layer for solar cell application
Applied Surface Science 498/ 143702-1-143702-12 (2019年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] S. Prabakaran, K.D. Nisha, S. Harish, J. Archana, M. Navaneethan, S. Ponnusamy, C. Muthamizhchelvan, Y. Hayakawa [DOI]
[35]. A novel investigation on ZnO nanostructures on carbon fabric for harvesting thermopower on textile
Applied Surface Science 496/ 143658-1-143658-7 (2019年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] Pandiyarasan Veluswamy [DOI]
[36]. Fabrication of ultrathin poly-crystalline SiGe-on-insulator layer for thermoelectric applications
Journal of Physics Communications 3/7 075007-1-075007-9 (2019年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] C.P. Goyal [DOI]
[37]. Design and fabrication of PANI/GO system for enhanced room-temperature thermoelectric application
Applied Surface Science 493/ 1350-1360 (2019年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] V. Shalini [DOI]
[38]. Effect of phonon-drag contributed Seebeck coefficient on Si-wire thermopile voltage output
IEICE Transactions on Electronics E102-C/6 475-478 (2019年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]K. Fauziah, H. Ikeda [共著者]Y. Suzuki, Y. Narita, Y. Kamakura, T. Watanabe, F. Salleh [DOI]
[39]. Synergistic interaction of 2D layered MoS2/ZnS nanocomposite for highly efficient photocatalytic activity under visible light irradiation
Applied Surface Science 488/ 36-45 (2019年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] S. Harish, Prachi, J. Archana, M. Navaneethan, M. Shimomura, Y. Hayakawa [DOI]
[40]. Dielectric and Magnetic Properties of Nanoporous Nickel Doped Zinc Oxide for Spintronic Applications
Journal of Magnetism and Magnetic Materials 485/ 27-35 (2019年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] K. Jeyasubramanian, R.V. William, P. Thiruramanathan, G S Hikku, M. Vimal Kumar, B. Ashima, P. Veluswamy [DOI]
[41]. Real-time quantification of hydrogen peroxide production in living cells using NiCo2S4@CoS2 heterostructure
Sensors and Actuators B: Chemical 287/ 124-130 (2019年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] V. Mani, S. Shanthi, T.-K. Peng, H.-Y. Lin, Y. Hayakawa, S. Ponnusamy, C. Muthamizhchelvan, S.-T. Huang [DOI]
[42]. ZnCo2O4 Nanoflowers Grown on Co3O4 Nanowire-Decorated Cu Foams for in Situ Profiling of H2O2 in Live Cells and Biological Media
ACS Appl. Nano Mater / 5049-5060 (2019年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] Veerappan Mani*, Shanthi Selvaraj, Tie-Kun Peng, Hsin-Yi Lin, Nithiya Jeromiyas, Hiroya Ikeda, Yasuhiro Hayakawa, Suru Ponnusamy, Chellamuthu Muthamizhchelvan*, and Sheng-Tung Huang
[43]. Hierarchical MoS2 Nanosheets - FeCo2O4 Nanowires on Flexible Carbon Cloth Substrate for High-Performance Flexible Supercapacitors
Int. J. Electrochem. Sci. 14/ 5535-5546 (2019年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] "Selvaraj Shanthi , Hiroya Ikeda , Indrajit M. Patil , Bhalchandra kakade , Yasuhiro Hayakawa , Suru Ponnusamy , Chellamuthu Muthamizhchelvan"
[44]. Fabrication of hierarchical NiCo2S4@CoS2 nanostructures on highly conductive flexible carbon cloth substrate as a hybrid electrode material for supercapacitors with enhanced electrochemical performance
Electrochemica Acta 293/ 328-337 (2019年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]M. Govindasamy, C. Muthamizhchelvan [共著者]S. Shanthi, E. Elaiyappillai, S.-F. Wang, P.M. Johnson, H. Ikeda, Y. Hayakawa, S. Ponnusamy [DOI]
[45]. Electrodeposited MnO2- carbon cloth supercapacitor electrode material for high power applications
Journal of Advances in Physics 14/3 5858-5864 (2018年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]S. Shanthi, C. Muthamizhchelvan [共著者] Y. Hayakawa, S. Ponnusamy, H. Ikeda [DOI]
[46]. Formation of hierarchical 2D-MoS2 nanostructures over carbon fabric as binder free electrode material for supercapacitor applications
Journal of Advances in Physics 15/ 5943-5949 (2018年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]S. Shanthi, C. Muthamizhchelvan [共著者] Y. Hayakawa, S. Ponnusamy, H. Ikeda [DOI]
[47]. Impact of MgO thickness on the perpendicular magnetic anisotropy of Mo/Co2FeAl/MgO/Mo multilayers with improved annealing stability
Materials Research Bulletin 107/ 118-124 (2018年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]L. Saravanan, H. A. Therese [共著者]M. Manivel Raja, D. Prabhu, V. Pandiyarasan, H. Ikeda [DOI]
[48]. Modeling, Simulation, Fabrication, and Characterization of a 10-μW/cm² Class Si-Nanowire Thermoelectric Generator for IoT Applications
IEEE Transactions on Electron Devices 65/ 5180-5188 (2018年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]M. Tomita, T. Watanabe [共著者]S. Oba, Y. Himeda, R. Yamato, K. Shima, T. Kumada, M. Xu, H. Takezawa, K. Mesaki, K. Tsuda, S. Hashimoto, T. Zhan, H. Zhang, Y. Kamakura, Y. Suzuki, H. Inokawa, H. Ikeda, T. Matsukawa, T. Matsuki [DOI]
[49]. Ultra-fast photocayalytic and dye-sensitized solar cell performances of mesoporous TiO2 nanospheres
Applied Surface Science 449/ 729-735 (2018年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]J. Archana,Y. Hayakawa [共著者]S. Harish,S. Kavirajan,M. Navaneethan,S. Ponnusamy,M. Shimomura,C. Muthamizhchelvan,H. Ikeda [DOI]
[50]. Tailoring the functional properties of polyurethane foam with dispersions of carbon nanofiber for power generator applications
