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Researcher DataBase - Personal Information : SHIMURA Yosuke

Academic conference/research presentations

【Academic conference/research presentations】
[1]. Formation and Characterization of Polycrystalline SiGeSn
6th International Conference on Nanoscience and Nanotechnology (ICONN) (2021/2/2) invited
[Presenter]Yosuke Shimura and Hirokazu Tatsuoka
[2]. Synthesis of beta-FeSi2, MnSi1.7 and Mg2Si nano/micro-structures by Reactive Deposition Process
6th International Conference on Nanoscience and Nanotechnology (ICONN) (2021/2/2) invited
[Presenter]Hirokazu Tatsuoka and Yosuke Shimura
[3]. Sn-containing Group-IV alloys for thermoelectric applications
The 22nd Takayanagi Kenjiro Memorial Symposium (2020/11/25) other
[Presenter]Yosuke Shimura
[4]. Fine Structural and Photoluminescence Properties of Mg2Si Nanosheet Bundles Rooted on Si Substrate
2020 International Conference on Solid State Devices and Materials (SSDM) (2020/9/30) other
[Presenter]Tomoya Koga, Ryo Tamaki, Xiang Meng, Yushin Numazawa, Yosuke Shimura, Nazmul Ahsan, Yoshitaka Okada, Akihiro Ishida, and Hirokazu Tatsuoka
[5]. Inelastic X-ray Scattering Measurement on SiGeSn Polycrystalline Alloy
2020 International Conference on Solid State Devices and Materials (SSDM) (2020/9/28) other
[Presenter]Yosuke Shimura, Kako Iwamoto, Ryo Yokogawa, Motohiro Tomita, Hirokazu Tatsuoka, Hiroshi Uchiyama, and Atsushi Ogura
[6]. IV族半導体混晶への重いSn原子の導入とその熱電特性への効果
第35回シリサイド系半導体研究会 (2020/9/11) other
[Presenter]志村洋介
[7]. SiGeSn多結晶のX線非弾性散乱測定
第81回応用物理学会秋季学術講演会 (2020/9/9) other
[Presenter]志村洋介、岩本佳子、横川凌、富田基裕、立岡浩一、内山裕士、小椋厚
[8]. SiO2上に形成したGe1-xSnx多結晶の熱電特性評価
第81回応用物理学会秋季学術講演会 (2020/9/9) other
[Presenter]内海隼也、立岡浩一、志村洋介
[9]. Photo sensitive nanoparticles for Bio-imaging
Virtual International Transdisciplinary Conference (VITC-2020) (2020/8/26) invited
[Presenter]Yasuhiro Hayakawa, Dheivasigamani Thangaraju, I.K.Mohamed Mathar Sahib, Yosuke Shimura, Wataru Inami, and Yoshimasa Kawata
[10]. Sn-nanodot mediated formation of GeSn and Si(Ge)Sn polycrystalline alloys for thermoelectric applications
5th Asian School-Conference on Physics and Technology of Nanostructured Materials (ASCO-NANOMAT) (2020/7/31) invited
[Presenter]Yosuke Shimura, Junya Utsumi, Masaki Okado, K. Iwamoto, and Hirokazu Tatsuoka
[11]. Si 基板上に作製した Mg2Si ナノシート束の微細構造
日本材料科学会2020年度学術講演大会 (2020/7/16) other
[Presenter]古賀友也、沼澤有信、Xiang Meng、志村洋介、立岡浩一
[12]. CaSi2粉末のMgCl2/Mg雰囲気処理により作製したMg2Siナノシート束の微細構造
日本材料科学会2020年度学術講演大会 (2020/7/16) other
[Presenter]古賀友也、沼澤有信、志村洋介、高橋尚久、立岡浩一
[13]. CaSi2粉末のMnCl2/NH4Cl雰囲気処理により作製したMnSi1.7/Siナノシート束の微細構造
日本材料科学会2020年度学術講演大会 (2020/7/16) other
[Presenter]伊藤聖悟、西川勇大、沼澤有信、志村洋介、高橋尚久、立岡浩一
[14]. CaSi2粉末のMgCl2/Mg雰囲気処理によるMg2Siナノシート束の作製
第67回応用物理学会春季学術講演会 (2020/3/) other
[Presenter]古賀友也、沼澤有信、志村洋介、高橋尚久、立岡浩一
[15]. CaSi2粉末のMnCl2/NH4Cl雰囲気処理によるMnSi1.7/Siナノシート束の作製
第67回応用物理学会春季学術講演会 (2020/3/) other
[Presenter]伊藤聖悟、西川勇大、沼澤有信、志村洋介、高橋尚久、立岡浩一
[16]. Structural and Morphological Properties of Mg-silicate Nanosheet Bundles Synthesized from CaSi2 Crystals
The 4th International Symposium on Biomedical Engineering (ISBE2019) (2019/11/) other
[Presenter]Yushin Numazawa, Ryo Tamaki, Yalei Huang, Vimal Saxena, Nazmul Ahsan, Yoshitaka Okada, Yosuke Shimura, Hidenori Mimura, and Hirokazu Tatsuoka
[17]. Structural and Morphological Properties of CaF2 Nanostructures Synthesized from Ca-Silicide Crystals
The 4th International Symposium on Biomedical Engineering (ISBE2019) (2019/11/) other
[Presenter]Yalei Huang, Ryo Tamaki, Yoshiki Ono, Vimal Saxena, Nazmul Ahsan, Yoshitaka Okada, Yosuke Shimura, Hidenori Mimura, and Hirokazu Tatsuoka
[18]. Synthesis of Ge-based Nanosheet Bundles Using Calcium Germanides as Templates in IP6 Aqueous Solution
2019 International Conference on Solid State Devices and Materials (SSDM) (2019/9/) other
[Presenter]Vimal Saxena, Yosuke Shimura, and Hirokazu Tatsuoka
[19]. CaSi2結晶のMgCl2蒸気下での熱処理によるMg系シリケートナノシートバンドルの作製
第42回結晶成長討論会 (2019/8/) other
[Presenter]沼澤有信、伊藤聖悟、小野祥希、黄 亜磊、立岡浩一、志村洋介
[20]. CaSi2のMnCl2/NH4Cl蒸気下での熱処理により作製したSiナノワイヤ/ナノシート複合体の微細構造
第42回結晶成長討論会 (2019/8/) other
[Presenter]伊藤 聖悟、沼澤 有信、小野 祥希、Yalei Huang、志村 洋介、立岡 浩一、高橋 尚久
[21]. Group-IV Alloys Containing Sn
1st Joint Workshop on Nanostructures (2019/8/) other
[Presenter]Yosuke Shimura, Junya Utsumi, Masaki Okado, Kako Iwamoto, and Hirokazu Tatsuoka
[22]. The impact of crystallinity and Sn composition of Ge1-xSnx on various properties in thermoelectric
1st Joint Workshop on Nanostructures (2019/8/) other
[Presenter]Junya Utsumi, Hirokazu Tatsuoka, and Yosuke Shimura
[23]. Evaluation of Phonon Density of State by Inelastic X-ray Scattering
1st Joint Workshop on Nanostructures (2019/8/) other
[Presenter]Kako Iwamoto, Masaki Okado, Junya Utsumi, Hirokazu Tatsuoka, and Yosuke Shimura
[24]. Structural Properties of Si-based Nanowires, Nanosheets, and Nanowire/Nanosheet Complexes Synthesized by Thermal Treatments under Chlorides Vapors
1st Joint Workshop on Nanostructures (2019/8/) other
[Presenter]Shogo Itoh, Yushin Numazawa, Yoshiki Ono, Yalei Huang, Yosuke Shimura, and Hirokazu Tatsuoka
[25]. Topological Synthesis of Mg-based Silicate Nanosheets from CaSi2 crystals
