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Researcher DataBase - Personal Information : SHIMURA Yosuke

Papers, etc.

【Papers, etc.】
[1]. Fine structural and photoluminescence properties of Mg2Si nanosheet bundles rooted on Si substrates
Jpn. J. Appl. Phys. 60/ SBBK07- (2021) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] T. Koga, R. Tamaki, X. Meng, Y. Numazawa, Y. Shimura, N. Ahsan, Y. Okada, A. Ishida, and H. Tatsuoka
[2]. Thermal conductivity and inelastic x-ray scattering measurements on SiGeSn polycrystalline alloy
Jpn. J. Appl. Phys. 60/ SBBF11- (2021) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] author
[Author] Yosuke Shimura, Kako Iwamoto, Ryo Yokogawa, Motohiro Tomita, Hirokazu Tatsuoka, Hiroshi Uchiyama, and Atsushi Ogura
[3]. Synthesis of CaF2 Nanostructures from Calcium Silicide Powders in Diluted Aqueous HF Solution
Jpn. J.Appl.Phys. Conf. Proc. 8/ 011103- (2020) [Refereed] non-refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] Yoshiki Ono, Ryohei Ogino, Masaki Sakaida, Keigo Sasaki, Nanae Atsumi, Yushin Numazawa, Shogo Itoh, Tomoya Koga, Yalei Huang, Yosuke Shimura, Hirokazu Tatsuoka, and Naohisa Takahashi [Notes] accepted
[4]. Effect of Zn doping in CuO octahedral crystals towards structural, optical and gas sensing properties
Crystals 10/ 188- (2020) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] Chandra Prakash Goyal, Deepak Goyal, K. R. Sinju, Niranjan S. Ramgir, Yosuke Shimura, Mani Navaneethan, Yasuhiro Hayakawa, C. Muthamizhchelvan, Hiroya Ikeda, S. Ponnusamy
[5]. Topological Synthesis of Mg-based Silicate Nanosheet Bundles from CaSi2 crystals
Jpn. J. Appl. Phys. 59/ SFFD02- (2020) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] Yushin Numazawa, Shogo Itoh, Yoshiki Ono, Yalei Huang, Yosuke Shimura, Yasuhiro Hayakawa, and Hirokazu Tatsuoka
[6]. Synthesis of Ge-based nanosheet bundles using calcium germanides as templates in IP6 aqueous solution
Jpn. J. Appl. Phys. 59/ SGGK08- (2020) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] Vimal Saxena, Nanae Atsumi, Yosuke Shimura, and Hirokazu Tatsuoka
[7]. Synthesis of Si Nanowire/Nanosheet Complexes from CaSi2 crystals by Thermal Annealing under MnCl2/NH4Cl Vapors
Jpn. J. Appl. Phys. 59/ SFFD01- (2020) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] Shogo Itoh, Yushin Numazawa, Yoshiki Ono, Yalei Huang, Yosuke Shimura, Naohisa Takahashi, and Hirokazu Tatsuoka
[8]. Effect of ethylenediamine on morphology of 2D Co-Mo-S@NG hybrids and their enhanced electrocatalytic activity for DSSCs application
Materials Science in Semiconductor Processing 105/ 104725-1-104725-8 (2019) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] R. Sankar Ganesh, E. Durgadevi, K. Silambarasan, M. Navaneethan, S. Ponnusamy, C. Y. Kong, C. Muthamizhchelvan, Y. Shimura and Y. Hayakawa
[9]. Fabrication of ultrathin poly-crystalline Si1-xGex-on-insulator layer for thermoelectric applications
J. Phys. Commun 3/ - (2019) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] Chandra Goyal, Omprakash Muthusamy, Mani Navaneethan, Tsunehiro Takeuchi, Yosuke Shimura, Masaru Shimomura, S. Ponnusamy, Yasuhiro Hayakawa, and Hiroya Ikeda
[10]. Zn and Sr co-doped TiO2 mesoporous nanospheres as photoanodes in dye sensitized solar cell
Materials Chemistry and Physics 234/ 259-267 (2019) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] Sankar Ganesh R, Aamir Mamajiwala, E. Durgadevi, M. Navaneethan, S. Ponnusamy, C. Y. Kong, C. Muthamizhchelvan, Y. Shimura, Y. Hayakawa
[11]. Insights into the C distribution in Si:C/Si:C:P and the annealing behavior of Si:C layers