Applied Surface Science 449/ 507-513 (2018年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Suhasini Sathiyamoorthy,Hiroya Ikeda [共著者]Greeshma Girijakumrai,Prashanth Kannan,Kathirvel Venugopal,Saranya Thiruvottriyur Shanmugam,Pandiyarasan Veluswamy,Karolien De Wael [DOI]
[51]. Enhanced Photocatalytic Degradation and Hydrogen Production activity of In Situ grown TiO2 coupled NiTiO3 Nanocomposites
Applied Surface Science 449/ 790-798 (2018年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]Sandeep Kumar Lakhera,Bernaurdshaw Neppolian [共著者]Hafeez Yusuf Hafeez,Pandiyarasan Veluswamy,V. Ganesh,Anish Khan,Hiroya Ikeda [DOI]
[52]. Influence of Au on Ge crystallization and its thermoelectric properties in a Au-induced Ge crystallization technique
Journal of Advances in Physics 14/2 5460-5466 (2018年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]S. Shanthi, H. Ikeda [共著者]K. Faizan, S. Nishino, M. Omprakash, T. Takeuchi, Y. Shimura, Y. Hayakawa, C. Muthamizhchelvan [DOI]
[53]. Sono-synthesis approach of reduced graphene oxide for ammonia vapour detection at room temperature
Ultrasonics Sonochemistry 48 555-566 (2018年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Pandiyarasan Veluswamy, Ikeda Hiroya [共著者]Suhasini Sathiyamoorthy, P. Santhoshkumar, Gopaku Karunakaran, Chang Woo Lee, Denis Kuznetsov, Jeyasubramanian Kadarkaraithangam [DOI]
[54]. Alkyd resin based hydrophilic self-cleaning surface with self-refreshing behaviour as single step durable coating
Journal of Colloid & Interface Science 531 628-641 (2018年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]G.S. Hikku, H. Ikeda [共著者]K. Jeyasubramanian, J. Jacobjose, P. Thiruramanathan, P. Veluswamy [DOI]
[55]. Thermoelectric characteristics of nanocrystalline ZnO grown on fabrics for wearable power generator
IOP Conference Series: Journal of Physics 1052 012017-1-4 (2018年)
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikeda [共著者]F. Khan, P. Veluswamy, S. Sakamoto, M. Navaneethan, M. Shimomura, K. Murakami, Y. Hayakawa [DOI]
[56]. Low thermal conductivity of bulk amorphous Si1-xGex containing nano-sized crystalline particles synthesized by ball milling process
Journal of Electronic Materials 47/6 3260-3266 (2018年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]Omprakash Muthusamy,Yasuhiro Hayakawa [共著者]Shunsuke Nishino,Swapril Ghodke,Manabu Inukai,Rober Sobota,Masahiro Adachi,Makoto Kiyama,Yoshiyuki Yamamoto,Tsunehiro Takeuchi,Harish Santhanakrishman,Hiroya Ikeda [DOI]
[57]. Seebeck Coefficient of Flexible Carbon Fabric for Wearable Thermoelectric Device
IEICE Transactions on Electronics E101-C/5 343-346 (2018年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Faizan Khan,Hiroya Ikeda [共著者]Veluswamy Pandiyarasan,Shota Sakamoto,Mani Navaneethan,Masaru Shimomura,Kenji Murakami,Yasuhiro Hayakawa [DOI]
[58]. Perpendicular magnetic anisotropy in Mo/Co2FeAl0.5Si0.5/MgO/Mo multilayers with optimal Mo buffer layer thickness
Journal of Magnetism and Magnetic Materials 454 267-273 (2018年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]L. Saravanan,H. A. Therese [共著者]M. Manivel Raja,D. Prabhu,V. Pandiyarasan,H. Ikeda [DOI]
[59]. Simulation of Temperature Distribution under Periodic Heating for Analysis of Thermal Diffusivity in Nanometer-Scale Thermoelectric Materials
IEICE Transactions on Electronics E101-C/5 347-350 (2018年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]N. Yamashita,H. Ikeda [共著者]Y. Ota,F. Salleh,M. Navaneethan,M. Shimomura,K. Murakami [DOI]
[60]. Seebeck coefficient of synthesized Titanium Dioxide thin film on FTO glass substrate
IOP Conference Series: Materials Science and Engineering 342/ 012051-1-6 (2018年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]R. Usop,F. Salleh [共著者]N. K. A. Hamed,M. M. I. Megat Hasnan,H. Ikeda,M. F. M. Sabri,M. K. Ahmad,S. M. Said [DOI]
[61]. Effect of pH and annealing temperature on the properties of tin oxide nanoparticles prepared by sol-gel method
Journal of Materials Science: Materials in Electronics 29/1 658-666 (2018年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Mohana Priya Subramaniam,H. Ikeda [共著者]Geetha Arunachalam,Ramamurthi Kandasamy,Pandiyarasan Veluswamy [DOI]
[62]. Surface modification of ZnO nanowires with CuO: a tool to realize highly sensitive H2S sensor
Physics of the Solid State 1/ PSS-103 (2017年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] C. P. Goyal, D. Goyal, N. S. Ramgir, M. Navaneethan, Y. Hayakawa, C. Muthamizhchelvan, H. Ikeda and S. Ponnusamy
[63]. Functional properties and enhanced visible light photocatalytic performance of V3O4 nanostructures decorated ZnO nanorods
Applied Surface Science 418/ 171-178 (2017年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]S. Harish, Y.Hayakawa [共著者]M. Sabarinathan, J. Archana, M. Navaneethan, S. Ponnusamy, C. Muthamizhchelvan, H. Ikeda [DOI]
[64]. Controlled structural and compositional characteristic of visible light active ZnO/CuO photocatalyst for the degradation of organic pollutant
Applied Surface Science 418/ 103-112 (2017年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]S. Harish,Y. Hayakawa [共著者]J. Archana,M. Sabarinathan,M. Navaneethan,K.D. Nisha,S. Ponnusamy,C. Muthamizhchelvan,H. Ikeda,D.K. Aswal [DOI]
[65]. Synthesis of ZnO/SrO nanocomposites for enhanced photocatalytic activity under visible light irradiation
Applied Surface Science 418/ 147-155 (2017年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]S. Harish,Y. Hayakawa [共著者]M. Sabarinathan,J. Archana,M. Navaneethan,K.D. Nisha,S. Ponnusamy,V. Gupta,C. Muthamizhchelvan,D.K. Aswal,H. Ikeda [DOI]