APAC Silicide 2019 (2019/7/) other
[Presenter]Y. Numazawa, S. Itoh, Y. Ono, Y. Huang, Y. Shimura, and H. Tatsuoka
[26]. Syntesis of Si Nanowire/Nanosheet Complex Structures from CaSi2 crystals by Thermal Treatment under MnCl2/NH4Cl Vapors
APAC Silicide 2019 (2019/7/) other
[Presenter]Shogo Itoh, Yushin Numazawa, Yoshiki Ono, Yalei Huang, Yosuke Shimura, Hirokazu Tatsuoka, and Naohisa Takahashi
[27]. Synthesis of CaF2 Nanostructures from Calcium Silicide Powders in Diluted Aquarius HF Solution
APAC Silicide 2019 (2019/7/) other
[Presenter]Y. Ono, Y. Numazawa, S. Itoh, Y. Huang, Y. Shimura, H. Tatsuoka, and N. Takahashi
[28]. Epitaxial Growth of (Si)GeSn Source/Drain Layers for Advanced Ge Gate All Around Devices
CSW2019 (2019/5/21) invited
[Presenter]Roger Loo, Anurag Vohra, Clement Porret, Andriy Hikavyy, Erik Rosseel, Marc Schaekers, Elena Capogreco, Yosuke Shimura, David Kohen, John Tolle, and Wilfried Vandervorst
[29]. Bioimaging and Photothermal Study of NaGdF4:Yb:Tm@Cu Core-Shell Nanostructures
ISPlasma2019 (2019/3/) other
[Presenter]Mohamed Mathar Sahib Ibrahim Khaleelullah, Kyohei Sugimoto, Asahi Tanaka, Thangaraju Dheivasigamani, Wataru Inami Yoshimasa Kawata, Yosuke Shimura, and Yasuhiro Hayakawa
[30]. Polycrystalline GeSn Layer Formed on Self-assembled Sn Nanodots
5th International Conference on Nanoscience and Nanotechnology (ICONN2019) (2019/1/29) invited
[Presenter]Yosuke Shimura, Junya Utsumi, Tomokuni Ishimaru, and Yasuhiro Hayakawa
[31]. Cu-Mo-S-nitrogen-doped graphene hybrids as low-cost counter electrodes for dye-sensitized solar cells
5th International Conference on Nanoscience and Nanotechnology (ICONN2019) (2019/1/) other
[Presenter]R. Sankar Ganesh, Silambarasan, M. Navaneethan, S. Ponnusamy, Y. Shimura, and Y. Hayakawa
[32]. Low cost and high catalytic 1T and 2H phase MoS2 nanosheets for counter electrode in dye sensitized solar cell
The 4th International Conference on Nano Electronics Research and Education (ICNERE) & The 19th Takayanagi Kenjiro Memorial Symposium (2018/11/28) other
[Presenter]K. Silambarasan, J. Archana, M. Navaneethan, S. Harish, R. Sankar Ganesh, K. D. Nisha, Y. Shimura, K. Hara and Y. Hayakawa
[33]. Enhanced power factor of novel Cu2SexTe1-x nanobulks synthesized by two-step ball-milling and hot-pressing technique
The 4th International Conference on Nano Electronics Research and Education (ICNERE) & The 19th Takayanagi Kenjiro Memorial Symposium (2018/11/28) other
[Presenter]S. Kavirajan, J. Archana, S. Harish, M. Omprakash, K. D. Nisha, M. Navaneethan, S. Ponnusamy, C. Muthamizhchelvan, Y. Shimura, M. Shimomura and Y. Hayakawa
[34]. 有機無機混合フレキシブル材料に向けた、Si粉末/ポリピロールナノチューブ複合体の開発
第79回応用物理学会秋季学術講演会 (2018/9/19) other
[Presenter]沼澤有信、早川泰弘、志村洋介
[35]. Construction of the NaGdF4:Yb:Tm@Cu core-shell nanoparticles for effective bioimaging and photothermal therapy
第79回応用物理学会秋季学術講演会 (2018/9/19) other
[Presenter]MohamedMatharSahib IbrahimKhaleelullah, Daichi Kuroda, Asahi Tanaka, Wataru Inami, Yoshimasa Kawata, Yosuke Shimura, Yasuhiro Hayakawa
[36]. Metal sulfide nanosheet-nitrogen-doped graphene hybrids as low-cost counter electrodes for dye-sensitized solar cells
第79回応用物理学会秋季学術講演会 (2018/9/18) other
[Presenter]SankarGanesh Ramaraj, Silambarasan K, Navaneethan M, Ponnusamy S, Kong C, Y. Shimura, Y. Hayakawa
[37]. 熱伝導率低減に向けた自己整合Snナノドット上多結晶Ge1-xSnx層形成
第79回応用物理学会秋季学術講演会 (2018/9/18) other
[Presenter]内海隼也、石丸知邦、早川泰弘、志村洋介
[38]. Epitaxial GeSn: Impact of Process Conditions on Material Quality
E-MRS Fall-meeting (2018/9/17) other
[Presenter]Roger Loo, Yosuke Shimura, Shinichi Ike, Anurag Vohra, Toma Stoica, Daniela Stange, Dan Buca, David Kohen, Joe Margetis, John Tolle
[39]. Fabrication of Homogeneous Ultra-Thin Sige-on-Insulator Layer for Thermoelectric Applications
AiMES 2018 (ECS and SMEQ Joint International Meeting) (2018/9/) other
[Presenter]C. P. Goyal,M. Omprakash,K. Mutoh,Y. Shimura,H. Ikeda
[40]. Snナノドット上に形成した多結晶GeSn薄膜の熱伝導率
第二回フォノンエンジニアリング研究会 (2018/7/13) other
[Presenter]志村洋介
[41]. Reduced Thermal Conductivity of Ge1-xSnx layer Formed on Self-assembled Sn Nanodots Template
Joint ISTDM/ICSI 2018 Conference (2018/5/) other
[Presenter]Junya Utsumi,Tomokuni Ishimaru,Yasuhiro Hayakawa,Yosuke shimura
[42]. Epitaxial GeSn: Impact of Process Conditions on Material Quality
Joint ISTDM/ICSI 2018 Conference, Potsdam (2018/5/) other
[Presenter]Roger Loo,Yosuke Shimura,Shinichi Ike,Anurag Vohra,Toma Stoica
[43]. Improved thermoelectric figure of merit in silicon germanium alloy
The 2nd International Symposium on Biomedical Engineering (2017/11/) other
[Presenter]Yuko inatomi,Velu Nirmal Kumar,Yosuke Shimura,Yasuhiro Hayakawa
[44]. High surface area carbonate-doped mesoporous TiO2 nanospheres for dye sensitized solar cells applications
The 19th Takayanagi Kenjiro Memorial Symposium (2017/11/) other
[Presenter]R. Sankar Ganesh,M. Navaneethan,S. Ponnusamy,C. Muthamizhechelvan,Yosuke shimura
[45]. Synthesis of core-shell upconversion NaGdF4:Yb:Tm@Cu nanoparticles for multimodal imaging
The 19th Takayanagi Kenjiro Memorial Symposium (2017/11/) other
[Presenter]I. K. Mohamed Mathar Sahib,K. Sugimoto,T. Asahi,W. Inami,Yosuke Shimura