ECS J. Solid State Sci. Technol. 8/ P209-P216 (2019) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] Sathish kumar Dhayalan, Thomas Nuytten, Geoffrey Pourtois, Eddy Simoen, Fabio Pezzoli, Eugenio Cinquanta, Emiliano Bonera, Roger Loo, Erik Rosseel, Andriy Hikavyy, Yosuke Shimura, and Wilfried Vandervorst
[12]. Metal sulfide nanosheet-nitrogen-doped graphene hybrids as low-cost counter electrodes for dye-sensitized solar cells
Appl. Sur. Sci. 480/ 177-185 (2019) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] Sankar Ganesh R, K. Silambarasan, E. Durgadevi, M. Navaneethan, S. Ponnusamy, C. Kong, C. Muthamizhchelvan, Y. Shimura, and Y. Hayakawa
[13]. Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si
Applied Physics Letters 113/ 192103-1-192103-5 (2018) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] Somya Gupta, Yosuke Shimura, Olivier Richard, Bastien Douhard, Eddy Simoen, Hugo Bender, Osamu Nakatsuka, Shigeaki Zaima
[14]. Reduced Thermal Conductivity of Ge1-xSnx Layer Formed on Self-assembled Sn Nanodots Template
Semiconductor Science and Technology 33/ 124004-1-124004-7 (2018) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] Junya Utsumi, Tomokuni Ishimaru, Yasuhiro Hayakawa, and Yosuke Shimura
[15]. Epitaxial GeSn: impact of process conditions on material quality
Semiconductor Science and Technology 33/ 114010-1-114010-9 (2018) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] Roger Loo, Yosuke Shimura, Shinichi Ike, Anurag Vohra, Toma Stoica, Daniela Stange, Dan Buca, David Kohen, Joe Margetis, and John Tolle
[16]. Carrier scattering induced broadening in in-situ P-doped Ge layers on Si
Applied Physics Letters 113/ 161101-1-161101-5 (2018) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] Srinivasan Ashwyn Srinivasan, Dries Van Thourhout, Clement Porret, Marianna Pantouvaki, Roger Loo, Joris Van Campenhout, Yosuke Shimura, Pieter Geiregat
[17]. Electrical Properties of Extended Defects in Strain Relaxed GeSn
Applied Physics Letters 113/ 022102-1-022102-5 (2018) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] Somya Gupta, Eddy Simoen, Roger Loo, Yosuke Shimura, Clement Porret, Federica Gencarelli, Kristof Paredis, Hugo Bender, Henk Vrielinck, Marc Heyns [Notes] IF=3.495 (2017)
[18]. Influence of Au on Ge crystallization and its thermoelectric properties in a Au-induced Ge crystallization technique
Journal of Advannces in Physics 14/ 5460-5466 (2018) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] Shanthi Selvaraj, Faizan Khan, Shunsuke Nishino, Omprakash Muthusamy, Tsunehiro Takeuchi, Yosuke Shimura, Yasuhiro Hayakawa
[19]. Photothermally Active Upconversion Core-Shell NaGdF4:Yb:Tm@Cu Nanostructures: Synthesis and Theranostic Properties
Journal of Particle & Particle Systems Characterization / 1800227-1-1088227-8 (2018) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] I K Mohamed Mathar Sahib, A. Tanaka, D. Thangaraju, K. Sugimoto, Y. Shimura, W. Inami, Y. Kawata and Y. Hayakawa [DOI]
[20]. On the evolution of strain and electrical properties in as-grown and annealed Si:P epitaxial films for source-drain stressor applications
ECS Journal of Solid State Science and Technology 7/ 228-237 (2018) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Sathish kumar Dhayalan [共著者]Jiri Kujala,Jonatan Slotte,Eddy Simoen,Yosuke Shimura,Roger Loo [Notes] (accepted in Apr.) IF=1.866
[21]. Enhanced photon collection of high surface area carbonate-doped mesoporous TiO2 nanospheres for dye sensitized solar cells applications
Materials Research Bulletin 101/ 353-362 (2018) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]R. Sankar Ganesh [共著者]M. Navaneethan,S. Ponnusamy,C. Muthamizhchelvan,Y. Shimura,Y. Hayakawa [Notes] IF=2.446 (2018.3調査)