[66]. Hydrothermal growth of highly monodispersed TiO2 nanoparticles: Functional properties and dye-sensitized solar cell performance
Applied Surface Science 418/ 186-193 (2017年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]M. Navaneethan,Y. Hayakawa [共著者]S. Nithiananth,R. Abinaya,S. Harish,J. Archana,L. Sudha,S. Ponnusamy,C. Muthamizhchelvan,H. Ikeda [DOI]
[67]. Enhancement of power factor by energy filtering effect in hierarchical BiSbTe3 nanostructures for thermoelectric applications
Applied Surface Science 418/ 246-251 (2017年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]M. Sabarinathan,Y. Hayakawa [共著者]M. Omprakash,S. Harish,M. Navaneethan,J. Archana,S. Ponnusamy,H. Ikeda,T. Takeuchi,C. Muthamizhchelvan [DOI]
[68]. 0.8 V nanogenerator for mechanical energy harvesting using bismuth titanate-PDMS nanocomposite
Applied Surface Science 418/ 362-368 (2017年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]N. Abinnas,Y. Hayakawa [共著者]P. Baskaran,S. Harish,R. Sankar Ganesh,M. Navaneethan,K.D. Nisha,S. Ponnusamy,C. Muthamizhchelvan,H. Ikeda [DOI]
[69]. Fabrication of hierarchical ZnO nanostructures on cotton fabric for wearable device applications
Applied Surface Science 418/ 352-361 (2017年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]V. Pandiyarasan,H. Ikeda [共著者]S. Suhasini,J. Archana,M. Navaneethan,M. Abhijit,Y. Hayakawa [DOI]
[70]. Influence of organic ligands on the formation and functional properties of CdS nanostructures
Applied Surface Science 418/ 346-351 (2017年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]K.D. Nisha,Y. Hayakawa [共著者]M. Navaneethan,S. Harish,J. Archana,S. Ponnusamy,C. Muthamizhchelvan,D.K. Aswal,M. Shimomura,H. Ikeda [DOI]
[71]. Synergetic effect of CuS@ZnS nanostructures on photocatalytic degradation of organic pollutant under visible light irradiation
RSC Advances 7/ 34366-34375 (2017年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]S. Harish,Y. Hayakawa [共著者]J. Archana,M. Navaneethan,S. Ponnusamy,Ajay Singh,Vinay Gupta,D. K. Aswal,H. Ikeda [DOI]
[72]. Highly efficient visible-light photocatalytic activity of MoS2-TiO2 mixtures hybrid photocatalyst and functional properties
RSC Advances 7/ 24754-24763 (2017年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]M. Sabarinathan,Y. Hayakawa [共著者]S. Harish,J. Archana,M. Navaneethan,H. Ikeda [DOI]
[73]. Zns quantum dots impregnated-mesoporous TiO2 nanospheres for enhanced visible light induced photocatalytic application
RSC Advances 7/ 26446-26457 (2017年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]S. Harish,Y. Hayakawa [共著者]M. Sabarinathan,A.P. Kristy,J. Archana,M. Navaneethan,H. Ikeda [DOI]
[74]. Phonon-drag contribution to Seebeck coefficient in p-type Si, Ge and Si1-xGex
IEICE Transaction on Electronics E100-C/5 482-485 (2017年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]V. Maninuthu,H. Ikeda [共著者]M. Omprakash,M. Arivanandhan,F. Salleh,Y. Hayakawa [DOI]
[75]. Phonon-drag effect on Seebeck coefficient in co-doped Si wire with submicrometer-scaled cross section
IEICE Transaction on Electronics E100-C/5 486-489 (2017年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Y. Suzuki,H. Ikeda [共著者]F. Salleh,Y. Kamakura,M. Shimomura [DOI]
[76]. Excellent floating and load bearing properties of superhydrophobic ZnO/copper stearate nanocoating
Chemical Engineering Journal 320/ 468-477 (2017年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] G.R.T. Suyambulingam, K. Jeyasubramanian, V.K. Mariappan, P. Veluswamy, K. Krishnamoorthy [DOI]
[77]. Fabrication of high quality, thin Ge-on-insulator layers by direct wafer-bonding for nanostructured thermoelectric devices
Semiconductor Science And Technology 32/ 035021-1-10 (2017年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]V. Manimuthu,H. Ikeda [共著者]M. Arivanandhan,F. Salleh,Y. Shimura,Y. Hayakawa [DOI]
[78]. Hydrothermal growth of reduced graphene oxide on cotton fabric for enhanced ultraviolet protection applications
Materials Letters 188/ 123-126 (2017年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]V. Pandiyarasan,H. Ikeda [共著者]J. Archana,A. Pavithra,V. Ashwin,M. Navaneethan,Y. Hayakawa [DOI]
[79]. Incorporation of ZnO and their composite nanostructured material into a cotton fabric platform for wearable device applications
Carbohydrate Polymers 157/ 1801-1808 (2017年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]V. Pandiyarasan,H. Ikeda [共著者]S. Suhasini,F. Khan,A. Ghosh,M. Abhijit,Y. Hayakawa [DOI]
[80]. Morphology dependent thermal conductivity of ZnO nanostructures prepared via a green approach
Journal of Alloys and Compounds 695/ 888-894 (2017年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]V. Pandiyarasan,H. Ikeda [共著者]S. Sathiyamoorthy,K.H. Chowdary,M. Omprakash,K. Krishnamoorthy,T. Takeuchi [DOI]
[81]. Controlled exfoliation of monodispersed MoS2 layered nanostructures by a ligand-assisted hydrothermal approach for the realization of ultrafast degradation of an organic pollutant
RSC Advances 6/ 109495-109505 (2016年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]M. Sabarinathan,Y. Hayakawa [共著者]H. Ikeda,S. Harish,J. Archana,M. Navaneethan [DOI]
[82]. Enhanced visible light induced photocatalytic activity on the degradation of organic pollutants by SnO nanoparticle decorated hierarchical ZnO nanostructures