[46]. Enhanced Metal Induced Lateral Solid Phase Crystallization of Ge on SiO2/Si Substrate with Au Melting-Induced Seeding
The 19th Takayanagi Kenjiro Memorial Symposium (2017/11/) other
[Presenter]Selvaraj Shanthi,Yosuke Shimura,Faiz Salleh,Ponnusamy Suru,Muthamizhchelvan Chellamuthu
[47]. Development of thermoelectric cell for body temperature
The 2nd International Symposium on Biomedical Engineering (2017/11/) other
[Presenter]Shantanu Misra,Yosuke Shimura,Yasuhiro Hayakawa,H. Udono
[48]. Analysis of Homogeneous Broadening in n-type doped Ge layers on Si for laser application
2017 Photonics Conference 30th Annual Conference of the IEEE Photonics Society (2017/10/) other
[Presenter]Srinivasan Ashwyn Srinivasan,Clement Porret,Marianna Pantouvaki,Yosuke Shimura,Pieter Geiregat
[49]. Synthesis and thermoelectric properties of hydrochloric acid treated polypyrrole nanotubes
IUMRS-ICAM 2017 The 15th International Conference on Advanced Materials (2017/8/) other
[Presenter]Shantanu Misra,Meetu Bharti,Ajay Singh,Yosuke Shimura,D. K. Aswal
[50]. Impact of Sn introduction on Thermal Conductivity of Si1-xGex
IUMRS-ICAM 2017 The 15th International Conference on Advanced Materials (2017/8/) other
[Presenter]Yosuke Shimura,Takehiro Kumada,Shantanu Misra,M. Omprakash,T. Takeuchi
[51]. Inorganic and Organic Thermoelectric Materials
4th International Conference on Nanoscience and Nanotechnology (ICONN-2017) (2017/8/) invited
[Presenter]志村 洋介,Shantanu Misra,Takehiro Kumada,Ajay Singh,Yasuhiro Hayakawa
[52]. HeLa a Cancer Cell Imaging Using ZnS:Mn/NaGdF4:Yb:Er Nanocomposite
4th International Conference on Nanoscience and Nanotechnology (ICONN-2017) (2017/8/) invited
[Presenter]I.K. Mohamed Mathar Sahib,Dheivasigamani Thangaraju,Yosuke Shimura,Yoshimasa Kawata,Yasuhiro Hayakawa
[53]. Reduction of Optical Bleaching in Phosphorus doped Ge layer on Si
IEEE International Conference on Group IV Pho tonics (2017/8/) other
[Presenter]Srinivasan Ashwyn Srinivasan,Clement Porret,Marianna Pantouvaki,Yosuke Shimura,Pieter Geiregat
[54]. Luminescent imaging of HeLa cell using ZnS:Mn/NaGdF4:Yb:Er nanocomposite
2017 International Symposium toward the Future of Advanced Researchers in Shizuoka University (2017/3/) other
[Presenter]I. K. Mohamed Mathar Sahib,D. Thangaraju,Y. Kawata,志村 洋介,Y. Hayakawa
[55]. Novel SnO2 microspheres as light scattering layer for dye sensitized solar cells application
2017 International Symposium toward the Future of Advanced Researchers in Shizuoka University (2017/3/) other
[Presenter]M. Tarini,N. Prakash,I. K. Mohamed Mathar Sahib,志村 洋介,Y. Hayakawa
[56]. Efficient carbonate-doped TiO2 mesoporous nanospheres for dye sensitized solar cell
2017 International Symposium toward the Future of Advanced Researchers in Shizuoka University (2017/3/) other
[Presenter]R. Sankar ganesh,M. Navaneethan,S. Ponnusamy,志村 洋介,Y. Hayakawa
[57]. Effect of hydrochloric acid on thermoelectric properties of polypyrrole nanotubes
2017 International Symposium toward the Future of Advanced Researchers in Shizuoka University (2017/3/) other
[Presenter]Shantanu Misra,Meetu Bharti,D. K. Aswal,志村 洋介,Y. Hayakawa
[58]. GeSiSn/GeSn/GeSiSn積層構造の形成および結晶物性の評価
第16回表面科学会中部支部学術講演会 (2016/12/) other
[Presenter]福田雅大,山羽隆,浅野孝典,藤浪俊介,志村洋介
[59]. Phosphorous doped Ge layers for optical applications
JSPS MEETING 2016 (2016/11/) other
[Presenter]Srinivasan Ashwyn Srinivasan,Ashwini Prabhulinga,Yosuke Shimura,Roger Loo,Joris Van Campenhout
[60]. GeSn系IV族半導体薄膜におけるSn導入の制御と効果
第77回応用物理学会秋季学術講演会 (2016/9/) invited
[Presenter]志村 洋介,池 進一,Federica Gencarelli,竹内 和歌奈,坂下 満男
[61]. 色素増感太陽電池応用に向けた水熱合成法によるTiO2-ZnOナノ複合材料合成と特性評価
第77回応用物理学会秋季学術講演会 (2016/9/) other
[Presenter]井上貴之,ジャヤラム アーチャナ,サンダナ クリシュナン ハリッシュ,ナヴァニーザン マニ,志村洋介
[62]. 熱電応用のためのSi1-xGex及びMg2Si1-xGex結晶合成と特性評価
第77回応用物理学会秋季学術講演会 (2016/9/) other
[Presenter]高須隆太郎,Omprakash Muthusamy,Misra Shantanu,志村洋介,早川泰弘
[63]. Growth and applications of GeSn-related group-IV semiconductor materials
IEEE summer topicals meeting series (2016/7/) invited
[Presenter]Shigeaki Zaima,Osamu Nakatsuka,Takanori Asano,Takashi Yamaha,Yosuke Shimura
[64]. Development of GeSn thin film technology for electronic and optoelectronic applications
Energy materials Nanotechnology (EMN) Summer Meeting (2016/6/) invited
[Presenter]Osamu Nakatsuka,Masashi Kurosawa,Wakana Takeuchi,Yosuke Shimura,Mitsuo Sakashita
[65]. Effect of local and gloval strain on thermal stability of Sn in GeSn based film
2016 International SiGe Technology and Device Meeting (ISTDM2016) (2016/6/) other
[Presenter]Yosuke Shimura,Takanori Asano,Takashi Yamaha,Osamu Nakatsuka,Shigeaki Zaima
[66]. Direct Measurement of Anisotropic Local Strain in Ge Nanostructures Strained with MOCVD-grown GeSn by using Microdiffraction
2016 International SiGe Technology and Device Meeting (ISTDM2016) (2016/6/) other
[Presenter]Shinichi Ike,Yuki Inuzuka,Tomoya Washizu,Wakana Takeuchi,Yosuke Shimura
[67]. Formation and Characterization of GeSiSn/GeSn/GeSiSn double-Heterostructure with Strain-controlled GeSiSn layer
2016 International SiGe Technology and Device Meeting (ISTDM2016) (2016/6/) other
