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静岡大学教員データベース - 教員個別情報 : MORARU DANIEL (MORARU DANIEL)

論文 等

【論文 等】
[1]. Precise Deposition of Carbon Nanotube Bundles by Inkjet-Printing on a CMOS-Compatible Platform
Materials 15/14 4935-1-9 (2022年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] R. S. Singh, K. Takagi, T. Aoki, J.-H. Moon, Y. Neo, F. Iwata, H. Mimura, and D. Moraru [DOI]
[2]. Room-temperature single-electron tunneling in highly-doped silicon-on-insulator nanoscale field-effect transistors
Applied Physics Express 15/6 065003_1-4 (2022年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] T. Teja. Jupalli, A. Debnath, G. Prabhudesai, K. Yamaguchi, P. Jeevan Kumar, Y. Ono, D. Moraru [DOI]
[3]. Probing ionization characteristics of under-water plasma arc discharge using simultaneous current and voltage versus time measurement in carbon nanoparticle synthesis
Micro and Nano Engineering 14/ 100099-1-7 (2021年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] M. Anwar, T. E. Saraswati, L. Anjarwati, D. Moraru, A. Udhiarto, F. Adriyanto, H. Maghfiroh, R. Nuryadi [DOI]
[4]. Electron transport via a few-dopant cluster in the presence of counter-dopants in silicon nanowire transistors
Applied Physics Express 14/5 055002_1-6 (2021年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] C. Pandy, G. Prabhudesai, K. Yamaguchi, V N Ramakrishnan, Y. Neo, H. Mimura, D. Moraru [DOI]
[5]. Band-to-band tunneling mechanism observed at room temperature in lateral non-degenerately doped nanoscale p-n and p-i-n silicon devices
Japanese Journal of Applied Physics 60/2 024001-1-7 (2021年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] A. Udhiarto, R. Nuryadi, M. Anwar, G. Prabhudesai, D. Moraru [DOI]
[6]. Coulomb-blockade transport in selectively-doped Si nano-transistors
Applied Physics Express 12/8 085004_1-5 (2019年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] A. Afiff, A. Samanta, A. Udhiarto, H. Sudibyo, M. Hori, Y. Ono, M. Tabe, D. Moraru [DOI]
[7]. Single-charge band-to-band tunneling via multiple-dopant clusters in nanoscale Si Esaki diodes
Appl. Phys. Lett. 114/24 243502_1-5 (2019年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] G. Prabhudesai, M. Muruganathan, L.T. Anh, H. Mizuta, M. Hori, Y. Ono, M. Tabe, D. Moraru [DOI]
[8]. Electron aspirator using electron-electron scattering in nanoscale silicon
Nature Communications 9/ 1-8 (2018年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] H.Firdaus, T.Watanabe, M.Hori, D.Moraru, Y.Takahashi, A. Fujiwara, Y.Ono [DOI]
[9]. Detection of single holes generated by impact ionization in silicon
Applied Physics Letters 113/ - (2018年) [査読] 無 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] H.Firdaus, T. Watanabe, M.Hori, D.Moraru, Y.Takahashi, A.Fujiwara and Y.Ono [DOI]
[10]. Phosphorus doped p-type MoS2 polycrystalline thin films via direct sulfurization of Mo film
AIP Advances 8/2 025009_1-8 (2018年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]T. Momose [共著者]A. Nakamura,D. Moraru,M. Shimomura [DOI]
[11]. A statistical study on the formation of a-few-dopant quantum dots in highly-doped Si nanowire transistors
IEEE Xplore (2017 15th International Conference on Quality in Research, QiR: International Symposium on Electrical and Computer Engineering) (vol)/(num) 74-78 (2017年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]A. Afiff [共著者]T. Hasan,A. Udhiarto,H. Sudibyo,D. Hartanto,A. Samanta,M. Muruganathan,H. Mizuta, M. Tabe,D. Moraru [DOI]
[12]. Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors
Applied Physics Letters 110/9 093107_1-5 (2017年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]D. Moraru [共著者]A. Samanta,M.Muruganathan,M.Hori,Y.Ono,H.Mizuta,M.Tabe,D.Moraru [DOI]
[13]. Inter-band Current Enhancement by Dopant-Atoms in Low-Dimensional pn Tunnel Diodes
Springer (vol)/(num) 95-101 (2016年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]D.Moraru [共著者]M.Muruganathan,L.T.Anh,R.Nuryadi,H.Mizuta,M.Tabe [DOI]