RSC Advances 6/ 89721-89731 (2016年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]S. Harish,Y. Hayakawa [共著者]J. Archana,M. Navaneethan,A. Silambarasan,K.D. Nisha,S. Ponnusamy,C. Muthamizhchelvan,H. Ikeda,D.K. Aswal [DOI]
[83]. Incorporation of Polyaniline on Graphene - Related Materials/Cotton-Fabric by Interfacial Polymerization Pathway for Wearable Device
Asian Journal of Advanved Basic Sciences 4/2 94-97 (2016年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] P. Veluswamy,H. Ikeda
[84]. Highly efficient dye-sensitized solar cell performance from template derived high surface area mesoporous TiO2 nanospheres
RSC Advances 6/ 68092-68099 (2016年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]J. Archana,Y. Hayakawa [共著者]S. Harish,M. Sabarinathan,M. Navaneethan,S. Ponnusamy,C. Muthamizhchelvan,M. Shimomura,H. Ikeda,D.K. Aswal [DOI]
[85]. Reduction of the surface roughness of Ge-on-insulator layers up to sub-nanometer range by chemical mechanical polishing
Journal of Advances in Physics 11/10 4088-4092 (2016年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]V. Maninuthu,H. Ikeda [共著者]Y. Hayakawa,M. Arivanandhan [DOI]
[86]. Vertical gradient solution growth of N-type Si0.73Ge0.27 bulk crystals with homogeneous composition and its thermoelectric properties
Journal of Crystal Growth 442/ 102-109 (2016年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]M. Omprakash,Y. Hayakawa [共著者]M. Arivanandhan, M. Sabarinathan, T. Koyama, Y. Momose, H. Ikeda, H. Tatsuok, D. K. Aswal, S. Bhattacharya, Y. Inatomi [DOI]
[87]. Construction of a novel method of measuring thermal conductivity for nanostructures
MAKARA Journal of Technology 19/1 11-14 (2015年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikeda,K. Murakami [共著者]S. Yoshida,Y. Suzuki,V. Maninuthu,F. Salleh,F. Kuwahara,M. Shimomura [DOI]
[88]. Phonon-drag contribution to Seebeck coefficient of Ge-on-insulator substrate fabricated by wafer bonding process
MAKARA Journal of Technology 19/1 21-24 (2015年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]V. Maninuthu,H. Ikeda [共著者]S. Yoshida,Y. Suzuki,F. Salleh,M. Arivanandhan,Y. Kamakura,Y. Hayakawa [DOI]
[89]. Seebeck coefficient of SOI layer induced by phonon transport
MAKARA Journal of Technology 19/1 1-4 (2015年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]F. Salleh,H. Ikeda [共著者]T. Oda,Y. Suzuki,Y. Kamakura [DOI]
[90]. Seebeck coefficient of Ge-on-insulator layers fabricated by direct wafer bonding process
Advanced Materials Research 1117/ 94-97 (2015年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]V. Manimuthu,H. Ikeda [共著者]M. Omprakash,Y. Suzuki,F. Salleh,M. Arivanandhan,Y. Kamakura,Y. Hayakawa [DOI]
[91]. High power factor of Ga-doped compositionally homogeneous Si0.68Ge0.32 bulk crystal grown by the vertical temperature gradient freezing method
Jouranl of Crystal Growth & Design 15/ 1380-1388 (2015年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]M. Omprakash,Y. Hayakawa [共著者]M. Arivanandhan,T. Koyama,Y. Momose,H. Ikeda,H. Tatsuoka,D.K. Aswal,S. Bhattacharya,Y. Okano,T. Ozawa,Y. Inatomi, S.M. Babu [DOI]
[92]. Study on phonon drag effect and phonon transport in thin Si-on-insulator layers
Advanced Materials Research 1117/ 86-89 (2015年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikeda,F. Salleh [共著者]T. Oda,Y. Suzuki,Y. Kamakura, [DOI]
[93]. Phonon drag effect on Seebeck coefficient of ultrathin P-doped Si-on-insulator layers
Applied Physics Letters 105/10 102104-1-4 (2014年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]F. Salleh,H. Ikeda [共著者]T. Ota,Y. Suzuki,Y. Kamakura [DOI]
[94]. Analysis of Dissolution and Growth Process of SiGe Alloy Semiconductor Based on Penetrated X-ray Intensities
Journal of Alloys and Compounds 590/ 96-101 (2014年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]M. Omprakash,Y. Hayakawa [共著者]M. Arivanandhan,R.A. Kumar,H. Morii,T. Aoki,T. Koyama,Y. Momose,H. Ikeda,H. Tatsuoka,Y. Okano,T. Ozawa,S.M. Babu,Y. Inatomi, [DOI]
[95]. Modulation of Seebeck coefficient for silicon-on-insulator layer induced by bias-injected carriers
Applied Physics Letters 103/6 062107-1-3 (2013年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]F. Salleh,H. Ikeda [共著者]Y. Suzuki,K. Miwa [DOI]
[96]. KFM evaluation of Seebeck coefficient in thin SOI layers
Proceedings of the 13th International Conference on QiR 1411-1284/ 916-919 (2013年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikeda [共著者]Y. Suzuki,K. Miwa,F. Salleh [DOI]
[97]. Variation of Seebeck coefficient in ultrathin Si layer by tuning its Fermi energy
Proceedings of the 13th International Conference on QiR 1411-1284/ 931-934 (2013年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]F. Salleh,H. Ikeda [共著者]K. Miwa,Y. Suzuki [DOI]
[98]. Development of Seebeck-coefficient measurement systems using Kelvin-probe force microscopy
MAKARA Journal of Technology 17/1 17-20 (2013年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikeda,K. Miwa [共著者]F. Salleh [DOI]
[99]. Improvement in measurement system of Seebeck coefficient by KFM
Journal of Advanced Research in Physics 3/2 021205-1-4 (2012年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]K. Miwa,H. Ikeda [共著者]F. Salleh
[100]. Variation of SOI Seebeck coefficient by applying an external bias
Journal of Advanced Research in Physics 3/2 021207-1-4 (2012年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]F. Salleh,H. Ikeda [共著者]K. Miwa
[101]. Construction of Seebeck-coefficient measurement by Kelvin-probe force microscopy
