静岡大学：教員データベース - MORARU DANIEL （MORARU DANIEL）

静岡大学教員データベース - 教員個別情報 : MORARU DANIEL （MORARU DANIEL）

学会発表・研究発表

【学会発表・研究発表】
[1]. Study of organic and hybrid electronics based on solution-based deposition ISFAR-SU2024 （2024年3月6日）招待講演以外 [発表者]Daris Alfafa, Arief Udhiarto, Daniel Moraru [URL] [備考] Shizuoka University [2]. Analysis of light-induced current noise in codoped silicon nano-transistors ISFAR-SU2024 （2024年3月6日）招待講演以外 [発表者]Shogo Miyagawa, Pooja Sudha, Arup Samanta, Daniel Moraru [URL] [備考] Shizuoka University [3]. Study of metal-nanofilm coating of Kelvin force microscope cantilevers for measurements of potential in nanodevices ISFAR-SU2024 （2024年3月6日）招待講演以外 [発表者]Takuya Suzuki, Hayato Kawanishi, Daris Alfafa, Daniel Moraru [URL] [備考] Shizuoka University [4]. Quantum Tunneling Functionalities based on Silicon Nanomaterials and Nanodevices International Conference on Advanced Functional Materials and Devices (ADMD-2024) （2024年2月29日）招待講演 [発表者]Daniel Moraru [URL] [備考] SRM Institute of Science and Technology [5]. Study of codoped silicon-on-insulator thin films for nano-transistor functionality 25th Takayanagi Kenjiro Memorial Symposium （2023年11月28日）招待講演以外 [発表者]R. Asai, S. Masui, S. Miyagawa, D. Alfafa, and D. Moraru [URL] [備考] Poster [6]. Study of the effects of the codoped region in silicon-on-insulator nanoscale pn diodes 25th Takayanagi Kenjiro Memorial Symposium （2023年11月28日）招待講演以外 [発表者]S. Masui, R. Asai, B. A. Rianto, Y. Sasaki, and D. Moraru [URL] [備考] Poster [7]. Single-electron tunneling via random dopants in silicon nanodevices 6th Autumn School on Physics of Advanced Materials (PAMS-6) （2023年10月20日）招待講演 [発表者]D. Moraru [URL] [備考] Sharm El-Sheikh, Egypt & online [8]. A proposal for silicon-based ultra-sensitive THz detector 15th International Conference on Physics of Advanced Materials (ICPAM-15) （2023年10月20日）招待講演以外 [発表者]P. Sudha, D. Moraru, and A. Samanta [URL] [備考] Sharm El-Sheikh, Egypt & online (oral presentation) [9]. From silicon nanodevices to silicon/carbon-nanotube hybrid nanodevices: a comparative analysis 15th International Conference on Physics of Advanced Materials (ICPAM-15) （2023年10月20日）招待講演 [発表者]D. Moraru, H. Kawanishi, D. Alfafa, M. Shimomura, and A. Udhiarto [URL] [備考] Sharm El-Sheikh, Egypt & online Plenary Talk [10]. Comparative evaluation of electrical properties of carbon nanotube networks deposited on CMOS-compatibel platform 20th International Conference on Global Research and Education (Inter-Academia) （2023年9月27日）招待講演以外 [発表者]H. Kawanishi, R. S. Singh, V. N. Ramakrishnan, M. Shimomura, and D. Moraru [URL] [備考] Best Poster Presentation Student Award at the Inter-Academia Conference – H. Kawanishi [11]. Analysis of the resistance of silicon nanoscale structures highly doped in different configurations 20th International Conference on Global Research and Education (Inter-Academia) （2023年9月27日）招待講演以外 [発表者]S. Miura, R. Asai, Y. Sasaki, and D. Moraru [URL] [備考] Poster [12]. Fabrication and characterization of silicon tunnel diodes doped by short-time rapid thermal annealing 20th International Conference on Global Research and Education (Inter-Academia) （2023年9月27日）招待講演以外 [発表者]Y. Sasaki, S. Masui, S. Miura, and D. Moraru [URL] [備考] Poster [13]. Challenges and Progress in the Fabrication of Silicon Nanowire Tunnel Diodes 5th International Conference on Nano Electronics Research and Education (ICNERE) （2023年7月31日）招待講演 [発表者]D. Moraru [URL] [備考] Invited Talk at ICNERE 2023 (Labuan Bajo, Indonesia) [14]. Modification and ablation of thin silicon-on-insulator films by fs-laser IEEE Silicon Nanoelectronics Workshop （2023年6月11日）招待講演以外 [発表者]D. Moraru, T. Kaneko, D. Smith, T. Katkus, S. H. Ng, and S. Juodkazis [URL] [備考] Rihga Royal Hotel, Kyoto, IEEE/JSAP Societies [15]. Inkjet-printed carbon nanotubes on silicon nano-gaps: an analysis of electrical characteristics 7th International Conference on Nanoscience and Nanotechnology (ICONN 2023) （2023年3月28日）招待講演以外 [発表者]Rohit S. Singh, H. Kawanishi, T. Kaneko, K. Takagi, T. Aoki, Y. Neo, H. Mimura, M. Shimomura, and D. Moraru [備考] Oral presentation (virtual) SRM Institute of Science and Technology (Chennai, INDIA) [16]. Single-electron tunneling through dopants in thin-Si devices MCN Nanofabulous Seminar （2023年3月2日）招待講演以外 [発表者]D. Moraru [備考] Melbourne Centre for Nanofabrication (MCN) [17]. Study of current paths through carbon nanotube bundles deposited by inkjet printing The 24th Takayanagi Kenjiro Memorial Symposium （2022年11月29日）招待講演以外 [発表者]R. S. Singh, K. Takagi, T. Aoki, J. Moon, Y. Neo, H. Mimura, and D. Moraru [備考] Poster [18]. Design and Optimization of Vertical GaN based Power MOSFETs for Converter Applications The 24th Takayanagi Kenjiro Memorial Symposium （2022年11月29日）招待講演以外 [発表者]Ramakrishnan V N, Reena D, Nilesh Kumar, Nithish Kumar V, D Moraru [備考] Poster [19]. Fabrication of carbon nanotube transistor by inkjet printing The 7th International Symposium on Biomedical Engineering (ISBE2022) （2022年11月25日）招待講演以外 [発表者]R. S. Singh, K. Takagi, T. Aoki, J. Moon, Y. Neo, H. Mimura, and D. Moraru [備考] Online, poster [20]. Analog/RF performance analysis of GaSb-InP vertical Tunnel Field Effect Transistors 13th Annual ISAJ Symposium2022 （2022年11月18日）招待講演以外 [発表者]Ramakrishnan V N, Ramkumar K, D. Moraru [備考] Embassy of India Poster [21]. Siナノエサキダイオードの空乏層におけるエネルギー準位を介したトンネル電流の研究第83回応用物理学会秋季学術講演会（2022年9月22日）招待講演以外 [発表者]田村悠太,モラル・ダニエル [備考] 開催場所：東北大学主催団体：応用物理学会 [22]. 共ドープSiナノトランジスタの単一電子トンネリングに対するバックゲート電圧の影響第83回応用物理学会秋季学術講演会（2022年9月22日）招待講演以外 [発表者]金子義,ジュパリ・タルナ・テジャ,モラル・ダニエル [備考] 開催場所：東北大学主催団体：応用物理学会 [23]. Single-charge tunneling functionalities in co-doped silicon nanostructures for dopant-based electronics 14th International Conference on Physics of Advanced Materials (ICPAM-14) （2022年9月11日）招待講演 [発表者]D. Moraru [備考] Dubrovnik, Croatia - Virtual [24]. Fabrication and characterization of inkjet-printed carbon nanotube-based transistor 14th International Conference on Physics of Advanced Materials (PAMS-5) （2022年9月）招待講演以外 [発表者]Rohitkumar S. Singh, K. Takagi, T. Aoki, J. Moon, Y. Neo, H. Mimura, and D. Moraru [備考] Dubrovnik, Croatia - Virtual Poster [25]. Deposition and manipulation of carbon nanotube bundles on a CMOS-compatible platform 14th International Conference on Physics of Advanced Materials (ICPAM-14) （2022年9月）招待講演以外 [発表者]R. S. Singh, K. Takagi, T. Aoki, J. Moon, Y. Neo, F. Iwata, H. Mimura, and D. Moraru [備考] Dubrovnik, Croatia - Virtual Best oral presentation given by a young scientist [26]. Transport of electrons one by one through dopants in thin-Si devices The 29th International Conference on Amorphous and Nano-crystalline Semiconductors (ICANS29) （2022年8月25日）招待講演 [発表者]Daniel Moraru [備考] Nanjing University, Nanjing, CHINA (Online) [27]. Towards Practical Implementation of Single-Electron Tunneling via Donor-Induced Quantum Dots in Silicon Nanodevices Physics and Its Applications （2022年7月21日）招待講演 [発表者]D. Moraru [備考] San Francisco, Online [28]. Single-electron tunneling through multiple-donor QDs in high-concentration co-doped Si nanoscale transistors シリコン材料・デバイス研究会（SDM）/電子デバイス研究会（ED）（2022年5月27日）招待講演以外 [発表者]T. T. Jupalli, T. Kaneko, C. Pandy, and D. Moraru [備考] 電子情報通信学会オンライン開催 [29]. 高濃度共ドープしたSiナノトランジスタの単一電子トンネリング評価 The 69th JSAP Spring Meeting 2022 （2022年3月23日）招待講演以外 [発表者]金子義，タルナ・テジャ・ジュパリ, 三浦舜平, 山口謙祐, モラル・ダニエル [備考] Sagamihara Campus Aoyama Gakuin University, Online, Oral presentation [30]. Study of single-electron tunneling in Si nano-transistors in different doping concentration regimes for room-temperature operation The 69th JSAP Spring Meeting 2022 （2022年3月23日）招待講演以外 [発表者]T. T. Jupalli, A. Debnath, Y. Ono, and D. Moraru [備考] Sagamihara Campus Aoyama Gakuin University, Online, Oral presentation [31]. Theoretical analysis on the effect of coupling between dopants and leads in Si nanodiodes for band-to-band tunneling enhancement The 69th JSAP Spring Meeting 2022 （2022年3月23日）招待講演以外 [発表者]C. Pandy, K. Yamaguchi, Y. Neo, H. Mimura, and D. Moraru [備考] Sagamihara Campus Aoyama Gakuin University, Online, Oral presentation [32]. Inkjet printing of carbon nanotube array at low density for CMOS-compatible fabrication of nanoscale transistors The 69th JSAP Spring Meeting 2022 （2022年3月22日）招待講演以外 [発表者]Rohitkumar S. Singh, K. Takagi, T. Aoki, J. Moon, Y. Neo, D. Moraru, and H. Mimura [備考] The 69th JSAP Spring Meeting 2022, Poster presentation [33]. Study of single-electron tunneling transport in high-concentration co-doped SOI-FETs The 8th International Symposium toward the Future of Advanced Researches in Shizuoka University (ISFAR-SU 2022 ) （2022年3月1日）招待講演以外 [発表者]T. Teja. Jupalli, T. Kaneko, S. Miura, C. Pandy, D. Moraru [備考] Shizuoka University, Zoom distribution [34]. Study of deposition and manipulation of carbon-nanotube arrays at low density The 8th International Symposium toward the Future of Advanced Researches in Shizuoka University (ISFAR-SU 2022 ) （2022年3月1日）招待講演以外 [発表者]R. Singh, K. Takahashi, K. Takagi, T. Aoki, J. H. Moon, Y. Neo, F. Iwata, D. Moraru, H. Mimura [備考] Shizuoka University, Zoom distribution [35]. Theoretical study of the impact of a front-end dopant pair on tunneling current in Si nanodiodes The 8th International Symposium toward the Future of Advanced Researches in Shizuoka University (ISFAR-SU 2022 ) （2022年3月1日）招待講演以外 [発表者]C. Pandy, K. Yamaguchi, Y. Neo, H. Mimura, D. Moraru [備考] Shizuoka University, Zoom distribution [36]. Probing of deep states by band-to-band tunneling in nanoscale silicon-on-insulator Esaki diodes The 19th International Conference on Global Research and Education in Engineering for Sustainable Future (Inter-Academia 2021) （2021年10月21日）招待講演以外 [発表者]D. Moraru, Y. Tamura, Y. Iwatsuki, K. Yamaguchi [備考] Francisk Skorina Gomel State University, Gomel, BELARUS (Virtual conference) [37]. First-principles study of bandgap electronic states under electric field in silicon nanowires with discrete dopants The 19th International Conference on Global Research and Education in Engineering for Sustainable Future (Inter-Academia 2021) （2021年10月21日）招待講演以外 [発表者]K. Yamaguchi, M. Tabe, D. Moraru [備考] Poster presentation Francisk Skorina Gomel State University, Gomel, BELARUS (Virtual conference) [38]. Theoretical study of the impact of a donor-acceptor pair on tunneling current in Si nanodiodes The 19th International Conference on Global Research and Education in Engineering for Sustainable Future (Inter-Academia 2021) （2021年10月21日）招待講演以外 [発表者]C. Pandy, K. Yamaguchi, Y. Neo, H. Mimura, M. Tabe, D. Moraru [備考] Poster presentation Francisk Skorina Gomel State University, Gomel, BELARUS (Virtual conference) [39]. Silicon electronics at atomic and molecular scales 13th International Conference on Physics of Advanced Materials (ICPAM-13) （2021年9月）招待講演 [発表者]D. Moraru [備考] Hotel Eden Roc, Sant Feliu de Guixols, SPAIN (Virtual conference) [40]. Statistical analysis of likelihood of donor-induced quantum dots in Si nano-transistors at different concentrations 13th International Conference on Physics of Advanced Materials (ICPAM-13) （2021年9月）招待講演以外 [発表者]T. T. Jupalli, A. Debnath, G. Prabhudesai, D. Moraru [備考] Hotel Eden Roc, Sant Feliu de Guixols, SPAIN (Virtual conference) [41]. Measurements of single-electron tunneling through atoms in nanoscale devices Physics of Advanced Materials School (PAMS-4) （2021年9月）招待講演 [発表者]D. Moraru [備考] Hotel Eden Roc, Sant Feliu de Guixols, SPAIN (Virtual conference) [42]. Looking for Atomic and Molecular Functionalities in Silicon Nanoscale Devices At home with nano （2021年4月1日）招待講演 [発表者]D. Moraru [備考] Center at Trinity College ( Dublin, IRELAND) Webinar [43]. Study of single-electron tunneling transport through coupled-donor molecule in low-doped SOI-FETs towards elevated temperature 7th International Symposium toward the Future of Advanced Researches in Shizuoka University (ISFAR-SU) （2021年3月5日）招待講演以外 [発表者]A. Debnath , T Teja Jupalli, C. Pandy, D. Moraru [備考] Zoom Webinar [44]. Electron transport in silicon nano-devices at atomic and molecular-level scales 2nd International Conference on Microelectronic Devices, Circuits and Systems (ICMDCS2021) （2021年2月11日）招待講演 [発表者]D. Moraru [備考] Virtual Conference Vellore Institute of Technoloy (Vellore, INDIA) [45]. Study of Electrical Characteristics of Codoped Si-Nanoscale Transistors 6th International Conference on Nanoscience and Nanotechnology (ICONN2021) （2021年2月2日）招待講演以外 [発表者]C. Pandy, G. Prabhudesai, K. Yamaguchi, V. N. Ramakrishnan, Y. Neo, H. Mimura, D. Moraru [備考] Poster presentation (virtual) SRM Institute of Science and Technology (Chennai, INDIA) [46]. Band-to-Band Tunneling in Highly-Doped Silicon-on-Insulator Nanoscale Esaki Diodes 6th International Conference on Nanoscience and Nanotechnology (ICONN2021) （2021年2月1日）招待講演 [発表者]D. Moraru, G. Prabhudesai [備考] SRM Institute of Science and Technology (Chennai, INDIA) Virtual Conference [47]. Study of Randomly-Formed Interacting Quantum Dots in Highly-Doped Si Junctionless Transistors 6th International Conference on Nanoscience and Nanotechnology (ICONN2021) （2021年2月1日）招待講演以外 [発表者]T. Teja. Jupalli, G. Prabhudesai, A. Debnath, P. Jeevan Kumar, D. Moraru [備考] Poster presentations (virtual) SRM Institute of Science and Technology (Chennai, INDIA) [48]. Coulomb-Blockade Charge-Transport Mechanism in Band-to Band Tunneling in Heavily-Doped Low-Dimensional Silicon Esaki Diodes IEEE Silicon Nanoelectronics Workshop 2020 (SNW 2020) （2020年6月13日）招待講演以外 [発表者]G. Prabhudesai, K. Yamaguchi, M. Tabe, D. Moraru [備考] Virtual [49]. A Study of Single-Electron Tunneling Functionalities in Highly-Doped Silicon-on-Insulator Junctionless Transistors IEEE Silicon Nanoelectronics Workshop 2020 (SNW2020) （2020年6月13日）招待講演以外 [発表者]T. Teja Jupalli, G. Prabhudesai, M. Hasan, A. Debnath, P. Jeevan Kumar, M. Tabe, D. Moraru [備考] Virtual [50]. Effects of Co-doping on the Transport Characteristics of Nanoscale n-type Silicon-on-Insulator Transistors IEEE Silicon Nanoelectronics Workshop 2020 (SNW2020) （2020年6月13日）招待講演以外 [発表者]C. Pandy, A. Debnath, K. Yamaguchi, T. Teja Jupalli, G. Prabhudesai, Ramakrishnan V N, Y. Neo, H. Mimura, D. Moraru [備考] Virtual [51]. ナノスケール・シリコンにおける電子・電子散乱を利用したエレクトロン・アスピレーター第67回応用物理学会春季学術講演会（2020年3月13日）招待講演 [発表者]小野行徳, ヒンマフィルダス, 渡邉時暢, 堀匡寛, ダニエルモラル, 高橋庸夫, 藤原聡 [備考] 上智大学四谷キャンパス [52]. Novel dopant-mediated charge transport mecanisms in nanoscale Si Esaki diodes The 6th International Symposium toward the Future of Advanced Researches in Shizuoka University (ISFAR-SU2020) （2020年3月5日）招待講演以外 [発表者]G. Prabhudesai, K. Yamaguchi, M. Tabe, D. Moraru [備考] Shizuoka University [53]. Electrical characteristics of heavily-doped junctionless nanoscale silicon-on-insulator transistors with single-electron tunneling functionalities The 6th International Symposium toward the Future of Advanced Researches in Shizuoka University (ISFAR-SU2020) （2020年3月5日）招待講演以外 [発表者]T. T. Jupalli, G. Prabhudesai, A. Debnath, D. Moraru [備考] Shizuoka University [54]. Study of single-electron tunneling through competitive parallel paths via donor-atoms in Si nano-transistors The 6th International Symposium toward the Future of Advanced Researches in Shizuoka University (ISFAR-SU2020) （2020年3月5日）招待講演以外 [発表者]A. Debnath, M. Hasan, T. T. Jupalli, G. Prabhudesai, D. Moraru [備考] Shizuoka University [55]. Study of Single-Election Tunneling Single-1dopant Percolation Paths in Nanoscale-SI Transistors Inter-Academia Asia 2019 （2019年12月3日）招待講演以外 [発表者]A. Debnath, G. Prabhudesai, T. Teja Jupalli, R. Tsujimura, D. Moraru [備考] Hotel Associa Shizuoka,Shizuoka [56]. Electron aspirator using electron-electron scattering in nanoscale silicon The 21st Takayanagi Kenjiro Memorial Symposium （2019年11月12日）招待講演 [発表者]H. Firdaus, T. Watanabe, M. Hori, D. Moraru, Y. Takahashi, A. Fujiwara, Y. Ono [備考] Shizuoka University [57]. Control and Observation of Single-electron Tunneling via Dopants in Si Nanoscale Devices The 1st International Symposium on Single Atom Electronics （2019年10月13日）招待講演 [発表者]D. Moraru [備考] Shanghai Jiao Tong University Minhang Campus, Shanghai, China [58]. Single-electron tunneling percolation in dopant-atom networks formed in sillicon nanoscale transistors Inter-Academia2019 （2019年9月）招待講演以外 [発表者]D. Moraru, M. Hasan, A. Debnath, A. Afiff, G. Prabhudesai [備考] Danubius Hotel Gellert, Budapest, Hungary Hotel Annabella Beach Resort, Balatonfured, Hungary [59]. Ab initio study of the effect ofelectric field on a donor-acceptor pair in Si nanostructures Inter-Academia2019 （2019年9月）招待講演以外 [発表者]K. Yamaguchi, G. Prabhudesai, M. Muruganathan, H. Mizuta, M. Tabe, D. Moraru [備考] Danubius Hotel Gellert, Budapest, HUNGARY Hotel Annabella Beach Resort, Balatonfured, Hungary [60]. Research on single-charge tunneling via multiple-dopant quantum dots in Si nanodevices 広島大学ワークショップ（2019年6月26日）招待講演以外 [発表者]D.Moraru [備考] 開催場所：静岡大学高柳記念会館 [61]. Effect of tunnel resistance modulation on single-electron tunneling in selectively-doped Si nano-transistors 66th JSAP Spring Meeting （2019年3月11日）招待講演以外 [発表者]A. Afiff, A. Udhiarto, H. Sudibyo, D. Hartanto, M. Tabe, D. Moraru [備考] Tokyo Institute of Technology [62]. Effect of dimensionality on the formation of dopant-induced quantum-dots in heavily doped Si Esaki diodes 66th JSAP Spring Meeting （2019年3月11日）招待講演以外 [発表者]G. Prabhudesai, M. Manoharan, M. Hori, Y. Ono, H. Mizuta, M. Tabe, D. Moraru [備考] Tokyo Institute of Technology [63]. 第一原理計算を用いた外部電場によるSi ナノ構造上の不純物への影響第66回応用物理学会春季学術講演会（2019年3月11日）招待講演以外 [発表者]山口謙祐，ムルガナタン・マノハラン，水田博，田部道晴，モラル・ダニエル [備考] 東京工業大学 [64]. Single-charge tunneling through dopant-induced quantum dots in 2D pn tunnel diodes: a nanoscale effect The 5th International Symposium toward the Future of Advanced Researches in Shizuoka University 2019 （2019年3月6日）招待講演以外 [発表者]G. Prabhudesai, M. Hori, Y. Ono, M. Tabe, D. Moraru [備考] Agriculture Building, Shizuoka Campus, Shizuoka University [65]. Single-electron tunneling in selectively-doped Si nano-transistors: role of tunnel resistance tuning The 5th International Symposium toward the Future of Advanced Researches in Shizuoka University 2019 （2019年3月6日）招待講演以外 [発表者]Adnan Afiff, Mahmudul Hasan,Arief Udhiarto, Harry Sudibyo, Djoko Hartanto, Michiharu Tabe, Daniel Moraru [備考] Agriculture Building, Shizuoka Campus, Shizuoka University [66]. EFFECT OF DIMENSIONALITY ON DONOR-INDUCED QUANTUM-DOT FORMATION IN Si PN DIODES Inter Academia Asia The 5th Conference, December 2018 Young Researchers Conference （2018年12月4日）招待講演以外 [発表者]G. Prabhudesai, Y. Ono, M. Tabe, D. Moraru [備考] Hotel Associa Shizuoka [67]. Control of Dopant-Atom Chains in Selectively-Doped Si Nano-Transistors for Single-Electron Transfer Applications The 20th Takayanagi Kenjiro Memorial Symposium and The 4th ICNERE Joint Symposium （2018年11月28日）招待講演以外 [発表者]A.Afiff, M.Hasan, A.Udhiarto, H.Sudibyo, D.Hartanto, M.Tabe, D.Moraru [備考] Hamamatsu Campus, Shizuoka University [68]. Analysis of Single-Electron Tunneling via Donor-induced Quantum Dots in Si Nanoscale Esaki Diodes The 20th Takayanagi Kenjiro Memorial Symposium and The 4th ICNERE Joint Symposium （2018年11月28日）招待講演以外 [発表者]G.Prabhudesai, G.Girijakumari, M.Manoharan, L.T.Anh, H.Mizuta, M.Hori, Y.Ono, M.Tabe, D.MOraru [備考] Hamamatsu Campus, Shizuoka University [69]. Study on High -Temperature Single-Electron Tunneling via Dopant Quantum Dots in Silicon Nanodevices The 20th Takayanagi Kenjiro Memorial Symposium and The 4th ICNERE Joint Symposium （2018年11月27日）招待講演 [発表者]D. Moraru [備考] Hamamatsu Campus, Shizuoka University [70]. Single-Electron Tunneling via Dopants in Silicon Nano-Transistors and Nano-Diodes International Conference on Industrial, Chemical, Mechanical and Electrical Engineering (ICIMECE 2018) （2018年10月9日）招待講演 [発表者]D.Moraru and M.Tabe [備考] Alana Hotel & Convention Center, Solo, Indonesia [71]. A Statistical Study on the Origin of Dopant Clusters in Highly-Doped Si Nanoscale pn Tunnel Diodes 17th International Conference on Global Research and Education (Inter-Academia2018) （2018年9月25日）招待講演以外 [発表者]G. Prabhudesai, G. Greeshma, M. Tabe, D. Moraru [備考] Hotel EUROPA ROYALE Kaunas,Lithuania [72]. A Study of Single-Electron Tunneling in 1D Distributed Arrays of Donor Quantum Dots 17th International Conference on Global Research and Education (Inter-Academia 2018) （2018年9月24日）招待講演以外 [発表者]A. Afiff, A. Samanta, A. Udhiarto, H. Sudibyo, D. Hartanto, M. Tabe, D. Moraru [備考] Kaunas University of Technology,Lithuania [73]. Interactions between donors and acceptors in nanoscale Si pn tunnel diodes and impact on inter-band tunneling 4th International Symposium toward the Future of Advanced Researches in Shizuoka University 2018 （2018年3月）招待講演以外 [発表者]G. Prabhudesai,G. Greeshma,M. Shibuya,T. Okasaka,T. Negoro, M. Tabe, D. Moraru [備考] Hamamatsu Campus, Shizuoka University [74]. Role of the position and number of donor-induced quantum dots in Si nano-channels for Coulomb blockade transport 4th International Symposium toward the Future of Advanced Researches in Shizuoka University 2018 （2018年3月）招待講演以外 [発表者]A. Afiff,T. Yamashita,K. Sakazaki,R. Tsujimura,M. Hasan,A. Samanta,A. Udhiarto,H. Sudibyo,D. Hartanto,M. Tabe,D. Moraru [備考] Hamamatsu Campus, Shizuoka University [75]. Conditions for Coulomb blockade inter-band tunneling transport in nanoscale Si pn tunnel diodes 4th International Symposium toward the Future of Advanced Researches in Shizuoka University 2018 （2018年3月）招待講演以外 [発表者]G. Greeshma,M. Shibuya,G. Prabhudesai,M. Tabe,D. Moraru [備考] Hamamatsu Campus, Shizuoka University [76]. CHARACTERIZATION OF COULOMB-BLOCKADE TRANSPORT IN DONOR QUANTUM DOTS FORMED IN MODERATELY-DOPED Si NANO-TRANSISTORS Inter Academia Asia 2017 （2017年12月）招待講演以外 [発表者]A.Afiff,T.Yamashita,A.Udhiarto,H.Sudibyo,D.Hartanto,A.Samanta,M.Tabe,D.Moraru [備考] ホテルアソシア静岡 [77]. IDENTIFICATION OF TUNNELING VIA DISCRETE DOPANT-INDUCED ENERGY STATES IN LOW-DIMENSIONAL Si TUNNEL DIODES Inter Academia Asia 2017 （2017年12月）招待講演以外 [発表者]G.Prabhudesai,M.Shibuya,G.Greeshma,M.Tabe,D.Moraru [備考] ホテルアソシア静岡 [78]. Role of Built-in Electric Field in Inter-band Tunneling via A-few-dopat Clusters in Nanoscale Si Tunnel Diodes 19th Takayanagi Kenjiro Memorial Symposium （2017年11月）招待講演以外 [発表者]G. Prabhudesai,G. Greeshma,M. Shibuya,R. Nuryadi,M. Tabe,D. Moraru [備考] Hamamatsu Campus, Shizuoka University [79]. Analysis of Low-Temperature Single-Electron Tunneling Transport via Selectively-Doped A-Few-Donor QDs 19th Takayanagi Kenjiro Memorial Symposium （2017年11月）招待講演以外 [発表者]A. Afiff,T. Hasan,T. Yamashita,A. Udhiarto,H. Sudibyo,D. Hartanto,A. Samanta,M. Tabe ,D. Moraru [備考] Hamamatsu Campus, Shizuoka University [80]. 