[14]. Toward Room Temperature Operation of Dopant Atom Transistors
Springer (vol)/(num) 83- 88 (2016年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]M.Tabe [共著者]A.Samanta,D.Moraru [DOI]
[15]. Atomistic nature in band-to-band tunneling in two-dimensional silicon pn tunnel diodes
Applied Physics Letters 108/9 - (2016年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]M. Tabe [共著者]H. N. Tan; T. Mizuno; M. Muraganathan; L. T. Anh; H. Mizuta; R. Nuryadi; D. Moraru [DOI]
[16]. Electric-field-assisted formation of an interfacial double-donor molecule in silicon nano-transistors
Scientific Reports 5/ 17377-1-10 (2015年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]A. Samanta [共著者]D. Moraru, T. Mizuno, M. Tabe [URL]
[17]. Effect of individual dopants in nano-SOI-MOSFETs and nano-pn-diodes
ECS Transactions 69/10 189-195 (2015年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]M. Tabe [共著者]D. Moraru, A. Samanta, K. Tyszka, H. N. Tan, Y. Takasu, R. Jablonski, L. T. Anh, H. Mizuta, T. Mizuno [URL]
[18]. Tunneling in systems of coupled dopant-atoms in Si nanodevices
Nanoscale Research Letters 10/ - (2015年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]D. Moraru [共著者]A. Samanta, K. Tyszka, L. T. Anh, M. Manoharan, T. Mizuno, R. Jablonski, H. Mizuta, M. Tabe [URL]
[19]. Physics of strongly-coupled dopant-atoms in nanodevices
International Journal of Technology 6/6 1057-1064 (2015年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Daniel Moraru [共著者]K. Tyszka; Y. Takasu; A. Samanta; T. Mizuno; R. Jablonski; M. Tabe [URL]
[20]. Effect of selective doping on the spatial dispersion of donor-induced quantum dots in Si nanoscale transistors
Applied Physics Express 8/ 094202-1-4 (2015年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]K. Tyszka [共著者]D. Moraru,A. Samanta,T. Mizuno,R. Jablonski,M. Tabe [DOI]
[21]. Linear I-V characteristics of highly-doped SOI p-i-n diode for low temperature measurement
International Journal of Technology 6/3 318-326 (2015年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]A.A.N.G. Sapteka [共著者]H. N. Tan, R. Unno, D. Moraru, A. Udhiarto, S. Purwiyanti, M. Tabe, D. Hartanto, H. Sudibyo
[22]. Tunneling transport in quantum dots formed by coupled dopant atoms
Advanced Materials Research 1117/ 78-81 (2015年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]D. Moraru [共著者]A. Samanta,T. Tsutaya,Y. Takasu,T. Mizuno,M. Tabe [DOI]
[23]. Kelvin probe force microscope observation of donors’ arrangement in Si transistor channel
Advanced Materials Research 1117/ 82-85 (2015年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]K. Tyszka [共著者]D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [DOI]
[24]. Comparative study of donor-induced quantum dots in Si nano-channels by single-electron transport characterization and Kelvin probe force microscopy
Journal of Applied Physics 117/24 - (2015年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]K. Tyszka [共著者]D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [DOI]
[25]. The impacts of electronic state hybridization on the binding energy of single phosphorus donor electrons in extremely downscaled silicon nanostructures
Journal of Applied Physics 116/6 063705-1-9 (2014年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]L. T. Anh [共著者]D. Moraru,M. Manoharan,M. Tabe,H. Mizuta [DOI]
[26]. Transport spectroscopy of coupled donors in silicon nano-transistors
Scientific Reports 4/ - (2014年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]D. Moraru [共著者]A. Samanta,L. T. Anh,T. Mizuno,H. Mizuta,M. Tabe [URL]
[27]. Observation of tunneling effects in lateral nanowire pn junctions
Makara Journal of Technology 18/2 91-95 (2014年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]S. Purwiyanti [共著者]A. Udhiarto,D. Moraru,T. Mizuno,D. Hartanto,M. Tabe [URL]