AIP Conference Proceedings of the 9th European Conference on Thermoelectrics 1449/ 377-380 (2012年) [査読] 無 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikeda [共著者]F. Sallehi,K. Miwa [DOI]
[102]. Theoretical study on the stability of the single-electron-pump refrigerator with respect to thermal and dimensional fluctuations
IEICE Transaction on Electronics E95-C/5 924-927 (2012年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] H. Ikeda,F. Salleh [DOI]
[103]. Growth of homogeneous polycrystalline Si1-xGex and Mg2Si1-xGex for thermoelectric application
Thin Solid Films 519/ 8532-8537 (2011年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]Y. Hayakawa,T. Tatsuoka [共著者]M. Arivanandhan,Y. Saito,T. Koyama,Y. Momose,H. Ikeda,A. Tanaka,C. Wen,Y. Kubota,T. Nakamura,S. Bhattacharya,D. K. Aswal,S. M. Babu,Y. Inatomi
[104]. A theoretical study of a novel single-electron refrigerator fabricated from semiconductor materials
Japanese Journal Of Applied Physics 50/6 06GF20-1-4 (2011年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] H. Ikeda,F. Salleh
[105]. Growth of Si1-xGex bulk crystals with highly homogeneous composition for thermoelectric applications
JOURNAL OF CRYSTAL GROWTH 318/ 324-327 (2011年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]M. Arivanandhan,Y. Hayakawa [共著者]Y. Saito,T. Koyama,Y. Momose,H. Ikeda,A. Tanaka,T. Tatsuoka,D. K. Aswal,Y. Inatomi
[106]. A novel refrigerator device using single-electron pump fabricated from semiconductor materials
Technical Report of IEICE, 2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 182-185 (2011年) [査読] 無 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] H. Ikeda,F. Salleh
[107]. Seebeck coefficient of heavily P-doped Si calculated from an alteration in electronic density of states
JOURNAL OF ELECTRONIC MATERIALS 40/5 903-906 (2011年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] H. Ikeda,F. Salleh
[108]. A novel refrigerator device using single-electron pump applicable to SOI wafers
Advanced Materials Research 222/ 66-69 (2011年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] F. Salleh,H. Ikeda
[109]. Influence of impurity band on Seebeck coefficient in heavily-doped Si
Advanced Materials Research 222/ 197-200 (2011年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] H. Ikeda,F. Salleh
[110]. Influence of heavy doping on Seebeck coefficient in silicon-on-insulator
Applied Physics Letters 96/ 012106-1-3 (2010年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] H. Ikeda,F. Salleh
[111]. Seebeck coefficient of ultrathin silicon-on-insulator layers
Appl. Phys. Express 2/ 071203-1-3 (2009年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]F. Salleh,H. Ikeda [共著者]K. Asai,A. Ishida
[112]. Seebeck coefficient measurement by Kelvin-probe force microscopy
J. Autom. Mobile Rob. Intell. Syst. 3/ 49-51 (2009年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikeda,K. Asai [共著者]F. Salleh
[113]. Impurity-concentration dependence of Seebeck coefficient in silicon-on-insulator layers
J. Autom. Mobile Rob. Intell. Syst. 3/ 134-136 (2009年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikeda,F. Salleh [共著者]K. Asai,A. Ishida
[114]. Si multidot FETs for single-electron transfer and single-photon detection
ACTA PHYSICA POLONICA A 113/ 811-814 (2008年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikeda,M. Tabe,R. Nuryadi,D. Moraru,K. Yokoi [共著者]Z.A. Burhanudin
[115]. Manipulation of single-electrons in Si nanodevices -Interplay with photons and ions
Re- cent Advances in Mechatronics-The Proceedings of Mechatronics 2007 / 500-504 (2007年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]M. Tabe [共著者]R. Nuryadi,Z. A. Burhanudin,D. Moraru,K. Yokoi,H. Ikeda
[116]. Fowler-Nordheim current oscillations in Si(111)/SiO2/twisted-Si(111) tunneling structures
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 45/ L316-L318 (2006年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]D. Moraru,M. Tabe,H. Ikeda,H. Kato,S. Horiguchi [共著者]Y. Ishikawa
[117]. Numerical study of turnstile operation in random-multidot-channel field-effect transistor
JOURNAL OF APPLIED PHYSICS 99/ 073705-1-6 (2006年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] H. Ikeda,M. Tabe
[118]. Potential-well-roughness-induced transition from resonant tunneling to single-electron tunneling in Si/SiO2 double-barrier structure
Applied Physics Letters 86/ 013508-1-3 (2005年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] Y. Ishikawa,H. Ikeda,M. Tabe
[119]. Current fluctuation in single-hole transport through a two-dimensional Si multidot
Applied Physics Letters 86/ 133106-1-3 (2005年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] R. Nuryadi,M. Tabe,Y. Ishikawa,H. Ikeda
[120]. Pulsed laser deposition and analysis for structural and electrical properties of HfO2-TiO2 composite films
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 43/ 1571-1576 (2004年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikeda,K. Honda,A. Sakai,Y. Yasuda,S. Zaima [共著者]M. Sakashita
[121]. Photoinduced effects on single-charge tunneling in a Si two-dimensional multidot field-effect transistor
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 43/ L759-L761 (2004年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] H. Ikeda,R. Nuryadi,Y. Ishikawa,M. Tabe
[122]. Reactive deposition epitaxy of CoSi2 films on clean and oxygen-adsorbed Si(001) surfaces
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 42/ 7482-7488 (2003年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] H. Ikeda,Y. Hayashi,A. Sakai,S. Zaima,Y. Yasuda