超高濃度ドーパントが拓く新しい半導体物性 The 4th De Novo Si Workshop （2017年11月）招待講演以外 [発表者]M. Tabe,D.Moraru [備考] 東京農工大学 [81]. Single-electron tunneling phenomena in silicon nano-transistors with dopant-induced quantum dots IEEEInternational Microwave,Electron Devices & Solid-State Circuit Symposum (IMESS)2017 （2017年10月）招待講演 [発表者]D.Moraru,M.Tabe [備考] Penang Skills Development Center Penang,Malaysia [82]. Effects of Electric Field on Tunneling via Dopant States in Silicon Nano-Devices The 16th International Conference on Global Research and Education (Inter-Academia2017) （2017年9月）招待講演以外 [発表者]D.Moraru,A.Afiff,T.Hasan,G.Prabhudesai,G.Greeshma,M.Tabe [備考] Alexandru Ioan Cuza University of Iasi,Romania [83]. Silicon Single-Electron Tunneling Transistors with Dopat Quantum-Dots:Perspectives for Room-Temperature Operation International Conference o Nanoscience and Nanotechnology (ICONN 2017) （2017年8月）招待講演 [発表者]D.Moraru,A.Afiff,T.Hasan,A.Samanta,M.Tabe [備考] SRM University, Chennai, India [84]. Electric Field Effect on Dopant Bands in Silicon 2D Esaki Tunnel Diodes International Conference on Nanoscience and Nanotechnology(ICONN 2017) （2017年8月）招待講演以外 [発表者]G.Prabhudesai,G.Greeshma,M.Manoharan,H.Mizuta,M.Tabe,D.Moraru [備考] SRM University, Chennai, India [85]. Impact of Dopant-Atoms in Inter-band Tunneling in Si Nanoscale Tunnel Diods 15th International Conference on Quality in Research (QiR 2017) （2017年7月）招待講演以外 [発表者]D.Moraru,G.Prabhudesai,M.Shibuya,M.Tabe [備考] The Westin Resort Nusa Dua, Bali, Indonesia [86]. A Statistical Study on the Formation of A-Few-Dopant Quantum Dots in Highly-Doped Si Nanowire Transistors 15th International Conference on Quality in Research (QiR 2017) （2017年7月）招待講演以外 [発表者]A.Afiff,A.Samanta,T.Hasan,A.Udhiarto,H.Sudibyo,D.Hartanto,M.Tabe,D.Moraru [備考] The Westin Resort Nusa Dua Bali, Indonesia [87]. Probing the Impact of Donor Quantum Dots with High-Bias Stability Diagrams in Selectively-Doped Si Nanoscale Transistors 2017 Silicon Nanoelectronics Workshop （2017年6月）招待講演以外 [発表者]A.Afiff,A.Samanta,T.Hasan,A.Udhiarto,D.Hartano,H.Sudibyo,M.Tabe,D.Moraru [備考] Rihga Royal Hotel Kyoto [88]. Inter-band Tunneling Mechanisms via Dopant-induced Energy States 2017 Silicon Nanoelectronics Workshop （2017年6月）招待講演以外 [発表者]G.Prabhudesai,G.Greeshma,M.Shibuya,M.Manoharan,H.Mizuta,M.Tabe&&D.Moraru [備考] Rihga Royal Hotel Kyoto [89]. Single-Electron Tunneling via Dopant-Quantum-Dots Embedded in Silicon Nano-Transistors and Nano-Diodes EM-NANO2017 （2017年6月）招待講演 [発表者]D.Moraru,M.Tabe [備考] AOSSA, Fukui [90]. Donor-donor coupling and co-dopants interaction in silicon nanostructured devices IV Bilateral Italy-Japan Seminar （2017年5月）招待講演 [発表者]M.Muruganathan,D.Moraru,M.Tabe,H.Mizuta [備考] Seven Park Hotel, Lecco, Italy [91]. First-principles study of inter-band tunneling current through co-dopants in Si Nano-pn Tunnel Diodes 64th JASP Spring Meeting （2017年3月）招待講演以外 [発表者]M.Muruganathan,D.Moraru,M.Tabe,H.Mizuta [備考] Pacifico Yokohama, Kanagawa [92]. Study of Stability of A-few-donor Quantum Dots with Different Configurations for Room-Temperature Single-Electron Tunneling Operation 64th JASP Spring Meeting （2017年3月）招待講演以外 [発表者]T.Hasan,A.Samanta,A.Afiff,L.T.Anh,M.Manoharan,M.Hori,Y.Ono,H.Mizuta,M.Tabe,D.Moraru [備考] Pacifico Yokohama, Kanagawa [93]. Study of Electron Localization Effects in Donor-Acceptor Pairs in Low-Dimensional Si Tunnel Diodes 64th JASP Spring Meeting （2017年3月）招待講演以外 [発表者]G.Prabuhudesai,L.T.Anh,M.Shibuya,M.Manoharan,M.Hori,Y.Ono,H.Mizuta,M.Tabe,D.Moraru [備考] Pacifico Yokohama, Kanagawa [94]. Coupled Dopant-Atoms as Building Blocks for Practical Atomic-Level Tunneling Operation of Si Nanodevices The 18th Takayanagi Kenjiro Memorial Symposium （2016年12月）招待講演 [発表者]D.Moraru,A.Samanta,M.Tabe [備考] Hamamatsu Campus,Shizuoka University [95]. シリコンナノ構造を基盤としたドーパント原子デバイス表面科学合同講演会（2016年11月）招待講演以外 [発表者]M.Tabe,A.Samanta,D.Moraru [備考] Nagoya congress center,Nagoya [96]. Single and Coupled-Dopants as Quantum Dots for Room Temperature Single-Electron Tunneling ICNERE/EECCiS2016 （2016年11月）招待講演以外 [発表者]D.Moraru,A.Samanta,M.Tabe [備考] Royal Orchid Garden Hotel, Malang, Indonesia [97]. Effect of coupling of a few donor-atoms as a quantum dot for single-electron tunneling operation at room temperature JSAP 2016 Fall Meeting （2016年9月）招待講演以外 [発表者]D.Moraru,A.Samanta,T.Hasan,M.Muruganathan,H.Mizuta,M.Tabe [備考] Toki Messe, Nigata [98]. Analysis of phonon assistance as a function of temperature in inter-band tunneling in 2D Si lateral Esaki diodes JSAP 2016 Fall Meeting （2016年9月）招待講演以外 [発表者]D.Moraru,M.Shibuya,R.Nuryadi,M.Hori,Y.Ono,M.Tabe [備考] Toki Messe, Nigata [99]. Inter-Band Current Enhancement by Dopant-Atoms in Low-Dimensional pn Tunnel Diodes IA2016 （2016年9月）招待講演以外 [発表者]D.Moraru,M.Muruganathan,L.T.Anh,R.Nuyadi,H.Mizuta,M.Taber [備考] Warsaw University, Poland [100]. Toward Room Temperature Operation of Dopant Atom Transistors IA2016 （2016年9月）招待講演以外 [発表者]M.Tabe,A.Samanta,D.Moraru [備考] Warsaw University, Poland [101]. Enhancement of Inter-Band Tunneling due to Low-Dimensionality of Lateral 2D Silicon Esaki Diodes 2016 Silicon Nanoelectronics Workshop （2016年6月）招待講演以外 [発表者]D.Moraru,H.N.Tan,L.T.Anh,M.Manoharan,T.Mizuno,R.Nuryadi,H.Mizuta,M.Tabe [URL] [備考] Honolulu,USA [102]. Quantum tunneling in dopant-atom transistors up to room temperature EMN Quantum Meeting （2016年4月）招待講演 [発表者]D. Moraru,A. Samanta, L. T. Anh, M. Manoharan, T. Mizuno, K. Tyszka, R. Jablonski, H. Mizuta, and M. Tabe [URL] [備考] Phuket, Thailand [103]. Si中の個別ドーパントの物理と利用：FETとエサキダイオード (Physics and applications of individual dopants in Si: FETs and Esaki diodes) Workshop on Nanodevice Technologies 2016 （2016年3月）招待講演 [発表者]M. Tabe,D. Moraru; A. Samanta; T. Mizuno [備考] Hiroshima University [104]. ドーパントを介したトンネル電流の評価とデバイス応用 (Results of tunneling currents via dopants and device applications) ナノエレクトロニクス新機能創出・集積化技術専門員会「トンネル現象を利用したデバイスとその物理」 (Workshop on tunneling devices and their physics – Institute of Electrical Engineers of Japan/IEEJ) （2016年3月）招待講演 [発表者]M. Tabe,D. Moraru; A. Samanta; T. Mizuno [備考] Waseda University [105]. Tunneling-transport operation of selectively-doped dopant-atom transistors up to room temperature 63rd JSAP Spring Meeting （2016年3月）招待講演以外 [発表者]A. Samanta,D. Moraru; Y. Takasu; T. Mizuno; M. Tabe [備考] Tokyo Institute of Technology [106]. Effects of phonons and discrete dopants on band-to-band tunneling in two-dimensional Si pn junction diodes 63rd JSAP Spring Meeting （2016年3月）招待講演以外 [発表者]D. Moraru,H. N. Tan; R. Unno; T. Mizuno; M. Manoharan; L. T. Anh; R. Nuryadi; H. Mizuta; M. Tabe [備考] Tokyo Institute of Technology [107]. First-principles study of the impact of inter-dopants interaction on their wavefunctions in downscaled P-B co-doped Si nanorods 63rd JSAP Spring Meeting （2016年3月）招待講演以外 [発表者]L. T. Anh,D. Moraru; M. Manoharan; M. Tabe; H. Mizuta [備考] Tokyo Institute of Technology [108]. My decade in nanoelectronics - the world of individual electrons, atoms and molecules European Research(ers') Day 2015 （2015年12月）招待講演以外 [発表者]D. Moraru [備考] Tokyo, EU Delegation [109]. Atomic and molecular effects based on dopants in silicon nanodevices International Conference on Small Science (ICSS 2015) （2015年11月）招待講演 [発表者]D. Moraru,A. Samanta, T. Mizuno, M. Tabe [備考] Phuket, Thailand [110]. Effect of individual dopants in nano-SOI-MOSFETs and nano-pn-diodes ECS ULSI Process Integration 9 Conference （2015年10月）招待講演 [発表者]M. Tabe,D. Moraru, A. Samanta, K. Tyszka, H.N. Tan, Y. Takasu, R. Jablonski, L.T. Anh, H. Mizuta, T. Mizuno [備考] Phoenix, USA [111]. Impact of dopant-atoms on electron tunneling into nanoscale-transistor channels 14th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) （2015年9月）招待講演以外 [発表者]D. Moraru,A. Samanta, Y. Takasu, K. Tyszka, T. Mizuno, R. Jablonski, M. Tabe [備考] Hamamatsu [112]. Correlation between single-electron tunneling characteristics and potential landscapes in dopant-atom transistors 76th JSAP Autumn Meeting （2015年9月）招待講演以外 [発表者]K. Tyszka,D. Moraru,A. Samanta,T. Mizuno,R. Jablonski,M. Tabe [備考] Nagoya [113]. High-temperature single-electron tunneling transport through dopant-cluster in narrow channel SOI-FETs 76th JSAP Autumn Meeting （2015年9月）招待講演以外 [発表者]A. Samanta,D. Moraru,Y. Takasu,T. Mizuno,M. Tabe [備考] Nagoya [114]. ドーパントによるバンド間トンネルの増強効果 76th JSAP Autumn Meeting （2015年8月）招待講演以外 [発表者]H.N. Tan,D. Moraru,L.T. Anh,M. Manoharan,T. Mizuno,H. Mizuta,M. Tabe [備考] Nagoya [115]. Dopant-cluster-assisted tunneling in Si nanodevices Silicon Quantum Electronics Workshop 2015 （2015年8月）招待講演以外 [発表者]M. Tabe,D. Moraru,A. Samanta,H. N. Tan,L. T. Anh,M. Manoharan,H. Mizuta,T. Mizuno [備考] Takamatsu [116]. Impact of co-doped and intrinsic region length on subthreshold swing (SS) in Si nanoscale lateral p-n and p-i-n devices Quality in Research (QiR) Conference （2015年8月）招待講演以外 [発表者]K. Fauziah,A. Udhiarto,D. Moraru,T. Mizuno,D. Hartanto,M. Tabe [備考] Lombok, Indonesia/University of Indonesia [117]. I-V characteristics of highly-doped p-i-n diodes (Effects of nanometer scale intrinsic silicon-on-insulator layer at room temperature) Quality in Research (QiR) Conference （2015年8月）招待講演以外 [発表者]A. A. N. Gde Sapteka,S. Purwiyanti,A. Udhiarto,H. Sudibyo,D. Hartanto,H. N. Tan,R. Unno,D. Moraru,M. Tabe [備考] Lombok, Indonesia/University of Indonesia [118]. Physics of strongly-coupled dopant atoms in nanodevices Quality in Research (QiR) Conference （2015年8月）招待講演以外 [発表者]D. Moraru,K. Tyszka,Y. Takasu,A. Samanta,T. Mizuno,R. Jablonski,M. Tabe [備考] Lombok, Indonesia/University of Indonesia [119]. Recent progress in single-dopant atom devices Quality in Research (QiR) Conference （2015年8月）招待講演 [発表者]M. Tabe,D. Moraru,A. Samanta,T. Mizuno [備考] Lombok, Indonesia/University of Indonesia [120]. The impact of single donor and donor-acceptor pair on electronic and transport properties of silicon nanostructures IEEE Silicon Nanoelectronics Workshop （2015年6月）招待講演以外 [発表者]L. T. Anh,D. Moraru,M. Manoharan,M. Tabe,H. Mizuta [備考] Rihga Royal Hotel, Kyoto [121]. Dopant-assisted tunnel-current enhancement in two-dimensional Esaki diodes IEEE Silicon Nanoelectronics Workshop （2015年6月）招待講演以外 [発表者]H. N. Tan,D. Moraru,K. Tyszka,A. Sapteka,S. Purwiyanti,L. T. Anh,M. Manoharan,T. Mizuno,R. Jablonski,D. Hartanto,H. Mizuta,M. Tabe [備考] Rihga Royal Hotel, Kyoto [122]. Position and number control of donor-QD potential by pattern-doping in SOI-FET channel (poster) IEEE Silicon Nanoelectronics Workshop （2015年6月）招待講演以外 [発表者]K. Tyszka,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [備考] Rihga Royal Hotel, Kyoto [123]. Impact of diffused donor-clusters near lead/channel boundary on high-temperature single-electron tunneling in narrow SOI-FETs IEEE Silicon Nanoelectronics Workshop （2015年6月）招待講演以外 [発表者]D. Moraru,A. Samanta,Y. Takasu,K. Tyszka,T. Mizuno,R. Jablonski,M. Tabe [備考] Rihga Royal Hotel, Kyoto [124]. Tunneling via single and coupled dopants in Si nanodevices EMN Meeting on Quantum Technology （2015年4月）招待講演 [発表者]D. Moraru,A. Samanta,K. Tyszka,L. T. Anh,M. Manoharan,T. Mizuno,R. Jablonski,H. Mizuta,M. Tabe [備考] Beijing, China [125]. Surface potential observation of heavily-doped Si by KPFM 62nd JSAP Spring Meeting （2015年3月）招待講演以外 [発表者]K. Tyszka,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [備考] Tokai Univ., Atsugi [126]. Effect of individual dopants in Esaki tunneling diodes 62nd JSAP Spring Meeting （2015年3月）招待講演以外 [発表者]H. N. Tan,D. Moraru,R. Unno,A. Sapteka,S. Purwiyanti,L. T. Anh,M. Manoharan,T. Mizuno,H. Mizuta,D. Hartanto,M. Tabe [備考] Tokai Univ., Atsugi [127]. Electric-field-assisted formation of an interfacial double-donor molecule in Si nano-transistors 62nd JSAP Spring Meeting （2015年3月）招待講演以外 [発表者]A. Samanta,D. Moraru,T. Mizuno,M. Tabe [備考] Tokai Univ., Atsugi [128]. Dopant atom MOSFET by low-concentration phosphorus doping (低濃度リンドープによるドーパント原子MOSFET) 62nd JSAP Spring Meeting （2015年3月）招待講演以外 [発表者]Y. Takasu,D. Moraru,T. Mizuno,M. Tabe [備考] Tokai Univ., Atsugi [129]. First-principle calculations of the interactions between single phosphorus donor and boron acceptor in the P-B co-doped silicon nanostructures 62nd JSAP Spring Meeting （2015年3月）招待講演以外 [発表者]L. T. Anh,D. Moraru,M. Muruganathan,M. Tabe,H. Mizuta [備考] Tokai Univ., Atsugi [130]. Interactions of individual dopants and macroscopic quantum dots in weakly-doped nanoscale SOI-FETs 62nd JSAP Spring Meeting （2015年3月）招待講演以外 [発表者]D. Moraru,Y. Takasu,A. Samanta,T. Mizuno,M. Tabe [備考] Tokai Univ., Atsugi [131]. Tunneling transport via dopant-induced quantum dots in silicon nano-devices 3rd International Conference on Nanoscience and Nanotechnology (ICONN), Abstracts pp. 28 （2015年2月）招待講演 [発表者]D. Moraru,K. Tyszka,A. Samanta,T. Mizuno,R. Jablonski,M. Tabe [備考] SRM Univ., Chennai, India [132]. Interaction between dopant atoms and interface in nanoscale transistors 3rd International Conference on Nanoscience and Nanotechnology (ICONN), Abstracts pp. 38 （2015年2月）招待講演以外 [発表者]A. Samanta,D. Moraru,T. Mizuno,M. Tabe [備考] SRM Univ., Chennai, India [133]. Interface-assisted merging of two donor atoms in ultrathin Si-transistors (poster) International Symposium “Toward the Future of Advanced Researches in Shizuoka University”, Proceedings pp. 46 （2015年1月）招待講演以外 [発表者]A. Samanta,D. Moraru,T. Mizuno,M. Tabe [備考] Shizuoka Univ., Hamamatsu [134]. KPFM observation of donors in transistor channels doped with different concentrations (poster) International Symposium “Toward the Future of Advanced Researches in Shizuoka University”, Proceedings pp. 48 （2015年1月）招待講演以外 [発表者]K. Tyszka,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [備考] Shizuoka Univ., Hamamatsu [135]. Atomic and molecular behavior in tunneling transport via dopants in nano-transistors (poster) International Symposium “Toward the Future of Advanced Researches in Shizuoka University”, Proceedings pp. 47 （2015年1月）招待講演以外 [発表者]D. Moraru,A. Samanta,Y. Takasu,T. Mizuno,M. Tabe [備考] Shizuoka Univ., Hamamatsu [136]. Low-temperature spectroscopy of donor states in silicon nano-channels (poster) 16th Takayanagi Kenjiro Memorial Symposium, Proceedings pp. PS1-7 （2014年11月）招待講演以外 [発表者]D. Moraru,T. Tsutaya,Y. Takasu,A. Samanta,T. Mizuno,M. Tabe [備考] Shizuoka Univ., Hamamatsu [137]. Single-electron transport in double-donor system at Si/SiO2 interface in an ultrathin SOI-FET (poster) 16th Takayanagi Kenjiro Memorial Symposium, Proceedings pp. PS1-8 （2014年11月）招待講演以外 [発表者]A. Samanta,D. Moraru,T. Mizuno,M. Tabe [備考] Shizuoka Univ., Hamamatsu [138]. KPFM observation of donors in field-effect transistor channel (poster) 16th Takayanagi Kenjiro Memorial Symposium, Proceedings pp. PS1-9 （2014年11月）招待講演以外 [発表者]K. Tyszka,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [備考] Shizuoka Univ., Hamamatsu [139]. Silicon nanoscale transistors with dopant-induced quantum dots 2nd International Conference on Nano Electronics Research and Education (ICNERE 2014), Proceedings pp. 55-56 （2014年11月）招待講演以外 [発表者]D. Moraru,K. Tyszka,A. Samanta,Y. Takasu,T. Tsutaya,T. Mizuno,R. Jablonski,M. Tabe [備考] Shizuoka Univ., Hamamatsu [140]. Transport phenomena in nanoscale silicon tunneling pn diodes 2nd International Conference on Nano Electronics Research and Education (ICNERE 2014), Proceedings pp. 57-58 （2014年11月）招待講演以外 [発表者]A. A. N. G. Sapteka,S. Purwiyanti,H. N. Tan,R. Unno,D. Moraru,T. Mizuno,A. Udhiarto,D. Hartanto,M. Tabe [備考] Shizuoka Univ., Hamamatsu [141]. シリコン中の少数個不純物の電子状態とデバイス応用 (Electronic states and device physics of a few impurities in silicon) 電子情報通信学会東北支部学術講演会 (IEICE Electronic Devices – Tohoku Branch – Meeting) （2014年10月）招待講演 [発表者]M. Tabe,D. Moraru,T. Mizuno [備考] Akita Univ. [142]. Impact of dopant-induced states on interband tunneling in nanoscale pn junctions International Conference on Solid State Devices and Materials (SSDM) （2014年9月）招待講演以外 [発表者]K. Tyszka,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [備考] Tsukuba [143]. Impact of dopant-induced states on interband tunneling in nanoscale pn junctions International Conference on Solid State Devices and Materials (SSDM) （2014年9月）招待講演以外 [発表者]H. N. Tan,S. Purwiyanti,D. Moraru,L. T. Anh,M. Manoharan,T. Mizuno,H. Mizuta,D. Hartanto,M. Tabe [備考] Tsukuba [144]. Impact of doping concentration regimes on low-temperature tunneling in nanoscale SOI-FETs 75th JSAP Autumn Meeting （2014年9月）招待講演以外 [発表者]D. Moraru,Y. Takasu,T. Tsutaya,A. Samanta,L. T. Anh,M. Manoharan,T. Mizuno,H. Mizuta,M. Tabe [備考] Hokkaido Univ., Sapporo [145]. Interband tunneling through individual dopants in nanoscale pn junctions 75th JSAP Autumn Meeting （2014年9月）招待講演以外 [発表者]H. N. Tan,S. Purwiyanti,D. Moraru,L. T. Anh,M. Manoharan,T. Mizuno,H. Mizuta,D. Hartanto,M. Tabe [備考] Hokkaido Univ., Sapporo [146]. Effect of dopants in tunnel barriers of selectively doped SOI-FETs 75th JSAP Autumn Meeting （2014年9月）招待講演以外 [発表者]A. Samanta,D. Moraru,T. Tsutaya,L. T. Anh,M. Manoharan,T. Mizuno,H. Mizuta,M. Tabe [備考] Hokkaido Univ., Sapporo [147]. KPFM imaging of donor clusters in selectively-doped SOI-FET 75th JSAP Autumn Meeting （2014年9月）招待講演以外 [発表者]K. Tyszka,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [備考] Hokkaido Univ., Sapporo [148]. Tunneling transport in quantum dots formed by coupled dopant atoms 13th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) （2014年9月）招待講演以外 [発表者]D. Moraru,A. Samanta,T. Tsutaya,Y. Takasu,T. Mizuno,M. Tabe [備考] Riga, Latvia [149]. Study of interband tunneling in nanoscale silicon pn junctions 13th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) （2014年9月）招待講演以外 [発表者]S. Purwiyanti,H. N. Tan,D. Moraru,T. Mizuno,D. Hartanto,M. Tabe [備考] Riga, Latvia [150]. KPFM observation of dopant arrangements in silicon transistors 13th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) （2014年9月）招待講演以外 [発表者]K. Tyszka,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [備考] Riga, Latvia [151]. Control of electron transport regimes via single- and multiple-donors in nano-channel SOI-FETs IEEE Silicon Nanoelectronics Workshop （2014年6月）招待講演以外 [発表者]D. Moraru,A. Samanta,T. Tsutaya,Y. Takasu,L. T. Anh,M. Manoharan,T. Mizuno,H. Mizuta,M. Tabe [備考] Honolulu, USA [152]. Electron transport in double-donor systems at Si/SiO2 interface in SOI-FETs (poster) IEEE Silicon Nanoelectronics Workshop （2014年6月）招待講演以外 [発表者]A. Samanta,D. Moraru,T. Mizuno,M. Tabe [備考] Honolulu, USA [153]. Study of quantized-energy effects in Si nanoscale lateral pn junction diodes (poster) IEEE Silicon Nanoelectronics Workshop （2014年6月）招待講演以外 [発表者]S. Purwiyanti,H. N. Tan,D. Moraru,L. T. Anh,M. Manoharan,T. Mizuno,H. Mizuta,D. Hartanto,M. Tabe [備考] Honolulu, USA [154]. Electron tunneling operation of single-donor-atom transistors at elevated temperatures (invited - Paper Award presentation) 61st JSAP Spring Meeting （2014年3月）招待講演 [発表者]M. Tabe,E. Hamid,D. Moraru,Y. Kuzuya,T. Mizuno,L. T. Anh,H. Mizuta [備考] Aoyama Gakuin Univ., Sagamihara [155]. Tunneling transport spectroscopy of interacting donors in silicon nano-transistors 61st JSAP Spring Meeting （2014年3月）招待講演以外 [発表者]D. Moraru,A. Samanta,Y. Takasu,T. Tsutaya,L. T. Anh,T. Mizuno,H. Mizuta,M. Tabe [備考] Aoyama Gakuin Univ., Sagamihara [156]. Effect of electric field on single-electron tunneling transport in dopant-atom transistors 61st JSAP Spring Meeting （2014年3月）招待講演以外 [発表者]A. Samanta,D. Moraru,T. Mizuno,M. Tabe [備考] Aoyama Gakuin Univ., Sagamihara [157]. Interband tunneling in Si lateral nano-pn junctions 61st JSAP Spring Meeting （2014年3月）招待講演以外 [発表者]S. Purwiyanti,H. N. Tan,G. Sapteka,D. Moraru,T. Mizuno,D. Hartanto,M. Tabe [備考] Aoyama Gakuin Univ., Sagamihara [158]. Dopant atom devices based on Si nanostructures 7th International Workshop on New Group IV Semiconductor Nanoelectronics & JSPS Core-to-Core Program Joint Seminar “Atomically Controlled Processing for Ultralarge Scale Integration” （2014年1月）招待講演 [発表者]M. Tabe,D. Moraru,E. Hamid,A. Samanta,L. T. Anh,T. Mizuno,H. Mizuta [備考] Tohoku Univ., Sendai [159]. Transport spectroscopy of selectively-doped interacting donors in silicon nano-structures 15th Takayanagi Kenjiro Memorial Symposium, Proceedings, pp. S7-9 （2013年11月）招待講演以外 [発表者]D. Moraru,A. Samanta,L. T. Anh,T. Mizuno,M. Tabe [備考] Shizuoka Univ., Hamamatsu [160]. Electric field effect on single-dopant-atom Si FETs (poster) 15th Takayanagi Kenjiro Memorial Symposium, Proceedings pp. S4-11 （2013年11月）招待講演以外 [発表者]A. Samanta,D. Moraru,T. Mizuno,M. Tabe [備考] Shizuoka Univ., Hamamatsu [161]. Single dopant nature of nano-pn junctions (poster) 15th Takayanagi Kenjiro Memorial Symposium, Proceddings pp. S4-12 （2013年11月）招待講演以外 [発表者]S. Purwiyanti,D. Moraru,T. Mizuno,D. Hartanto,M. Tabe [備考] Shizuoka Univ., Hamamatsu [162]. Surface potential measurement of selectively-doped FETs by KFM (poster) 15th Takayanagi Kenjiro Memorial Symposium, Proceedings pp. S4-13 （2013年11月）招待講演以外 [発表者]K. Tyszka,R. Nowak,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [備考] Shizuoka Univ., Hamamatsu [163]. Transport spectroscopy of selectively doped dopant-based SOI-transistors (poster) Symposium on Directions of Interdisciplinary Domain Research in Japan-Europe Partnership 2013 （2013年11月）招待講演以外 [発表者]A. Samanta,D. Moraru,T. Mizuno,L. T. Anh,H. Mizuta,M. Tabe [備考] Shizuoka [164]. First-principle analysis of electronic states strongly bound to a single phosphorus donor in silicon cross-shaped nanostructures 4th International Workshop on Nanotechnology and Application (IWNA) 2013 （2013年11月）招待講演以外 [発表者]L. T. Anh,Y. Kuzuya,D. Moraru,T. Mizuno,M. Muruganathan,M. Tabe,H. Mizuta [備考] Vung Tau, Viet Nam [165]. Dopant-atom-based tunnel SOI-MOSFETs 224th Electrochemical Society (ECS) Meeting （2013年10月）招待講演 [発表者]M. Tabe,D. Moraru,E. Hamid,A. Samanta,L. T. Anh,T. Mizuno,H. Mizuta [備考] San Francisco, USA [166]. Dopant-atom-based SOI-transistors by selective nanoscale doping International Conference on Solid State Devices and Materials (SSDM) （2013年9月）招待講演以外 [発表者]A. Samanta,D. Moraru,Y. Kuzuya,K. Tyszka,L. T. Anh,T. Mizuno,R. Jablonski,H. Mizuta,M. Tabe [備考] Fukuoka [167]. Transport via dopant-quantum-dots fabricated by thermal diffusion through nano-masks 74th JSAP Autumn Meeting （2013年9月）招待講演以外 [発表者]D. Moraru,A. Samanta,L. T. Anh,T. Mizuno,H. Mizuta,M. Tabe [備考] Doshisha Univ., Kyoto [168]. Transport spectroscopy of dopant states in randomly-doped single-electron transistors 74th JSAP Autumn Meeting （2013年9月）招待講演以外 [発表者]A. Samanta,D. Moraru,E. Hamid,Y. Kuzuya,L. T. Anh,T. Mizuno,H. Mizuta,M. Tabe [備考] Doshisha Univ., Kyoto [169]. KFM measurement of nano-scale selectively doped silicon channel 74th JSAP Autumn Meeting （2013年9月）招待講演以外 [発表者]K. Tyszka,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [備考] Doshisha Univ., Kyoto [170]. Observation of individual dopants in the electrical characteristics of nanoscale pn junctions 74th JSAP Autumn Meeting （2013年9月）招待講演以外 [発表者]S. Purwiyanti,D. Moraru,T. Mizuno,D. Hartanto,M. Tabe [備考] Doshisha Univ., Kyoto [171]. Ab-initio study of interactive-donor states of multiple P-atoms in Si nanoplates 74th JSAP Autumn Meeting （2013年9月）招待講演以外 [発表者]L. T. Anh,A. Samanta,D. Moraru,T. Mizuno,M. Muruganathan,M. Tabe,H. Mizuta [備考] Doshisha Univ., Kyoto [172]. Fabrication of controlled dopant-induced quantum dots by thermal diffusion through nano-masks 12th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) （2013年9月）招待講演以外 [発表者]D. Moraru,A. Samanta,T. Mizuno,M. Tabe [備考] Sofia Univ., Bulgaria [173]. Individual dopants signature in I-V characteristics of nanoscale SOI pn junctions 12th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) （2013年9月）招待講演以外 [発表者]S. Purwiyanti,D. Moraru,R. Nowak,,T. Mizuno,R. Jablonski,D. Hartanto,M. Tabe [備考] Sofia Univ., Bulgaria [174]. Detection of dopant potential in silicon nano-channel by low-temperature Kelvin probe force microscopy 12th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) （2013年9月）招待講演以外 [発表者]M. Tabe,R. Nowak,K. Tyszka,D. Moraru,T. Mizuno,R. Jablonski [備考] Sofia Univ., Bulgaria [175]. Electronic states of pn junction in silicon nanostructure (シリコンナノpn接合の電子状態) JSAP 73rd Autumn National Meeting （2013年9月）招待講演以外 [発表者]Y. Kuzuya,D. Moraru,T. Mizuno,M. Tabe,H. Mizuta [備考] Tokushima Univ. [176]. Individuality of dopants in silicon nano-pn junctions International Symposium on Ultrafast Phenomena in Semiconductors (UFPS 2013) （2013年8月）招待講演以外 [発表者]D. Moraru,S. Purwiyanti,R. Nowak,T. Mizuno,A. Udhiarto,D. Hartanto,R. Jablonski,M. Tabe [備考] Vilnius, Lithuania [177]. Potential profile and photovoltaic effect in nanoscale lateral pn junction observed by Kelvin probe force microscopy 8th International Conference on Si Epitaxy and Heterostructures/6th International Symposium on Control of Semiconductor Interfaces (ISCSI-8/ISCSI-VI 2013) （2013年6月）招待講演以外 [発表者]R. Nowak,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [備考] Fukuoka [178]. Electrical characteristics of donor-induced quantum dots formed in nanoscale selectively-doped SOI-FETs IEEE Silicon Nanoelectronics Workshop （2013年6月）招待講演以外 [発表者]D. Moraru,A. Samanta,Y. Kuzuya,T. Nagasaka,T. Mizuno,M. Tabe [備考] Rihga Royal Hotel, Kyoto [179]. Dopant-induced random telegraph signal in nanoscale pn and pin junctions IEEE Silicon Nanoelectronics Workshop （2013年6月）招待講演以外 [発表者]S. Purwiyanti,R. Nowak,D. Moraru,T. Mizuno,R. Jablonski,D. Hartanto,M. Tabe [備考] Rihga Royal Hotel, Kyoto [180]. Observation of negative differential conductance in nanoscale p-n junctions Quality in Research (QiR) International Conference 2013 （2013年6月）招待講演以外 [発表者]S. Purwiyanti,D. Moraru,T. Mizuno,D. Hartanto,M. Tabe [備考] Yogyakarta, Indonesia [181]. Observation of nanosize effect in nanoscale p-n and p-i-n junction solar cells Quality in Research (QiR) International Conference 2013 （2013年6月）招待講演以外 [発表者]A. Udhiarto,D. Moraru,S. Purwiyanti,T. Mizuno,M. Tabe [備考] Yogyakarta, Indonesia [182]. Single-dopant-atom device for the future of nanoelectronics Quality in Research (QiR) International Conference 2013 （2013年6月）招待講演 [発表者]M. Tabe,D. Moraru,E. Hamid,T. Mizuno [備考] Yogyakarta, Indonesia [183]. Electron-tunneling operation of single-dopant-atom transistors at elevated temperature – Toward room temperature operation IEICE ED/SDM Meeting (IEICE Technical Reports Vol. 113, No. 40, pp. 65-70 (2013)) （2013年5月）招待講演以外 [発表者]D. Moraru,E. Hamid,A. Samanta,L. T. Anh,T. Mizuno,H. Mizuta,M. Tabe [備考] Shizuoka Univ., Hamamatsu [184]. Multiple-donor systems and interaction with photons for diversity of applications Silicon Nanoelectronics for Advanced Applications (II Bilateral Italy-Japan Seminar) （2013年4月）招待講演 [発表者]D. Moraru [備考] Riva del Garda, Italy [185]. Ab initio study of binding energy for single phosphorus donor in silicon nano stub-shaped channel JSAP 60th Spring National Meeting （2013年3月）招待講演以外 [発表者]L. T. Anh,Y. Kuzuya,D. Moraru,T. Mizuno,M. Muruganathan,M. Tabe,H. Mizuta [備考] Kanagawa [186]. Persistence of single-donor effect up to room temperature in SOI-MOSFETs JSAP 60th Spring National Meeting （2013年3月）招待講演以外 [発表者]A. Samanta,E. Hamid,D. Moraru,T. Mizuno,M. Tabe [備考] Kanagawa [187]. Trapping and detrapping of carriers by individual dopants in lateral nanoscale p-n junctions JSAP 60th Spring National Meeting （2013年3月）招待講演以外 [発表者]S. Purwiyanti,D. Moraru,T. Mizuno,D. Hartanto,M. Tabe [備考] Kanagawa [188]. Influence of deep-energy dopants on the electronic potential distribution of two-dimensional pn junctions measured by Kelvin probe force microscope JSAP 60th Spring National Meeting （2013年3月）招待講演以外 [発表者]R. Nowak,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [備考] Kanagawa [189]. Single-electron switching in a triple-donor-atom system in nanoscale SOI-FETs JSAP 60th Spring National Meeting （2013年3月）招待講演以外 [発表者]D. Moraru,J. C. Tarido,E. Hamid,T. Mizuno,M. Tabe [備考] Kanagawa [190]. Individual dopant nature in Si lateral nano-pn junctions IEICE ED/SDM Meeting (IEICE Technical Reports Vol. 112, No. 445 (ED), pp. 25-30 (2013)) （2013年2月）招待講演以外 [発表者]S. Purwiyanti,A. Udhiarto,R. Nowak,D. Moraru,T. Mizuno,D. Hartanto,R. Jablonski,M. Tabe [備考] Hokkaido Univ., Sapporo [191]. Effect of deep-level dopants on the electronic potential of thin Si pn junctions observed by Kelvin probe force microscope International Workshop on Advanced Nanovision Science (IWANS 2013) （2013年1月）招待講演以外 [発表者]R. Nowak,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [備考] RIE, Shizuoka Univ., Hamamatsu [192]. Single dopant transistor – Toward room temperature operation ITRS ERM (International Technology Roadmap for Semiconductors Emerging Research Materials) Workshop （2013年1月）招待講演 [発表者]D. Moraru,M. Tabe [備考] Berkeley, USA [193]. Donor ionization energy and electronic states in Si nano-FETs Korea-Japan Student Workshop （2012年11月）招待講演以外 [発表者]Y. Kuzuya,D. Moraru,T. Mizuno,M. Tabe [備考] Pusan Univ., Korea [194]. Observation of charging and discharging effects of dopant atoms in nanoscale lateral p-n junction by Kelvin Probe Force Microscope 14th Takayanagi Kenjiro Memorial Symposium （2012年11月）招待講演以外 [発表者]R. Nowak,M. Anwar,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [備考] Shizuoka Univ., Hamamatsu [195]. Dopant-based single-photon detection in lateral nanowire p-n junctions 14th Takayanagi Kenjiro Memorial Symposium （2012年11月）招待講演以外 [発表者]S. Purwiyanti,A. Udhiarto,D. Moraru,T. Mizuno,D. Hartanto,M. Tabe [備考] Shizuoka Univ., Hamamatsu [196]. Dopant Atom Devices Based on Si Nanostructures 14th Takayanagi Kenjiro Memorial Symposium （2012年11月）招待講演 [発表者]M. Tabe,D. Moraru,E. Hamid,T. Mizuno [備考] Shizuoka Univ., Hamamatsu [197]. Ab initio study of phosphorus donor states in single dopant transistor with a stub-shaped channel Conference on Computational Physics (CCP 2012) （2012年10月）招待講演以外 [発表者]L. T. Anh,Y. Kuzuya,D. Moraru,T. Mizuno,M. Manoharan,M. Tabe,H. Mizuta [備考] Kobe [198]. Ab initio study of phosphorus donor in silicon nano-structures: wave function analysis of P-doped Si nano disk JSAP 73rd Autumn National Meeting （2012年9月）招待講演以外 [発表者]L. T. Anh,Y. Kuzuya,D. Moraru,T. Mizuno,M. Tabe,H. Mizuta [備考] Tokushima Univ. [199]. Experimental and ab initio study of donor state deepening in nanoscale SOI-MOSFETs IUMRS-ICEM (International Union of Materials Research Societies – International Conference on Electronic Materials) 2012 （2012年9月）招待講演以外 [発表者]D. Moraru,E. Hamid,Y. Kuzuya,T. Mizuno,H. Mizuta,M. Tabe [備考] Yokohama [200]. Photoexcited-electron trapping by single donor in lateral nanowire pn junction International Conference on Solid State Devices and Materials (SSDM) （2012年9月）招待講演以外 [発表者]S. Purwiyanti,A. Udhiarto,D. Moraru,T. Mizuno,M. Tabe [備考] Kyoto [201]. Observation of charging and discharging effects of dopant atoms in nanoscale lateral pn junction by Kelvin probe force microscope International Conference on Solid State Devices and Materials (SSDM) （2012年9月）招待講演以外 [発表者]R. Nowak,M. Anwar,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [備考] Kyoto [202]. Photon detection by individual donor in lateral nanowire pn junction JSAP 73rd Autumn National Meeting （2012年9月）招待講演以外 [発表者]S. Purwiyanti,A. Udhiarto,D. Moraru,T. Mizuno,M. Tabe [備考] Tokushima Univ. [203]. Kelvin probe force microscope observation of nanoscale pn junction depletion layer JSAP 73rd Autumn National Meeting （2012年9月）招待講演以外 [発表者]R. Nowak,M. Anwar,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [備考] Tokushima Univ. [204]. Ionization energy enhancement and high temperature operation of single-dopant transistors JSAP 73rd Autumn National Meeting （2012年9月）招待講演以外 [発表者]E. Hamid,D. Moraru,Y. Kuzuya,T. Mizuno,Le The Anh,H. Mizuta,M. Tabe [備考] Tokushima Univ. [205]. Characterization of nanoscale lateral pn junction by Kelvin probe force microscope 11th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) （2012年8月）招待講演以外 [発表者]R. Nowak,M. Anwar,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [備考] Budapest, Hungary [206]. Deep-energy phosphorus donor atoms in ultrathin-channel silicon transistors 11th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) （2012年8月）招待講演以外 [発表者]D. Moraru,E. Hamid,T. Mizuno,M. Tabe [備考] Budapest, Hungary [207]. Observation of photovoltaic effect and single-photon detection in nanowire silicon pn-junction International Conference on Nano Electronics Research Education (ICNERE 2012) （2012年7月）招待講演以外 [発表者]A. Udhiarto,S. Purwiyanti,D. Moraru,T. Mizuno,M. Tabe [備考] Bali, Indonesia [208]. Observation of tunneling effects in lateral nanowire pn junctions International Conference on Nano Electronics Research Education (ICNERE 2012) （2012年7月）招待講演以外 [発表者]S. Purwiyanti,A. Udhiarto,D. Moraru,T. Mizuno,D. Hartanto,M. Tabe [備考] Bali, Indonesia [209]. Ab initio analysis of donor state deepening in Si nano-channels (poster) IEEE Silicon Nanoelectronics Workshop （2012年6月）招待講演以外 [発表者]D. Moraru,Y. Kuzuya,E. Hamid,T. Mizuno,M. Tabe,H. Mizuta [備考] Honolulu, USA [210]. Single-electron transport through a single donor at elevated temperatures (poster) IEEE Silicon Nanoelectronics Workshop （2012年6月）招待講演以外 [発表者]E. Hamid,D. Moraru,T. Mizuno,M. Tabe [備考] Honolulu, USA [211]. Dopant atoms in silicon nanodevices Villa Conference on Interactions Among Nanostructures (VCIAN 2012), Proceedings pp. 47 （2012年4月）招待講演 [発表者]M. Tabe,D. Moraru,E. Hamid,M. Anwar,R. Nowak,A. Udhiarto,R. Jablonski,T. Mizuno [備考] Orlando, USA [212]. シリコンナノシリコンナノ構造における構造におけるリンドナー電子状態の空間分布 (Spatial distribution of electronic states of single donor in silicon nanostructures) 59th Spring National Meeting （2012年3月）招待講演以外 [発表者]Y. Kuzuya,D. Moraru,T. Mizuno,M. Tabe,H. Mizuta [備考] Waseda Univ., Tokyo [213]. Transport through single donors at elevated temperatures in nanoscale Si transistors 59th Spring National Meeting （2012年3月）招待講演以外 [発表者]E. Hamid,D. Moraru,T. Mizuno,M. Tabe [備考] Waseda Univ., Tokyo [214]. Observation of the photovoltaic effect in pn-junction silicon-on-insulator nanowires 59th Spring National Meeting （2012年3月）招待講演以外 [発表者]A. Udhiarto,S. Purwiyanti,D. Moraru,T. Mizuno,M. Tabe [備考] Waseda Univ., Tokyo [215]. Single-dopant transistors and dopant-based turnstiles (poster) International Seminar on Emerging Nanotechnologies (ISEN 2012) （2012年3月）招待講演以外 [発表者]D. Moraru,E. Hamid,T. Mizuno,M. Tabe [備考] JAIST, Kanazawa [216]. Single-dopant based silicon photonic devices (poster) International Seminar on Emerging Nanotechnologies (ISEN 2012) （2012年3月）招待講演以外 [発表者]A. Udhiarto,D. Moraru,T. Mizuno,M. Tabe [備考] JAIST, Kanazawa [217]. Single-electron transfer between two donors in nanoscale thin silicon-on-insulator field-effect transistors (poster) International Seminar on Emerging Nanotechnologies (ISEN 2012) （2012年3月）招待講演以外 [発表者]E. Hamid,D. Moraru,J. C. Tarido,S. Miki,T. Mizuno,M. Tabe [備考] JAIST, Kanazawa [218]. Electron filling in phosphorus donors embedded in silicon nanostructures observed by KFM technique (poster) International Seminar on Emerging Nanotechnologies (ISEN 2012) （2012年3月）招待講演以外 [発表者]R. Nowak,M. Anwar,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [備考] JAIST, Kanazawa [219]. Electronic potential of lateral nanoscale Si pn junctions observed by KFM technique 59th Spring National Meeting （2012年2月）招待講演以外 [発表者]R. Nowak,M. Anwar,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [備考] Waseda Univ., Tokyo [220]. KFM observation of individual dopant potentials and electron chargin IEICE ED/SDM Meeting (IEICE Technical Reports, Vol. 111, No. 425 (ED), pp. 13-18 (2012)) （2012年2月）招待講演以外 [発表者]R. Nowak,M. Anwar,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [備考] Hokkaido Univ., Sapporo [221]. 第一原理計算によるシリコンナノロッドトランジスタ中の単一リン不純物の電子状態解析 (Ab initio analysis of electronic states for single phosphorus dopants in silicon nanorod transistors) IEICE ED/SDM Meeting (IEICE Technical Reports, Vol. 111, No. 425 (ED), pp. 7-11 (2012)) （2012年2月）招待講演以外 [発表者]Y. Kuzuya,D. Moraru,T. Mizuno,M. Tabe,H. Mizuta [備考] Hokkaido Univ., Sapporo [222]. Single-dopant/interface interaction effects on transport characteristics of silicon nano-transistors International Workshop on Advanced Nanovision Science (IWANS 2012) （2012年1月）招待講演以外 [発表者]D. Moraru,E. Hamid,T. Mizuno,M. Tabe [備考] RIE, Shizuoka University, Hamamatsu [223]. Theoretical analysis of single dopants in silicon nanowire transistors Korea-Japan Student Workshop （2011年11月）招待講演以外 [発表者]Y. Kuzuya,H. Mizuta,D. Moraru,T. Mizuno,M. Tabe [備考] Shizuoka Univ., Hamamatsu [224]. Single-dopant based silicon photonic devices 13th Takayanagi Kenjiro Memorial Symposium （2011年11月）招待講演以外 [発表者]A. Udhiarto,D. Moraru,T. Mizuno,M. Tabe [備考] Shizuoka Univ., Hamamatsu [225]. KFM measurements of individual dopant potentials and effect of annealing 13th Takayanagi Kenjiro Memorial Symposium （2011年11月）招待講演以外 [発表者]R. Nowak,M. Anwar,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [備考] Shizuoka Univ., Hamamatsu [226]. シリコン系シングルドーパントデバイスとフォトン検出 (Silicon-based single-dopant devices and photon sensing) 光電相互変換第１２５委員会 (本委員会第２１４回研究会) – Group IV Photonics Meeting （2011年10月）招待講演 [発表者]M. Tabe,D. Moraru,A. Udhiarto,T. Mizuno [備考] Shizuoka Univ., Hamamatsu [227]. Effect of donor-level deepening in nm-scale Si SOI-MOSFETs 10th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) Abstracts pp. 2 （2011年9月）招待講演以外 [発表者]M. Tabe,D. Moraru,E. Hamid,M. Anwar,R. Nowak,Y. Kuzuya,T. Mizuno [備考] Sucevita, Romania [228]. Temperature evolution of electron transport in single-donor transistors 10th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) Abstracts pp. 5 （2011年9月）招待講演以外 [発表者]D. Moraru,E. Hamid,A. Udhiarto,T. Mizuno,M. Tabe [備考] Sucevita, Romania [229]. Electron filling in phosphorus donors embedded in silicon nanostructures observed by KFM technique 10th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) Abstracts pp. 67 （2011年9月）招待講演以外 [発表者]R. Nowak,M. Anwar,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [備考] Sucevita, Romania [230]. Effect of free carriers on dopant-induced surface potential in SOI-FETs International Conference on Solid State Devices and Materials (SSDM) Extended Abstracts pp. 1235-1236 （2011年9月）招待講演以外 [発表者]M. Anwar,R. Nowak,D. Moraru,R. Jablonski,T. Mizuno,M. Tabe [備考] Nagoya [231]. Donor-location-dependent RTS observed by trapping and detrapping of a photoexcited electron by a single donor International Conference on Solid State Devices and Materials (SSDM) Extended Abstracts pp. 1227-1228 （2011年9月）招待講演以外 [発表者]A. Udhiarto,D. Moraru,T. Mizuno,M. Tabe [備考] Nagoya [232]. Single-dopant devices toward diversity and high temperature operation (単一ドーパントデバイス：多様性と高温動作に向けて) JSAP 72nd Autumn National Meeting (Symposium on Deterministic Doping for Extended CMOS and Single Dopant Devices) （2011年8月）招待講演 [発表者]M. Tabe,D. Moraru,T. Mizuno [備考] Yamagata Univ. [233]. Ab initio simulation of single dopant devices: electronic states and transport (単一ドーパントシミュレーション - ナノ構造内ドーパント原子の状態と電子輸送 -) JSAP 72nd Autumn National Meeting (Symposium on Deterministic Doping for Extended CMOS and Single Dopant Devices) （2011年8月）招待講演 [発表者]D. Moraru,Y. Kuzuya,T. Mizuno,M. Tabe,H. Mizuta [備考] Yamagata Univ. [234]. Role of interface potential well in transport in single-donor transistors JSAP 72nd Autumn National Meeting （2011年8月）招待講演以外 [発表者]D. Moraru,J. C. Tarido,E. Hamid,T. Mizuno,M. Tabe [備考] Yamagata Univ. [235]. Probing donor location by assistance of photons in nano-scale SOI-FETs JSAP 72nd Autumn National Meeting （2011年8月）招待講演以外 [発表者]A. Udhiarto,D. Moraru,T. Mizuno,M. Tabe [備考] Yamagata Univ. [236]. State analysis of Si nanorods transistors with a few dopants (少数ドーパントを有するシリコンナノロッドの状態解析) JSAP 72nd Autumn National Meeting （2011年8月）招待講演以外 [発表者]Y. Kuzuya,D. Moraru,T. Mizuno,M. Tabe,H. Mizuta [備考] Yamagata Univ. [237]. H2 annealing effects on surface potential of As-implanted Si measured by KFM JSAP 72nd Autumn National Meeting （2011年8月）招待講演以外 [発表者]M. Anwar,R. Nowak,Y. Ono,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [備考] Yamagata Univ. [238]. Photon-induced electron trapping by a single donor IEEE Silicon Nanoelectronics Workshop Abstracts pp. 75-76 （2011年6月）招待講演以外 [発表者]A. Udhiarto,D. Moraru,R. Nakamura,T. Mizuno,M. Tabe [備考] Rihga Royal Hotel, Kyoto [239]. Single-electron transfer between two donors via an interface dot IEEE Silicon Nanoelectronics Workshop Abstracts pp. 71-72 （2011年6月）招待講演以外 [発表者]J. C. Tarido,D. Moraru,E. Hamid,T. Mizuno,M. Tabe [備考] Rihga Royal Hotel, Kyoto [240]. Role of channel pattern on the formation of single-dopant transistors Villa Conference on Interactions Among Nanostructures (VCIAN) Abstracts pp. 139-140 （2011年4月）招待講演以外 [発表者]D. Moraru,J. C. Tarido,A. Udhiarto,T. Mizuno,M. Tabe [備考] Las Vegas, USA [241]. Atom devices based on single-dopants in silicon nanostructures Villa Conference on Interactions Among Nanostructures (VCIAN) Abstracts pp. 70 （2011年4月）招待講演 [発表者]M. Tabe,D. Moraru,E. Hamid,J. C. Tarido,M. Anwar,R. Nowak,Y. Kawai,R. Jablonski,T. Mizuno [備考] Las Vegas, USA [242]. Single-electron transfer between two donors in thin nanoscale silicon transistors IEICE ED/SDM Meeting (IEICE Technical Reports (ED) Vol. 110, No. 423, pp. 57-62) （2011年2月）招待講演以外 [発表者]D. Moraru,E. Hamid,J. C. Tarido,S. Miki,R. Nakamura,T. Mizuno,M. Tabe [備考] Hokkaido Univ., Sapporo [243]. Current intermittency due to single photon absorption in doped SOI-FETs IEICE ED/SDM Meeting (IEICE Technical Reports (ED) Vol. 110, No. 423, pp. 67-72) （2011年2月）招待講演以外 [発表者]A. Udhiarto,D. Moraru,T. Mizuno,M. Tabe [備考] Hokkaido Univ., Sapporo [244]. Si single dopant devices International Symposium on Nanoscale Transport and Technology (ISNTT 2011) （2011年1月）招待講演 [発表者]M. Tabe,D. Moraru,E. Hamid,M. Anwar,A. Udhiarto,R. Nowak,S. Miki,R. Nakamura,Y. Kawai,J. C. Tarido,T. Mizuno [備考] NTT Basic Research Labs, Atsugi [245]. Observation of individual dopants in Si channel by low-temperature KFM 18th International Colloquium on Scanning Probe Microscopy Proceedings pp. S10-2i （2010年12月）招待講演 [発表者]M. Tabe,M. Anwar,Y. Kawai,R. Nowak,D. Moraru,R. Jablonski,T. Mizuno [備考] Atami [246]. Single dopant devices: single-electron transport through single dopants 2nd ITRS ERM Deterministic Doping Workshop （2010年11月）招待講演 [発表者]M. Tabe,D. Moraru [備考] Berkeley, USA [247]. Single-electron transport via single and multiple donors in nanoscale Si-FETs 12th Takayanagi Kenjiro Memorial Symposium Proceedings pp. S6-4-1-5 （2010年11月）招待講演以外 [発表者]D. Moraru,J. C. Tarido,R. Nakamura,E. Hamid,T. Mizuno,M. Tabe [備考] Shizuoka Univ., Hamamatsu [248]. Si nanowire p-n junction diodes 7th Korea-Japan Student Workshop （2010年11月）招待講演以外 [発表者]S. Miki,D. Moraru,T. Mizuno,M. Tabe [備考] Pusan Univ., Korea [249]. Single-, double-, and triple-dot arrays in patterned phosphorus-doped nano-FETs JSAP 71st Autumn National Meeting （2010年9月）招待講演以外 [発表者]D. Moraru,R. Nakamura,J. C. Tarido,T. Mizuno,M. Tabe [備考] Nagasaki [250]. KFM observation of single-electron filling in single dopants JSAP 71st Autumn National Meeting （2010年9月）招待講演以外 [発表者]M. Anwar,D. Moraru,M. Ligowski,Y. Kawai,T. Mizuno,R. Jablonski,Y. Ono,M. Tabe [備考] Nagasaki [251]. Sensitivity enhancement of single photon detection by channel patterning in phosphorus-doped SOI-FET JSAP 71st Autumn National Meeting （2010年9月）招待講演以外 [発表者]A. Udhiarto,D. Moraru,S. Miki,R. Nakamura,V. Mizeikis,T. Mizuno,M. Tabe [備考] Nagasaki [252]. Fabrication and characterization of Si nanowire p-n diode JSAP 71st Autumn National Meeting （2010年9月）招待講演以外 [発表者]S. Miki,D. Moraru,T. Mizuno,M. Tabe [備考] Nagasaki [253]. Single-electron trapping in disk-shaped doped nanoscale FETs JSAP 71st Autumn National Meeting （2010年9月）招待講演以外 [発表者]J. C. Tarido,E. Hamid,D. Moraru,R. Nakamura,S. Miki,T. Mizuno,M. Tabe [備考] Nagasaki [254]. Single-electron charging by extension of dopant-induced quantum dot at interfaces under electric field JSAP 71st Autumn National Meeting （2010年9月）招待講演以外 [発表者]E. Hamid,J. C. Tarido,S. Miki,T. Mizuno,D. Moraru,M. Tabe [備考] Nagasaki [255]. Single-photon detection by individual dopants and the effect of channel shape in SOI-FET International Conference on Solid State Devices and Materials (SSDM) Extended Abstracts pp. 774-775 （2010年9月）招待講演以外 [発表者]A. Udhiarto,D. Moraru,R. Nakamura,S. Miki,T. Mizuno,V. Mizeikis,M. Tabe [備考] Tokyo Univ. [256]. KFM observation of single-electron filling in isolated and clustered dopants International Conference on Solid State Devices and Materials (SSDM) Extended Abstracts pp. 97-98 （2010年9月）招待講演以外 [発表者]M. Anwar,D. Moraru,M. Ligowski,T. Mizuno,R. Jablonski,Y. Ono,M. Tabe [備考] Tokyo Univ. [257]. Memory effects based on dopant atoms in nano-FETs 9th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) Proceedings pp. 86-87 （2010年8月）招待講演以外 [発表者]D. Moraru,E. Hamid,J. C. Tarido,S. Miki,T. Mizuno,M. Tabe [備考] Riga, Latvia [258]. Kelvin probe force microscope measurement uncertainty 9th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) Proceedings pp. 211-212 （2010年8月）招待講演以外 [発表者]M. Ligowski,D. Moraru,T. Mizuno,M. Tabe,R. Jablonski [備考] Riga, Latvia [259]. Si-based single-dopant atom devices 9th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) Proceedings pp. 31-32 （2010年8月）招待講演以外 [発表者]M. Tabe,D. Moraru,A. Udhiarto,S. Miki,M. Anwar,Y. Kawai,T. Mizuno [備考] Riga, Latvia [260]. Tunable single-electron turnstile using discrete dopants in nanoscale SOI-FETs International Symposium on Technology Evolution for Silicon Nano-Electronics (ISTESNE) Extended Abstracts pp. 37 （2010年6月）招待講演以外 [発表者]D. Moraru,K. Yokoi,R. Nakamura,T. Mizuno,M. Tabe [備考] Tokyo [261]. KFM observation of electron charging and discharging in phosphorus-doped SOI channel International Symposium on Technology Evolution for Silicon Nano-Electronics (ISTESNE) Extended Abstracts pp. 59 （2010年6月）招待講演以外 [発表者]M. Anwar,Y. Kawai,D. Moraru,T. Mizuno,M. Tabe [備考] Tokyo [262]. Single-photon detection by Si single-electron FETs European Materials Research Society (E-MRS) 2010 Spring Meeting （2010年6月）招待講演 [発表者]M. Tabe,A. Udhiarto,D. Moraru,T. Mizuno [備考] Strasbourg, France [263]. Control of dopant-induced quantum dots by channel geometry IEEE Silicon Nanoelectronics Workshop Abstracts pp. 39-40 （2010年6月）招待講演以外 [発表者]D. Moraru,R. Nakamura,S. Miki,T. Mizuno,M. Tabe [備考] Hilton Hawaiian Village, Honolulu, USA [264]. Single-dopant memory effect in P-doped Si SOI-MOSFETs IEEE Silicon Nanoelectronics Workshop Abstracts pp. 45-46 （2010年6月）招待講演以外 [発表者]E. Hamid,J. C. Tarido,S. Miki,T. Mizuno,D. Moraru,M. Tabe [備考] Hilton Hawaiian Village, Honolulu, USA [265]. Si single-dopant devices and their characterization Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) (IEICE Technical Report, Vol. 110, No. 109, pp. 131-136) （2010年6月）招待講演 [発表者]M. Tabe,D. Moraru,E. Hamid,M. Anwar,A. Udhiarto,R. Nakamura,S. Miki,T. Mizuno [備考] Tokyo [266]. Single photon detection in single dot and multidots channel phosphorus-doped SOI-FET ED/SDM Meeting (IEICE Technical Report, Vol. 110, no. 31, pp. 27-31) （2010年5月）招待講演以外 [発表者]A. Udhiarto,D. Moraru,R. Nakamura,S. Miki,T. Mizuno,M. Tabe [備考] Shizuoka Univ., Hamamatsu [267]. Charging phenomena of a single electron in P-doped SOI-MOSFETs ED/SDM Meeting (IEICE Technical Report, Vol. 110, no. 31, pp. 23-26) （2010年5月）招待講演以外 [発表者]E. Hamid,J. C. Tarido,S. Miki,D. Moraru,T. Mizuno,M. Tabe [備考] Shizuoka Univ., Hamamatsu [268]. Single-dopant control in single-electron transport through arrays of dopants 57th Spring National Meeting （2010年4月）招待講演以外 [発表者]D. Moraru,S. Miki,J. C. Tarido,T. Mizuno,M. Tabe [備考] Tohoku Univ., Sendai [269]. Simulation and experimental study of single electron trapping in doped nanoscale FETs 57th Spring National Meeting （2010年4月）招待講演以外 [発表者]E. Hamid,J. C. Tarido,S. Miki,T. Mizuno,D. Moraru,M. Tabe [備考] Tohoku Univ., Sendai [270]. Observation of Si channel potential by LT-KFM 57th Spring National Meeting （2010年4月）招待講演以外 [発表者]M. Anwar,Y. Kawai,S. Miki,D. Moraru,T. Mizuno,M. Tabe [備考] Tohoku Univ., Sendai [271]. Interaction of single photon and single electron transport in phosphorus-doped SOI-FET 57th Spring National Meeting （2010年4月）招待講演以外 [発表者]A. Udhiarto,D. Moraru,S. Miki,T. Mizuno,M. Tabe [備考] Tohoku Univ., Sendai [272]. Observation of implanted As in Si by low-temperature Kelvin Probe Force Microscope 57th Spring National Meeting （2010年4月）招待講演以外 [発表者]Y. Kawai,M. Anwar,S. Miki,Y. Ono,D. Moraru,T. Mizuno,M. Tabe [備考] Tohoku Univ., Sendai [273]. Single electron transistor characteristics with disk-shaped channel structure 57th Spring National Meeting （2010年4月）招待講演以外 [発表者]R. Nakamura,K. Yokoi,D. Moraru,T. Mizuno,M. Tabe [備考] Tohoku Univ., Sendai [274]. Si single-dopant FETs and observation of single-dopant potential by LT-KFM 5th International Workshop on New Group IV Semiconductor Nanoelectronics Proceedings pp. I-09 （2010年1月）招待講演 [発表者]M. Tabe,D. Moraru,M. Anwar,Y. Kawai,S. Miki,Y. Ono,T. Mizuno [備考] Sendai [275]. Breakthrough of advanced nano-silicon devices 2nd International Conference on Advanced Material and Practice of Nanotechnology (ICAMPN) （2009年11月）招待講演 [発表者]M. Tabe,D. Moraru,M. Anwar,K. Yokoi,R. Nakamura,M. Ligowski,S. Miki,T. Mizuno [備考] Jakarta, Indonesia [276]. Si single electron devices using individual dopants 6th Korea-Japan Student Workshop （2009年10月）招待講演以外 [発表者]S. Miki,D. Moraru,R. Nakamura,M. Ligowski,T. Mizuno,M. Tabe [備考] Shizuoka Univ., Hamamatsu [277]. Si multi-dot FETs using discrete dopants 5th Handai Nanoscience and Nanotechnology International Symposium （2009年9月）招待講演 [発表者]M. Tabe,D. Moraru,M. Ligowski,M. Anwar,K. Yokoi,R. Jablonski,T. Mizuno [備考] Osaka [278]. Single-electron transport through individual dopants in heavily-doped nanoscale FETs JSAP 70th Autumn National Meeting （2009年9月）招待講演以外 [発表者]D. Moraru,M. Ligowski,S. Miki,R. Nakamura,T. Mizuno,M. Tabe [備考] Toyama Univ. [279]. Effect of gate and junction capacitance dispersion on single-electron transfer JSAP 70th Autumn National Meeting （2009年9月）招待講演以外 [発表者]K. Yokoi,D. Moraru,M. Tabe [備考] Toyama Univ. [280]. Possibility of single electron trapping by a single dopant in doped nanoscale FETs JSAP 70th Autumn National Meeting （2009年9月）招待講演以外 [発表者]E. Hamid,J. C. Tarido,S. Miki,M. Anwar,M. Ligowski,T. Mizuno,D. Moraru,M. Tabe [備考] Toyama Univ. [281]. Observation of Single-Electron Charging in Dopant Potential by Kelvin Probe Force Microscope JSAP 70th Autumn National Meeting （2009年9月）招待講演以外 [発表者]M. Anwar,D. Moraru,M. Ligowski,Y. Kawai,S. Miki,T. Mizuno,M. Tabe [備考] Toyama Univ. [282]. Single-Electron Transport Characteristics in Quantum Dot Arrays Due to Ionized Dopants 8th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) （2009年9月）招待講演以外 [発表者]D. Moraru,M. Ligowski,J. C. Tarido,S. Miki,R. Nakamura,K. Yokoi,T. Mizuno,M. Tabe [備考] Kazimierz-Dolny/Warsaw, Poland [283]. Detection of individual dopants in single-electron devices – a study by KFM observation and simulation 8th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) （2009年9月）招待講演以外 [発表者]M. Ligowski,D. Moraru,M. Anwar,J. C. Tarido,T. Mizuno,M. Tabe,R. Jablonski [備考] Kazimierz-Dolny/Warsaw, Poland [284]. Single-electron transport through discrete dopants International Conference on Solid State Devices and Materials (SSDM) Extended Abstracts pp. 260-261 （2009年9月）招待講演以外 [発表者]D. Moraru,M. Anwar,M. Ligowski,S. Miki,R. Nakamura,T. Mizuno,R. Jablonski,M. Tabe [備考] Sendai [285]. Inter-dopant coupling tuning for single-electron transfer IEEE Silicon Nanoelectronics Workshop （2009年6月）招待講演以外 [発表者]D. Moraru,M. Ligowski,K. Yokoi,T. Mizuno,M. Tabe [備考] Rihga Royal Hotel, Kyoto [286]. Single-dopant resolved characteristics in doped-nanowire field-effect transistors IEEE Silicon Nanoelectronics Workshop （2009年6月）招待講演以外 [発表者]M. Ligowski,S. Miki,R. Nakamura,T. Mizuno,D. Moraru,R. Jablonski,M. Tabe [備考] Rihga Royal Hotel, Kyoto [287]. Observation of discrete dopant potential and its application to Si single-electron devices 6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6) （2009年5月）招待講演 [発表者]M. Tabe,D. Moraru,M. Ligowski,M. Anwar,K. Yokoi,R. Jablonski,T. Mizuno [備考] Los Angeles, USA [288]. Inter-dopant coupling modulation in double-gated doped-nanowire FETs JSAP 56th Spring National Meeting （2009年3月）招待講演以外 [発表者]D. Moraru,M. Ligowski,K. Yokoi,M. Tabe [備考] Tsukuba [289]. Single-electron transport characteristics of P and B co-doped SOI-MOSFETs JSAP 56th Spring National Meeting （2009年3月）招待講演以外 [発表者]S. Miki,Y. Kasai,K. Ebisawa,R. Nakamura,T. Mizuno,M. Ligowski,D. Moraru,M. Tabe [備考] Tsukuba [290]. Numerical study of single-electron transfer in multiple tunnel junctions with random junction capacitances JSAP 56th Spring National Meeting （2009年3月）招待講演以外 [発表者]K. Yokoi,D. Moraru,M. Tabe [備考] Tsukuba [291]. Surface potential of thin Si channel measured by low-temperature Kelvin probe force microscope (LT-KFM) JSAP 56th Spring National Meeting （2009年3月）招待講演以外 [発表者]M. Anwar,M. Ligowski,D. Moraru,J. C. Tarido,T. Mizuno,M. Tabe [備考] Tsukuba [292]. Si single-electron SOI-MOSFETs: interplay with individual dopants and photons Fall Meeting of Materials Research Society (MRS) 2008 （2008年12月）招待講演 [発表者]M. Tabe,Z. A. Burhanudin,R. Nuryadi,D. Moraru,M. Ligowski,R. Jablonski,T. Mizuno [備考] Boston, USA [293]. Application and observation of discrete dopant potential for Si single-electron devices International Union of Materials Research Societies International Conference in Asia (IUMRS-ICA) （2008年12月）招待講演 [発表者]M. Tabe,D. Moraru,M. Ligowski,M. Anwar,R. Jablonski,T. Mizuno [備考] Nagoya [294]. Atomic-level tuning of few-dopants arrays for single-electron transfer 10th Takayanagi Kenjiro Memorial Symposium & 5th International Symposium on Nanovision Science (“Nanospace Manipulation of Photons and Electrons for Nanovision Systems”) Proceedings pp. 75-76 （2008年11月）招待講演以外 [発表者]D. Moraru,M. Ligowski,K. Ebisawa,K. Yokoi,T. Mizuno,M. Tabe [備考] Shizuoka Univ., Hamamatsu [295]. Single-electron transfer operation in inhomogeneous arrays of quantum dots introduced by dopants 10th Takayanagi Kenjiro Memorial Symposium & 5th International Symposium on Nanovision Science (“Nanospace Manipulation of Photons and Electrons for Nanovision Systems”) Proceedings pp. 85-86 （2008年11月）招待講演以外 [発表者]K. Yokoi,D. Moraru,M. Ligowski,M. Tabe [備考] Shizuoka Univ., Hamamatsu [296]. Detection of individual dopants by low temperature Kelvin Probe Force Microscope 10th Takayanagi Kenjiro Memorial Symposium & 5th International Symposium on Nanovision Science (“Nanospace Manipulation of Photons and Electrons for Nanovision Systems”) Proceedings pp. 93-94 （2008年11月）招待講演以外 [発表者]M. Ligowski,D. Moraru,R. Jablonski,M. Tabe [備考] Shizuoka Univ., Hamamatsu [297]. Single-electron transfer in silicon nanometer-scale field-effect transistors International Conference on Fundamental and Applied Research in Physics (FARPhys) Abstracts pp. O1 （2008年10月）招待講演以外 [発表者]D. Moraru,M. Ligowski,K. Yokoi,M. Tabe [備考] Al.I. Cuza Univ. Iasi, Romania [298]. Measurement of dopant-induced surface potential in a thin silicon layer by low temperature Kelvin Probe Force Microscope 4th Korean-Japan Student Workshop （2008年10月）招待講演以外 [発表者]M. Ligowski,D. Moraru,M. Anwar,R. Jablonski,T. Mizuno,M. Tabe [備考] Pusan Univ., Korea [299]. Gate tuning of doped-nanowire FETs for single-electron transfer JSAP 69th Autumn National Meeting （2008年9月）招待講演以外 [発表者]D. Moraru,K. Yokoi,K. Ebisawa,Y. Kasai,M. Ligowski,M. Tabe [備考] Nagoya [300]. Numerical study on single-electron turnstile operation by random multidot transistors JSAP 69th Autumn National Meeting （2008年9月）招待講演以外 [発表者]K. Yokoi,D. Moraru,M. Tabe [備考] Nagoya [301]. Single-electron characteristics with dopant ionization noise JSAP 69th Autumn National Meeting （2008年9月）招待講演以外 [発表者]K. Ebisawa,D. Moraru,Y. Kasai,T. Mizuno,M. Tabe [備考] Nagoya [302]. Observation of dopant-potential fluctuation in the channel of SOI-FETs by LT-KFM JSAP 69th Autumn National Meeting （2008年9月）招待講演以外 [発表者]M. Ligowski,D. Moraru,M. Anwar,R. Jablonski,M. Tabe [備考] Nagoya [303]. Electrical manipulation of individual dopants and electrons in silicon nanowire field-effect transistors 7th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) Proceedings pp. 52-58 （2008年9月）招待講演以外 [発表者]D. Moraru,K. Yokoi,M. Ligowski,H. Ikeda,M. Tabe [備考] Pecs, Hungary [304]. Detection of dopant induced potential fluctuations in silicon nanodevices channel by Low Temperature Kelvin Probe Force Microscope 7th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) Proceedings pp. 196-201 （2008年9月）招待講演以外 [発表者]M. Ligowski,M. Anwar,D. Moraru,R. Jablonski,,M. Tabe [備考] Pecs, Hungary [305]. Silicon single-electron devices: device physics, fabrication and measurements 7th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) Proceedings pp. 59-61 （2008年9月）招待講演以外 [発表者]M. Tabe,D. Moraru,M. Ligowski,R. Jablonski,K. Yokoi,K. Ebisawa,Y. Kasai,M. Anwar,H. Ikeda,T. Mizuno [備考] Pecs, Hungary [306]. Single-electron transfer by controlling the dopant-induced quantum dot landscape International Conference on Solid State Devices and Materials (SSDM) Extended Abstracts pp. 1078-1079 （2008年9月）招待講演以外 [発表者]D. Moraru,K. Yokoi,M. Ligowski,M. Tabe [備考] Tsukuba [307]. Dopant freeze-out and potential fluctuations observed by Low Temperature Kelvin Probe Force Microscope International Conference on Solid State Devices and Materials (SSDM) Extended Abstracts pp. 1084-1085 （2008年9月）招待講演以外 [発表者]M. Ligowski,M. Anwar,D. Moraru,R. Jablonski,M. Tabe [備考] Tsukuba [308]. Control of single dopants in the electron conduction path in SOI doped-nanowire FETs IEEE Silicon Nanoelectronics Workshop, Abstracts pp. M1135 （2008年6月）招待講演以外 [発表者]D. Moraru,D. Nagata,K. Yokoi,K. Ebisawa,M. Tabe [備考] Hilton Hawaiian Village, Honolulu, USA [309]. Si bicrystal single-electron FETs IEEE Silicon Nanoelectronics Workshop （2008年6月）招待講演以外 [発表者]Y. Kasai,T. Ishino,D. Moraru,R. Nuryadi,H. Ikeda,M. Tabe [備考] Hilton Hawaiian Village, Honolulu, USA [310]. Effects of assistant electrons on single-electron transfer in random multidot arrays JSAP 55th Spring National Meeting （2008年3月）招待講演以外 [発表者]D. Moraru,K. Yokoi,H. Ikeda,M. Tabe [備考] Chiba Univ. [311]. Fabrication and characterization of SOI-MOSFETs with homogeneous multiple dots JSAP 55th Spring National Meeting （2008年3月）招待講演以外 [発表者]K. Ebisawa,D. Moraru,R. Nuryadi,H. Ikeda,M. Tabe [備考] Chiba Univ. [312]. Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer ED/SDM Meeting (IEICE Technical Report, Vol. 107, no. 473, pp. 17-22) （2008年1月）招待講演以外 [発表者]D. Moraru,D. Nagata,K. Yokoi,H. Ikeda,M. Tabe [備考] Hokkaido Univ., Sapporo [313]. Numerical investigation of 1D and 2D quantum dot arrays with design optimized for single-electron transfer operation 3rd Korean-Japan Student Workshop （2007年11月）招待講演以外 [発表者]D. Moraru,K. Yokoi,H. Ikeda,M. Tabe [備考] Shizuoka Univ., Hamamatsu [314]. Si single-electron devices: interaction with individual dopants and photons 5th International Symposium on Control of Semiconductor Interfaces （2007年11月）招待講演 [発表者]M. Tabe,R. Nuryadi,D. Moraru,Z. A. Burhanudin,H. Ikeda [備考] Tokyo [315]. Manipulation of individual electrons in doped silicon nanostructures 9th Takayanagi Kenjiro Memorial Symposium & 4th International Symposium on Nanovision Science (“Nanospace Manipulation of Photons and Electrons for Nanovision Systems”) Proceedings pp. 77-78 （2007年10月）招待講演以外 [発表者]D. Moraru,D. Nagata,K. Ebisawa,K. Yokoi,H. Ikeda,M. Tabe [備考] Shizuoka Univ., Hamamatsu [316]. Numerical study on single-electron transfer operation in non-homogeneous quantum-dot arrays 9th Takayanagi Kenjiro Memorial Symposium & 4th International Symposium on Nanovision Science (“Nanospace Manipulation of Photons and Electrons for Nanovision Systems”) Proceedings pp. 109-110 （2007年10月）招待講演以外 [発表者]K. Yokoi,D. Moraru,H. Ikeda,M. Tabe [備考] Shizuoka Univ., Hamamatsu [317]. Single-electron transfer mechanism in non-homogeneous 1D quantum-dot arrays JSAP 68th Autumn National Meeting （2007年9月）招待講演以外 [発表者]D. Moraru,K. Yokoi,H. Ikeda,M. Tabe [備考] Sapporo, Hokkaido Univ. [318]. Manipulation of single electrons in Si nanodevices – interplay with photons and ions 7th International Conference on Mechatronics （2007年9月）招待講演 [発表者]M. Tabe,R. Nuryadi,Z. A. Burhanudin,D. Moraru,K. Yokoi,H. Ikeda [備考] Warsaw, Poland [319]. Design control of random dopant-induced multiple-tunnel-junction arrays for turnstile operation International Conference on Solid State Devices and Materials (SSDM) Extended Asbtracts pp. 1138-1139 （2007年9月）招待講演以外 [発表者]D. Moraru,K. Yokoi,H. Ikeda,M. Tabe [備考] Tsukuba [320]. Single-electron transfer through purposely designed dopant arrays in silicon 6th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) Abstracts pp. 129 （2007年9月）招待講演以外 [発表者]D. Moraru,K. Yokoi,H. Ikeda,M. Tabe [備考] Hamamatsu [321]. Single-electron devices: interaction with individual dopants 9th Takayanagi Kenjiro Memorial Symposium & 4th International Symposium on Nanovision Science (“Nanospace Manipulation of Photons and Electrons for Nanovision Systems”) Proceedings pp. 67-70 （2007年9月）招待講演以外 [発表者]M. Tabe,R. Nuryadi,D. Moraru,Z. A. Burhanudin,H. Ikeda [備考] Shizuoka Univ., Hamamatsu [322]. Si multidot FETs for single-electron transfer and single-photon detection 13th International Symposium on Ultrafast Phenomena in Semiconductors （2007年8月）招待講演 [発表者]M. Tabe,R. Nuryadi,D. Moraru,Z. A. Burhanudin,K. Yokoi,H. Ikeda [備考] Vilnius, Lithuania [323]. Effects of parameter randomness on quantized-electron transfer in 1D multiple-tunnel-junction arrays IEEE Silicon Nanoelectronics Workshop, Abstracts pp. 163-164 （2007年6月）招待講演以外 [発表者]D. Moraru, Y. Ono,H. Inokawa,K. Yokoi,H. Ikeda,M. Tabe [備考] Kyoto, Rihga Royal Hotel [324]. Time-controlled single-gate single-electron transfer in random multiple-tunnel-junctions JSAP 54th Spring National Meeting （2007年3月）招待講演以外 [発表者]D. Moraru,Y. Ono,H. Inokawa,K. Yokoi,R. Nuryadi,H. Ikeda,M. Tabe [備考] Sagamihara [325]. Phosphorus freeze-out effect of SOI-MOSFETs with thin top Si layer JSAP 54th Spring National Meeting （2007年3月）招待講演以外 [発表者]D. Nagata,K. Ebisawa,D. Moraru,M. Tabe [備考] Sagamihara [326]. Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays ED/SDM Meeting (IEICE Technical Report, Vol. 106, no. 520, pp. 83-88) （2007年2月）招待講演以外 [発表者]D. Moraru,Y. Ono,H. Inokawa,K. Yokoi,R. Nuryadi,H. Ikeda,M. Tabe [備考] Sapporo, Hokkaido Univ. [327]. Single-electron transfer in Coulomb blockade devices based on asymmetry-induced ratchet mechanism inter-Academia & COE Young Researcher Workshop (iAY-2007 & COEY-2007) Proceedings pp. 37-38 （2007年2月）招待講演以外 [発表者]D. Moraru,Y. Ono,H. Inokawa,K. Yokoi,H. Ikeda,M. Tabe [備考] Shizuoka Univ., Hamamatsu [328]. An analytical calculation of single-electron pump operation in MTJ arrays inter-Academia & COE Young Researcher Workshop (iAY-2007 & COEY-2007) Proceedings pp. 71-72 （2007年2月）招待講演以外 [発表者]K. Yokoi,D. Moraru,M. Tabe [備考] Shizuoka Univ., Hamamatsu [329]. Thermal agglomeration of ultrathin (110) silicon-on-insulator layer in ultrahigh vacuum International Microprocesses and Nanotechnology Conference, Digest pp. 380-381 （2006年10月）招待講演以外 [発表者]Y. J. Fan,Z. A. Burhanudin,D. Moraru,R. Nuryadi,M. Tabe [備考] Kamakura [330]. Observation of single-electron pump operation with one ac gate bias in phosphorous-doped Si wires International Conference on Solid State Devices and Materials (SSDM) Extended Abstracts pp. 820-821 （2006年9月）招待講演以外 [発表者]D. Moraru,Y. Ono,H. Inokawa,K. Yokoi,R. Nuryadi,H. Ikeda,M. Tabe [備考] Yokohama [331]. Towards single-electron pump operation using one ac gate bias in doped Si nanowires 5th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) Proceedings, vol. II, pp. 373-380 （2006年9月）招待講演以外 [発表者]D. Moraru,Y. Ono,H. Inokawa,K. Yokoi,R. Nuryadi,H. Ikeda,M. Tabe [備考] Iasi, Romania [332]. Single-electron transfer through multiple tunnel junctions in phosphorous-doped Si nanowires JSAP 67th Autumn National Conference （2006年8月）招待講演以外 [発表者]D. Moraru,Y. Ono,H. Inokawa,K. Yokoi,R. Nuryadi,H. Ikeda,M. Tabe [備考] Kyoto, Ritsumeikan Univ. [333]. Thermally-induced formation of Si island array on an ultrathin (110) silicon-on-insulator substrate JSAP 67th Autumn National Conference （2006年8月）招待講演以外 [発表者]Y. J. Fan,Z. A. Burhanudin,D. Moraru,R. Nuryadi,M. Tabe [備考] Ritsumeikan Univ., Kyoto [334]. Tunneling current oscillations in Si/SiO2/Si structures ED/SDM Meeting (IEICE Technical Report, Vol. 106, no. 45, pp. 113-117) （2006年5月）招待講演以外 [発表者]D. Moraru,D. Nagata,S. Horiguchi,R. Nuryadi,H. Ikeda,M. Tabe [備考] Toyohashi Institute of Technology [335]. Temperature dependence of Fowler-Nordheim current oscillations in Si/SiO2/Si systems JSAP 53rd Spring National Conference （2006年3月）招待講演以外 [発表者]D. Moraru,D. Nagata,M. Tabe [備考] Tokyo [336]. Fowler-Nordheim current oscillations in Si(111)/SiO2/twisted-Si(111) tunneling structures International Conference on Solid State Devices and Materials (SSDM) Extended Abstracts pp. 178-179 （2005年9月）招待講演以外 [発表者]D. Moraru,H. Kato,S. Horiguchi,Y. Ishikawa,H. Ikeda,M. Tabe [備考] Kobe [337]. Single-Photon Detection by Silicon Single-Charge-Tunneling Devices 4th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) （2005年9月）招待講演以外 [発表者]M. Tabe, R. Nuryadi,Y. Ishikawa,H. Ikeda,Z. A. Burhanudin,D. Moraru [備考] Wuppertal, Germany [338]. Fowler-Nordheim oscillatory behavior in single-crystalline-Si/SiO2/single-crystalline-Si bonded structures JSAP 52nd Spring National Conference （2005年4月）招待講演以外 [発表者]D. Moraru,H. Kato,Y. Ishikawa,M. Tabe [備考] Tokyo [339]. Interference effect of tunneling electrons in single-crystalline-Si/SiO2/single-crystalline-Si diodes 1st International Symposium on Nanovision Science (“Nanospace Manipulation of Photons and Electrons for Nanovision Systems”) Proceedings pp. 69-70 （2005年2月）招待講演以外 [発表者]D. Moraru,H. Kato,Y. Ishikawa,M. Tabe [備考] Shizuoka University, Hamamatsu

[1]. Study of organic and hybrid electronics based on solution-based deposition
ISFAR-SU2024 （2024年3月6日）招待講演以外
[発表者]Daris Alfafa, Arief Udhiarto, Daniel Moraru
[URL]
[備考] Shizuoka University
[2]. Analysis of light-induced current noise in codoped silicon nano-transistors
ISFAR-SU2024 （2024年3月6日）招待講演以外
[発表者]Shogo Miyagawa, Pooja Sudha, Arup Samanta, Daniel Moraru
[URL]
[備考] Shizuoka University
[3]. Study of metal-nanofilm coating of Kelvin force microscope cantilevers for measurements of potential in nanodevices
ISFAR-SU2024 （2024年3月6日）招待講演以外
[発表者]Takuya Suzuki, Hayato Kawanishi, Daris Alfafa, Daniel Moraru
[URL]
[備考] Shizuoka University
[4]. Quantum Tunneling Functionalities based on Silicon Nanomaterials and Nanodevices
International Conference on Advanced Functional Materials and Devices (ADMD-2024) （2024年2月29日）招待講演
[発表者]Daniel Moraru
[URL]
[備考] SRM Institute of Science and Technology
[5]. Study of codoped silicon-on-insulator thin films for nano-transistor functionality
25th Takayanagi Kenjiro Memorial Symposium （2023年11月28日）招待講演以外
[発表者]R. Asai, S. Masui, S. Miyagawa, D. Alfafa, and D. Moraru
[URL]
[備考] Poster
[6]. Study of the effects of the codoped region in silicon-on-insulator nanoscale pn diodes
25th Takayanagi Kenjiro Memorial Symposium （2023年11月28日）招待講演以外
[発表者]S. Masui, R. Asai, B. A. Rianto, Y. Sasaki, and D. Moraru
[URL]
[備考] Poster
[7]. Single-electron tunneling via random dopants in silicon nanodevices
6th Autumn School on Physics of Advanced Materials (PAMS-6) （2023年10月20日）招待講演
[発表者]D. Moraru
[URL]
[備考] Sharm El-Sheikh, Egypt & online
[8]. A proposal for silicon-based ultra-sensitive THz detector
15th International Conference on Physics of Advanced Materials (ICPAM-15) （2023年10月20日）招待講演以外