[22]. Local arrangement of substitutional C atoms and the thermal stability of epitaxial Si:C(P) grown by CVD
ECS Journal of Solid State Science and Technology 6/ 755- 759 (2017) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Sathish kumar Dhayalan [共著者]Thomas Nuytten,Roger Loo,Erik Rossee,Andriy Hikavyy,Yosuke Shimura [Notes] (accepted in Nov..) IF=1.797(2016)
[23]. Synthesis of super-paramagnetic iron oxide nanoparticles assisted by brown seaweed Turbinaria decurrens for removal of reactive navy blue dye
Materials Research Express 4/ 105038- (2017) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Mohamed Mathar Sahib Ibrahim Khaleelullah [共著者]Muralidharan Murugand,Radha K.V,Devasena Thiyagarajan,Yosuke Shimura,Yasuhiro Hayakawa [Notes] (accepted in Oct.) IF=1.068(2017.10調査)
[24]. Magnetic anomalies in Fe-doped NiO nanoparticle
Materials Research Express 4/ 096103-1-096103-9 (2017) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Pradeep Raja [共著者]Ashish Chhaganlal Gandhi,Tejabhiram Y,Mohamed Mathar Sahib I.K.,Yosuke Shimura,Yasuhiro Hayakawa [Notes] (accepted in July 2017) IF=1.068 (2017.9調査)
[25]. Fabrication of high quality, thin Ge-on-insulator layers by direct wafer-bonding for nanostructured thermoelectric devices
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 32/ 035021-1-035021-10 (2016) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Manimuthu Veerappan [共著者]Arivanandhan Mukannan,Faiz Salleh,Yosuke Shimura,Yasuhiro Hayakawa,Hiroya Ikeda
[26]. Thermal stability and relaxation mechanisms in compressively strained Ge0.94Sn0.06 thin films grown by molecular beam epitaxy
J. Appl. Phys 120/ 085309-1-085309-11 (2016) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Claudia Fleischmann [共著者]Ruben R. Lieten,Peter Hermann,Philipp Honicke,Burkhard Beckhoff,Yosuke Shimura [Notes] IF: 2.101 (2016.9調査)
[27]. UV-visible and near-infrared active NaGdF4:Yb:Er/Ag/TiO2 nanocomposite for enhanced photocatalytic application
RSC Advances 6/ 80655-80665 (2016) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Natarajan Prakash [共著者]Dheivasigamani Thangaraju,Rajan Karthikeyan,Mukannan Arivanandhan,Yosuke Shimura,Yasuhiro Hayakawa [Notes] IF: 3.289 (2016.9調査)
[28]. Solid phase crystallization of SiSnC ternary alloy layers and characterization of its crystalline and optical properties
Jpn. J. Appl. Phys. (vol)/(num) (xxx) - (zzz) (2016) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Shota Yano [共著者]Takashi Yamaha,Yosuke Shimura,Wakana Takeuchi,Mitsuo Sakashita,Masashi Kurosawa [Notes] (accepted) IF: 1.122 (2016.9調査)
[29]. Formation and Characterization of Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-Heterostructure with Strain controlled Ge1-x-ySixSny Layer
Mater. Sci. Semicond. Process. 70/1 156-161 (2016) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Masahiro Fukuda [共著者]Takashi Yamaha,Takanori Asano,Syunsuke Fujinami,Yosuke Shimura,Masashi Kurosawa [Notes] IF: 2.359 (2016.9調査)
[30]. EXAFS study of local structure contributing to Sn stability in SiyGe1-y-zSnz
Mater. Sci. Semicond. Process. 32/1 133-138 (2016) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] author
[Author] [責任著者]Yosuke Shimura [共著者]Takanori Asano,Takashi Yamaha,Masahiro Fukuda,Wakana Takeuchi,Osamu Nakatsuka [Notes] IF: 2.359 (2017.9調査)
[31]. Density and capture cross sections of interface traps in GeSnO2 and GeO2 grown on hetero-epitaxial GeSn
ACS Applied Materials & Interfaces 8/ 13181-18186 (2016) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Somya Gupta [共著者]Eddy Simoen,Roger Loo,Dennis Lin,Clement Merckling,Yosuke Shimura [Notes] IF: 7.145 (2016.9調査)
[32].