[Presenter]Masahiro Fukuda,Takashi Yamaha,Takanori Asano,Syunsuke Fujinami,Yosuke Shimura
[68]. Sn系IV族半導体混晶薄膜の成長と物性評価
シリコン材料・デバイス研究会 (2016/4/) invited
[Presenter]志村洋介,竹内和歌奈,坂下満男,黒澤昌志,中塚理
[69]. Laser annealed in-situ P-doped Ge for on-chip laser source applications
Photonics Europe (2016/4/) other
[Presenter]Ashwyn Srinivasan, Marianna Pantouvaki, Yosuke Shimura, Clement Porret, Rik Van Deun
[70]. 光電デバイス集積に向けたSn系IV族半導体混晶薄膜の成長と物性評価
第27回シリサイド系半導体研究会 (2016/3/) invited
[Presenter]志村洋介,竹内和歌奈,坂下満男,黒澤昌志,中塚理
[71]. 歪制御によるGeSn系混晶薄膜中Sn原子の熱的安定化
第63回応用物理学会春季学術講演会 (2016/3/) other
[Presenter]志村洋介,浅野孝典,山羽隆,中塚理,財満鎭明
[72]. MOCVD法を用いたin situ PドープGe薄膜のエピタキシャル成長
第63回応用物理学会春季学術講演会 (2016/3/) other
[Presenter]池進一,志村洋介,竹内和歌奈,中塚理,財満鎭明
[73]. GeSiSn/GeSn/GeSiSn二重ヘテロ構造の結晶性に対するGeSiSn層の歪の影響
第63回応用物理学会春季学術講演会 (2016/3/) other
[Presenter]福田雅大,山羽隆,浅野孝典,藤浪俊介,志村洋介
[74]. マイクロ回折法によるMOCVD-Ge1-xSnx/Ge細線構造内部の局所歪量評価
第63回応用物理学会春季学術講演会 (2016/3/) other
[Presenter]犬塚雄貴,池進一,鷲津智也,竹内和歌奈,志村洋介
[75]. Solid phase crystallization of SiSnC ternary alloy layers and characterization of its crystalline and optical properties
8th International Symposiium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016) (2016/3/) other
[Presenter]Shota Yano, Takashi Yamaha, Yosuke Shimura, Wakana Takeuchi, Mitsuo Sakashita
[76]. Ge Epitaxial Growth in View of Optical Device Applications
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar (2016/1/) invited
[Presenter]Roger Loo, Srinivasan Ashwyn Srinivasan, Yosuke Shimura, Clement Porret, Dries Van Thourhout
[77]. High active Phosphorus concentration in in-situ doped Ge CVD layers using low growth temperature and high order Ge precursors: toward Group-IV optical interconnects
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar (2016/1/) invited
[Presenter]Yosuke Shimura, Ashwyn Srinivasan, Dries Van Thourhout, Rik Van Deun, Marianna Pantouvaki
[78]. Structural and Electrical Properties of Low Temperature CVD-Grown SiGe Epitaxial Layers
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar (2016/1/) other
[Presenter]Shinichi Ike, Eddy Simoen, Yosuke Shimura, Andriy Hikavyy, Wilfried Vandervorst
[79]. Crystalline and Electrical Properties of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar (2016/1/) other
[Presenter]Jihee Jeon, Takanori Asano, Yosuke Shimura, Wakana Takeuchi, Masashi Kurosawa
[80]. Formation of GeSn layer sandwiched with strain-controlled GeSiSn layers
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar (2016/1/) other
[Presenter]Masahiro Fukuda, Takashi Yamaha, Takanori Asano, Syunsuke Fujinami, Yosuke Shimura
[81]. Formation of poly-Si1-x-ySnxCy ternary alloy layer and characterization of its crystalline and optical properties
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar (2016/1/) other
[Presenter]Shota Yano, Takashi Yamaha, Yosuke Shimura, Wakana Takeuchi, Mitsuo Sakashita
[82]. 有機金属化学気相成長法によるSiおよびSiO2基板上のGe選択成長機構の考察
第15回 日本表面科学会中部支部 学術講演会 (2015/12/) other
[Presenter]鷲津智也,犬塚雄貴,浅野孝典,池進一,竹内和歌奈
[83]. Enhancement of Active Phosphorus Concentration in Ge CVD layers in View of Group-IV Optical Interconnections using Low Temperature in-situ Doping and High Order Ge Precursors
International Symposium on EcoTopia Science (ISETS) (2015/11/) other
[Presenter]Yosuke Shimura, Ashwyn Srinivasan, Dries Van Thourhout, Rik Van Deun, Marianna Pantouvaki
[84]. Crystalline and Electrical Properties of Ge1-xSnx Epitaxial Layers with in-situ Sb-Doping
SC東海地区学術講演会 (2015/11/) other
[Presenter]全智禧, 浅野孝典, 志村洋介, 竹内和歌奈, 黒澤昌志
[85]. 固相成長法による Si 1-x-y Sn x C y 薄膜の形成および結晶・光学物性評価
SC東海地区学術講演会 (2015/11/) other
[Presenter]矢野翔大, 山羽隆, 黒澤昌志, 竹内和歌奈, 志村洋介
[86]. Crystal Growth and Energy Band Engineering of Group-IV Semiconductor Thin Films for Nanoelectronic Applications
The first International Workshop on Advanced Nanomaterials for Future Electron Devices 2015 (IWAN2015) (2015/11/) other
[Presenter]O. Nakatsuka, M. Kurosawa, W. Takeuchi, Y. Shimura, M. Sakashita
[87]. 高次Geプリカーサーを用いた低温in-situ Pドーピングによる高活性Ge:P形成
第4回結晶工学未来塾 (2015/10/) other
[Presenter]志村洋介,Srinivasan Ashwyn Srinivasan,Dries Van Thourhout,Rik Van Deun,Marianna Pantouvaki
[88]. 低温成長SiGeエピタキシャル薄膜中の結晶性および電気的欠陥評価
第4回結晶工学未来塾 (2015/10/) other
[Presenter]池進一,Eddy Simoen, 志村洋介, Andriy Hikavyy, Wilfried Vandervorst
[89]. Influence of Precursor Gas on SiGe Epitaxial Material Quality in Terms of Structural and Electrical Defects
International Conference on Solid State Devices and Materials (SSDM) (2015/9/) other
[Presenter]Shinichi Ike, Eddy Simoen, Yosuke Shimura, Andriy Hikavyy, Wilfried Vandervorst
[90]. Enhanced Ge Photoluminescence by increasing the active P doping using high order Ge precursors at lower growth temperatures
European Materials Research Society (E-MRS) fall meeting and Exhibit (2015/9/) other
[Presenter]Yosuke Shimura, Ashwyn Srinivasan, Dries Van Thourhout, Rik Van Deun, Marianna Pantouvaki
[91]. Epitaxial Ge growth in Ultra Narrow STI Patterned Si wafers
European Materials Research Society (E-MRS) fall meeting and Exhibit (2015/9/) other
[Presenter]Andriy Hikavyy, Roger Loo, Jianwu Sun, Yosuke Shimura, Hugo Bender
[92]. エピタキシャルSi1?xGex薄膜中の欠陥構造に対する前駆体ガス原料の効果
第76回応用物理学会秋季学術講演会 (2015/9/) other
