[1]. Drag of electron–hole bilayer in silicon-on-insulator metal-oxide-semiconductor field-effect transistor at low temperature
Applied Physics Express 17/ 064003_1-5 (2024) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] N. Ahmed, M. Razanoelina, M. Hori, A. Fujiwara, Y. Ono [DOI]
[2]. Electrical control of transient formation of electron-hole coexisting system at silicon metal-oxide-semiconductor interfaces
Communications Physics 6/1 1-11 316 (2023) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] author
[Author] Masahiro Hori, Jinya Kume, Manjakavahoaka Razanoelina, Hiroyuki Kageshima, Yukinori Ono [DOI]
[3]. Highly stable Fe/CeO2 catalyst for the reverse water gas shift reaction in the presence of H2S
RSC Advances 13/ 11525-11529 (2023) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] R. Watanabe, F. Karasawa, C. Yokoyama, K. Oshima, M. Kishida, M. Hori, Y. Ono, S. Satokawa, P. Verma, C. Fukuhara [DOI]
[4]. Magnetometry of neurons using a superconducting qubit
Communications Physics 6/1 1-6 19 (2023) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] Hiraku Toida, Koji Sakai, Tetsuhiko F. Teshima, Masahiro Hori, Kosuke Kakuyanagi, Imran Mahboob, Yukinori Ono & Shiro Saito [DOI]
[5]. Critical conductance of two-dimensional electron gas in silicon-on-insulator metal-oxide-semiconductor field-effect transistor
Applied Physics Express 14/10 104003_1-4 (2021) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] M. Razanoelina, M. Hori, A. Fujiwara, Y. Ono [DOI]
[6]. Detection of arsenic donor electrons using gate-pulse-induced spin-dependent recombination in silicon transistors
Applied Physics Letters 118/26 263504_1-6 (2021) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] author
[Author] M. Hori, Y. Ono [Notes] Editor's pickに選定
[DOI]
[7]. Coulomb-blockade transport in selectively-doped Si nano-transistors
Applied Physics Express 12/8 085004_1-5 (2019) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] A. Afiff, A.Samanta, A. Udhiarto, H. Sudibyo, M. Hori, Y. Ono, M. Tabe, D. Moraru [DOI]
[8]. Charge pumping under spin resonance in Si(100) metal-oxide-semiconductor transistors
Physical Review Applied 11/6 064064_1-12 (2019) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] author
[Author] M. Hori, Y. Ono [DOI]
[9]. Single-charge band-to-band tunneling via multiple-dopant clusters in nanoscale Si Esaki diodes
Applied Physics Letters 114/24 243502_1-5 (2019) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] G. Prabhudesai, M. Mauruganathan, L.T. Anh, H. Mizuta, M. Hori, Y. Ono, M. Tabe, D. Moraru [DOI]
[10]. Electron aspirator using electron-electron scattering in nanoscale silicon
Nature Communications 9/ 4813_1-8 (2018) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] H.Firdaus, T.Watanabe, M.Hori,D.Moraru, Y.Takahashi, A.Fujiwara, Y.Ono [DOI]
[11]. Detection of single holes generated by impact ionization in silicon
Applied Physics Letters 113/16 163103_1-6 (2018) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] H.Firdaus, T.Watanabe, M.Hori, D.Moraru, Y.Takahashi, A. Fujiwara, and Y.Ono [DOI]
[12]. Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors
Applied Physics Letters 110/9 093107_1-093107_5 (2017) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] A. Samanta, M. Muruganathan, M. Hori, Y. Ono, H. Mizuta, M. Tabe, D. Moraru [DOI]
[13]. Improvement of charge-pumping electrically detected magnetic resonance and its application to silicon metal-oxide-semiconductor field-effect transistor
Applied Physics Express 10/1 015701_1-015701_4 (2017) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] author
[Author] M. Hori, T. Tsuchiya,Y. Ono [DOI]
[14]. Time-domain charge pumping on silicon-on-insulator MOS devices