116/ 23-26 (2016) [Refereed] non-refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] author
[Author] [責任著者]志村 洋介 [共著者]竹内和歌奈,坂下満男,黒澤昌志,中塚理,財満鎭明
[33]. Effect of in situ Sb doping on crystalline and electrical characteristics of n-tyep Ge1-xSnx epitaxial layer
Jpn. J. Appl. Phys. 55 04EB13-1-04EB13-5 (2016) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Jihee Jeon [共著者]Takanori Asano,Yosuke Shimura,Wakana Takeuchi,Masashi Kurosawa,Mitsuo Sakashita [Notes] IF: 1.127 (2016.3調査)
[34]. Design requirements for group-IV laser based on fully strained Ge1-xSnx embedded in partially relaxed Si1-y-zGeySnz buffer layers
ECS-J SSST 5 Q140-Q143 (2016) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] author
[Author] [責任著者]Yosuke Shimura [共著者]Ashwyn Srinivasan,Roger Loo
[35]. Silicon-based photonic integrated circuits for the mid-infrared
Procedia Engineering 140 144-151 (2016) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Aditya Malik [共著者]Muhammad Muneeb,Sanja Radosavljevic,Milos Nedeljkovic,Jordi Soler Penades,Goran Mashanovich
[36]. Influence of Precursor Gas on SiGe Epitaxial Material Quality in Terms of Structural and Electrical Defects
Jpn. J. Appl. Phys. 55 04EJ11-1-04EJ11-5 (2016) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Shinichi Ike [共著者]E. Simoen,Y. Shimura,A. Hikavyy,W. Vandervorst,R. Loo [Notes] IF: 1.127 (2016.3調査)
[37]. On the manifestation of Phosporus-vacancy complexes in epitaxial Si:P films
Appl. Phys. Lett. 108 082106-1-082106-4 (2016) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Sathish Kumar Dhayalan [共著者]Jiri Kujala,Jonatan Slotte,Geoffrey Pourtois,Eddy Simoen,Erik Rosseel [Notes] IF: 3.302 (2016.3調査)
[38]. Defect and dislocation structures in low-temperature-grown Ge and Ge1-xSnx epitaxial layers on Si(110) substrates
Thin Solid Films 598 72-81 (2015) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]S. Kidowaki [共著者]T. Asano,Y. Shimura,M. Kurosawa,N. Taoka,O. Nakatsuka [Notes] IF: 1.759 (2016.3調査)
[39]. Amorphous inclusions during Ge and Ge1-xSnx epitaxial growth via chemical vapor deposition
Thin Solid Films 590 163-169 (2015) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Federica Gencarelli [共著者]Yosuke Shimura,A. Kumar,B. Vincent,A. Moussa,D. Vanhaeren [Notes] IF: 1.759 (2016.3調査)
[40]. Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence
Thin Solid Films 602 56-59 (2015) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] author
[Author] [責任著者]Yosuke Shimura [共著者]Ashwyn Srinivasan,Dries Van Thourhout,Rik Van Deun,Marianna Pantouvaki,Joris Van Campenhout [Notes] IF: 1.759 (2016.3調査)
[41]. On the interplay between relaxation, defect formation, and atomic Sn distribution in Ge1-xSnx unraveled with atom probe tomography
J. Appl. Phys. 118 025302-1-025302-8 (2015) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Arul Kumar [共著者]J. Demeulemeester,J. Bogdanowicz,J. Bran,D. Melkonyan,C. Fleischmann [Notes] IF: 2.183 (2016.3調査)
[42]. Extended X-Ray Absorption Fine Structure investigation of Sn local environment in strained and relaxed CVD grown epitaxial Ge1-xSnx films
J. Appl. Phys 117 095702-1-095702-11 (2015) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Federica Gencarelli [共著者]Didier Grandjean,Yosuke Shimura,Benjamin Vincent,Dipanjan Banerjee,Andre Vantomme [Notes] IF: 2.183 (2016.3調査)
[43]. Ge-on-Si and Ge-on-SOI thermo-optic phase shifters for the mid-infrared