[28]. Potential profile and photovoltaic effect in nanoscale lateral pn junction observed by Kelvin probe force microscopy
Thin Solid Films 557/ 249-253 (2014年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]R. Nowak [共著者]D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [URL]
[29]. Individuality of dopants in silicon nano-pn junctions
Materials Science 20/2 129-131 (2014年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]D. Moraru [共著者]S. Purwiyanti,R. Nowak,T. Mizuno,A. Udhiarto,D. Hartanto,R. Jablonski,M. Tabe [URL]
[30]. Experimental and ab initio study of donor state deepening in nanoscale SOI-MOSFETs
Transactions of the Materials Research Society of Japan 38/2 261-264 (2013年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]D. Moraru [共著者]E. Hamid,Y. Kuzuya,T. Mizuno,L. T. Anh,H. Mizuta,M. Tabe [URL]
[31]. Experimental and ab initio study of donor state deepening in nanoscale SOI-MOSFETs
Transactions of the Materials Research Society of Japan 38/2 261-264 (2013年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]D. Moraru [共著者]E. Hamid,Y. Kuzuya,T. Mizuno,L. T. Anh,H. Mizuta,M. Tabe [URL]
[32]. Dopant-atom-based tunnel SOI-MOSFETs
ECS Transactions 58/9 89-95 (2013年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]M. Tabe [共著者]D. Moraru,E. Hamid,A. Samanta,L. T. Anh,T. Mizuno,H. Mizuta [URL]
[33]. Dopant-induced random telegraph signal in nanoscale lateral silicon pn diodes
Applied Physics Letters 103/24 243102-1-4 (2013年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]S. Purwiyanti [共著者]R. Nowak,D. Moraru,T. Mizuno,D. Hartanto,R. Jablonski,M. Tabe [DOI]
[34]. Observation of photovoltaic effect and single-photon detection in nanowire silicon pn-junction
Makara Journal of Technology 17/2 64-68 (2013年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]A. Udhiarto [共著者]S. Purwiyanti,D. Moraru,T. Mizuno,M. Tabe [URL]
[35]. Effect of deep-level dopants on the electronic potential of thin Si pn junctions observed by Kelvin probe force microscope
Applied Physics Letters 102/8 083109-1-4 (2013年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]R. Nowak [共著者]D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [DOI]
[36]. Electron-tunneling operation of single-donor-atom transistors at elevated temperatures
Physical Review B 87/8 - (2013年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]E. Hamid [共著者]D. Moraru,Y. Kuzuya,T. Mizuno,L. T. Anh,H. Mizuta,M. Tabe [DOI]
[37]. Photon-induced random telegraph signal due to potential fluctuation of a single donor-acceptor pair in nanoscale Si p-n junctions
Applied Physics Express 5/ 112201-1-3 (2012年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]A. Udhiarto [共著者]D. Moraru,S. Purwiyanti,Y. Kuzuya,T. Mizuno,H. Mizuta,M. Tabe [DOI]
[38]. Electron filling in phosphorus donors embedded in silicon nanostructures observed by KFM technique
Journal of Advanced Research in Physics 3/2 021202-1-3 (2012年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]R. Nowak [共著者]M. Anwar,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe [URL]
[39]. 個々のドーパント原子を利用したシリコンナノデバイス -デバイス特性とフォトンセンシング機能-
応用物理 81/2 147-150 (2012年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]M. Tabe [共著者]D. Moraru,A. Udhiarto,T. Mizuno
[40]. Effect of donor-level deepening in nm-scale Si SOI-MOSFETs
Journal of Advanced Research in Physics 2/1 011111-1-011111-3 (2011年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]M. Tabe [共著者]D. Moraru,E. Hamid,M. Anwar,R. Nowak,Y. Kuzuya,T. Mizuno [URL]
[41]. Temperature evolution of electron transport in single-donor transistors
Journal of Advanced Research in Physics 2/1 011112-1-011112-3 (2011年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]D. Moraru [共著者]E. Hamid,A. Udhiarto,T. Mizuno,M. Tabe [URL]
[42]. Effect of electron injection into phosphorus donors in silicon-on-insulator channel observed by Kelvin probe force microscopy