[Presenter]池進一, Eddy Simoen, 志村洋介, Andriy Hikavyy, Wilfried Vandervorst
[93]. Low temperature in-situ P-doped Ge epitaxy using Ge2H6 in view of optical applications
9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9) (2015/5/) other
[Presenter]Yosuke Shimura, Ashwyn Srinivasan, Dries Van Thourhout, Rik Van Deun, Marianna Pantouvaki
[94]. Epitaxial Ge growth in Ultra Narrow STI Patterned Si Wafers
9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9) (2015/5/) other
[Presenter]Roger Loo, Andriy Hikavyy, Jianwu Sun, Yosuke Shimura, Hugo Bender
[95]. Current transients in reverse-biased p-Ge1-xSnx/nGe diodes
9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9) (2015/5/) other
[Presenter]Bruno Baert, Somya Gupta, Federica Gencarelli, Yosuke Shimura, Roger Loo
[96]. C atom distribution in Si:C and Si:C:P epitaxial layers studied using Raman spectroscopy
9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9) (2015/5/) other
[Presenter]Sathish kumar Dhayalan, Thomas Nuytten, Roger Loo, Erik Rosseel, Andriy Hikavyy
[97]. High Resolution X-ray Diffraction for in-line Monitoring of Ge MOSFET Devices
Frontiers of Characterization and Metrology for Nanoelectronics (2015/4/) other
[Presenter]Paul Ryan, Matthew Wormington, Jianwu Sun, Andriy Hikavyy, Yosuke Shimura
[98]. Study for Ge1-xSnx lasers: Band calculation and Suppression of Sn agglomerations
JSPS workshop “Atomically Controlled Processing for Ultra-large Scale Integration (2014/11/) other
[Presenter]Yosuke Shimura, Wei Wang, Wilfried Vandervorst, Federica Gencarelli, Andre Vantomme
[99]. Study of GeSn strain relaxation and thermal stability in view of strain relaxed buffer layer applications
JSPS workshop “Atomically Controlled Processing for Ultra-large Scale Integration (2014/11/) other
[Presenter]Wei Wang, Roger Loo, Yosuke Shimura,Wilfried Vandervorst
[100]. Ge1-xSnx Optical Devices: Growth and Applications
226th ECS-fall meeting (2014/10/) invited
[Presenter]Yosuke Shimura, Wei Wang, Wilfried Vandervorst, Federica Gencarelli, Alban Gassenq
[101]. Positron Annihilation Spectroscopy on Open-Volume Defects in Group IV Semiconductors
226th ECS-fall meeting (2014/10/) other
[Presenter]J. Slotte, F. Tuomisto, J. Kujala, A.M. Holm, N. Segercrantz
[102]. Material studies on Si:C and Si:CP epitaxial films grown using disilane, monomethylsilane and Phosphine
226th ECS-fall meeting (2014/10/) other
[Presenter]Sathish Dhayalan, Roger Loo, A. Hikavyy, E. Rosseel, B. Douhard
[103]. Profiling of Border Traps at Ge1-xSnx and high-k oxide Interface
226th ECS-fall meeting (2014/10/) other
[Presenter]Somya Gupta, E. Simoen, A. Dobri, H. Vrielinck, J. Lauwaert
[104]. Catalyst assisted low temperature pre epitaxial cleaning for Si and SiGe surfaces
12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) (2014/9/) other
[Presenter]Sathish Kumar Dhayalan, Andriy Hikavyy, Roger Loo, Kurt Wostyn, Karine Kenis
[105]. Suppression of Sn agglomerations on Ge1-xSnx surface
E-MRS 2014 Fall Meeting, Warsaw (2014/9/) other
[Presenter]Yosuke Shimura, Wei Wang, Wilfried Vandervorst, Matty Caymax, Roger Loo
[106]. A. Selective growth of strained Ge on relaxed SiGe in shallow trench isolation for p-MOS FINFET
E-MRS 2014 Fall Meeting, Warsaw (2014/9/) other
[Presenter]J. Sun, R. Loo, L. Witters, A. Hikavyy, Y. Shimura
[107]. In-situ and ex-situ strain relaxation in Ge1-xSnx for SRB Application
E-MRS 2014 Fall Meeting, Warsaw (2014/9/) other
[Presenter]Wei Wang, Yosuke Shimura, W. Vancervorst, Roger Loo
[108]. Use of X-ray techniques in the development of Ge MOSFET devices
E-MRS 2014 Fall Meeting, Warsaw (2014/9/) other
[Presenter]J. Sun, A. Hikavyy, Y. Shimura, L. Witters, H. Tielens
[109]. Defects reduction and characterization of epitaxial Si:C/Si:C:P layers grown using cyclic deposition and etching technique
E-MRS 2014 Fall Meeting, Warsaw (2014/9/) other
[Presenter]Sathish kumar Dhayalan, Roger loo, Erik Rosseel, Andriy Hikavyy, Yosuke Shimura
[110]. Long-wavelength silicon photonic integrated circuits
11th International conference on Group IV photonics (2014/8/) other
[Presenter]G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu
[111]. Strained Ge FINfet structures fabricated by selective epitaxial growth
7th International Si1-xGex Technology and Device Meeting (ISTDM) (2014/6/) other
[Presenter]R. Loo, J. Sun, L. Witters, A. Hikavyy, B. Vincent
[112]. Mid-IR heterogeneous silicon photonics
Quantum Sensing and Nanophotonic Devices XI (2014/2/) other
[Presenter]G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu
[113]. Strained germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped Si1-xGex strain relaxed buffer layers using a replacement fin process
International Electron Devices Meeting (IEDM) (2013/12/) other
[Presenter]L. Witters, J. Mitard, R. Loo, G. Eneman, H. Mertens
[114]. Theoretical and experimental investigation of the Ge1-xSnx bandgap
E-MRS 2013 Fall Meeting (2013/9/) other
[Presenter]Yosuke Shimura, Wei Wang, Federica Gencarelli, Benjamin Vincent, Thomas Nieddu
[115]. Germanium-on-Silicon mid-infrared waveguides and Mach-Zehnder interferometers
IEEE Photonics Conference (IPC) (2013/9/) other