Opt. Exp. 22 28479-28488 (2014) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Aditya Malik [共著者]Sarvagya Dwivedi,Liesbet Van Landschoot,Muhammad Muneeb,Yosuke Shimura,Guy Lepage [Notes] IF: 3.488 (2016.3調査)
[44]. Structural and optical properties of amorphous and crystalline GeSn layers on Si
ECS-J SSST 3 403-408 (2014) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] Ruben Lieten,Claudia Fleischmann,Sven Peters,Nuno Santos,Ligia Amorim
[45]. Ge1-xSnx Optical Devices: Growth and Applications
ECS Trans 64 677-687 (2014) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] author
[Author] [責任著者]Yosuke Shimura [共著者]Wei Wang,Wilfried Vandervorst,Federica Gencarelli,Alban Gassenq,Gunther Roelkens
[46]. Positron Annihilation Spectroscopy on Open-Volume Defects in Group IV Semiconductors
ECS Trans 64 241-253 (2014) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]J. Slotte [共著者]F. Tuomisto,J. Kujala,A. M. Holm,N. Segercrantz,S. Kilpelainen
[47]. Material Studies on Si:C Epitaxial Films Grown by CVD
ECS Trans. 64 997-1005 (2014) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]SathishKumar Dhayalan [共著者]Roger Loo,Erik Rosseel,Andriy Yakovitch Hikavyy,Yosuke Shimura
[48]. Silicon-Based Photonic Integration Beyond the Telecommunication Wavelength Range
IEEE J. Sel. Top. Quantum Electron. 20 8201511-1-8201511-11 (2014) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Gunther Roelkens [共著者]Ustav D. Dave,Alban Gassenq,Nannicha Hattasan,Chen Hu,Bart Kuyken [Notes] IF: 2.828 (2016.3調査)
[49]. Band alignment at interfaces of amorphous Al2O3 with Ge1-xSnx and strained Ge based channels
Appl. Phys. Lett 104 202107-1-202107-5 (2014) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]H. Y. Chou [共著者]V. V. Afanas'ev,M. Houssa,A. Stesmans,B. Vincent,F. Gencarelli [Notes] IF: 3.302 (2016.3調査)
[50]. Germanium-on-silicon planar concave grating wavelength (de)multiplexers in the mid-infrared
Appl. Phys. Lett. 103 161119-1-161119-4 (2013) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Aditya Malik [共著者]Muhammad Muneeb,Yosuke Shimura,Joris Van Campenhout,Roger Loo,Gunther Roelkens [Notes] IF: 3.302 (2016.3調査)
[51]. Silicon-based heterogeneous photonic integrated circuits for the mid-infrared
Optical Material express 3 1523-1536 (2013) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Gunther Roelkens [共著者]Ustav Dave,Alban Gassenq,Nannicha Hattasan,Chen Hu,Bart Kuyken [Notes] IF: 2.844 (2016.3調査)
[52]. Germanium-onSilicon Mid-Infrared Arrayed Waveguide Grating
IEEE Photonics Technol. Lett 25/ 1805-1808 (2013) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Aditya Malik [共著者]Muhammad Muneeb,Shibnath Pathak,Yosuke Shimura,Joris Van Campenhout,Roger Loo [Notes] IF: 2.11 (2016.4調査)
[53]. Epitaxial growth and anisotropic strain relaxation of Ge1-xSnx layers on Ge(110) substrates
Solid State Electron 83 71-75 (2013) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Takanori Asano [共著者]Yosuke Shimura,Noriyuki Taoka,Osamu Nakatsuka,Shigeaki Zaima [Notes] IF: 1.504 (2016.3調査)
[54]. Development of epitaxial growth technology for Ge1-xSnx alloy and study of its properties for Ge nanoelectronics
Solid State Electron 83 82-86 (2013) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Osamu Nakatsuka [共著者]Yosuke Shimura,Wakana Takeuchi,Noriyuki Taoka,Shigeaki Zaima [Notes] IF: 1.504 (2016.3調査)