[123]. Effect of Al interlayers on two-step epitaxial growth of CoSi2 on Si(100)
Applied Surface Science 216/ 174-180 (2003年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]O. Nakatsuka,Y. Yasuda,A. Sakai,S. Zaima,H. Ikeda [共著者]H. Onoda,E. Okada
[124]. Resonant tunneling characteristics in SiO2/Si double-barrier structures in a wide range of applied voltage
Applied Physics Letters 83/ 1456-1458 (2003年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] H. Ikeda,M. Iwasaki,Y. Ishikawa,M. Tabe
[125]. Ambipolar Coulomb blockade characteristics in a two-dimensional Si multidot device
IEEE Trans. on Nanotechnol. 2/ 231-235 (2003年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] R. Nuryadi,H. Ikeda,Y. Ishikawa,M. Tabe
[126]. Pattern-induced alignment of silicon islands on buried oxide layer of silicon-on-insulator structure
Applied Physics Letters 83/ 3162-3164 (2003年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] Y. Ishikawa,Y. Imai,H. Ikeda,M. Tabe
[127]. Surface and interface smoothing of epitaxial CoSi2 films by solid-phase epitaxy using adsorbed oxygen layers and two-step growth on Si(001) surfaces
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 42/ 7039-7044 (2003年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] Y. Hayashi,A. Sakai,S. Zaima,Y. Yasuda,H. Ikeda
[128]. Scanning tunneling microscopy of initial nitridation processes on oxidized Si(100) surface with radical nitrogen
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 42/ 1966-1970 (2003年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]R. Takahashi,Y. Yasuda,A. Sakai,S. Zaima,H. Ikeda [共著者]Y. Kobayashi,M. Sakashita,O. Nakatsuka
[129]. Local leakage current of HfO2 thin films characterized by conducting atomic force microscopy
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 42/ 1949-1953 (2003年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda [共著者]T. Goto,M. Sakashita
[130]. Characterization of defect traps in SiO2 thin films influence of temperature on defects
MICROELECTRONICS JOURNAL 33/ 429-436 (2002年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]J. Y. Rosaye,Y. Watanabe,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda [共著者]N. Kurumado,M. Sakashita,P. Mialhe,J. P. Charles
[131]. Growth processes and electrical characteristics of silicon nitride films formed on Si(100) by radical nitrogen
Japanese Journal Of Applied Physics 41/ 2463-2467 (2002年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda [共著者]D. Matsushita,S. Naito,K. Ohmori
[132]. Structural and electrical characteristics of HfO2 films fabricated by pulsed laser deposition
Japanese Journal Of Applied Physics 41/ 2476-2479 (2002年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda [共著者]S. Goto,K. Honda,M. Sakashita
[133]. Electrical properties and solid-phase reactions in Ni/Si(100) contacts
Japanese Journal Of Applied Physics 41/ 2450-2454 (2002年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]Y. Tsuchiya,A. Sakai,S. Zaima,Y. Yasuda [共著者]H. Ikeda,A. Tobioka,O. Nakatsuka
[134]. Study on solid-phase reactions in Ti/p+-Si1-x-yGexCy/Si(100) contacts
Mat. Sci. Eng. 89/ 373-377 (2002年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]A. Tobioka,A. Sakai,S. Zaima,Y. Yasuda,H. Ikeda [共著者]Y. Tsuchiya
[135]. Atomistic evolution of Si1-x-yGexCy thin films on Si(001) surfaces
Applied Physics Letters 79/ 3242-3244 (2001年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]A. Sakai,Y. Yasuda,S. Zaima,H. Ikeda [共著者]Y. Torige,M. Okada
[136]. Reduction of threading dislocation density in SiGe layers on Si(001) using a two-step strain-relaxation procedure
Applied Physics Letters 79/ 3398-3400 (2001年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]A. Sakai,H. Ikeda,Y. Yasuda,S. Zaima [共著者]K. Sugimoto,T. Yamamoto,M. Okada
[137]. Microscopic Observation of X-ray Irradiation Damage in Ultra-Thin SiO2 Films
Japanese Journal Of Applied Physics 40/ 2823-2826 (2001年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]K. Ohmori,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda [共著者]T. Goto
[138]. Application of a two-step growth to the formation of epitaxial CoSi2 films on Si(001) surfaces: Comparative study using reactive deposition epitaxy
Japanese Journal Of Applied Physics 40/ 269-275 (2001年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Y. Hayashi,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda [共著者]T. Katoh
[139]. Atomic-scale characterization of nitridation processes on Si(100)-2 x 1 surfaces by radical nitrogen
Japanese Journal Of Applied Physics 40/ 2827-2829 (2001年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] D. Matsushita,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda
[140]. Local electric characteristics of ultra-thin SiO2 films formed on Si(100) surfaces
SURFACE SCIENCE 493/ 653-658 (2001年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda [共著者]N. Kurumado,K. Ohmori,M. Sakashita
[141]. Characterization of defect traps in SiO2 thin films
Active and Passive Elec. Comp. 24/ 169-175 (2001年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]J. Y. Rosaye,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda [共著者]P. Mialhe,J. P. Charles,M. Sakashita
[142]. Electrical properties of Ni silicide/silicon contact
Advanced Metallization and Interconnect Systems for ULSI Applications in 2001 / 679-684 (2001年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Y. Tsuchiya,A. Sakai,S. Zaima,Y. Yasuda,H. Ikeda [共著者]O. Nakatsuka