[Presenter]Aditya Malik, M. Muneeb, Y. Shimura, J. Van Campenhout, R. Loo
[116]. Long-wavelength III-V/Silicon photonic integrated circuits
Advanced Photonics – OSA Optics & Photonics Congress. Rio Grande (2013/7/) other
[Presenter]G. Roelkens, B. Kuyken, F. Leo, N. Hattasan, E. Ryckeboer
[117]. Bandgap measurement by spectroscopic ellipsometry for strained Ge1-xSnx
8th International conference on Silicon Epitaxy and Heterostructures (ICSI-8) (2013/6/) other
[Presenter]Yosuke Shimura, Wei Wang, Thomas Nieddu, Federica Gencarelli, Benjamin Vincent
[118]. EXAFS study of Sn local environment in strained and relaxed CVD grown epitaxial Ge1-xSnx films
8th International conference on Silicon Epitaxy and Heterostructures (ICSI-8) (2013/6/) other
[Presenter]F. Gencarelli, D. Grandjean, Y. Shimura, B. Vincent, A. Vantomme
[119]. Composition and thickness dependence of Ge1-xSnx growth by chemical vapor deposition
8th International conference on Silicon Epitaxy and Heterostructures (ICSI-8) (2013/6/) other
[Presenter]Wei Wang, Yosuke Shimura, Thomas Nieddu, Federica Gencarelli, Ngoc Duy Nduyen
[120]. Electrical Activity of Threading Dislocations and Defect Complexes in GeSn Epitaxial Layers
8th International conference on Silicon Epitaxy and Heterostructures (ICSI-8) (2013/6/) other
[Presenter]S. Gupta, E. Simoen, T. Asano, O. Nakatsuka, F. Gencarelli
[121]. Increase responsivity in Ge1-xSnx QWs photodetectors
Materials for Advanced Metallization (MAM2013) (2013/3/) other
[Presenter]Yosuke Shimura, Federica Gencarelli, Benjamin Vincent, Alban Gassenq, Gunther Roelkens
[122]. A comparative study of metal germanide formation on Ge1-xSnx
Materials for Advanced Metallization (MAM2013) (2013/3/) other
[Presenter]J. Demeulemeester, A. Schrauwen, K. Van Stiphout, O. Nakatsuka, M. Adachi
[123]. Growth and Optical Properties of Ge1-xSnx Alloy Thin Films with a High Sn Content
The PRiME 2012 Joint International (222nd) ECS Meeting (2012/10/) invited
[Presenter]S. Zaima, O. Nakatsuka, M. Nakamura, W. Takeuchi, Y. Shimura
[124]. Impact of Sn corporation on Epitaxial Growth of Ge Layers on Si(110) Substrates
International Conference on Solid State Devices and Materials (SSDM2012) (2012/9/) other
[Presenter]S. Kidowaki, T. Asano, Y. Shimura, N. Taoka, O. Nakatsuka
[125]. In situ Sb doping in Ge1-xSnx Epitaxial Layers with High Sn Contents
IUMRS International Conference on Electronic Materials (IUMRS-ICEM2012) (2012/9/) other
[Presenter]K. Hozaki, M. Nakamura, Y. Shimura, W. Takeuchi, N. Taoka
[126]. Epitaxial Growth of Ge1-xSnx Layers on (110)-oriented Si and Ge Substrates
IUMRS International Conference on Electronic Materials (IUMRS-ICEM2012) (2012/9/) other
[Presenter]T. Asano, S. Kidowaki, Y. Shimura, N. Taoka, O. Nakatsuka
[127]. 高Sn組成Ge1-xSnx層へのin situ Sbドーピング
第73回応用物理学会学術講演会 (2012/9/) other
[Presenter]保崎航也,中村茉里香,志村洋介,竹内和歌奈,田岡紀之
[128]. Ge(001)微細パターニング基板上への局所Ge1-xSnxヘテロエピタキシャル成長
第73回応用物理学会学術講演会 (2012/9/) other
[Presenter]池進一,志村洋介,守山佳彦,手塚勉,中塚理
[129]. Potential of GeSn Alloys for Application to Si Nanoelectronics
2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2012) (2012/6/) invited
[Presenter]S. Zaima, Y. Shimura, M. Nakamura, W. Takeuchi, M. Sakashita
[130]. Epitaxial Growth and Characterization of GeSn Layers on Ge(110) and Si(110) Substrates
CNSE and JSPS Core-to-Core Program Joint Seminar (2012/6/) other
[Presenter]T. Asano, S. Kidowaki, Y. Shimura, N. Taoka, O. Nakatsuka
[131]. GeSn Alloy for Nanoelectronic and Optoelectronic Devices
CNSE and JSPS Core-to-Core Program Joint Seminar (2012/6/) other
[Presenter]O. Nakatsuka, Y. Shimura, W. Takeuchi, N. Taoka, S. Zaima
[132]. Epitaxial Growth and Anisotropic Strain Relaxation of Ge1-xSnx Layers on Ge(110) Substrates
The 6th International SiGe Technology and Device Meeting (ISTDM2012) (2012/6/) other
[Presenter]T. Asano, Y. Shimura, N. Taoka, O. Nakatsuka, S. Zaima
[133]. Optical Properties of Ge1-xSnx Epitaxial Layers with Very High Sn Contents
The 6th International SiGe Technology and Device Meeting (ISTDM2012) (2012/6/) other
[Presenter]M. Nakamura, Y. Shimura, W. Takeuchi, N. Taoka, O. Nakatsuka
[134]. Material properties and applications of Ge1-xSnx alloys for Ge Nanoelectronics
The 6th International SiGe Technology and Device Meeting (ISTDM2012) (2012/6/) invited
[Presenter]O. Nakatsuka, Y. Shimura, W. Takeuchi, S. Zaima
[135]. 超高Sn組成Ge1-xSnx層の光学特性評価
2012年春季 第59回 応用物理学関係連合講演会 (2012/3/) other
[Presenter]中村茉里香,志村洋介,竹内和歌奈,中塚理,財満鎭明
[136]. Si(110)基板上におけるGeおよびGe1-xSnxヘテロエピタキシャル成長
2012年春季 第59回 応用物理学関係連合講演会 (2012/3/) other
[Presenter]木戸脇翔平,浅野孝典,志村洋介,中塚理,財満鎭明
[137]. ヘテロエピタキシャルGe1-xSnx中のGa活性化に及ぼすSnの効果
2012年春季 第59回 応用物理学関係連合講演会 (2012/3/) other
[Presenter]志村洋介,中塚理,Benjamin Vincent,Federica Gencarelli,Trudo Clarysse
[138]. InP基板上への超高Sn組成Ge1-xSnx層のヘテロエピタキシャル成長
第11回 日本表面科学会中部支部・学術講演会 (2011/12/) other
[Presenter]中村茉里香,志村洋介,竹内正太郎,中塚理,財満鎭明
[139]. Sn添加および水素熱処理を用いたGeヘテロエピタキシャル層の電気伝導特性制御
第11回 日本表面科学会中部支部・学術講演会 (2011/12/) other
[Presenter]足立正樹,志村洋介,中塚理,財満鎭明
[140]. GeSn Technology: Impact of Sn on Ge CMOS Applications
220th Electro Chemical Society Meeting (2011/10/) invited