[55]. Influence of Sn incorporation and growth temperature on crystallinity of Ge1-xSnx layers heteroepitaxially grown on Ge(110) substrates
Thin Solid Films 531 504-508 (2013) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Takanori Asano [共著者]Yosuke Shimura,Osamu Nakatsuka,Shigeaki Zaima [Notes] IF: 1.759 (2016.3調査)
[56]. Ge1-xSnx/Ge heterostructure short-wave infrared photodetectors on silicon
Optical Express 20 27297-27303 (2012) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Alban Gassenq [共著者]Federica Gencarelli,Joris Van Campenhout,Yosuke Shimura,Roger Loo,G. Narcy [Notes] IF: 3.488 (2016.3調査)
[57]. Effect of atomic deuterium irradiation on initial growth of Sn and Ge1-xSnx on Ge(001) substrates
Appl. Sur. Sci 259 754-757 (2012) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Tatsuya Shinoda [共著者]Osamu Nakatsuka,Yosuke Shimura,Shotaro Takeuchi,Shigeaki Zaima [Notes] IF: 2.711 (2016.3調査)
[58]. Crystallinity Improvement of Epitaxial Ge Grown on a Ge(110) Substrate by Incorporation of Sn
Appl. Phys. Exp 5 015501-1-015501-3 (2012) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] author
[Author] [責任著者]Yosuke Shimura [共著者]Takanori Asano,Osamu Nakatsuka,Shigeaki Zaima [Notes] IF: 2.365 (2016.3調査)
[59]. Sn diffusion during Ni germanide growth on Ge1-xSnx,
Appl. Phys. Lett 99 211905-1-211905-3 (2011) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Jelle Demeulemeester [共著者]Annelore Schrauwen,Osamu Nakatsuka,Shigeaki Zaima,Masaki Adachi,Yosuke Shimura [Notes] IF: 3.302 (2016.3調査)
[60]. Growth of Ge1-xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates
Thin Solid films 520 3201-3205 (2011) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Marika Nakamura [共著者]Yosuke Shimura,Shotaro Takeuchi,Osamu Nakatsuka,Shigeaki Zaima [Notes] IF: 1.759 (2016.3調査)
[61]. Low temperature formation of Si1-x-yGexSny-on-insulator structures by using solid-phase mixing of Ge1-xSnz/Si-on-insulator substrates
Thin Solid films 520 3288-3292 (2011) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Osamu Nakatsuka [共著者]Kenta Mochizuki,Yosuke Shimura,Takashi Yamaha,Shigeaki Zaima [Notes] IF: 1.759 (2016.3調査)
[62]. In-situ Ga Doping of Fully Strained Ge1-xSnx Heteroepitaxial Layers Grown on Ge(001) Substrates
Thin Solid Films 520 3206-3210 (2011) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] author
[Author] [責任著者]Yosuke Shimura [共著者]Shotaro Takeuchi,Osamu Nakatsuka,Benjamin Vincent,Federica Gencarelli,Trudo Clarysee [Notes] IF: 1.759 (2016.3調査)
[63]. GeSn Technology: Impact of Sn on Ge CMOS Applications
ECS Trans 41 231-238 (2011) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Shigeaki Zaima [共著者]Osamu Nakatsuka,Yosuke Shimura,Masaki Adachi,Marika Nakamura,Shotaro Takeuchi
[64]. Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer
Appl. Phys. Lett 98 192110-1-192110-3 (2011) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Clement Merckling [共著者]Xiao Sun,Yosuke Shimura,Alexis Franquet,Benjamin Vincent,Shotaro Takeuchi [Notes] IF: 3.302 (2016.3調査)
[65]. Formation of Ni(Ge1-xSnx) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Solid State Electron 60 46-52 (2011) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Tsuyoshi Nishimura [共著者]Osamu Nakatsuka,Yosuke Shimura,Shotaro Takeuchi,Benjamin Vincent,Andre Vantomme [Notes] IF: 1.504 (2016.3調査)
[66]. Ge1-xSnx stressors for strained-Ge CMOS