[143]. Selectivity for O adsorption position on dihydride Si(100) surfaces
Applied Surface Science 159-160/ 14-18 (2000年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Kageshima,H. Ikeda,S. Zaima,Y. Yasuda [共著者]K. Shiraishi
[144]. The origin and the creation mechanism of positive charges in silicon oxide films
Proc. of the 4th Int. Symp. on the Physics and Chemistry of SiO2 and the Si-SiO2 interface / 345-352 (2000年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] K. Ohmori,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda
[145]. Control of crystal structure and ferroelectric properties of Pb(ZrxTi1-x)O3 films formed by pulsed laser deposition
Japanese Journal Of Applied Physics 39/ 7035-7039 (2000年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Fujita,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda [共著者]S. Goto,M. Sakashita
[146]. シリコン表面の初期酸化と水素
真空 43 440 (2000年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]安田幸夫 [共著者]池田浩也,財満鎭明
[147]. A study on initial oxidation of Si(100)-2x1 surfaces by coaxial impact collision ion scattering spectroscopy (CAICISS)
Applied Surface Science 159-160/ 35-40 (2000年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]M. Wasekura,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda [共著者]M. Higashi
[148]. Nucleation and growth of Ge on Si(111) in solid phase epitaxy
Thin Solid Films 369/ 116-120 (2000年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]I. Suzumura,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda [共著者]M. Okada,A. Muto,Y. Torige
[149]. Scanning tunneling microscopy/scanning tunneling spectroscopy of initial nitridation process of Si(100)-2x1 surfaces
Thin Solid Films 369/ 293-296 (2000年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] D. Matsushita,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda
[150]. A study on the local bonding structures of oxidized Si(111) surfaces
Thin Solid Films 369/ 277-280 (2000年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]K. Sato,H. Ikeda,S. Zaima,Y. Yasuda [共著者]Y. Nakagawa
[151]. シリコン酸化膜の局所構造緩和過程の研究
真空 42/ 25-30 (1999年) [査読] 有
[責任著者・共著者の別] 共著者
[著者] [責任著者]財満鎭明 [共著者]池田浩也,安田幸夫
[152]. Effects of initial surface states on formation processes of epitaxial CoSi2(100) on Si(100)
Thin Solid Films 343-344/ 562-566 (1999年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Y. Hayashi,H. Ikeda,S. Zaima,Y. Yasuda [共著者]Y. Matsuoka
[153]. Solid-phase epitaxial growth of CoSi2 on clean and oxygen-adsorbed Si(001) surfaces
SURFACE SCIENCE 438/ 116-122 (1999年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Y. Hayashi,H. Ikeda,S. Zaima,Y. Yasuda [共著者]M. Yoshinaga
[154]. Initial oxidation processes of H-terminated Si(100) surfaces analyzed using a random sequential adsorption model
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 38/ 3422-3425 (1999年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikeda,S. Zaima,Y. Yasuda [共著者]Y. Nakagawa,Y. Ishibashi
[155]. Influences of impurities on oxidation processes of Si(100) substrates
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 38/ 2345-2348 (1999年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikeda,S. Zaima,Y. Yasuda [共著者]Y. Nakagawa,K. Sato
[156]. 水素終端シリコン表面の酸化と水素の役割
表面科学 20/ 703-710 (1999年) [査読] 有
[責任著者・共著者の別] 共著者
[著者] [責任著者]財満鎭明 [共著者]池田浩也,安田幸夫
[157]. Influences of deuterium atoms on local bonding structures of SiO2 studied by HREELS
Thin Solid Films 343-344/ 408-411 (1999年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikeda,S. Zaima,Y. Yasuda [共著者]Y. Nakagawa,K. Sato,M. Higashi
[158]. Nucleation and growth of Ge on Si(111) by MBE with additional atomic hydrogen irradiation studied by scanning tunneling microscopy
Journal of Crystal Growth 188/ 119-124 (1998年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]M. Okada,H. Ikeda,S. Zaima,Y. Yasuda [共著者]A. Muto
[159]. Effects of H-termination on Ge film growth on Si(111) surfaces by solid phase epitaxy
Applied Surface Science 130-132/ 321-326 (1998年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]A. Muto,H. Ikeda,S. Zaima,Y. Yasuda [共著者]M. Okada
[160]. Local bonding structures of SiO2 films on H-terminated Si(100) surfaces studied by using high-resolution electron energy loss spectroscopy
Applied Surface Science 130-132/ 192-196 (1998年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Y. Nakagawa,H. Ikeda,S. Zaima,Y. Yasuda [共著者]M. Higashi
[161]. Effects of atomic hydrogen on growth behavior of Si films by Si2H6-source molecular beam epitaxy
Thin Solid Films 317/ 48-51 (1998年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Y. Yasuda,H. Ikeda,S. Zaima [共著者]T. Matsuyama,K. Sato,M. Kondo
[162]. Hydrogen effects on heteroepitaxial growth of Ge films on Si(111) surfaces by solid phase epitaxy
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 37/ 6970-6973 (1998年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]M. Okada,H. Ikeda,S. Zaima,Y. Yasuda [共著者]A. Muto,I. Suzumura
[163]. A new growth method of epitaxial cobalt disilicide on Si(100)
Advanced Metallization and Interconnect Systems for ULSI Applications in 1997 / 663-668 (1998年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Y. Hayashi,H. Ikeda,S. Zaima,Y. Yasuda [共著者]Y. Matsuoka,T. Katoh,H. Ikegami
[164]. Electrical properties and interfacial reactions at Co/Si(100) contacts
Advanced Metallization and Interconnect Systems for ULSI Applications in 1997 / 669-675 (1998年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Iwano,S. Zaima,Y. Yasuda,H. Ikeda [共著者]Y. Isobe