[発表者]P. Sudha, D. Moraru, and A. Samanta
[URL]
[備考] Sharm El-Sheikh, Egypt & online (oral presentation)
[9]. From silicon nanodevices to silicon/carbon-nanotube hybrid nanodevices: a comparative analysis
15th International Conference on Physics of Advanced Materials (ICPAM-15) （2023年10月20日）招待講演
[発表者]D. Moraru, H. Kawanishi, D. Alfafa, M. Shimomura, and A. Udhiarto
[URL]
[備考] Sharm El-Sheikh, Egypt & online Plenary Talk
[10]. Comparative evaluation of electrical properties of carbon nanotube networks deposited on CMOS-compatibel platform
20th International Conference on Global Research and Education (Inter-Academia) （2023年9月27日）招待講演以外
[発表者]H. Kawanishi, R. S. Singh, V. N. Ramakrishnan, M. Shimomura, and D. Moraru
[URL]
[備考] Best Poster Presentation Student Award at the Inter-Academia Conference – H. Kawanishi
[11]. Analysis of the resistance of silicon nanoscale structures highly doped in different configurations
20th International Conference on Global Research and Education (Inter-Academia) （2023年9月27日）招待講演以外
[発表者]S. Miura, R. Asai, Y. Sasaki, and D. Moraru
[URL]
[備考] Poster
[12]. Fabrication and characterization of silicon tunnel diodes doped by short-time rapid thermal annealing
20th International Conference on Global Research and Education (Inter-Academia) （2023年9月27日）招待講演以外
[発表者]Y. Sasaki, S. Masui, S. Miura, and D. Moraru
[URL]
[備考] Poster
[13]. Challenges and Progress in the Fabrication of Silicon Nanowire Tunnel Diodes
5th International Conference on Nano Electronics Research and Education (ICNERE) （2023年7月31日）招待講演
[発表者]D. Moraru
[URL]
[備考] Invited Talk at ICNERE 2023 (Labuan Bajo, Indonesia)
[14]. Modification and ablation of thin silicon-on-insulator films by fs-laser
IEEE Silicon Nanoelectronics Workshop （2023年6月11日）招待講演以外
[発表者]D. Moraru, T. Kaneko, D. Smith, T. Katkus, S. H. Ng, and S. Juodkazis
[URL]
[備考] Rihga Royal Hotel, Kyoto, IEEE/JSAP Societies
[15]. Inkjet-printed carbon nanotubes on silicon nano-gaps: an analysis of electrical characteristics
7th International Conference on Nanoscience and Nanotechnology (ICONN 2023) （2023年3月28日）招待講演以外
[発表者]Rohit S. Singh, H. Kawanishi, T. Kaneko, K. Takagi, T. Aoki, Y. Neo, H. Mimura, M. Shimomura, and D. Moraru
[備考] Oral presentation (virtual) SRM Institute of Science and Technology (Chennai, INDIA)
[16]. Single-electron tunneling through dopants in thin-Si devices
MCN Nanofabulous Seminar （2023年3月2日）招待講演以外
[発表者]D. Moraru
[備考] Melbourne Centre for Nanofabrication (MCN)
[17]. Study of current paths through carbon nanotube bundles deposited by inkjet printing
The 24th Takayanagi Kenjiro Memorial Symposium （2022年11月29日）招待講演以外
[発表者]R. S. Singh, K. Takagi, T. Aoki, J. Moon, Y. Neo, H. Mimura, and D. Moraru
[備考] Poster
[18]. Design and Optimization of Vertical GaN based Power MOSFETs for Converter Applications
The 24th Takayanagi Kenjiro Memorial Symposium （2022年11月29日）招待講演以外
[発表者]Ramakrishnan V N, Reena D, Nilesh Kumar, Nithish Kumar V, D Moraru
[備考] Poster
[19]. Fabrication of carbon nanotube transistor by inkjet printing
The 7th International Symposium on Biomedical Engineering (ISBE2022) （2022年11月25日）招待講演以外
[発表者]R. S. Singh, K. Takagi, T. Aoki, J. Moon, Y. Neo, H. Mimura, and D. Moraru
[備考] Online, poster
[20]. Analog/RF performance analysis of GaSb-InP vertical Tunnel Field Effect Transistors
13th Annual ISAJ Symposium2022 （2022年11月18日）招待講演以外
[発表者]Ramakrishnan V N, Ramkumar K, D. Moraru
[備考] Embassy of India Poster
[21]. Siナノエサキダイオードの空乏層におけるエネルギー準位を介したトンネル電流の研究
第83回応用物理学会秋季学術講演会（2022年9月22日）招待講演以外
[発表者]田村悠太,モラル・ダニエル
[備考] 開催場所：東北大学主催団体：応用物理学会
[22]. 共ドープSiナノトランジスタの単一電子トンネリングに対するバックゲート電圧の影響
第83回応用物理学会秋季学術講演会（2022年9月22日）招待講演以外
[発表者]金子義,ジュパリ・タルナ・テジャ,モラル・ダニエル
[備考] 開催場所：東北大学主催団体：応用物理学会
[23]. Single-charge tunneling functionalities in co-doped silicon nanostructures for dopant-based electronics
14th International Conference on Physics of Advanced Materials (ICPAM-14) （2022年9月11日）招待講演
[発表者]D. Moraru
[備考] Dubrovnik, Croatia - Virtual
[24]. Fabrication and characterization of inkjet-printed carbon nanotube-based transistor
14th International Conference on Physics of Advanced Materials (PAMS-5) （2022年9月）招待講演以外
[発表者]Rohitkumar S. Singh, K. Takagi, T. Aoki, J. Moon, Y. Neo, H. Mimura, and D. Moraru
[備考] Dubrovnik, Croatia - Virtual Poster
[25]. Deposition and manipulation of carbon nanotube bundles on a CMOS-compatible platform
14th International Conference on Physics of Advanced Materials (ICPAM-14) （2022年9月）招待講演以外
[発表者]R. S. Singh, K. Takagi, T. Aoki, J. Moon, Y. Neo, F. Iwata, H. Mimura, and D. Moraru
[備考] Dubrovnik, Croatia - Virtual Best oral presentation given by a young scientist
[26]. Transport of electrons one by one through dopants in thin-Si devices
The 29th International Conference on Amorphous and Nano-crystalline Semiconductors (ICANS29) （2022年8月25日）招待講演
[発表者]Daniel Moraru
[備考] Nanjing University, Nanjing, CHINA (Online)
[27]. Towards Practical Implementation of Single-Electron Tunneling via Donor-Induced Quantum Dots in Silicon Nanodevices
Physics and Its Applications （2022年7月21日）招待講演
[発表者]D. Moraru
[備考] San Francisco, Online
[28]. Single-electron tunneling through multiple-donor QDs in high-concentration co-doped Si nanoscale transistors
シリコン材料・デバイス研究会（SDM）/電子デバイス研究会（ED）（2022年5月27日）招待講演以外
[発表者]T. T. Jupalli, T. Kaneko, C. Pandy, and D. Moraru
[備考] 電子情報通信学会オンライン開催
[29]. 高濃度共ドープしたSiナノトランジスタの単一電子トンネリング評価
The 69th JSAP Spring Meeting 2022 （2022年3月23日）招待講演以外
[発表者]金子義，タルナ・テジャ・ジュパリ, 三浦舜平, 山口謙祐, モラル・ダニエル
[備考] Sagamihara Campus Aoyama Gakuin University, Online, Oral presentation
[30]. Study of single-electron tunneling in Si nano-transistors in different doping concentration regimes for room-temperature operation
The 69th JSAP Spring Meeting 2022 （2022年3月23日）招待講演以外
[発表者]T. T. Jupalli, A. Debnath, Y. Ono, and D. Moraru
[備考] Sagamihara Campus Aoyama Gakuin University, Online, Oral presentation
[31]. Theoretical analysis on the effect of coupling between dopants and leads in Si nanodiodes for band-to-band tunneling enhancement
The 69th JSAP Spring Meeting 2022 （2022年3月23日）招待講演以外
[発表者]C. Pandy, K. Yamaguchi, Y. Neo, H. Mimura, and D. Moraru
[備考] Sagamihara Campus Aoyama Gakuin University, Online, Oral presentation
[32]. Inkjet printing of carbon nanotube array at low density for CMOS-compatible fabrication of nanoscale transistors
The 69th JSAP Spring Meeting 2022 （2022年3月22日）招待講演以外
[発表者]Rohitkumar S. Singh, K. Takagi, T. Aoki, J. Moon, Y. Neo, D. Moraru, and H. Mimura
[備考] The 69th JSAP Spring Meeting 2022, Poster presentation
[33]. Study of single-electron tunneling transport in high-concentration co-doped SOI-FETs
The 8th International Symposium toward the Future of Advanced Researches in Shizuoka University (ISFAR-SU 2022 ) （2022年3月1日）招待講演以外
[発表者]T. Teja. Jupalli, T. Kaneko, S. Miura, C. Pandy, D. Moraru
[備考] Shizuoka University, Zoom distribution
[34]. Study of deposition and manipulation of carbon-nanotube arrays at low density
The 8th International Symposium toward the Future of Advanced Researches in Shizuoka University (ISFAR-SU 2022 ) （2022年3月1日）招待講演以外
[発表者]R. Singh, K. Takahashi, K. Takagi, T. Aoki, J. H. Moon, Y. Neo, F. Iwata, D. Moraru, H. Mimura
[備考] Shizuoka University, Zoom distribution
[35]. Theoretical study of the impact of a front-end dopant pair on tunneling current in Si nanodiodes
The 8th International Symposium toward the Future of Advanced Researches in Shizuoka University (ISFAR-SU 2022 ) （2022年3月1日）招待講演以外
[発表者]C. Pandy, K. Yamaguchi, Y. Neo, H. Mimura, D. Moraru
[備考] Shizuoka University, Zoom distribution
[36]. Probing of deep states by band-to-band tunneling in nanoscale silicon-on-insulator Esaki diodes
The 19th International Conference on Global Research and Education in Engineering for Sustainable Future (Inter-Academia 2021) （2021年10月21日）招待講演以外
[発表者]D. Moraru, Y. Tamura, Y. Iwatsuki, K. Yamaguchi
[備考] Francisk Skorina Gomel State University, Gomel, BELARUS (Virtual conference)
[37]. First-principles study of bandgap electronic states under electric field in silicon nanowires with discrete dopants
The 19th International Conference on Global Research and Education in Engineering for Sustainable Future (Inter-Academia 2021) （2021年10月21日）招待講演以外
[発表者]K. Yamaguchi, M. Tabe, D. Moraru
[備考] Poster presentation Francisk Skorina Gomel State University, Gomel, BELARUS (Virtual conference)
[38]. Theoretical study of the impact of a donor-acceptor pair on tunneling current in Si nanodiodes
The 19th International Conference on Global Research and Education in Engineering for Sustainable Future (Inter-Academia 2021) （2021年10月21日）招待講演以外
[発表者]C. Pandy, K. Yamaguchi, Y. Neo, H. Mimura, M. Tabe, D. Moraru
[備考] Poster presentation Francisk Skorina Gomel State University, Gomel, BELARUS (Virtual conference)
[39]. Silicon electronics at atomic and molecular scales
13th International Conference on Physics of Advanced Materials (ICPAM-13) （2021年9月）招待講演
[発表者]D. Moraru
[備考] Hotel Eden Roc, Sant Feliu de Guixols, SPAIN (Virtual conference)
[40]. Statistical analysis of likelihood of donor-induced quantum dots in Si nano-transistors at different concentrations
13th International Conference on Physics of Advanced Materials (ICPAM-13) （2021年9月）招待講演以外
[発表者]T. T. Jupalli, A. Debnath, G. Prabhudesai, D. Moraru
[備考] Hotel Eden Roc, Sant Feliu de Guixols, SPAIN (Virtual conference)
[41]. Measurements of single-electron tunneling through atoms in nanoscale devices
Physics of Advanced Materials School (PAMS-4) （2021年9月）招待講演
[発表者]D. Moraru
[備考] Hotel Eden Roc, Sant Feliu de Guixols, SPAIN (Virtual conference)
[42]. Looking for Atomic and Molecular Functionalities in Silicon Nanoscale Devices
At home with nano （2021年4月1日）招待講演
[発表者]D. Moraru
[備考] Center at Trinity College ( Dublin, IRELAND) Webinar
[43]. Study of single-electron tunneling transport through coupled-donor molecule in low-doped SOI-FETs towards elevated temperature
7th International Symposium toward the Future of Advanced Researches in Shizuoka University (ISFAR-SU) （2021年3月5日）招待講演以外
[発表者]A. Debnath , T Teja Jupalli, C. Pandy, D. Moraru
[備考] Zoom Webinar
[44]. Electron transport in silicon nano-devices at atomic and molecular-level scales
2nd International Conference on Microelectronic Devices, Circuits and Systems (ICMDCS2021) （2021年2月11日）招待講演
[発表者]D. Moraru
[備考] Virtual Conference Vellore Institute of Technoloy (Vellore, INDIA)
[45]. Study of Electrical Characteristics of Codoped Si-Nanoscale Transistors
6th International Conference on Nanoscience and Nanotechnology (ICONN2021) （2021年2月2日）招待講演以外
[発表者]C. Pandy, G. Prabhudesai, K. Yamaguchi, V. N. Ramakrishnan, Y. Neo, H. Mimura, D. Moraru
[備考] Poster presentation (virtual) SRM Institute of Science and Technology (Chennai, INDIA)
[46]. Band-to-Band Tunneling in Highly-Doped Silicon-on-Insulator Nanoscale Esaki Diodes
6th International Conference on Nanoscience and Nanotechnology (ICONN2021) （2021年2月1日）招待講演
[発表者]D. Moraru, G. Prabhudesai
[備考] SRM Institute of Science and Technology (Chennai, INDIA) Virtual Conference
[47]. Study of Randomly-Formed Interacting Quantum Dots in Highly-Doped Si Junctionless Transistors
6th International Conference on Nanoscience and Nanotechnology (ICONN2021) （2021年2月1日）招待講演以外
[発表者]T. Teja. Jupalli, G. Prabhudesai, A. Debnath, P. Jeevan Kumar, D. Moraru
[備考] Poster presentations (virtual) SRM Institute of Science and Technology (Chennai, INDIA)
[48]. Coulomb-Blockade Charge-Transport Mechanism in Band-to Band Tunneling in Heavily-Doped Low-Dimensional Silicon Esaki Diodes
IEEE Silicon Nanoelectronics Workshop 2020 (SNW 2020) （2020年6月13日）招待講演以外
[発表者]G. Prabhudesai, K. Yamaguchi, M. Tabe, D. Moraru
[備考] Virtual
[49]. A Study of Single-Electron Tunneling Functionalities in Highly-Doped Silicon-on-Insulator Junctionless Transistors
IEEE Silicon Nanoelectronics Workshop 2020 (SNW2020) （2020年6月13日）招待講演以外
[発表者]T. Teja Jupalli, G. Prabhudesai, M. Hasan, A. Debnath, P. Jeevan Kumar, M. Tabe, D. Moraru
[備考] Virtual
[50]. Effects of Co-doping on the Transport Characteristics of Nanoscale n-type Silicon-on-Insulator Transistors
IEEE Silicon Nanoelectronics Workshop 2020 (SNW2020) （2020年6月13日）招待講演以外
[発表者]C. Pandy, A. Debnath, K. Yamaguchi, T. Teja Jupalli, G. Prabhudesai, Ramakrishnan V N, Y. Neo, H. Mimura, D. Moraru
[備考] Virtual
[51]. ナノスケール・シリコンにおける電子・電子散乱を利用したエレクトロン・アスピレーター
第67回応用物理学会春季学術講演会（2020年3月13日）招待講演
[発表者]小野行徳, ヒンマフィルダス, 渡邉時暢, 堀匡寛, ダニエルモラル, 高橋庸夫, 藤原聡
[備考] 上智大学四谷キャンパス
[52]. Novel dopant-mediated charge transport mecanisms in nanoscale Si Esaki diodes
The 6th International Symposium toward the Future of Advanced Researches in Shizuoka University (ISFAR-SU2020) （2020年3月5日）招待講演以外
[発表者]G. Prabhudesai, K. Yamaguchi, M. Tabe, D. Moraru
[備考] Shizuoka University
[53]. Electrical characteristics of heavily-doped junctionless nanoscale silicon-on-insulator transistors with single-electron tunneling functionalities
The 6th International Symposium toward the Future of Advanced Researches in Shizuoka University (ISFAR-SU2020) （2020年3月5日）招待講演以外
[発表者]T. T. Jupalli, G. Prabhudesai, A. Debnath, D. Moraru
[備考] Shizuoka University
[54]. Study of single-electron tunneling through competitive parallel paths via donor-atoms in Si nano-transistors
The 6th International Symposium toward the Future of Advanced Researches in Shizuoka University (ISFAR-SU2020) （2020年3月5日）招待講演以外
[発表者]A. Debnath, M. Hasan, T. T. Jupalli, G. Prabhudesai, D. Moraru
[備考] Shizuoka University
[55]. Study of Single-Election Tunneling Single-1dopant Percolation Paths in Nanoscale-SI Transistors
Inter-Academia Asia 2019 （2019年12月3日）招待講演以外
[発表者]A. Debnath, G. Prabhudesai, T. Teja Jupalli, R. Tsujimura, D. Moraru
[備考] Hotel Associa Shizuoka,Shizuoka
[56]. Electron aspirator using electron-electron scattering in nanoscale silicon
The 21st Takayanagi Kenjiro Memorial Symposium （2019年11月12日）招待講演
[発表者]H. Firdaus, T. Watanabe, M. Hori, D. Moraru, Y. Takahashi, A. Fujiwara, Y. Ono
[備考] Shizuoka University
[57]. Control and Observation of Single-electron Tunneling via Dopants in Si Nanoscale Devices
The 1st International Symposium on Single Atom Electronics （2019年10月13日）招待講演
[発表者]D. Moraru
[備考] Shanghai Jiao Tong University Minhang Campus, Shanghai, China
[58]. Single-electron tunneling percolation in dopant-atom networks formed in sillicon nanoscale transistors
Inter-Academia2019 （2019年9月）招待講演以外
[発表者]D. Moraru, M. Hasan, A. Debnath, A. Afiff, G. Prabhudesai
[備考] Danubius Hotel Gellert, Budapest, Hungary Hotel Annabella Beach Resort, Balatonfured, Hungary
[59]. Ab initio study of the effect ofelectric field on a donor-acceptor pair in Si nanostructures
Inter-Academia2019 （2019年9月）招待講演以外
[発表者]K. Yamaguchi, G. Prabhudesai, M. Muruganathan, H. Mizuta, M. Tabe, D. Moraru
[備考] Danubius Hotel Gellert, Budapest, HUNGARY Hotel Annabella Beach Resort, Balatonfured, Hungary
[60]. Research on single-charge tunneling via multiple-dopant quantum dots in Si nanodevices
広島大学ワークショップ（2019年6月26日）招待講演以外
[発表者]D.Moraru
[備考] 開催場所：静岡大学高柳記念会館
[61]. Effect of tunnel resistance modulation on single-electron tunneling in selectively-doped Si nano-transistors
66th JSAP Spring Meeting （2019年3月11日）招待講演以外
[発表者]A. Afiff, A. Udhiarto, H. Sudibyo, D. Hartanto, M. Tabe, D. Moraru
[備考] Tokyo Institute of Technology
[62]. Effect of dimensionality on the formation of dopant-induced quantum-dots in heavily doped Si Esaki diodes
66th JSAP Spring Meeting （2019年3月11日）招待講演以外
[発表者]G. Prabhudesai, M. Manoharan, M. Hori, Y. Ono, H. Mizuta, M. Tabe, D. Moraru
[備考] Tokyo Institute of Technology
[63]. 第一原理計算を用いた外部電場によるSi ナノ構造上の不純物への影響
第66回応用物理学会春季学術講演会（2019年3月11日）招待講演以外
[発表者]山口謙祐，ムルガナタン・マノハラン，水田博，田部道晴，モラル・ダニエル
[備考] 東京工業大学
[64]. Single-charge tunneling through dopant-induced quantum dots in 2D pn tunnel diodes: a nanoscale effect
The 5th International Symposium toward the Future of Advanced Researches in Shizuoka University 2019 （2019年3月6日）招待講演以外
[発表者]G. Prabhudesai, M. Hori, Y. Ono, M. Tabe, D. Moraru
[備考] Agriculture Building, Shizuoka Campus, Shizuoka University
[65]. Single-electron tunneling in selectively-doped Si nano-transistors: role of tunnel resistance tuning
The 5th International Symposium toward the Future of Advanced Researches in Shizuoka University 2019 （2019年3月6日）招待講演以外
[発表者]Adnan Afiff, Mahmudul Hasan,Arief Udhiarto, Harry Sudibyo, Djoko Hartanto, Michiharu Tabe, Daniel Moraru
[備考] Agriculture Building, Shizuoka Campus, Shizuoka University
[66]. EFFECT OF DIMENSIONALITY ON DONOR-INDUCED QUANTUM-DOT FORMATION IN Si PN DIODES
Inter Academia Asia The 5th Conference, December 2018 Young Researchers Conference （2018年12月4日）招待講演以外
[発表者]G. Prabhudesai, Y. Ono, M. Tabe, D. Moraru
[備考] Hotel Associa Shizuoka
[67]. Control of Dopant-Atom Chains in Selectively-Doped Si Nano-Transistors for Single-Electron Transfer Applications
The 20th Takayanagi Kenjiro Memorial Symposium and The 4th ICNERE Joint Symposium （2018年11月28日）招待講演以外
[発表者]A.Afiff, M.Hasan, A.Udhiarto, H.Sudibyo, D.Hartanto, M.Tabe, D.Moraru
[備考] Hamamatsu Campus, Shizuoka University
[68]. Analysis of Single-Electron Tunneling via Donor-induced Quantum Dots in Si Nanoscale Esaki Diodes
The 20th Takayanagi Kenjiro Memorial Symposium and The 4th ICNERE Joint Symposium （2018年11月28日）招待講演以外
[発表者]G.Prabhudesai, G.Girijakumari, M.Manoharan, L.T.Anh, H.Mizuta, M.Hori, Y.Ono, M.Tabe, D.MOraru
[備考] Hamamatsu Campus, Shizuoka University
[69]. Study on High -Temperature Single-Electron Tunneling via Dopant Quantum Dots in Silicon Nanodevices
The 20th Takayanagi Kenjiro Memorial Symposium and The 4th ICNERE Joint Symposium （2018年11月27日）招待講演
[発表者]D. Moraru
[備考] Hamamatsu Campus, Shizuoka University
[70]. Single-Electron Tunneling via Dopants in Silicon Nano-Transistors and Nano-Diodes
International Conference on Industrial, Chemical, Mechanical and Electrical Engineering (ICIMECE 2018) （2018年10月9日）招待講演
[発表者]D.Moraru and M.Tabe
[備考] Alana Hotel & Convention Center, Solo, Indonesia
[71]. A Statistical Study on the Origin of Dopant Clusters in Highly-Doped Si Nanoscale pn Tunnel Diodes
17th International Conference on Global Research and Education (Inter-Academia2018) （2018年9月25日）招待講演以外
[発表者]G. Prabhudesai, G. Greeshma, M. Tabe, D. Moraru
[備考] Hotel EUROPA ROYALE Kaunas,Lithuania
[72]. A Study of Single-Electron Tunneling in 1D Distributed Arrays of Donor Quantum Dots
17th International Conference on Global Research and Education (Inter-Academia 2018) （2018年9月24日）招待講演以外
[発表者]A. Afiff, A. Samanta, A. Udhiarto, H. Sudibyo, D. Hartanto, M. Tabe, D. Moraru
[備考] Kaunas University of Technology,Lithuania
[73]. Interactions between donors and acceptors in nanoscale Si pn tunnel diodes and impact on inter-band tunneling
4th International Symposium toward the Future of Advanced Researches in Shizuoka University 2018 （2018年3月）招待講演以外
[発表者]G. Prabhudesai,G. Greeshma,M. Shibuya,T. Okasaka,T. Negoro, M. Tabe, D. Moraru
[備考] Hamamatsu Campus, Shizuoka University
[74]. Role of the position and number of donor-induced quantum dots in Si nano-channels for Coulomb blockade transport
4th International Symposium toward the Future of Advanced Researches in Shizuoka University 2018 （2018年3月）招待講演以外
[発表者]A. Afiff,T. Yamashita,K. Sakazaki,R. Tsujimura,M. Hasan,A. Samanta,A. Udhiarto,H. Sudibyo,D. Hartanto,M. Tabe,D. Moraru
[備考] Hamamatsu Campus, Shizuoka University
[75]. Conditions for Coulomb blockade inter-band tunneling transport in nanoscale Si pn tunnel diodes
4th International Symposium toward the Future of Advanced Researches in Shizuoka University 2018 （2018年3月）招待講演以外
[発表者]G. Greeshma,M. Shibuya,G. Prabhudesai,M. Tabe,D. Moraru
[備考] Hamamatsu Campus, Shizuoka University
[76]. CHARACTERIZATION OF COULOMB-BLOCKADE TRANSPORT IN DONOR QUANTUM DOTS FORMED IN MODERATELY-DOPED Si NANO-TRANSISTORS
Inter Academia Asia 2017 （2017年12月）招待講演以外
[発表者]A.Afiff,T.Yamashita,A.Udhiarto,H.Sudibyo,D.Hartanto,A.Samanta,M.Tabe,D.Moraru
[備考] ホテルアソシア静岡
[77]. IDENTIFICATION OF TUNNELING VIA DISCRETE DOPANT-INDUCED ENERGY STATES IN LOW-DIMENSIONAL Si TUNNEL DIODES
Inter Academia Asia 2017 （2017年12月）招待講演以外
[発表者]G.Prabhudesai,M.Shibuya,G.Greeshma,M.Tabe,D.Moraru
[備考] ホテルアソシア静岡
[78]. Role of Built-in Electric Field in Inter-band Tunneling via A-few-dopat Clusters in Nanoscale Si Tunnel Diodes
19th Takayanagi Kenjiro Memorial Symposium （2017年11月）招待講演以外
[発表者]G. Prabhudesai,G. Greeshma,M. Shibuya,R. Nuryadi,M. Tabe,D. Moraru
[備考] Hamamatsu Campus, Shizuoka University
[79]. Analysis of Low-Temperature Single-Electron Tunneling Transport via Selectively-Doped A-Few-Donor QDs
19th Takayanagi Kenjiro Memorial Symposium （2017年11月）招待講演以外
[発表者]A. Afiff,T. Hasan,T. Yamashita,A. Udhiarto,H. Sudibyo,D. Hartanto,A. Samanta,M. Tabe ,D. Moraru
[備考] Hamamatsu Campus, Shizuoka University
[80]. 超高濃度ドーパントが拓く新しい半導体物性
The 4th De Novo Si Workshop （2017年11月）招待講演以外
[発表者]M. Tabe,D.Moraru
[備考] 東京農工大学
[81]. Single-electron tunneling phenomena in silicon nano-transistors with dopant-induced quantum dots
IEEEInternational Microwave,Electron Devices & Solid-State Circuit Symposum (IMESS)2017 （2017年10月）招待講演
[発表者]D.Moraru,M.Tabe
[備考] Penang Skills Development Center Penang,Malaysia
[82]. Effects of Electric Field on Tunneling via Dopant States in Silicon Nano-Devices
The 16th International Conference on Global Research and Education (Inter-Academia2017) （2017年9月）招待講演以外
[発表者]D.Moraru,A.Afiff,T.Hasan,G.Prabhudesai,G.Greeshma,M.Tabe
[備考] Alexandru Ioan Cuza University of Iasi,Romania
[83]. Silicon Single-Electron Tunneling Transistors with Dopat Quantum-Dots:Perspectives for Room-Temperature Operation
International Conference o Nanoscience and Nanotechnology (ICONN 2017) （2017年8月）招待講演
[発表者]D.Moraru,A.Afiff,T.Hasan,A.Samanta,M.Tabe
[備考] SRM University, Chennai, India
[84]. Electric Field Effect on Dopant Bands in Silicon 2D Esaki Tunnel Diodes
International Conference on Nanoscience and Nanotechnology(ICONN 2017) （2017年8月）招待講演以外
[発表者]G.Prabhudesai,G.Greeshma,M.Manoharan,H.Mizuta,M.Tabe,D.Moraru
[備考] SRM University, Chennai, India
[85]. Impact of Dopant-Atoms in Inter-band Tunneling in Si Nanoscale Tunnel Diods
15th International Conference on Quality in Research (QiR 2017) （2017年7月）招待講演以外
[発表者]D.Moraru,G.Prabhudesai,M.Shibuya,M.Tabe
[備考] The Westin Resort Nusa Dua, Bali, Indonesia
[86]. A Statistical Study on the Formation of A-Few-Dopant Quantum Dots in Highly-Doped Si Nanowire Transistors
15th International Conference on Quality in Research (QiR 2017) （2017年7月）招待講演以外