[Presenter]S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi, B. Vincent
[141]. Strain and Dislocation Structures of Ge1-xSnx Heteroepitaxial Layers Grown on Ge(110) Substrates
International Conference on Solid State Devices and Materials (SSDM2011) (2011/9/) other
[Presenter]T. Asano, Y. Shimura, O. Nakatsuka, S. Zaima
[142]. Strained Ge Layers on SiGe(Sn) Buffer Layers Formed by Solid-phase Mixing Method
International Conference on Solid State Devices and Materials (SSDM2011) (2011/9/) other
[Presenter]T. Yamaha, K. Mochizuki, Y. Shimura, O.Nakatsuka, S. Zaima
[143]. Control of Defect Properties in Ge Heteroepitaxial Layers by Sn Incorporation and H2-Annealing
International Conference on Solid State Devices and Materials (SSDM2011) (2011/9/) other
[Presenter]M. Adachi, Y. Shimura, O. Nakatsuka, S. Zaima
[144]. MBE growth and crystalline properties of GeSn heteroepitaxial layers
2nd GeSnWorkshop: GeSn Development and Future Applications (2011/9/) other
[Presenter]Y. Shimura
[145]. Electrical and optical properties of GeSn alloys
2nd GeSnWorkshop: GeSn Development and Future Applications (2011/9/) other
[Presenter]O. Nakatsuka, Y. Shimura, M. Adachi, M. Nakamura, S. Zaima
[146]. Sn添加および水素熱処理がGeエピタキシャル層中の欠陥に与える影響
2011年秋季 第72回 応用物理学会学術講演会 (2011/8/) other
[Presenter]足立正樹,志村洋介,中塚理,財満鎭明
[147]. Ge(110)基板上へのGe1-xSnxヘテロエピタキシャル層成長
2011年秋季 第72回 応用物理学会学術講演会 (2011/8/) other
[Presenter]浅野孝典,志村洋介,中塚理,財満鎭明
[148]. 固相拡散法を用いて形成したSi1-xGex on Insulator基板上への歪Ge層成長
2011年秋季 第72回 応用物理学会学術講演会 (2011/8/) other
[Presenter]山羽隆,志村洋介,中塚理,財満鎭明
[149]. In-situ Ga Doping to Fully Strained Ge1-xSnx Heteroepitaxial Layers Grown on Ge(001) Substrates
7th International Conference on Si Epitaxy and Heterostructures (2011/8/) other
[Presenter]Y. Shimura, S. Takeuchi, O. Nakatsuka, B. Vincent, F. Gencarelli
[150]. Growth of Ge1-xSnx heteroepitaxial layers with very high Sncontents on InP(001) substrates
7th International Conference on Si Epitaxy and Heterostructures (2011/8/) other
[Presenter]M. Nakamura, Y. Shimura, S. Takeuchi , O. Nakatsuka, S. Zaima
[151]. Low Temperature Formation of Si1-x-yGexSny-on-Insulator Structures by Using Solid-Phase Mixing of Ge1-zSnz/Si-on-Insulator Substrates
7th International Conference on Si Epitaxy and Heterostructures (2011/8/) other
[Presenter]K. Mochizuki, T. Yamaha, Y. Shimura, O. Nakatsuka, S. Zaima
[152]. Epitaxial Growth of Ge1-xSnx for Strained Ge CMOS Devices
THERMEC' 2011 (International Conference on Processing & Manufacturing of Advanced Materials) (2011/8/) other
[Presenter]S. Zaima, Y. Shimura, S. Takeuchi, O. Nakatsuka
[153]. 固相拡散法を用いたSi1-x-yGexSny on Insulator構造の形成
2011年春季 第58回 応用物理学関係連合講演会 (2011/3/) other
[Presenter]望月健太,山羽隆,志村洋介,中塚理,財満鎭明
[154]. InP基板上への超高Sn組成Ge1-xSnxヘテロエピタキシャル層成長
2011年春季 第58回 応用物理学関係連合講演会 (2011/3/) other
[Presenter]中村茉里香,志村洋介,竹内正太郎,中塚理,財満鎭明
[155]. Ge(110)基板上Ge1-xSnxヘテロエピタキシャル層における異方的歪緩和
2011年春季 第58回 応用物理学関係連合講演会 (2011/3/) other
[Presenter]浅野孝典,志村洋介,中塚理,財満鎭明
[156]. Ge1-xSnxソース/ドレインストレッサーのためのNi(Ge1-ySny)/Ge1-xSnx/Geコンタクト形成
第10回 日本表面科学会中部支部 学術講演会 (2010/12/) other
[Presenter]西村剛志,中塚 理,志村洋介,竹内正太郎,Benjamin Vincent
[157]. Tensile-Strained Ge and Ge1-xSnx Layers for High-Mobility Channels in Future CMOS Devices
International Conference on Solid-State and Integrated Circuit Technology (2010/11/) invited
[Presenter]S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi
[158]. Control of Strain Relaxation Behavior of Ge1-xSnx Layers for Tensile Strained Ge Layers
218th ECS Meeting (2010/10/) other
[Presenter]Y. Shimura, S. Takeuchi, O. Nakatsuka, S. Zaima
[159]. Assessment of Ge1-xSnx Alloys for Strained Ge CMOS Devices
218th ECS Meeting (2010/10/) invited
[Presenter]S. Takeuchi, Y. Shimura, T. NiShimura, B. Vincent, G. Eneman
[160]. Ni(Ge1-ySny)/Ge1-xSnx/Geコンタクトの形成と結晶構造評価
2010年秋季 第71回 応用物理学会学術講演会 (2010/9/) other
[Presenter]西村剛志,中塚 理,志村洋介,竹内正太郎,Benjamin Vincent
[161]. 歪Ge1-xSnx層への高濃度不純物ドーピング
2010年秋季 第71回 応用物理学会学術講演会 (2010/9/) other
[Presenter]志村洋介,竹内正太郎,Benjamin Vincent,Geert Eneman,Trudo Clarysse
[162]. Growth and Characterization of GeSn and Tensile-Strained Ge Layers for High Mobility Channels of CMOS Devices
The 7th Pacific Rim International Conference on Advanced Materials and Processing (2010/8/) other
[Presenter]O. Nakatsuka, Y. Shimura, S. Takeuchi, S. Zaima
[163]. Formation of Ge1-xSnx heteroepitaxial layers with high Sn content
International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE) (2010/6/) other
[Presenter]Y. Shimura, S. Takeuchi, O. Nakatsuka, A. Sakai, S. Zaima
[164]. Strained Ge and Ge1-xSnx technology for future CMOS devices
International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE) (2010/6/) other
[Presenter]S. Zaima, O. Nakatsuka, S. Takeuchi, Y. Shimura, A. Sakai
[165]. Epitaxial GeSn Growth using MBE
International Workshop of GeSn Developments and Future Applications (2010/5/) other
[Presenter]Y. Shimura
[166]. Material Assessment for uni-axial strained Ge pMOS -1: Characterization of GeSn(B) materials
International Workshop of GeSn Developments and Future Applications (2010/5/) other
[Presenter]B. Vincent, Y. Shimura, S. Takeuchi, T. NiShimura, J. Demeulemeester