[165]. Initial oxidation of Si(100)-(2x1)H monohydride surfaces studied by scanning tunneling microscopy/scanning tunneling spectroscopy
Applied Surface Science 117/118/ 114-118 (1997年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]K. Ohmori,H. Ikeda,S. Zaima,Y. Yasuda [共著者]H. Iwano
[166]. Hydrogen effects on Si1-xGex/Si heteroepitaxial growth by Si2H6- and GeH4-source molecular beam epitaxy
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 36/ 7665-7668 (1997年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]M. Okada,H. Ikeda,S. Zaima,Y. Yasuda [共著者]M. Kondo
[167]. Interfacial reactions and electrical characteristics in Ti/SiGe/Si(100) contact systems
Applied Surface Science 117/118/ 317-320 (1997年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]J. Kojima,H. Ikeda,S. Zaima,Y. Yasuda [共著者]H. Shinoda,H. Iwano
[168]. Effects of H-termination on initial oxidation process
Applied Surface Science 113/114/ 579-584 (1997年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] Y. Yasuda,H. Ikeda,S. Zaima
[169]. The influence of additional atomic hydrogen on the monolayer growth of Ge on Si(100) studied by STM
Applied Surface Science 113/114/ 349-353 (1997年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]M. Okada,H. Ikeda,S. Zaima,Y. Yasuda [共著者]T. Shimizu
[170]. Thermal stability of ultra-thin CoSi2 films on Si(100)-2x1 surfaces
Applied Surface Science 117/118/ 275-279 (1997年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] H. Ikegami,H. Ikeda,S. Zaima,Y. Yasuda
[171]. Initial oxidation of H-terminated Si(111) surfaces studied by HREELS
Applied Surface Science 117/118/ 109-113 (1997年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikeda,S. Zaima,Y. Yasuda [共著者]Y. Nakagawa,M. Toshima,S. Furuta
[172]. 水素終端シリコン表面の初期酸化過程と局所構造
表面科学 17/ 141-147 (1996年) [査読] 有
[責任著者・共著者の別] 共著者
[著者] [責任著者]池田浩也 [共著者]財満鎭明,安田幸夫
[173]. Initial oxidation processes of H-terminated Si(100) surfaces studied by high-resolution electron energy loss spectroscopy
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 35/ 1069-1072 (1996年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikeda,S. Zaima,Y. Yasuda [共著者]K. Hotta,S. Furuta
[174]. Influences of hydrogen on initial oxidation processes of H-terminated Si(100) surfaces
Applied Surface Science 104/105/ 354-358 (1996年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikeda,S. Zaima,Y. Yasuda [共著者]K. Hotta,,S. Furuta
[175]. Initial oxidation of Si(311) surfaces studied by high-resolution electron energy loss spectroscopy
Applied Surface Science 100/101/ 431-435 (1996年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikeda,S. Zaima,Y. Yasuda [共著者]T. Yamada,K. Hotta
[176]. Oxide formation on Si(100)-2x1 surfaces studied by scanning tunneling microscopy / scanning tunneling spectroscopy
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 35/ 1593-1597 (1996年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikegami,H. Ikeda,S. Zaima,Y. Yasuda [共著者]K. Ohmori,H. Iwano
[177]. Electrical properties of metal/Si1-xGex/Si(100) heterojunctions
Applied Surface Science 100/101/ 526-529 (1996年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Shinoda,H. Ikeda,S. Zaima,Y. Yasuda [共著者]M. Kosaka,J. Kojima
[178]. Orientation dependence of the initial oxidation of H-terminated Si surfaces studied by high-resolution electron energy loss spectroscopy
Proc. of the 3rd Int. Symp. on the Physics and Chemistry of SiO2 and the Si-SiO2 interface 96-1/ 72-80 (1996年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikeda,S. Zaima,Y. Yasuda [共著者]K. Hotta,S. Furuta
[179]. Study on CoSi2 formation on Si(100)-2x1 surfaces by scanning tunneling microscopy and scanning tunneling spectroscopy
Advanced Metallization and Interconnect Systems for ULSI Applications in 1995 / 511-516 (1996年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] H. Ikegami,H. Ikeda,S. Zaima,Y. Yasuda
[180]. Surfactant effect of H atoms on the suppression of Ge segregation in Si overgrowth on Ge(n ML)/Si(100) substrates by gas source molecular beam epitaxy
Journal of Crystal Growth 150/ 944-949 (1995年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]S. Zaima,H. Ikeda,Y. Yasuda [共著者]K. Sato,T. Kitani,T. Matsuyama
[181]. Studies on reaction processes of hydrogen and oxygen atoms with H2O-adsorbed Si(100) surfaces by high-resolution electron energy loss spectroscopy
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 34/ 2191-2195 (1995年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikeda,S. Zaima,Y. Yasuda [共著者]K. Hotta,T. Yamada
[182]. Oxidation of H-terminated Si(100) surfaces studied by high-resolution electron energy loss spectroscopy
Journal of Applied Physics 77/ 5125-5129 (1995年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]H. Ikeda,S. Zaima,Y. Yasuda [共著者]K. Hotta,T. Yamada,H. Iwano
[183]. Improvements of electrical characteristics of Hf/p-Si(100) interfaces by H-termination
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 34/ 741-745 (1995年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]S. Zaima,H. Ikeda,Y. Yasuda [共著者]J. Kojima,M. Hayashi,H. Iwano [DOI]
[184]. Surface modification of ZnO nanowires with CuO: a tool to realize highly sensitive H2S sensor
Physics of the Solid State 63/ 460-467 [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] C. P. Goyal, D. Goyal, N. S. Ramgir, M. Navaneethan, Y. Hayakawa, C. Muthamizhchelvan, H. Ikeda and S. Ponnusamy