[発表者]A.Afiff,A.Samanta,T.Hasan,A.Udhiarto,H.Sudibyo,D.Hartanto,M.Tabe,D.Moraru
[備考] The Westin Resort Nusa Dua Bali, Indonesia
[87]. Probing the Impact of Donor Quantum Dots with High-Bias Stability Diagrams in Selectively-Doped Si Nanoscale Transistors
2017 Silicon Nanoelectronics Workshop （2017年6月）招待講演以外
[発表者]A.Afiff,A.Samanta,T.Hasan,A.Udhiarto,D.Hartano,H.Sudibyo,M.Tabe,D.Moraru
[備考] Rihga Royal Hotel Kyoto
[88]. Inter-band Tunneling Mechanisms via Dopant-induced Energy States
2017 Silicon Nanoelectronics Workshop （2017年6月）招待講演以外
[発表者]G.Prabhudesai,G.Greeshma,M.Shibuya,M.Manoharan,H.Mizuta,M.Tabe&&D.Moraru
[備考] Rihga Royal Hotel Kyoto
[89]. Single-Electron Tunneling via Dopant-Quantum-Dots Embedded in Silicon Nano-Transistors and Nano-Diodes
EM-NANO2017 （2017年6月）招待講演
[発表者]D.Moraru,M.Tabe
[備考] AOSSA, Fukui
[90]. Donor-donor coupling and co-dopants interaction in silicon nanostructured devices
IV Bilateral Italy-Japan Seminar （2017年5月）招待講演
[発表者]M.Muruganathan,D.Moraru,M.Tabe,H.Mizuta
[備考] Seven Park Hotel, Lecco, Italy
[91]. First-principles study of inter-band tunneling current through co-dopants in Si Nano-pn Tunnel Diodes
64th JASP Spring Meeting （2017年3月）招待講演以外
[発表者]M.Muruganathan,D.Moraru,M.Tabe,H.Mizuta
[備考] Pacifico Yokohama, Kanagawa
[92]. Study of Stability of A-few-donor Quantum Dots with Different Configurations for Room-Temperature Single-Electron Tunneling Operation
64th JASP Spring Meeting （2017年3月）招待講演以外
[発表者]T.Hasan,A.Samanta,A.Afiff,L.T.Anh,M.Manoharan,M.Hori,Y.Ono,H.Mizuta,M.Tabe,D.Moraru
[備考] Pacifico Yokohama, Kanagawa
[93]. Study of Electron Localization Effects in Donor-Acceptor Pairs in Low-Dimensional Si Tunnel Diodes
64th JASP Spring Meeting （2017年3月）招待講演以外
[発表者]G.Prabuhudesai,L.T.Anh,M.Shibuya,M.Manoharan,M.Hori,Y.Ono,H.Mizuta,M.Tabe,D.Moraru
[備考] Pacifico Yokohama, Kanagawa
[94]. Coupled Dopant-Atoms as Building Blocks for Practical Atomic-Level Tunneling Operation of Si Nanodevices
The 18th Takayanagi Kenjiro Memorial Symposium （2016年12月）招待講演
[発表者]D.Moraru,A.Samanta,M.Tabe
[備考] Hamamatsu Campus,Shizuoka University
[95]. シリコンナノ構造を基盤としたドーパント原子デバイス
表面科学合同講演会（2016年11月）招待講演以外
[発表者]M.Tabe,A.Samanta,D.Moraru
[備考] Nagoya congress center,Nagoya
[96]. Single and Coupled-Dopants as Quantum Dots for Room Temperature Single-Electron Tunneling
ICNERE/EECCiS2016 （2016年11月）招待講演以外
[発表者]D.Moraru,A.Samanta,M.Tabe
[備考] Royal Orchid Garden Hotel, Malang, Indonesia
[97]. Effect of coupling of a few donor-atoms as a quantum dot for single-electron tunneling operation at room temperature
JSAP 2016 Fall Meeting （2016年9月）招待講演以外
[発表者]D.Moraru,A.Samanta,T.Hasan,M.Muruganathan,H.Mizuta,M.Tabe
[備考] Toki Messe, Nigata
[98]. Analysis of phonon assistance as a function of temperature in inter-band tunneling in 2D Si lateral Esaki diodes
JSAP 2016 Fall Meeting （2016年9月）招待講演以外
[発表者]D.Moraru,M.Shibuya,R.Nuryadi,M.Hori,Y.Ono,M.Tabe
[備考] Toki Messe, Nigata
[99]. Inter-Band Current Enhancement by Dopant-Atoms in Low-Dimensional pn Tunnel Diodes
IA2016 （2016年9月）招待講演以外
[発表者]D.Moraru,M.Muruganathan,L.T.Anh,R.Nuyadi,H.Mizuta,M.Taber
[備考] Warsaw University, Poland
[100]. Toward Room Temperature Operation of Dopant Atom Transistors
IA2016 （2016年9月）招待講演以外
[発表者]M.Tabe,A.Samanta,D.Moraru
[備考] Warsaw University, Poland
[101]. Enhancement of Inter-Band Tunneling due to Low-Dimensionality of Lateral 2D Silicon Esaki Diodes
2016 Silicon Nanoelectronics Workshop （2016年6月）招待講演以外
[発表者]D.Moraru,H.N.Tan,L.T.Anh,M.Manoharan,T.Mizuno,R.Nuryadi,H.Mizuta,M.Tabe
[URL]
[備考] Honolulu,USA
[102]. Quantum tunneling in dopant-atom transistors up to room temperature
EMN Quantum Meeting （2016年4月）招待講演
[発表者]D. Moraru,A. Samanta, L. T. Anh, M. Manoharan, T. Mizuno, K. Tyszka, R. Jablonski, H. Mizuta, and M. Tabe
[URL]
[備考] Phuket, Thailand
[103]. Si中の個別ドーパントの物理と利用：FETとエサキダイオード (Physics and applications of individual dopants in Si: FETs and Esaki diodes)
Workshop on Nanodevice Technologies 2016 （2016年3月）招待講演
[発表者]M. Tabe,D. Moraru; A. Samanta; T. Mizuno
[備考] Hiroshima University
[104]. ドーパントを介したトンネル電流の評価とデバイス応用 (Results of tunneling currents via dopants and device applications)
ナノエレクトロニクス新機能創出・集積化技術専門員会「トンネル現象を利用したデバイスとその物理」 (Workshop on tunneling devices and their physics – Institute of Electrical Engineers of Japan/IEEJ) （2016年3月）招待講演
[発表者]M. Tabe,D. Moraru; A. Samanta; T. Mizuno
[備考] Waseda University
[105]. Tunneling-transport operation of selectively-doped dopant-atom transistors up to room temperature
63rd JSAP Spring Meeting （2016年3月）招待講演以外
[発表者]A. Samanta,D. Moraru; Y. Takasu; T. Mizuno; M. Tabe
[備考] Tokyo Institute of Technology
[106]. Effects of phonons and discrete dopants on band-to-band tunneling in two-dimensional Si pn junction diodes
63rd JSAP Spring Meeting （2016年3月）招待講演以外
[発表者]D. Moraru,H. N. Tan; R. Unno; T. Mizuno; M. Manoharan; L. T. Anh; R. Nuryadi; H. Mizuta; M. Tabe
[備考] Tokyo Institute of Technology
[107]. First-principles study of the impact of inter-dopants interaction on their wavefunctions in downscaled P-B co-doped Si nanorods
63rd JSAP Spring Meeting （2016年3月）招待講演以外
[発表者]L. T. Anh,D. Moraru; M. Manoharan; M. Tabe; H. Mizuta
[備考] Tokyo Institute of Technology
[108]. My decade in nanoelectronics - the world of individual electrons, atoms and molecules
European Research(ers') Day 2015 （2015年12月）招待講演以外
[発表者]D. Moraru
[備考] Tokyo, EU Delegation
[109]. Atomic and molecular effects based on dopants in silicon nanodevices
International Conference on Small Science (ICSS 2015) （2015年11月）招待講演
[発表者]D. Moraru,A. Samanta, T. Mizuno, M. Tabe
[備考] Phuket, Thailand
[110]. Effect of individual dopants in nano-SOI-MOSFETs and nano-pn-diodes
ECS ULSI Process Integration 9 Conference （2015年10月）招待講演
[発表者]M. Tabe,D. Moraru, A. Samanta, K. Tyszka, H.N. Tan, Y. Takasu, R. Jablonski, L.T. Anh, H. Mizuta, T. Mizuno
[備考] Phoenix, USA
[111]. Impact of dopant-atoms on electron tunneling into nanoscale-transistor channels
14th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) （2015年9月）招待講演以外
[発表者]D. Moraru,A. Samanta, Y. Takasu, K. Tyszka, T. Mizuno, R. Jablonski, M. Tabe
[備考] Hamamatsu
[112]. Correlation between single-electron tunneling characteristics and potential landscapes in dopant-atom transistors
76th JSAP Autumn Meeting （2015年9月）招待講演以外
[発表者]K. Tyszka,D. Moraru,A. Samanta,T. Mizuno,R. Jablonski,M. Tabe
[備考] Nagoya
[113]. High-temperature single-electron tunneling transport through dopant-cluster in narrow channel SOI-FETs
76th JSAP Autumn Meeting （2015年9月）招待講演以外
[発表者]A. Samanta,D. Moraru,Y. Takasu,T. Mizuno,M. Tabe
[備考] Nagoya
[114]. ドーパントによるバンド間トンネルの増強効果
76th JSAP Autumn Meeting （2015年8月）招待講演以外
[発表者]H.N. Tan,D. Moraru,L.T. Anh,M. Manoharan,T. Mizuno,H. Mizuta,M. Tabe
[備考] Nagoya
[115]. Dopant-cluster-assisted tunneling in Si nanodevices
Silicon Quantum Electronics Workshop 2015 （2015年8月）招待講演以外
[発表者]M. Tabe,D. Moraru,A. Samanta,H. N. Tan,L. T. Anh,M. Manoharan,H. Mizuta,T. Mizuno
[備考] Takamatsu
[116]. Impact of co-doped and intrinsic region length on subthreshold swing (SS) in Si nanoscale lateral p-n and p-i-n devices
Quality in Research (QiR) Conference （2015年8月）招待講演以外
[発表者]K. Fauziah,A. Udhiarto,D. Moraru,T. Mizuno,D. Hartanto,M. Tabe
[備考] Lombok, Indonesia/University of Indonesia
[117]. I-V characteristics of highly-doped p-i-n diodes (Effects of nanometer scale intrinsic silicon-on-insulator layer at room temperature)
Quality in Research (QiR) Conference （2015年8月）招待講演以外
[発表者]A. A. N. Gde Sapteka,S. Purwiyanti,A. Udhiarto,H. Sudibyo,D. Hartanto,H. N. Tan,R. Unno,D. Moraru,M. Tabe
[備考] Lombok, Indonesia/University of Indonesia
[118]. Physics of strongly-coupled dopant atoms in nanodevices
Quality in Research (QiR) Conference （2015年8月）招待講演以外
[発表者]D. Moraru,K. Tyszka,Y. Takasu,A. Samanta,T. Mizuno,R. Jablonski,M. Tabe
[備考] Lombok, Indonesia/University of Indonesia
[119]. Recent progress in single-dopant atom devices
Quality in Research (QiR) Conference （2015年8月）招待講演
[発表者]M. Tabe,D. Moraru,A. Samanta,T. Mizuno
[備考] Lombok, Indonesia/University of Indonesia
[120]. The impact of single donor and donor-acceptor pair on electronic and transport properties of silicon nanostructures
IEEE Silicon Nanoelectronics Workshop （2015年6月）招待講演以外
[発表者]L. T. Anh,D. Moraru,M. Manoharan,M. Tabe,H. Mizuta
[備考] Rihga Royal Hotel, Kyoto
[121]. Dopant-assisted tunnel-current enhancement in two-dimensional Esaki diodes
IEEE Silicon Nanoelectronics Workshop （2015年6月）招待講演以外
[発表者]H. N. Tan,D. Moraru,K. Tyszka,A. Sapteka,S. Purwiyanti,L. T. Anh,M. Manoharan,T. Mizuno,R. Jablonski,D. Hartanto,H. Mizuta,M. Tabe
[備考] Rihga Royal Hotel, Kyoto
[122]. Position and number control of donor-QD potential by pattern-doping in SOI-FET channel (poster)
IEEE Silicon Nanoelectronics Workshop （2015年6月）招待講演以外
[発表者]K. Tyszka,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe
[備考] Rihga Royal Hotel, Kyoto
[123]. Impact of diffused donor-clusters near lead/channel boundary on high-temperature single-electron tunneling in narrow SOI-FETs
IEEE Silicon Nanoelectronics Workshop （2015年6月）招待講演以外
[発表者]D. Moraru,A. Samanta,Y. Takasu,K. Tyszka,T. Mizuno,R. Jablonski,M. Tabe
[備考] Rihga Royal Hotel, Kyoto
[124]. Tunneling via single and coupled dopants in Si nanodevices
EMN Meeting on Quantum Technology （2015年4月）招待講演
[発表者]D. Moraru,A. Samanta,K. Tyszka,L. T. Anh,M. Manoharan,T. Mizuno,R. Jablonski,H. Mizuta,M. Tabe
[備考] Beijing, China
[125]. Surface potential observation of heavily-doped Si by KPFM
62nd JSAP Spring Meeting （2015年3月）招待講演以外
[発表者]K. Tyszka,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe
[備考] Tokai Univ., Atsugi
[126]. Effect of individual dopants in Esaki tunneling diodes
62nd JSAP Spring Meeting （2015年3月）招待講演以外
[発表者]H. N. Tan,D. Moraru,R. Unno,A. Sapteka,S. Purwiyanti,L. T. Anh,M. Manoharan,T. Mizuno,H. Mizuta,D. Hartanto,M. Tabe
[備考] Tokai Univ., Atsugi
[127]. Electric-field-assisted formation of an interfacial double-donor molecule in Si nano-transistors
62nd JSAP Spring Meeting （2015年3月）招待講演以外
[発表者]A. Samanta,D. Moraru,T. Mizuno,M. Tabe
[備考] Tokai Univ., Atsugi
[128]. Dopant atom MOSFET by low-concentration phosphorus doping (低濃度リンドープによるドーパント原子MOSFET)
62nd JSAP Spring Meeting （2015年3月）招待講演以外
[発表者]Y. Takasu,D. Moraru,T. Mizuno,M. Tabe
[備考] Tokai Univ., Atsugi
[129]. First-principle calculations of the interactions between single phosphorus donor and boron acceptor in the P-B co-doped silicon nanostructures
62nd JSAP Spring Meeting （2015年3月）招待講演以外
[発表者]L. T. Anh,D. Moraru,M. Muruganathan,M. Tabe,H. Mizuta
[備考] Tokai Univ., Atsugi
[130]. Interactions of individual dopants and macroscopic quantum dots in weakly-doped nanoscale SOI-FETs
62nd JSAP Spring Meeting （2015年3月）招待講演以外
[発表者]D. Moraru,Y. Takasu,A. Samanta,T. Mizuno,M. Tabe
[備考] Tokai Univ., Atsugi
[131]. Tunneling transport via dopant-induced quantum dots in silicon nano-devices
3rd International Conference on Nanoscience and Nanotechnology (ICONN), Abstracts pp. 28 （2015年2月）招待講演
[発表者]D. Moraru,K. Tyszka,A. Samanta,T. Mizuno,R. Jablonski,M. Tabe
[備考] SRM Univ., Chennai, India
[132]. Interaction between dopant atoms and interface in nanoscale transistors
3rd International Conference on Nanoscience and Nanotechnology (ICONN), Abstracts pp. 38 （2015年2月）招待講演以外
[発表者]A. Samanta,D. Moraru,T. Mizuno,M. Tabe
[備考] SRM Univ., Chennai, India
[133]. Interface-assisted merging of two donor atoms in ultrathin Si-transistors (poster)
International Symposium “Toward the Future of Advanced Researches in Shizuoka University”, Proceedings pp. 46 （2015年1月）招待講演以外
[発表者]A. Samanta,D. Moraru,T. Mizuno,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[134]. KPFM observation of donors in transistor channels doped with different concentrations (poster)
International Symposium “Toward the Future of Advanced Researches in Shizuoka University”, Proceedings pp. 48 （2015年1月）招待講演以外
[発表者]K. Tyszka,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[135]. Atomic and molecular behavior in tunneling transport via dopants in nano-transistors (poster)
International Symposium “Toward the Future of Advanced Researches in Shizuoka University”, Proceedings pp. 47 （2015年1月）招待講演以外
[発表者]D. Moraru,A. Samanta,Y. Takasu,T. Mizuno,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[136]. Low-temperature spectroscopy of donor states in silicon nano-channels (poster)
16th Takayanagi Kenjiro Memorial Symposium, Proceedings pp. PS1-7 （2014年11月）招待講演以外
[発表者]D. Moraru,T. Tsutaya,Y. Takasu,A. Samanta,T. Mizuno,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[137]. Single-electron transport in double-donor system at Si/SiO2 interface in an ultrathin SOI-FET (poster)
16th Takayanagi Kenjiro Memorial Symposium, Proceedings pp. PS1-8 （2014年11月）招待講演以外
[発表者]A. Samanta,D. Moraru,T. Mizuno,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[138]. KPFM observation of donors in field-effect transistor channel (poster)
16th Takayanagi Kenjiro Memorial Symposium, Proceedings pp. PS1-9 （2014年11月）招待講演以外
[発表者]K. Tyszka,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[139]. Silicon nanoscale transistors with dopant-induced quantum dots
2nd International Conference on Nano Electronics Research and Education (ICNERE 2014), Proceedings pp. 55-56 （2014年11月）招待講演以外
[発表者]D. Moraru,K. Tyszka,A. Samanta,Y. Takasu,T. Tsutaya,T. Mizuno,R. Jablonski,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[140]. Transport phenomena in nanoscale silicon tunneling pn diodes
2nd International Conference on Nano Electronics Research and Education (ICNERE 2014), Proceedings pp. 57-58 （2014年11月）招待講演以外
[発表者]A. A. N. G. Sapteka,S. Purwiyanti,H. N. Tan,R. Unno,D. Moraru,T. Mizuno,A. Udhiarto,D. Hartanto,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[141]. シリコン中の少数個不純物の電子状態とデバイス応用 (Electronic states and device physics of a few impurities in silicon)
電子情報通信学会東北支部学術講演会 (IEICE Electronic Devices – Tohoku Branch – Meeting) （2014年10月）招待講演
[発表者]M. Tabe,D. Moraru,T. Mizuno
[備考] Akita Univ.
[142]. Impact of dopant-induced states on interband tunneling in nanoscale pn junctions
International Conference on Solid State Devices and Materials (SSDM) （2014年9月）招待講演以外
[発表者]K. Tyszka,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe
[備考] Tsukuba
[143]. Impact of dopant-induced states on interband tunneling in nanoscale pn junctions
International Conference on Solid State Devices and Materials (SSDM) （2014年9月）招待講演以外
[発表者]H. N. Tan,S. Purwiyanti,D. Moraru,L. T. Anh,M. Manoharan,T. Mizuno,H. Mizuta,D. Hartanto,M. Tabe
[備考] Tsukuba
[144]. Impact of doping concentration regimes on low-temperature tunneling in nanoscale SOI-FETs
75th JSAP Autumn Meeting （2014年9月）招待講演以外
[発表者]D. Moraru,Y. Takasu,T. Tsutaya,A. Samanta,L. T. Anh,M. Manoharan,T. Mizuno,H. Mizuta,M. Tabe
[備考] Hokkaido Univ., Sapporo
[145]. Interband tunneling through individual dopants in nanoscale pn junctions
75th JSAP Autumn Meeting （2014年9月）招待講演以外
[発表者]H. N. Tan,S. Purwiyanti,D. Moraru,L. T. Anh,M. Manoharan,T. Mizuno,H. Mizuta,D. Hartanto,M. Tabe
[備考] Hokkaido Univ., Sapporo
[146]. Effect of dopants in tunnel barriers of selectively doped SOI-FETs
75th JSAP Autumn Meeting （2014年9月）招待講演以外
[発表者]A. Samanta,D. Moraru,T. Tsutaya,L. T. Anh,M. Manoharan,T. Mizuno,H. Mizuta,M. Tabe
[備考] Hokkaido Univ., Sapporo
[147]. KPFM imaging of donor clusters in selectively-doped SOI-FET
75th JSAP Autumn Meeting （2014年9月）招待講演以外
[発表者]K. Tyszka,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe
[備考] Hokkaido Univ., Sapporo
[148]. Tunneling transport in quantum dots formed by coupled dopant atoms
13th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) （2014年9月）招待講演以外
[発表者]D. Moraru,A. Samanta,T. Tsutaya,Y. Takasu,T. Mizuno,M. Tabe
[備考] Riga, Latvia
[149]. Study of interband tunneling in nanoscale silicon pn junctions
13th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) （2014年9月）招待講演以外
[発表者]S. Purwiyanti,H. N. Tan,D. Moraru,T. Mizuno,D. Hartanto,M. Tabe
[備考] Riga, Latvia
[150]. KPFM observation of dopant arrangements in silicon transistors
13th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) （2014年9月）招待講演以外
[発表者]K. Tyszka,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe
[備考] Riga, Latvia
[151]. Control of electron transport regimes via single- and multiple-donors in nano-channel SOI-FETs
IEEE Silicon Nanoelectronics Workshop （2014年6月）招待講演以外
[発表者]D. Moraru,A. Samanta,T. Tsutaya,Y. Takasu,L. T. Anh,M. Manoharan,T. Mizuno,H. Mizuta,M. Tabe
[備考] Honolulu, USA
[152]. Electron transport in double-donor systems at Si/SiO2 interface in SOI-FETs (poster)
IEEE Silicon Nanoelectronics Workshop （2014年6月）招待講演以外
[発表者]A. Samanta,D. Moraru,T. Mizuno,M. Tabe
[備考] Honolulu, USA
[153]. Study of quantized-energy effects in Si nanoscale lateral pn junction diodes (poster)
IEEE Silicon Nanoelectronics Workshop （2014年6月）招待講演以外
[発表者]S. Purwiyanti,H. N. Tan,D. Moraru,L. T. Anh,M. Manoharan,T. Mizuno,H. Mizuta,D. Hartanto,M. Tabe
[備考] Honolulu, USA
[154]. Electron tunneling operation of single-donor-atom transistors at elevated temperatures (invited - Paper Award presentation)
61st JSAP Spring Meeting （2014年3月）招待講演
[発表者]M. Tabe,E. Hamid,D. Moraru,Y. Kuzuya,T. Mizuno,L. T. Anh,H. Mizuta
[備考] Aoyama Gakuin Univ., Sagamihara
[155]. Tunneling transport spectroscopy of interacting donors in silicon nano-transistors
61st JSAP Spring Meeting （2014年3月）招待講演以外
[発表者]D. Moraru,A. Samanta,Y. Takasu,T. Tsutaya,L. T. Anh,T. Mizuno,H. Mizuta,M. Tabe
[備考] Aoyama Gakuin Univ., Sagamihara
[156]. Effect of electric field on single-electron tunneling transport in dopant-atom transistors
61st JSAP Spring Meeting （2014年3月）招待講演以外
[発表者]A. Samanta,D. Moraru,T. Mizuno,M. Tabe
[備考] Aoyama Gakuin Univ., Sagamihara
[157]. Interband tunneling in Si lateral nano-pn junctions
61st JSAP Spring Meeting （2014年3月）招待講演以外
[発表者]S. Purwiyanti,H. N. Tan,G. Sapteka,D. Moraru,T. Mizuno,D. Hartanto,M. Tabe
[備考] Aoyama Gakuin Univ., Sagamihara
[158]. Dopant atom devices based on Si nanostructures
7th International Workshop on New Group IV Semiconductor Nanoelectronics & JSPS Core-to-Core Program Joint Seminar “Atomically Controlled Processing for Ultralarge Scale Integration” （2014年1月）招待講演
[発表者]M. Tabe,D. Moraru,E. Hamid,A. Samanta,L. T. Anh,T. Mizuno,H. Mizuta
[備考] Tohoku Univ., Sendai
[159]. Transport spectroscopy of selectively-doped interacting donors in silicon nano-structures
15th Takayanagi Kenjiro Memorial Symposium, Proceedings, pp. S7-9 （2013年11月）招待講演以外
[発表者]D. Moraru,A. Samanta,L. T. Anh,T. Mizuno,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[160]. Electric field effect on single-dopant-atom Si FETs (poster)
15th Takayanagi Kenjiro Memorial Symposium, Proceedings pp. S4-11 （2013年11月）招待講演以外
[発表者]A. Samanta,D. Moraru,T. Mizuno,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[161]. Single dopant nature of nano-pn junctions (poster)
15th Takayanagi Kenjiro Memorial Symposium, Proceddings pp. S4-12 （2013年11月）招待講演以外
[発表者]S. Purwiyanti,D. Moraru,T. Mizuno,D. Hartanto,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[162]. Surface potential measurement of selectively-doped FETs by KFM (poster)
15th Takayanagi Kenjiro Memorial Symposium, Proceedings pp. S4-13 （2013年11月）招待講演以外
[発表者]K. Tyszka,R. Nowak,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[163]. Transport spectroscopy of selectively doped dopant-based SOI-transistors (poster)
Symposium on Directions of Interdisciplinary Domain Research in Japan-Europe Partnership 2013 （2013年11月）招待講演以外
[発表者]A. Samanta,D. Moraru,T. Mizuno,L. T. Anh,H. Mizuta,M. Tabe
[備考] Shizuoka
[164]. First-principle analysis of electronic states strongly bound to a single phosphorus donor in silicon cross-shaped nanostructures
4th International Workshop on Nanotechnology and Application (IWNA) 2013 （2013年11月）招待講演以外
[発表者]L. T. Anh,Y. Kuzuya,D. Moraru,T. Mizuno,M. Muruganathan,M. Tabe,H. Mizuta
[備考] Vung Tau, Viet Nam
[165]. Dopant-atom-based tunnel SOI-MOSFETs
224th Electrochemical Society (ECS) Meeting （2013年10月）招待講演
[発表者]M. Tabe,D. Moraru,E. Hamid,A. Samanta,L. T. Anh,T. Mizuno,H. Mizuta
[備考] San Francisco, USA
[166]. Dopant-atom-based SOI-transistors by selective nanoscale doping
International Conference on Solid State Devices and Materials (SSDM) （2013年9月）招待講演以外
[発表者]A. Samanta,D. Moraru,Y. Kuzuya,K. Tyszka,L. T. Anh,T. Mizuno,R. Jablonski,H. Mizuta,M. Tabe
[備考] Fukuoka
[167]. Transport via dopant-quantum-dots fabricated by thermal diffusion through nano-masks
74th JSAP Autumn Meeting （2013年9月）招待講演以外
[発表者]D. Moraru,A. Samanta,L. T. Anh,T. Mizuno,H. Mizuta,M. Tabe
[備考] Doshisha Univ., Kyoto
[168]. Transport spectroscopy of dopant states in randomly-doped single-electron transistors
74th JSAP Autumn Meeting （2013年9月）招待講演以外
[発表者]A. Samanta,D. Moraru,E. Hamid,Y. Kuzuya,L. T. Anh,T. Mizuno,H. Mizuta,M. Tabe
[備考] Doshisha Univ., Kyoto
[169]. KFM measurement of nano-scale selectively doped silicon channel
74th JSAP Autumn Meeting （2013年9月）招待講演以外
[発表者]K. Tyszka,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe
[備考] Doshisha Univ., Kyoto
[170]. Observation of individual dopants in the electrical characteristics of nanoscale pn junctions
74th JSAP Autumn Meeting （2013年9月）招待講演以外
[発表者]S. Purwiyanti,D. Moraru,T. Mizuno,D. Hartanto,M. Tabe
[備考] Doshisha Univ., Kyoto
[171]. Ab-initio study of interactive-donor states of multiple P-atoms in Si nanoplates
74th JSAP Autumn Meeting （2013年9月）招待講演以外
[発表者]L. T. Anh,A. Samanta,D. Moraru,T. Mizuno,M. Muruganathan,M. Tabe,H. Mizuta
[備考] Doshisha Univ., Kyoto
[172]. Fabrication of controlled dopant-induced quantum dots by thermal diffusion through nano-masks
12th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) （2013年9月）招待講演以外
[発表者]D. Moraru,A. Samanta,T. Mizuno,M. Tabe
[備考] Sofia Univ., Bulgaria
[173]. Individual dopants signature in I-V characteristics of nanoscale SOI pn junctions
12th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) （2013年9月）招待講演以外
[発表者]S. Purwiyanti,D. Moraru,R. Nowak,,T. Mizuno,R. Jablonski,D. Hartanto,M. Tabe
[備考] Sofia Univ., Bulgaria
[174]. Detection of dopant potential in silicon nano-channel by low-temperature Kelvin probe force microscopy
12th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) （2013年9月）招待講演以外
[発表者]M. Tabe,R. Nowak,K. Tyszka,D. Moraru,T. Mizuno,R. Jablonski
[備考] Sofia Univ., Bulgaria
[175]. Electronic states of pn junction in silicon nanostructure (シリコンナノpn接合の電子状態)
JSAP 73rd Autumn National Meeting （2013年9月）招待講演以外
[発表者]Y. Kuzuya,D. Moraru,T. Mizuno,M. Tabe,H. Mizuta
[備考] Tokushima Univ.