Jpn. J. Appl. Phys 56/1 011303_1 - 011303_5 (2017) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] T. Watanabe, M. Hori, T. Tsuchiya, A. Fujiwara, Y. Ono [DOI]
[15]. Band transport across a chain of dopant sites in silicon over micron distances and high temperatures
Scientific Reports 6/ 19704_1-8 (2016) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] E. Prati, K. Kumagai, M. Hori, T. Shinada [DOI]
[16]. Evaluation of accuracy of charge pumping current in time domain
IEICE Trans. Electron. E98-C/5 390-394 (2015) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] T. Watanabe, M. Hori, T. Saruwatari, T. Tsuchiya, Y. Ono [DOI]
[17]. Electrical activation and electron spin resonance measurements of arsenic implanted in silicon
Applied Physics Letters 106/14 142105_1-4 (2015) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] author
[Author] M. Hori, M. Uematsu, A. Fujiwara, Y. Ono [DOI]
[18]. Direct observation of electron emission and recombination processes by time domain measurements of charge pumping current
Applied Physics Letterers 106/4 041603_1-4 (2015) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] author
[Author] M. Hori, T. Watanabe, T. Tsuchiya, Y. Ono [DOI]
[19]. Analysis of electron capture process in charge pumping sequence using time domain measurements
Applied Physics Letters 105/26 261602_1-4 (2014) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] author
[Author] M. Hori, T. Watanabe, T. Tsuchiya, Y. Ono [DOI]
[20]. Electron spin resonance study on pure single crystalline sapphire
Phys. Status Solidi C 10/12 1681-1683 (2013) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] author
[Author] M. Hori, N. Fukumoto,Y. Ono, R. Chikaoka, S. Moriwaki [DOI]
[21]. Anderson-Mott transition in arrays of a few dopant atoms in a silicon transistor
Nature Nanotechnology 7/7 443-447 (2012) [Refereed] refereed [Internationally co-authored papers] internationally co-authored paper
[Lead author or co-author] co-author
[Author] E. Prati, M. Hori, F. Guagliardo, G. Ferrari, T. Shinada [DOI]
[22]. Reduction of threshold voltage fluctuation in field-effect transistors by controlling individual dopant position
Applied Physics Letters 101/1 013503_1-3 (2012) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] author
[Author] M. Hori, K. Taira, A. Komatsubara, K. Kumagai, Y. Ono, T. Tanii, T. Endoh, T. Shinada [DOI]
[23]. Impact of a few dopant positions controlled by deterministic single-ion doping on the transconductance of field-effect transistors
Applied Physics Letters 99/6 062103_1-3 (2011) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] author
[Author] M. Hori, T. Shinada, Y. Ono, A. Komatsubara, K. Kumagai, T. Tanii, T. Endoh, I. Ohdomari [DOI]
[24]. Enhancing Single-Ion Detection Efficiency by Applying Substrate Bias Voltage for Deterministic Single-Ion Doping
Applied Physics Express 4/4 046501_1-046501_2 (2011) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] author
[Author] M. Hori, T. Shinada, K. Taira, A. Komatsubara, Y. Ono, T. Tanii, T. Endoh, I. Ohdomari [DOI]
[25]. Performance enhancement of semiconductor devices by control of discrete dopant distribution
Nanotechnology 20/36 365205_1-365205_5 (2009) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] author
[Author] M. Hori, T. Shinada, K. Taira, N. Shimamoto, T. Tanii, T. Endoh, I. Ohdomari [DOI]
[26]. A reliable method for the counting and control of single ions for single-dopant controlled devices
Nanotechnology 19/34 345202_1-345202_4 (2008) [Refereed] refereed [Internationally co-authored papers] non-internationally co-authored paper
[Lead author or co-author] co-author
[Author] T. Shinada, T. Kurosawa, H. Nakayama, Y. Zhu, M. Hori, I. Ohdomari [DOI] |