Solid State Electron 60 53-57 (2011) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Shotaro Takeuchi [共著者]Yosuke Shimura,Tsuyoshi Nishimura,Benjamin Vincent,Geert Eneman,Trudo Clarysse [Notes] IF: 1.504 (2016.3調査)
[67]. High-density formation of Ge quantum dots on SiO2
Solid State Electron 60 65-69 (2011) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Katsunori Makihara [共著者]Mitsuhisa Ikeda,Akio Ohta,Shotaro Takeuchi,Yosuke Shimura,Shigeaki Zaima [Notes] IF: 1.504 (2016.3調査)
[68]. Control of strain relaxation behavior of Ge1-xSnx buffer layers
Solid State Electron 60 84-88 (2011) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] author
[Author] [責任著者]Yosuke Shimura [共著者]Shotaro Takeuchi,Osamu Nakatsuka,Akira Sakai,Shigeaki Zaima [Notes] IF: 1.504 (2016.3調査)
[69]. Control of Strain Relaxation Behavior of Ge1-xSnx Layers for Tensile Strained Ge Layers
ECS Trans 33 205-210 (2010) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] author
[Author] [責任著者]Yosuke Shimura [共著者]Shotaro Takeuchi,Osamu Nakatsuka,Shigeaki Zaima
[70]. Assessment of Ge1-xSnx Alloys for Strained Ge CMOS Devices
ECS Trans 33 529-535 (2010) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Shotaro Takeuchi [共著者]Yosuke Shimura,Tsuyoshi Nishimura,Benjamin Vincent,Geert Eneman,Trudo Clarysse
[71]. Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
Microelectronic Engineering 88 342-346 (2010) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Benjamin Vincent [共著者]Yosuke Shimura,Shotaro Takeuchi,Tsuyoshi Nishimura,Geert Eneman,Andrea Firrincieli [Notes] IF: 1.197 (2016.3調査)
[72]. Mobility Behavior of Ge1-xSnx Layers Grown on Silicon-on-Insulator Substrates
Jpn. J. Appl. Phys 49 04DA10-1-04DA10-4 (2009) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Osamu Nakatsuka [共著者]Norimasa Tsutsui,Yosuke Shimura,Shotaro Takeuchi,Akira Sakai,Shigeaki Zaima [Notes] IF: 1.127 (2016.3調査)
[73]. Low temperature growth of Ge1-xSnx buffer layers for tensile-strained Ge layers
Thin Solid Films 518 S2-S5 (2009) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] author
[Author] [責任著者]Yosuke Shimura [共著者]Norimasa Tsutsui,Osamu Nakatsuka,Akira Sakai,Shigeaki Zaima [Notes] IF: 1.759 (2016.3調査)
[74]. Control of Dislocations and Sn precipitations for Fabrication of Tensile-strained Ge on Ge1-xSnx Buffer Layer
Trans. MRS-J 34 301-304 (2009) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] author
[Author] [責任著者]Yosuke Shimura [共著者]Norimasa Tsutsui,Osamu Nakatsuka,Akira Sakai,Shigeaki Zaima
[75]. Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnx Buffer Layers for Tensile Strained Ge Layers
Jpn. J. Appl. Phys. 48 04C130-1-04C130-4 (2009) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] author
[Author] [責任著者]Yosuke Shimura [共著者]Norimasa Tsutsui,Osamu Nakatsuka,Akira Sakai,Shigeaki Zaima [Notes] IF: 1.127 (2016.3調査)
[76]. Interface and Defect Control for Group IV Channel Engineering
ECS Trans. 16 687-698 (2008) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Akira Sakai [共著者]Yuji Ohara,Takaya Ueda,Eiji Toyoda,Koji Izunome,Shotaro Takeuchi
[77]. Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method
Appl. Phys. Lett. 92 231916-1-231916-3 (2008) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] [責任著者]Shotaro Takeuchi [共著者]Yosuke Shimura,Osamu Nakatsuka,Shigeaki Zaima,Masaki Ogawa,Akira Sakai [Notes] IF: 3.302 (2016.3調査)