[176]. Individuality of dopants in silicon nano-pn junctions
International Symposium on Ultrafast Phenomena in Semiconductors (UFPS 2013) （2013年8月）招待講演以外
[発表者]D. Moraru,S. Purwiyanti,R. Nowak,T. Mizuno,A. Udhiarto,D. Hartanto,R. Jablonski,M. Tabe
[備考] Vilnius, Lithuania
[177]. Potential profile and photovoltaic effect in nanoscale lateral pn junction observed by Kelvin probe force microscopy
8th International Conference on Si Epitaxy and Heterostructures/6th International Symposium on Control of Semiconductor Interfaces (ISCSI-8/ISCSI-VI 2013) （2013年6月）招待講演以外
[発表者]R. Nowak,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe
[備考] Fukuoka
[178]. Electrical characteristics of donor-induced quantum dots formed in nanoscale selectively-doped SOI-FETs
IEEE Silicon Nanoelectronics Workshop （2013年6月）招待講演以外
[発表者]D. Moraru,A. Samanta,Y. Kuzuya,T. Nagasaka,T. Mizuno,M. Tabe
[備考] Rihga Royal Hotel, Kyoto
[179]. Dopant-induced random telegraph signal in nanoscale pn and pin junctions
IEEE Silicon Nanoelectronics Workshop （2013年6月）招待講演以外
[発表者]S. Purwiyanti,R. Nowak,D. Moraru,T. Mizuno,R. Jablonski,D. Hartanto,M. Tabe
[備考] Rihga Royal Hotel, Kyoto
[180]. Observation of negative differential conductance in nanoscale p-n junctions
Quality in Research (QiR) International Conference 2013 （2013年6月）招待講演以外
[発表者]S. Purwiyanti,D. Moraru,T. Mizuno,D. Hartanto,M. Tabe
[備考] Yogyakarta, Indonesia
[181]. Observation of nanosize effect in nanoscale p-n and p-i-n junction solar cells
Quality in Research (QiR) International Conference 2013 （2013年6月）招待講演以外
[発表者]A. Udhiarto,D. Moraru,S. Purwiyanti,T. Mizuno,M. Tabe
[備考] Yogyakarta, Indonesia
[182]. Single-dopant-atom device for the future of nanoelectronics
Quality in Research (QiR) International Conference 2013 （2013年6月）招待講演
[発表者]M. Tabe,D. Moraru,E. Hamid,T. Mizuno
[備考] Yogyakarta, Indonesia
[183]. Electron-tunneling operation of single-dopant-atom transistors at elevated temperature – Toward room temperature operation
IEICE ED/SDM Meeting (IEICE Technical Reports Vol. 113, No. 40, pp. 65-70 (2013)) （2013年5月）招待講演以外
[発表者]D. Moraru,E. Hamid,A. Samanta,L. T. Anh,T. Mizuno,H. Mizuta,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[184]. Multiple-donor systems and interaction with photons for diversity of applications
Silicon Nanoelectronics for Advanced Applications (II Bilateral Italy-Japan Seminar) （2013年4月）招待講演
[発表者]D. Moraru
[備考] Riva del Garda, Italy
[185]. Ab initio study of binding energy for single phosphorus donor in silicon nano stub-shaped channel
JSAP 60th Spring National Meeting （2013年3月）招待講演以外
[発表者]L. T. Anh,Y. Kuzuya,D. Moraru,T. Mizuno,M. Muruganathan,M. Tabe,H. Mizuta
[備考] Kanagawa
[186]. Persistence of single-donor effect up to room temperature in SOI-MOSFETs
JSAP 60th Spring National Meeting （2013年3月）招待講演以外
[発表者]A. Samanta,E. Hamid,D. Moraru,T. Mizuno,M. Tabe
[備考] Kanagawa
[187]. Trapping and detrapping of carriers by individual dopants in lateral nanoscale p-n junctions
JSAP 60th Spring National Meeting （2013年3月）招待講演以外
[発表者]S. Purwiyanti,D. Moraru,T. Mizuno,D. Hartanto,M. Tabe
[備考] Kanagawa
[188]. Influence of deep-energy dopants on the electronic potential distribution of two-dimensional pn junctions measured by Kelvin probe force microscope
JSAP 60th Spring National Meeting （2013年3月）招待講演以外
[発表者]R. Nowak,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe
[備考] Kanagawa
[189]. Single-electron switching in a triple-donor-atom system in nanoscale SOI-FETs
JSAP 60th Spring National Meeting （2013年3月）招待講演以外
[発表者]D. Moraru,J. C. Tarido,E. Hamid,T. Mizuno,M. Tabe
[備考] Kanagawa
[190]. Individual dopant nature in Si lateral nano-pn junctions
IEICE ED/SDM Meeting (IEICE Technical Reports Vol. 112, No. 445 (ED), pp. 25-30 (2013)) （2013年2月）招待講演以外
[発表者]S. Purwiyanti,A. Udhiarto,R. Nowak,D. Moraru,T. Mizuno,D. Hartanto,R. Jablonski,M. Tabe
[備考] Hokkaido Univ., Sapporo
[191]. Effect of deep-level dopants on the electronic potential of thin Si pn junctions observed by Kelvin probe force microscope
International Workshop on Advanced Nanovision Science (IWANS 2013) （2013年1月）招待講演以外
[発表者]R. Nowak,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe
[備考] RIE, Shizuoka Univ., Hamamatsu
[192]. Single dopant transistor – Toward room temperature operation
ITRS ERM (International Technology Roadmap for Semiconductors Emerging Research Materials) Workshop （2013年1月）招待講演
[発表者]D. Moraru,M. Tabe
[備考] Berkeley, USA
[193]. Donor ionization energy and electronic states in Si nano-FETs
Korea-Japan Student Workshop （2012年11月）招待講演以外
[発表者]Y. Kuzuya,D. Moraru,T. Mizuno,M. Tabe
[備考] Pusan Univ., Korea
[194]. Observation of charging and discharging effects of dopant atoms in nanoscale lateral p-n junction by Kelvin Probe Force Microscope
14th Takayanagi Kenjiro Memorial Symposium （2012年11月）招待講演以外
[発表者]R. Nowak,M. Anwar,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[195]. Dopant-based single-photon detection in lateral nanowire p-n junctions
14th Takayanagi Kenjiro Memorial Symposium （2012年11月）招待講演以外
[発表者]S. Purwiyanti,A. Udhiarto,D. Moraru,T. Mizuno,D. Hartanto,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[196]. Dopant Atom Devices Based on Si Nanostructures
14th Takayanagi Kenjiro Memorial Symposium （2012年11月）招待講演
[発表者]M. Tabe,D. Moraru,E. Hamid,T. Mizuno
[備考] Shizuoka Univ., Hamamatsu
[197]. Ab initio study of phosphorus donor states in single dopant transistor with a stub-shaped channel
Conference on Computational Physics (CCP 2012) （2012年10月）招待講演以外
[発表者]L. T. Anh,Y. Kuzuya,D. Moraru,T. Mizuno,M. Manoharan,M. Tabe,H. Mizuta
[備考] Kobe
[198]. Ab initio study of phosphorus donor in silicon nano-structures: wave function analysis of P-doped Si nano disk
JSAP 73rd Autumn National Meeting （2012年9月）招待講演以外
[発表者]L. T. Anh,Y. Kuzuya,D. Moraru,T. Mizuno,M. Tabe,H. Mizuta
[備考] Tokushima Univ.
[199]. Experimental and ab initio study of donor state deepening in nanoscale SOI-MOSFETs
IUMRS-ICEM (International Union of Materials Research Societies – International Conference on Electronic Materials) 2012 （2012年9月）招待講演以外
[発表者]D. Moraru,E. Hamid,Y. Kuzuya,T. Mizuno,H. Mizuta,M. Tabe
[備考] Yokohama
[200]. Photoexcited-electron trapping by single donor in lateral nanowire pn junction
International Conference on Solid State Devices and Materials (SSDM) （2012年9月）招待講演以外
[発表者]S. Purwiyanti,A. Udhiarto,D. Moraru,T. Mizuno,M. Tabe
[備考] Kyoto
[201]. Observation of charging and discharging effects of dopant atoms in nanoscale lateral pn junction by Kelvin probe force microscope
International Conference on Solid State Devices and Materials (SSDM) （2012年9月）招待講演以外
[発表者]R. Nowak,M. Anwar,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe
[備考] Kyoto
[202]. Photon detection by individual donor in lateral nanowire pn junction
JSAP 73rd Autumn National Meeting （2012年9月）招待講演以外
[発表者]S. Purwiyanti,A. Udhiarto,D. Moraru,T. Mizuno,M. Tabe
[備考] Tokushima Univ.
[203]. Kelvin probe force microscope observation of nanoscale pn junction depletion layer
JSAP 73rd Autumn National Meeting （2012年9月）招待講演以外
[発表者]R. Nowak,M. Anwar,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe
[備考] Tokushima Univ.
[204]. Ionization energy enhancement and high temperature operation of single-dopant transistors
JSAP 73rd Autumn National Meeting （2012年9月）招待講演以外
[発表者]E. Hamid,D. Moraru,Y. Kuzuya,T. Mizuno,Le The Anh,H. Mizuta,M. Tabe
[備考] Tokushima Univ.
[205]. Characterization of nanoscale lateral pn junction by Kelvin probe force microscope
11th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) （2012年8月）招待講演以外
[発表者]R. Nowak,M. Anwar,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe
[備考] Budapest, Hungary
[206]. Deep-energy phosphorus donor atoms in ultrathin-channel silicon transistors
11th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) （2012年8月）招待講演以外
[発表者]D. Moraru,E. Hamid,T. Mizuno,M. Tabe
[備考] Budapest, Hungary
[207]. Observation of photovoltaic effect and single-photon detection in nanowire silicon pn-junction
International Conference on Nano Electronics Research Education (ICNERE 2012) （2012年7月）招待講演以外
[発表者]A. Udhiarto,S. Purwiyanti,D. Moraru,T. Mizuno,M. Tabe
[備考] Bali, Indonesia
[208]. Observation of tunneling effects in lateral nanowire pn junctions
International Conference on Nano Electronics Research Education (ICNERE 2012) （2012年7月）招待講演以外
[発表者]S. Purwiyanti,A. Udhiarto,D. Moraru,T. Mizuno,D. Hartanto,M. Tabe
[備考] Bali, Indonesia
[209]. Ab initio analysis of donor state deepening in Si nano-channels (poster)
IEEE Silicon Nanoelectronics Workshop （2012年6月）招待講演以外
[発表者]D. Moraru,Y. Kuzuya,E. Hamid,T. Mizuno,M. Tabe,H. Mizuta
[備考] Honolulu, USA
[210]. Single-electron transport through a single donor at elevated temperatures (poster)
IEEE Silicon Nanoelectronics Workshop （2012年6月）招待講演以外
[発表者]E. Hamid,D. Moraru,T. Mizuno,M. Tabe
[備考] Honolulu, USA
[211]. Dopant atoms in silicon nanodevices
Villa Conference on Interactions Among Nanostructures (VCIAN 2012), Proceedings pp. 47 （2012年4月）招待講演
[発表者]M. Tabe,D. Moraru,E. Hamid,M. Anwar,R. Nowak,A. Udhiarto,R. Jablonski,T. Mizuno
[備考] Orlando, USA
[212]. シリコンナノシリコンナノ構造における構造におけるリンドナー電子状態の空間分布 (Spatial distribution of electronic states of single donor in silicon nanostructures)
59th Spring National Meeting （2012年3月）招待講演以外
[発表者]Y. Kuzuya,D. Moraru,T. Mizuno,M. Tabe,H. Mizuta
[備考] Waseda Univ., Tokyo
[213]. Transport through single donors at elevated temperatures in nanoscale Si transistors
59th Spring National Meeting （2012年3月）招待講演以外
[発表者]E. Hamid,D. Moraru,T. Mizuno,M. Tabe
[備考] Waseda Univ., Tokyo
[214]. Observation of the photovoltaic effect in pn-junction silicon-on-insulator nanowires
59th Spring National Meeting （2012年3月）招待講演以外
[発表者]A. Udhiarto,S. Purwiyanti,D. Moraru,T. Mizuno,M. Tabe
[備考] Waseda Univ., Tokyo
[215]. Single-dopant transistors and dopant-based turnstiles (poster)
International Seminar on Emerging Nanotechnologies (ISEN 2012) （2012年3月）招待講演以外
[発表者]D. Moraru,E. Hamid,T. Mizuno,M. Tabe
[備考] JAIST, Kanazawa
[216]. Single-dopant based silicon photonic devices (poster)
International Seminar on Emerging Nanotechnologies (ISEN 2012) （2012年3月）招待講演以外
[発表者]A. Udhiarto,D. Moraru,T. Mizuno,M. Tabe
[備考] JAIST, Kanazawa
[217]. Single-electron transfer between two donors in nanoscale thin silicon-on-insulator field-effect transistors (poster)
International Seminar on Emerging Nanotechnologies (ISEN 2012) （2012年3月）招待講演以外
[発表者]E. Hamid,D. Moraru,J. C. Tarido,S. Miki,T. Mizuno,M. Tabe
[備考] JAIST, Kanazawa
[218]. Electron filling in phosphorus donors embedded in silicon nanostructures observed by KFM technique (poster)
International Seminar on Emerging Nanotechnologies (ISEN 2012) （2012年3月）招待講演以外
[発表者]R. Nowak,M. Anwar,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe
[備考] JAIST, Kanazawa
[219]. Electronic potential of lateral nanoscale Si pn junctions observed by KFM technique
59th Spring National Meeting （2012年2月）招待講演以外
[発表者]R. Nowak,M. Anwar,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe
[備考] Waseda Univ., Tokyo
[220]. KFM observation of individual dopant potentials and electron chargin
IEICE ED/SDM Meeting (IEICE Technical Reports, Vol. 111, No. 425 (ED), pp. 13-18 (2012)) （2012年2月）招待講演以外
[発表者]R. Nowak,M. Anwar,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe
[備考] Hokkaido Univ., Sapporo
[221]. 第一原理計算によるシリコンナノロッドトランジスタ中の単一リン不純物の電子状態解析 (Ab initio analysis of electronic states for single phosphorus dopants in silicon nanorod transistors)
IEICE ED/SDM Meeting (IEICE Technical Reports, Vol. 111, No. 425 (ED), pp. 7-11 (2012)) （2012年2月）招待講演以外
[発表者]Y. Kuzuya,D. Moraru,T. Mizuno,M. Tabe,H. Mizuta
[備考] Hokkaido Univ., Sapporo
[222]. Single-dopant/interface interaction effects on transport characteristics of silicon nano-transistors
International Workshop on Advanced Nanovision Science (IWANS 2012) （2012年1月）招待講演以外
[発表者]D. Moraru,E. Hamid,T. Mizuno,M. Tabe
[備考] RIE, Shizuoka University, Hamamatsu
[223]. Theoretical analysis of single dopants in silicon nanowire transistors
Korea-Japan Student Workshop （2011年11月）招待講演以外
[発表者]Y. Kuzuya,H. Mizuta,D. Moraru,T. Mizuno,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[224]. Single-dopant based silicon photonic devices
13th Takayanagi Kenjiro Memorial Symposium （2011年11月）招待講演以外
[発表者]A. Udhiarto,D. Moraru,T. Mizuno,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[225]. KFM measurements of individual dopant potentials and effect of annealing
13th Takayanagi Kenjiro Memorial Symposium （2011年11月）招待講演以外
[発表者]R. Nowak,M. Anwar,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[226]. シリコン系シングルドーパントデバイスとフォトン検出 (Silicon-based single-dopant devices and photon sensing)
光電相互変換第１２５委員会 (本委員会第２１４回研究会) – Group IV Photonics Meeting （2011年10月）招待講演
[発表者]M. Tabe,D. Moraru,A. Udhiarto,T. Mizuno
[備考] Shizuoka Univ., Hamamatsu
[227]. Effect of donor-level deepening in nm-scale Si SOI-MOSFETs
10th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) Abstracts pp. 2 （2011年9月）招待講演以外
[発表者]M. Tabe,D. Moraru,E. Hamid,M. Anwar,R. Nowak,Y. Kuzuya,T. Mizuno
[備考] Sucevita, Romania
[228]. Temperature evolution of electron transport in single-donor transistors
10th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) Abstracts pp. 5 （2011年9月）招待講演以外
[発表者]D. Moraru,E. Hamid,A. Udhiarto,T. Mizuno,M. Tabe
[備考] Sucevita, Romania
[229]. Electron filling in phosphorus donors embedded in silicon nanostructures observed by KFM technique
10th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) Abstracts pp. 67 （2011年9月）招待講演以外
[発表者]R. Nowak,M. Anwar,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe
[備考] Sucevita, Romania
[230]. Effect of free carriers on dopant-induced surface potential in SOI-FETs
International Conference on Solid State Devices and Materials (SSDM) Extended Abstracts pp. 1235-1236 （2011年9月）招待講演以外
[発表者]M. Anwar,R. Nowak,D. Moraru,R. Jablonski,T. Mizuno,M. Tabe
[備考] Nagoya
[231]. Donor-location-dependent RTS observed by trapping and detrapping of a photoexcited electron by a single donor
International Conference on Solid State Devices and Materials (SSDM) Extended Abstracts pp. 1227-1228 （2011年9月）招待講演以外
[発表者]A. Udhiarto,D. Moraru,T. Mizuno,M. Tabe
[備考] Nagoya
[232]. Single-dopant devices toward diversity and high temperature operation (単一ドーパントデバイス：多様性と高温動作に向けて)
JSAP 72nd Autumn National Meeting (Symposium on Deterministic Doping for Extended CMOS and Single Dopant Devices) （2011年8月）招待講演
[発表者]M. Tabe,D. Moraru,T. Mizuno
[備考] Yamagata Univ.
[233]. Ab initio simulation of single dopant devices: electronic states and transport (単一ドーパントシミュレーション - ナノ構造内ドーパント原子の状態と電子輸送 -)
JSAP 72nd Autumn National Meeting (Symposium on Deterministic Doping for Extended CMOS and Single Dopant Devices) （2011年8月）招待講演
[発表者]D. Moraru,Y. Kuzuya,T. Mizuno,M. Tabe,H. Mizuta
[備考] Yamagata Univ.
[234]. Role of interface potential well in transport in single-donor transistors
JSAP 72nd Autumn National Meeting （2011年8月）招待講演以外
[発表者]D. Moraru,J. C. Tarido,E. Hamid,T. Mizuno,M. Tabe
[備考] Yamagata Univ.
[235]. Probing donor location by assistance of photons in nano-scale SOI-FETs
JSAP 72nd Autumn National Meeting （2011年8月）招待講演以外
[発表者]A. Udhiarto,D. Moraru,T. Mizuno,M. Tabe
[備考] Yamagata Univ.
[236]. State analysis of Si nanorods transistors with a few dopants (少数ドーパントを有するシリコンナノロッドの状態解析)
JSAP 72nd Autumn National Meeting （2011年8月）招待講演以外
[発表者]Y. Kuzuya,D. Moraru,T. Mizuno,M. Tabe,H. Mizuta
[備考] Yamagata Univ.
[237]. H2 annealing effects on surface potential of As-implanted Si measured by KFM
JSAP 72nd Autumn National Meeting （2011年8月）招待講演以外
[発表者]M. Anwar,R. Nowak,Y. Ono,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe
[備考] Yamagata Univ.
[238]. Photon-induced electron trapping by a single donor
IEEE Silicon Nanoelectronics Workshop Abstracts pp. 75-76 （2011年6月）招待講演以外
[発表者]A. Udhiarto,D. Moraru,R. Nakamura,T. Mizuno,M. Tabe
[備考] Rihga Royal Hotel, Kyoto
[239]. Single-electron transfer between two donors via an interface dot
IEEE Silicon Nanoelectronics Workshop Abstracts pp. 71-72 （2011年6月）招待講演以外
[発表者]J. C. Tarido,D. Moraru,E. Hamid,T. Mizuno,M. Tabe
[備考] Rihga Royal Hotel, Kyoto
[240]. Role of channel pattern on the formation of single-dopant transistors
Villa Conference on Interactions Among Nanostructures (VCIAN) Abstracts pp. 139-140 （2011年4月）招待講演以外
[発表者]D. Moraru,J. C. Tarido,A. Udhiarto,T. Mizuno,M. Tabe
[備考] Las Vegas, USA
[241]. Atom devices based on single-dopants in silicon nanostructures
Villa Conference on Interactions Among Nanostructures (VCIAN) Abstracts pp. 70 （2011年4月）招待講演
[発表者]M. Tabe,D. Moraru,E. Hamid,J. C. Tarido,M. Anwar,R. Nowak,Y. Kawai,R. Jablonski,T. Mizuno
[備考] Las Vegas, USA
[242]. Single-electron transfer between two donors in thin nanoscale silicon transistors
IEICE ED/SDM Meeting (IEICE Technical Reports (ED) Vol. 110, No. 423, pp. 57-62) （2011年2月）招待講演以外
[発表者]D. Moraru,E. Hamid,J. C. Tarido,S. Miki,R. Nakamura,T. Mizuno,M. Tabe
[備考] Hokkaido Univ., Sapporo
[243]. Current intermittency due to single photon absorption in doped SOI-FETs
IEICE ED/SDM Meeting (IEICE Technical Reports (ED) Vol. 110, No. 423, pp. 67-72) （2011年2月）招待講演以外
[発表者]A. Udhiarto,D. Moraru,T. Mizuno,M. Tabe
[備考] Hokkaido Univ., Sapporo
[244]. Si single dopant devices
International Symposium on Nanoscale Transport and Technology (ISNTT 2011) （2011年1月）招待講演
[発表者]M. Tabe,D. Moraru,E. Hamid,M. Anwar,A. Udhiarto,R. Nowak,S. Miki,R. Nakamura,Y. Kawai,J. C. Tarido,T. Mizuno
[備考] NTT Basic Research Labs, Atsugi
[245]. Observation of individual dopants in Si channel by low-temperature KFM
18th International Colloquium on Scanning Probe Microscopy Proceedings pp. S10-2i （2010年12月）招待講演
[発表者]M. Tabe,M. Anwar,Y. Kawai,R. Nowak,D. Moraru,R. Jablonski,T. Mizuno
[備考] Atami
[246]. Single dopant devices: single-electron transport through single dopants
2nd ITRS ERM Deterministic Doping Workshop （2010年11月）招待講演
[発表者]M. Tabe,D. Moraru
[備考] Berkeley, USA
[247]. Single-electron transport via single and multiple donors in nanoscale Si-FETs
12th Takayanagi Kenjiro Memorial Symposium Proceedings pp. S6-4-1-5 （2010年11月）招待講演以外
[発表者]D. Moraru,J. C. Tarido,R. Nakamura,E. Hamid,T. Mizuno,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[248]. Si nanowire p-n junction diodes
7th Korea-Japan Student Workshop （2010年11月）招待講演以外
[発表者]S. Miki,D. Moraru,T. Mizuno,M. Tabe
[備考] Pusan Univ., Korea
[249]. Single-, double-, and triple-dot arrays in patterned phosphorus-doped nano-FETs
JSAP 71st Autumn National Meeting （2010年9月）招待講演以外
[発表者]D. Moraru,R. Nakamura,J. C. Tarido,T. Mizuno,M. Tabe
[備考] Nagasaki
[250]. KFM observation of single-electron filling in single dopants
JSAP 71st Autumn National Meeting （2010年9月）招待講演以外
[発表者]M. Anwar,D. Moraru,M. Ligowski,Y. Kawai,T. Mizuno,R. Jablonski,Y. Ono,M. Tabe
[備考] Nagasaki
[251]. Sensitivity enhancement of single photon detection by channel patterning in phosphorus-doped SOI-FET
JSAP 71st Autumn National Meeting （2010年9月）招待講演以外
[発表者]A. Udhiarto,D. Moraru,S. Miki,R. Nakamura,V. Mizeikis,T. Mizuno,M. Tabe
[備考] Nagasaki
[252]. Fabrication and characterization of Si nanowire p-n diode
JSAP 71st Autumn National Meeting （2010年9月）招待講演以外
[発表者]S. Miki,D. Moraru,T. Mizuno,M. Tabe
[備考] Nagasaki
[253]. Single-electron trapping in disk-shaped doped nanoscale FETs
JSAP 71st Autumn National Meeting （2010年9月）招待講演以外
[発表者]J. C. Tarido,E. Hamid,D. Moraru,R. Nakamura,S. Miki,T. Mizuno,M. Tabe
[備考] Nagasaki
[254]. Single-electron charging by extension of dopant-induced quantum dot at interfaces under electric field
JSAP 71st Autumn National Meeting （2010年9月）招待講演以外
[発表者]E. Hamid,J. C. Tarido,S. Miki,T. Mizuno,D. Moraru,M. Tabe
[備考] Nagasaki
[255]. Single-photon detection by individual dopants and the effect of channel shape in SOI-FET
International Conference on Solid State Devices and Materials (SSDM) Extended Abstracts pp. 774-775 （2010年9月）招待講演以外
[発表者]A. Udhiarto,D. Moraru,R. Nakamura,S. Miki,T. Mizuno,V. Mizeikis,M. Tabe
[備考] Tokyo Univ.