[167]. Material Assessment for uni-axial strained Ge pMOS-2: Formation of Ni(GeSn) Layers with Solid-Phase Reactor
International Workshop of GeSn Developments and Future Applications (2010/5/) other
[Presenter]T. NiShimura, Y. Shimura, S. Takeuchi, B. Vincent, A. Vantomme
[168]. Bi-axially strained Ge grown on GeSn SRBs
International Workshop of GeSn Developments and Future Applications (2010/5/) other
[Presenter]O. Nakatsuka, S. Takeuchi, Y. Shimura, A. Sakai, S. Zaima
[169]. Control of Strain Relaxation Behavior of Ge1-xSnx Layers: Toward Tensile-Strained Ge Layers with Strain Value over 1%
5th International SiGe Technology Device Meeting 2010 (ISTDM2010) (2010/5/) other
[Presenter]Y. Shimura, S. Takeuchi, N. Tsutsui, O. Nakatsuka, A. Sakai
[170]. Ge1-xSnx stressors for strained-Ge CMOS
5th International SiGe Technology Device Meeting 2010 (ISTDM2010) (2010/5/) invited
[Presenter]S. Takeuchi, Y. Shimura, T. NiShimura, B. Vincent, G. Eneman
[171]. Formation of Ni(Ge1-xSnx) Layers with Solid-Phase Reaction in Ni/Ge1-xSnx/Ge Systems
5th International SiGe Technology Device Meeting 2010 (ISTDM2010) (2010/5/) other
[Presenter]T. NiShimura, Y. Shimura, S. Takeuchi, B. Vincent, A. Vantomme
[172]. ミスフィット制御による高Sn組成歪緩和Ge1-xSnx層の形成と電気特性評価
科学研究費補助金特定領域研究シリコンナノエレクトロニクスの新展開-ポストスケーリングテクノロジー-第四回成果報告会 (2010/3/) other
[Presenter]志村洋介,筒井宣匡,竹内正太郎,中塚理,酒井朗
[173]. Strain Relaxation Behavior of Ge1-xSnx Buffer Layers on Si and Virtual Ge Substrates
5th International WorkShop on New Group IV Semiconductor Nanoelectronics (2010/1/) other
[Presenter]Y. Shimura, S. Takeuchi, N. Tsutsui, O. Nakatsuka, A. Sakai
[174]. Potential of Ge1-xSnx alloys as high mobility channel materials and stressors
5th International WorkShop on New Group IV Semiconductor Nanoelectronics (2010/1/) other
[Presenter]S. Takeuchi, Y. Shimura, T. Tsutsui, O. Nakatsuka, A. Sakai
[175]. Mobility Behavior in Ge1-xSnx Layers Grown on SOI Substrates
2009 International Conference on Solid State Devices and Materials (SSDM) (2009/10/) other
[Presenter]N. Tsutsui, Y. Shimura, O. Nakatsuka, A. Sakai, S. Zaima
[176]. Si(001)基板上への高Sn組成歪緩和Ge1-xSnxバッファ層の形成
2009年秋季 第70回 応用物理学会学術講演会 (2009/9/) other
[Presenter]志村洋介,筒井宣匡,中塚理,酒井朗,財満鎭明
[177]. SOI基板上に成長したGe1-xSnx層のキャリア移動度評価
2009年秋季 第70回 応用物理学会学術講演会 (2009/9/) other
[Presenter]筒井宣匡,志村洋介,中塚理,酒井朗,財満鎭明
[178]. Low Temperature Growth of Ge1-xSnx Buffer Layers for Tensile-strained Ge Layers
The 6th International Conference on Silicon Epitaxy and Heterostructures (2009/5/) other
[Presenter]Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima
[179]. Formation and characterization of tensile-strained Ge layers on Ge1-xSnx buffer layers
The 6th International Conference on Silicon Epitaxy and Heterostructures (2009/5/) invited
[Presenter]S. Zaima, O. Nakatsuka, Y. Shimura, N. Tsutsui, A. Sakai
[180]. Analysis of Local Strain in Ge1-xSnx /Ge/Si(001) Heterostructures by X-ray Microdiffraction
The 6th International Conference on Silicon Epitaxy and Heterostructures (2009/5/) other
[Presenter]O. Nakatsuka, Y. Shimura, N. Tsutsui, A. Sakai, Y. Imai
[181]. 低温成長による高Sn組成Ge1-xSnxバッファ層の形成
第56回 応用物理学関係連合講演会 (2009/3/) other
[Presenter]志村洋介,筒井宣匡,中塚理,酒井朗,財満鎭明
[182]. 伸張歪Ge形成のための高Sn組成Ge1-xSnxバッファ層成長
第8回日本表面科学会中部支部学術講演会 (2008/12/) other
[Presenter]志村洋介,筒井宣匡,中塚理,酒井朗,財満鎭明
[183]. Formation and Characterization of Tensile-strained Ge layers on Ge1-xSnx Buffer Layers
The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008) (2008/12/) other
[Presenter]Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima
[184]. Challenges in Materials and Processing for Nano-Scaled CMOS
PRiME 2008-Joint International Meeting of 214th Meeting of The Electrochemical Society and 2008 Fall Meeting of The Electrochemical Society of Japan (2008/10/) invited
[Presenter]A. Sakai, Y. Ohara, T. Ueda, E. Toyoda, K. Izunome
[185]. Formation and Characterization of Compositionally Step-graded Ge1-x Snx Buffer Layers for Tensile-strained Ge Layers
4th International WorkShop on New Group IV Semiconductor Nanoelectronics (2008/9/) other
[Presenter]Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima
[186]. Formation of Tensile-Strained Ge Layers on Ge1-xSnx Buffer Layers and Control of Strain and Dislocation Structures
4th International WorkShop on New Group IV Semiconductor Nanoelectronics (2008/9/) other
[Presenter]O. Nakatsuka, Y. Shimura, A. Sakai, S. Zaima
[187]. Control of Sn Precipitation and Strain relaxation in Compositionally Step-graded Ge1-xSnx Buffer Layers for Tensile-strained Ge Layers
2008 International Conference on Solid State Devices and Materials (SSDM) (2008/9/) other
[Presenter]Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima
[188]. 伸張歪Ge形成に向けたGe1-xSnxバッファ層のSn組成及び転位構造制御
2008年秋季 第69回応用物理学会学術講演会 (2008/9/) other
[Presenter]志村洋介,筒井宣匡,中塚理,酒井朗,財満鎭明
[189]. Tensile Strained Ge Layers Grown on Compositionally Step-Graded Ge1-xSnx Buffer Layers
The 3nd international workshop on new group IV semiconductor nanoelectronics (2007/11/) other
[Presenter]Y. Shimura, S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa
[190]. 組成傾斜法による仮想Ge基板上歪緩和Ge1-xSnx層形成と構造評価
2007年秋季 第68回応用物理学会学術講演会 (2007/9/) other
[Presenter]志村洋介,竹内正太郎,酒井朗,中塚理,小川正毅