[256]. KFM observation of single-electron filling in isolated and clustered dopants
International Conference on Solid State Devices and Materials (SSDM) Extended Abstracts pp. 97-98 （2010年9月）招待講演以外
[発表者]M. Anwar,D. Moraru,M. Ligowski,T. Mizuno,R. Jablonski,Y. Ono,M. Tabe
[備考] Tokyo Univ.
[257]. Memory effects based on dopant atoms in nano-FETs
9th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) Proceedings pp. 86-87 （2010年8月）招待講演以外
[発表者]D. Moraru,E. Hamid,J. C. Tarido,S. Miki,T. Mizuno,M. Tabe
[備考] Riga, Latvia
[258]. Kelvin probe force microscope measurement uncertainty
9th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) Proceedings pp. 211-212 （2010年8月）招待講演以外
[発表者]M. Ligowski,D. Moraru,T. Mizuno,M. Tabe,R. Jablonski
[備考] Riga, Latvia
[259]. Si-based single-dopant atom devices
9th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) Proceedings pp. 31-32 （2010年8月）招待講演以外
[発表者]M. Tabe,D. Moraru,A. Udhiarto,S. Miki,M. Anwar,Y. Kawai,T. Mizuno
[備考] Riga, Latvia
[260]. Tunable single-electron turnstile using discrete dopants in nanoscale SOI-FETs
International Symposium on Technology Evolution for Silicon Nano-Electronics (ISTESNE) Extended Abstracts pp. 37 （2010年6月）招待講演以外
[発表者]D. Moraru,K. Yokoi,R. Nakamura,T. Mizuno,M. Tabe
[備考] Tokyo
[261]. KFM observation of electron charging and discharging in phosphorus-doped SOI channel
International Symposium on Technology Evolution for Silicon Nano-Electronics (ISTESNE) Extended Abstracts pp. 59 （2010年6月）招待講演以外
[発表者]M. Anwar,Y. Kawai,D. Moraru,T. Mizuno,M. Tabe
[備考] Tokyo
[262]. Single-photon detection by Si single-electron FETs
European Materials Research Society (E-MRS) 2010 Spring Meeting （2010年6月）招待講演
[発表者]M. Tabe,A. Udhiarto,D. Moraru,T. Mizuno
[備考] Strasbourg, France
[263]. Control of dopant-induced quantum dots by channel geometry
IEEE Silicon Nanoelectronics Workshop Abstracts pp. 39-40 （2010年6月）招待講演以外
[発表者]D. Moraru,R. Nakamura,S. Miki,T. Mizuno,M. Tabe
[備考] Hilton Hawaiian Village, Honolulu, USA
[264]. Single-dopant memory effect in P-doped Si SOI-MOSFETs
IEEE Silicon Nanoelectronics Workshop Abstracts pp. 45-46 （2010年6月）招待講演以外
[発表者]E. Hamid,J. C. Tarido,S. Miki,T. Mizuno,D. Moraru,M. Tabe
[備考] Hilton Hawaiian Village, Honolulu, USA
[265]. Si single-dopant devices and their characterization
Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) (IEICE Technical Report, Vol. 110, No. 109, pp. 131-136) （2010年6月）招待講演
[発表者]M. Tabe,D. Moraru,E. Hamid,M. Anwar,A. Udhiarto,R. Nakamura,S. Miki,T. Mizuno
[備考] Tokyo
[266]. Single photon detection in single dot and multidots channel phosphorus-doped SOI-FET
ED/SDM Meeting (IEICE Technical Report, Vol. 110, no. 31, pp. 27-31) （2010年5月）招待講演以外
[発表者]A. Udhiarto,D. Moraru,R. Nakamura,S. Miki,T. Mizuno,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[267]. Charging phenomena of a single electron in P-doped SOI-MOSFETs
ED/SDM Meeting (IEICE Technical Report, Vol. 110, no. 31, pp. 23-26) （2010年5月）招待講演以外
[発表者]E. Hamid,J. C. Tarido,S. Miki,D. Moraru,T. Mizuno,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[268]. Single-dopant control in single-electron transport through arrays of dopants
57th Spring National Meeting （2010年4月）招待講演以外
[発表者]D. Moraru,S. Miki,J. C. Tarido,T. Mizuno,M. Tabe
[備考] Tohoku Univ., Sendai
[269]. Simulation and experimental study of single electron trapping in doped nanoscale FETs
57th Spring National Meeting （2010年4月）招待講演以外
[発表者]E. Hamid,J. C. Tarido,S. Miki,T. Mizuno,D. Moraru,M. Tabe
[備考] Tohoku Univ., Sendai
[270]. Observation of Si channel potential by LT-KFM
57th Spring National Meeting （2010年4月）招待講演以外
[発表者]M. Anwar,Y. Kawai,S. Miki,D. Moraru,T. Mizuno,M. Tabe
[備考] Tohoku Univ., Sendai
[271]. Interaction of single photon and single electron transport in phosphorus-doped SOI-FET
57th Spring National Meeting （2010年4月）招待講演以外
[発表者]A. Udhiarto,D. Moraru,S. Miki,T. Mizuno,M. Tabe
[備考] Tohoku Univ., Sendai
[272]. Observation of implanted As in Si by low-temperature Kelvin Probe Force Microscope
57th Spring National Meeting （2010年4月）招待講演以外
[発表者]Y. Kawai,M. Anwar,S. Miki,Y. Ono,D. Moraru,T. Mizuno,M. Tabe
[備考] Tohoku Univ., Sendai
[273]. Single electron transistor characteristics with disk-shaped channel structure
57th Spring National Meeting （2010年4月）招待講演以外
[発表者]R. Nakamura,K. Yokoi,D. Moraru,T. Mizuno,M. Tabe
[備考] Tohoku Univ., Sendai
[274]. Si single-dopant FETs and observation of single-dopant potential by LT-KFM
5th International Workshop on New Group IV Semiconductor Nanoelectronics Proceedings pp. I-09 （2010年1月）招待講演
[発表者]M. Tabe,D. Moraru,M. Anwar,Y. Kawai,S. Miki,Y. Ono,T. Mizuno
[備考] Sendai
[275]. Breakthrough of advanced nano-silicon devices
2nd International Conference on Advanced Material and Practice of Nanotechnology (ICAMPN) （2009年11月）招待講演
[発表者]M. Tabe,D. Moraru,M. Anwar,K. Yokoi,R. Nakamura,M. Ligowski,S. Miki,T. Mizuno
[備考] Jakarta, Indonesia
[276]. Si single electron devices using individual dopants
6th Korea-Japan Student Workshop （2009年10月）招待講演以外
[発表者]S. Miki,D. Moraru,R. Nakamura,M. Ligowski,T. Mizuno,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[277]. Si multi-dot FETs using discrete dopants
5th Handai Nanoscience and Nanotechnology International Symposium （2009年9月）招待講演
[発表者]M. Tabe,D. Moraru,M. Ligowski,M. Anwar,K. Yokoi,R. Jablonski,T. Mizuno
[備考] Osaka
[278]. Single-electron transport through individual dopants in heavily-doped nanoscale FETs
JSAP 70th Autumn National Meeting （2009年9月）招待講演以外
[発表者]D. Moraru,M. Ligowski,S. Miki,R. Nakamura,T. Mizuno,M. Tabe
[備考] Toyama Univ.
[279]. Effect of gate and junction capacitance dispersion on single-electron transfer
JSAP 70th Autumn National Meeting （2009年9月）招待講演以外
[発表者]K. Yokoi,D. Moraru,M. Tabe
[備考] Toyama Univ.
[280]. Possibility of single electron trapping by a single dopant in doped nanoscale FETs
JSAP 70th Autumn National Meeting （2009年9月）招待講演以外
[発表者]E. Hamid,J. C. Tarido,S. Miki,M. Anwar,M. Ligowski,T. Mizuno,D. Moraru,M. Tabe
[備考] Toyama Univ.
[281]. Observation of Single-Electron Charging in Dopant Potential by Kelvin Probe Force Microscope
JSAP 70th Autumn National Meeting （2009年9月）招待講演以外
[発表者]M. Anwar,D. Moraru,M. Ligowski,Y. Kawai,S. Miki,T. Mizuno,M. Tabe
[備考] Toyama Univ.
[282]. Single-Electron Transport Characteristics in Quantum Dot Arrays Due to Ionized Dopants
8th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) （2009年9月）招待講演以外
[発表者]D. Moraru,M. Ligowski,J. C. Tarido,S. Miki,R. Nakamura,K. Yokoi,T. Mizuno,M. Tabe
[備考] Kazimierz-Dolny/Warsaw, Poland
[283]. Detection of individual dopants in single-electron devices – a study by KFM observation and simulation
8th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) （2009年9月）招待講演以外
[発表者]M. Ligowski,D. Moraru,M. Anwar,J. C. Tarido,T. Mizuno,M. Tabe,R. Jablonski
[備考] Kazimierz-Dolny/Warsaw, Poland
[284]. Single-electron transport through discrete dopants
International Conference on Solid State Devices and Materials (SSDM) Extended Abstracts pp. 260-261 （2009年9月）招待講演以外
[発表者]D. Moraru,M. Anwar,M. Ligowski,S. Miki,R. Nakamura,T. Mizuno,R. Jablonski,M. Tabe
[備考] Sendai
[285]. Inter-dopant coupling tuning for single-electron transfer
IEEE Silicon Nanoelectronics Workshop （2009年6月）招待講演以外
[発表者]D. Moraru,M. Ligowski,K. Yokoi,T. Mizuno,M. Tabe
[備考] Rihga Royal Hotel, Kyoto
[286]. Single-dopant resolved characteristics in doped-nanowire field-effect transistors
IEEE Silicon Nanoelectronics Workshop （2009年6月）招待講演以外
[発表者]M. Ligowski,S. Miki,R. Nakamura,T. Mizuno,D. Moraru,R. Jablonski,M. Tabe
[備考] Rihga Royal Hotel, Kyoto
[287]. Observation of discrete dopant potential and its application to Si single-electron devices
6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6) （2009年5月）招待講演
[発表者]M. Tabe,D. Moraru,M. Ligowski,M. Anwar,K. Yokoi,R. Jablonski,T. Mizuno
[備考] Los Angeles, USA
[288]. Inter-dopant coupling modulation in double-gated doped-nanowire FETs
JSAP 56th Spring National Meeting （2009年3月）招待講演以外
[発表者]D. Moraru,M. Ligowski,K. Yokoi,M. Tabe
[備考] Tsukuba
[289]. Single-electron transport characteristics of P and B co-doped SOI-MOSFETs
JSAP 56th Spring National Meeting （2009年3月）招待講演以外
[発表者]S. Miki,Y. Kasai,K. Ebisawa,R. Nakamura,T. Mizuno,M. Ligowski,D. Moraru,M. Tabe
[備考] Tsukuba
[290]. Numerical study of single-electron transfer in multiple tunnel junctions with random junction capacitances
JSAP 56th Spring National Meeting （2009年3月）招待講演以外
[発表者]K. Yokoi,D. Moraru,M. Tabe
[備考] Tsukuba
[291]. Surface potential of thin Si channel measured by low-temperature Kelvin probe force microscope (LT-KFM)
JSAP 56th Spring National Meeting （2009年3月）招待講演以外
[発表者]M. Anwar,M. Ligowski,D. Moraru,J. C. Tarido,T. Mizuno,M. Tabe
[備考] Tsukuba
[292]. Si single-electron SOI-MOSFETs: interplay with individual dopants and photons
Fall Meeting of Materials Research Society (MRS) 2008 （2008年12月）招待講演
[発表者]M. Tabe,Z. A. Burhanudin,R. Nuryadi,D. Moraru,M. Ligowski,R. Jablonski,T. Mizuno
[備考] Boston, USA
[293]. Application and observation of discrete dopant potential for Si single-electron devices
International Union of Materials Research Societies International Conference in Asia (IUMRS-ICA) （2008年12月）招待講演
[発表者]M. Tabe,D. Moraru,M. Ligowski,M. Anwar,R. Jablonski,T. Mizuno
[備考] Nagoya
[294]. Atomic-level tuning of few-dopants arrays for single-electron transfer
10th Takayanagi Kenjiro Memorial Symposium & 5th International Symposium on Nanovision Science (“Nanospace Manipulation of Photons and Electrons for Nanovision Systems”) Proceedings pp. 75-76 （2008年11月）招待講演以外
[発表者]D. Moraru,M. Ligowski,K. Ebisawa,K. Yokoi,T. Mizuno,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[295]. Single-electron transfer operation in inhomogeneous arrays of quantum dots introduced by dopants
10th Takayanagi Kenjiro Memorial Symposium & 5th International Symposium on Nanovision Science (“Nanospace Manipulation of Photons and Electrons for Nanovision Systems”) Proceedings pp. 85-86 （2008年11月）招待講演以外
[発表者]K. Yokoi,D. Moraru,M. Ligowski,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[296]. Detection of individual dopants by low temperature Kelvin Probe Force Microscope
10th Takayanagi Kenjiro Memorial Symposium & 5th International Symposium on Nanovision Science (“Nanospace Manipulation of Photons and Electrons for Nanovision Systems”) Proceedings pp. 93-94 （2008年11月）招待講演以外
[発表者]M. Ligowski,D. Moraru,R. Jablonski,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[297]. Single-electron transfer in silicon nanometer-scale field-effect transistors
International Conference on Fundamental and Applied Research in Physics (FARPhys) Abstracts pp. O1 （2008年10月）招待講演以外
[発表者]D. Moraru,M. Ligowski,K. Yokoi,M. Tabe
[備考] Al.I. Cuza Univ. Iasi, Romania
[298]. Measurement of dopant-induced surface potential in a thin silicon layer by low temperature Kelvin Probe Force Microscope
4th Korean-Japan Student Workshop （2008年10月）招待講演以外
[発表者]M. Ligowski,D. Moraru,M. Anwar,R. Jablonski,T. Mizuno,M. Tabe
[備考] Pusan Univ., Korea
[299]. Gate tuning of doped-nanowire FETs for single-electron transfer
JSAP 69th Autumn National Meeting （2008年9月）招待講演以外
[発表者]D. Moraru,K. Yokoi,K. Ebisawa,Y. Kasai,M. Ligowski,M. Tabe
[備考] Nagoya
[300]. Numerical study on single-electron turnstile operation by random multidot transistors
JSAP 69th Autumn National Meeting （2008年9月）招待講演以外
[発表者]K. Yokoi,D. Moraru,M. Tabe
[備考] Nagoya
[301]. Single-electron characteristics with dopant ionization noise
JSAP 69th Autumn National Meeting （2008年9月）招待講演以外
[発表者]K. Ebisawa,D. Moraru,Y. Kasai,T. Mizuno,M. Tabe
[備考] Nagoya
[302]. Observation of dopant-potential fluctuation in the channel of SOI-FETs by LT-KFM
JSAP 69th Autumn National Meeting （2008年9月）招待講演以外
[発表者]M. Ligowski,D. Moraru,M. Anwar,R. Jablonski,M. Tabe
[備考] Nagoya
[303]. Electrical manipulation of individual dopants and electrons in silicon nanowire field-effect transistors
7th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) Proceedings pp. 52-58 （2008年9月）招待講演以外
[発表者]D. Moraru,K. Yokoi,M. Ligowski,H. Ikeda,M. Tabe
[備考] Pecs, Hungary
[304]. Detection of dopant induced potential fluctuations in silicon nanodevices channel by Low Temperature Kelvin Probe Force Microscope
7th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) Proceedings pp. 196-201 （2008年9月）招待講演以外
[発表者]M. Ligowski,M. Anwar,D. Moraru,R. Jablonski,,M. Tabe
[備考] Pecs, Hungary
[305]. Silicon single-electron devices: device physics, fabrication and measurements
7th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) Proceedings pp. 59-61 （2008年9月）招待講演以外
[発表者]M. Tabe,D. Moraru,M. Ligowski,R. Jablonski,K. Yokoi,K. Ebisawa,Y. Kasai,M. Anwar,H. Ikeda,T. Mizuno
[備考] Pecs, Hungary
[306]. Single-electron transfer by controlling the dopant-induced quantum dot landscape
International Conference on Solid State Devices and Materials (SSDM) Extended Abstracts pp. 1078-1079 （2008年9月）招待講演以外
[発表者]D. Moraru,K. Yokoi,M. Ligowski,M. Tabe
[備考] Tsukuba
[307]. Dopant freeze-out and potential fluctuations observed by Low Temperature Kelvin Probe Force Microscope
International Conference on Solid State Devices and Materials (SSDM) Extended Abstracts pp. 1084-1085 （2008年9月）招待講演以外
[発表者]M. Ligowski,M. Anwar,D. Moraru,R. Jablonski,M. Tabe
[備考] Tsukuba
[308]. Control of single dopants in the electron conduction path in SOI doped-nanowire FETs
IEEE Silicon Nanoelectronics Workshop, Abstracts pp. M1135 （2008年6月）招待講演以外
[発表者]D. Moraru,D. Nagata,K. Yokoi,K. Ebisawa,M. Tabe
[備考] Hilton Hawaiian Village, Honolulu, USA
[309]. Si bicrystal single-electron FETs
IEEE Silicon Nanoelectronics Workshop （2008年6月）招待講演以外
[発表者]Y. Kasai,T. Ishino,D. Moraru,R. Nuryadi,H. Ikeda,M. Tabe
[備考] Hilton Hawaiian Village, Honolulu, USA
[310]. Effects of assistant electrons on single-electron transfer in random multidot arrays
JSAP 55th Spring National Meeting （2008年3月）招待講演以外
[発表者]D. Moraru,K. Yokoi,H. Ikeda,M. Tabe
[備考] Chiba Univ.
[311]. Fabrication and characterization of SOI-MOSFETs with homogeneous multiple dots
JSAP 55th Spring National Meeting （2008年3月）招待講演以外
[発表者]K. Ebisawa,D. Moraru,R. Nuryadi,H. Ikeda,M. Tabe
[備考] Chiba Univ.
[312]. Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer
ED/SDM Meeting (IEICE Technical Report, Vol. 107, no. 473, pp. 17-22) （2008年1月）招待講演以外
[発表者]D. Moraru,D. Nagata,K. Yokoi,H. Ikeda,M. Tabe
[備考] Hokkaido Univ., Sapporo
[313]. Numerical investigation of 1D and 2D quantum dot arrays with design optimized for single-electron transfer operation
3rd Korean-Japan Student Workshop （2007年11月）招待講演以外
[発表者]D. Moraru,K. Yokoi,H. Ikeda,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[314]. Si single-electron devices: interaction with individual dopants and photons
5th International Symposium on Control of Semiconductor Interfaces （2007年11月）招待講演
[発表者]M. Tabe,R. Nuryadi,D. Moraru,Z. A. Burhanudin,H. Ikeda
[備考] Tokyo
[315]. Manipulation of individual electrons in doped silicon nanostructures
9th Takayanagi Kenjiro Memorial Symposium & 4th International Symposium on Nanovision Science (“Nanospace Manipulation of Photons and Electrons for Nanovision Systems”) Proceedings pp. 77-78 （2007年10月）招待講演以外
[発表者]D. Moraru,D. Nagata,K. Ebisawa,K. Yokoi,H. Ikeda,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[316]. Numerical study on single-electron transfer operation in non-homogeneous quantum-dot arrays
9th Takayanagi Kenjiro Memorial Symposium & 4th International Symposium on Nanovision Science (“Nanospace Manipulation of Photons and Electrons for Nanovision Systems”) Proceedings pp. 109-110 （2007年10月）招待講演以外
[発表者]K. Yokoi,D. Moraru,H. Ikeda,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[317]. Single-electron transfer mechanism in non-homogeneous 1D quantum-dot arrays
JSAP 68th Autumn National Meeting （2007年9月）招待講演以外
[発表者]D. Moraru,K. Yokoi,H. Ikeda,M. Tabe
[備考] Sapporo, Hokkaido Univ.
[318]. Manipulation of single electrons in Si nanodevices – interplay with photons and ions
7th International Conference on Mechatronics （2007年9月）招待講演
[発表者]M. Tabe,R. Nuryadi,Z. A. Burhanudin,D. Moraru,K. Yokoi,H. Ikeda
[備考] Warsaw, Poland
[319]. Design control of random dopant-induced multiple-tunnel-junction arrays for turnstile operation
International Conference on Solid State Devices and Materials (SSDM) Extended Asbtracts pp. 1138-1139 （2007年9月）招待講演以外
[発表者]D. Moraru,K. Yokoi,H. Ikeda,M. Tabe
[備考] Tsukuba
[320]. Single-electron transfer through purposely designed dopant arrays in silicon
6th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) Abstracts pp. 129 （2007年9月）招待講演以外
[発表者]D. Moraru,K. Yokoi,H. Ikeda,M. Tabe
[備考] Hamamatsu
[321]. Single-electron devices: interaction with individual dopants
9th Takayanagi Kenjiro Memorial Symposium & 4th International Symposium on Nanovision Science (“Nanospace Manipulation of Photons and Electrons for Nanovision Systems”) Proceedings pp. 67-70 （2007年9月）招待講演以外
[発表者]M. Tabe,R. Nuryadi,D. Moraru,Z. A. Burhanudin,H. Ikeda
[備考] Shizuoka Univ., Hamamatsu
[322]. Si multidot FETs for single-electron transfer and single-photon detection
13th International Symposium on Ultrafast Phenomena in Semiconductors （2007年8月）招待講演
[発表者]M. Tabe,R. Nuryadi,D. Moraru,Z. A. Burhanudin,K. Yokoi,H. Ikeda
[備考] Vilnius, Lithuania
[323]. Effects of parameter randomness on quantized-electron transfer in 1D multiple-tunnel-junction arrays
IEEE Silicon Nanoelectronics Workshop, Abstracts pp. 163-164 （2007年6月）招待講演以外
[発表者]D. Moraru, Y. Ono,H. Inokawa,K. Yokoi,H. Ikeda,M. Tabe
[備考] Kyoto, Rihga Royal Hotel
[324]. Time-controlled single-gate single-electron transfer in random multiple-tunnel-junctions
JSAP 54th Spring National Meeting （2007年3月）招待講演以外
[発表者]D. Moraru,Y. Ono,H. Inokawa,K. Yokoi,R. Nuryadi,H. Ikeda,M. Tabe
[備考] Sagamihara
[325]. Phosphorus freeze-out effect of SOI-MOSFETs with thin top Si layer
JSAP 54th Spring National Meeting （2007年3月）招待講演以外
[発表者]D. Nagata,K. Ebisawa,D. Moraru,M. Tabe
[備考] Sagamihara
[326]. Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
ED/SDM Meeting (IEICE Technical Report, Vol. 106, no. 520, pp. 83-88) （2007年2月）招待講演以外
[発表者]D. Moraru,Y. Ono,H. Inokawa,K. Yokoi,R. Nuryadi,H. Ikeda,M. Tabe
[備考] Sapporo, Hokkaido Univ.
[327]. Single-electron transfer in Coulomb blockade devices based on asymmetry-induced ratchet mechanism
inter-Academia & COE Young Researcher Workshop (iAY-2007 & COEY-2007) Proceedings pp. 37-38 （2007年2月）招待講演以外
[発表者]D. Moraru,Y. Ono,H. Inokawa,K. Yokoi,H. Ikeda,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[328]. An analytical calculation of single-electron pump operation in MTJ arrays
inter-Academia & COE Young Researcher Workshop (iAY-2007 & COEY-2007) Proceedings pp. 71-72 （2007年2月）招待講演以外
[発表者]K. Yokoi,D. Moraru,M. Tabe
[備考] Shizuoka Univ., Hamamatsu
[329]. Thermal agglomeration of ultrathin (110) silicon-on-insulator layer in ultrahigh vacuum
International Microprocesses and Nanotechnology Conference, Digest pp. 380-381 （2006年10月）招待講演以外
[発表者]Y. J. Fan,Z. A. Burhanudin,D. Moraru,R. Nuryadi,M. Tabe
[備考] Kamakura
[330]. Observation of single-electron pump operation with one ac gate bias in phosphorous-doped Si wires
International Conference on Solid State Devices and Materials (SSDM) Extended Abstracts pp. 820-821 （2006年9月）招待講演以外
[発表者]D. Moraru,Y. Ono,H. Inokawa,K. Yokoi,R. Nuryadi,H. Ikeda,M. Tabe
[備考] Yokohama
[331]. Towards single-electron pump operation using one ac gate bias in doped Si nanowires
5th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) Proceedings, vol. II, pp. 373-380 （2006年9月）招待講演以外
[発表者]D. Moraru,Y. Ono,H. Inokawa,K. Yokoi,R. Nuryadi,H. Ikeda,M. Tabe
[備考] Iasi, Romania
[332]. Single-electron transfer through multiple tunnel junctions in phosphorous-doped Si nanowires
JSAP 67th Autumn National Conference （2006年8月）招待講演以外
[発表者]D. Moraru,Y. Ono,H. Inokawa,K. Yokoi,R. Nuryadi,H. Ikeda,M. Tabe
[備考] Kyoto, Ritsumeikan Univ.
[333]. Thermally-induced formation of Si island array on an ultrathin (110) silicon-on-insulator substrate
JSAP 67th Autumn National Conference （2006年8月）招待講演以外
[発表者]Y. J. Fan,Z. A. Burhanudin,D. Moraru,R. Nuryadi,M. Tabe
[備考] Ritsumeikan Univ., Kyoto
[334]. Tunneling current oscillations in Si/SiO2/Si structures
ED/SDM Meeting (IEICE Technical Report, Vol. 106, no. 45, pp. 113-117) （2006年5月）招待講演以外
[発表者]D. Moraru,D. Nagata,S. Horiguchi,R. Nuryadi,H. Ikeda,M. Tabe
[備考] Toyohashi Institute of Technology
[335]. Temperature dependence of Fowler-Nordheim current oscillations in Si/SiO2/Si systems
JSAP 53rd Spring National Conference （2006年3月）招待講演以外
[発表者]D. Moraru,D. Nagata,M. Tabe
[備考] Tokyo
[336]. Fowler-Nordheim current oscillations in Si(111)/SiO2/twisted-Si(111) tunneling structures
International Conference on Solid State Devices and Materials (SSDM) Extended Abstracts pp. 178-179 （2005年9月）招待講演以外
[発表者]D. Moraru,H. Kato,S. Horiguchi,Y. Ishikawa,H. Ikeda,M. Tabe
[備考] Kobe
[337]. Single-Photon Detection by Silicon Single-Charge-Tunneling Devices
4th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) （2005年9月）招待講演以外
[発表者]M. Tabe, R. Nuryadi,Y. Ishikawa,H. Ikeda,Z. A. Burhanudin,D. Moraru
[備考] Wuppertal, Germany
[338]. Fowler-Nordheim oscillatory behavior in single-crystalline-Si/SiO2/single-crystalline-Si bonded structures
JSAP 52nd Spring National Conference （2005年4月）招待講演以外
[発表者]D. Moraru,H. Kato,Y. Ishikawa,M. Tabe
[備考] Tokyo
[339]. Interference effect of tunneling electrons in single-crystalline-Si/SiO2/single-crystalline-Si diodes
1st International Symposium on Nanovision Science (“Nanospace Manipulation of Photons and Electrons for Nanovision Systems”) Proceedings pp. 69-70 （2005年2月）招待講演以外
[発表者]D. Moraru,H. Kato,Y. Ishikawa,M. Tabe
[備考] Shizuoka University, Hamamatsu