Applied Physics Letters 99/21 213101-1-3 (2011年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]M. Anwar [共著者]R. Nowak,D. Moraru,A. Udhiarto,T. Mizuno,R. Jablonski,M. Tabe [DOI]
[43]. Trapping of a photoexcited electron by a donor in nanometer-scale phosphorus-doped silicon-on-insulator field-effect transistors
Applied Physics Letters 99/11 113108-1-3 (2011年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]A. Udhiarto [共著者]D. Moraru,T. Mizuno,M. Tabe [備考] selected for the Virtual Journal of Nanoscale Science & Technology, vol. 24, no. 13, September 26th, 2011
[DOI]
[44]. Single-electron charging in phosphorus donors in silicon observed by low-temperature Kelvin probe force microscope
Japanese Journal of Applied Physics 50/4 08LB10-1-4 (2011年) [査読] 無 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]M. Anwar [共著者]Y. Kawai,D. Moraru,R. Nowak,R. Jablonski,T. Mizuno,M. Tabe [URL]
[45]. Atom devices based on single dopants in silicon nanostructures
Nanoscale Research Letters 6/ - (2011年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]D. Moraru [共著者]A. Udhiarto,M. Anwar,R. Nowak,R. Jablonski,E. Hamid,J. C. Tarido,T. Mizuno,M. Tabe [URL]
[46]. Memory effects based on dopant atoms in nano-FETs
Advanced Materials Research 222/ 122-125 (2011年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]D. Moraru [共著者]E. Hamid,J. C. Tarido,S. Miki,T. Mizuno,M. Tabe [URL]
[47]. Si-based single-dopant atom devices
Advanced Materials Research 222/ 205-208 (2011年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]M. Tabe [共著者]D. Moraru,A. Udhiarto,S. Miki,M. Anwar,Y. Kawai,T. Mizuno [URL]
[48]. Single-photon detection by Si single-electron FETs
Physica Status Solidi A 203/3 646-651 (2011年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]M. Tabe [共著者]A. Udhiarto,D. Moraru,T. Mizuno [DOI]
[49]. Tunable single-electron turnstile using discrete dopants in nanoscale SOI-FETs
Key Engineering Materials 470/ 22-27 (2011年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]D. Moraru [共著者]K. Yokoi,R. Nakamura,S. Miki,T. Mizuno,M. Tabe [URL]
[50]. KFM observation of electron charging and discharging in phosphorus-doped SOI channel
Key Engineering Materials 470/ 33-38 (2011年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]M. Anwar [共著者]D. Moraru,Y. Kawai,M. Ligowski,T. Mizuno,R. Jablonski,M. Tabe [URL]
[51]. Single-electron transfer between two donors in thin nanoscale silicon-on-insulator field-effect transistors
Applied Physics Letters 97/26 262101- (2010年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]Earfan Hamid [共著者]D. Moraru,J. C. Tarido,S. Miki,T. Mizuno,M. Tabe [備考] selected for the Virtual Journal of Nanoscale Science & Technology, vol. 23, no. 1, Jan. 3rd 2011
[URL]
[52]. Electrical control of capacitance dispersion for single-electron turnstile operation in common-gated junction arrays
Journal of Applied Physics 108/5 053710-1-5 (2010年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]Kiyohito Yokoi [共著者]D. Moraru, T. Mizuno, and M. Tabe [DOI]
[53]. Single-electron transport through single dopants in a dopant-rich environment
Physical Review Letters 105/1 016803- (2010年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]Michiharu Tabe [共著者]D. Moraru, M. Ligowski, M. Anwar, R. Jablonski, Y. Ono, and T. Mizuno [備考] selected for the Virtual Journal of Nanoscale Science & Technology, vol. 22, no. 3, July 19th 2010
[DOI]
[54]. Observation of discrete dopant potential and its application to Si single-electron devices
Thin Solid Films 518/6 S38-S43 (2010年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]Michiharu Tabe [共著者]D. Moraru, M. Ligowski, M. Anwar, K. Yokoi, R. Jablonski, and T. Mizuno [URL]
[55]. Breakthrough of advanced nano-silicon devices
Indonesian Nanoletter 3/1 17-21 (2010年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]Michiharu Tabe [共著者]D. Moraru, M. Anwar, K. Yokoi, R. Nakamura, M. Ligowski, S. Miki, and T. Mizuno
[56]. Detection of individual dopants in single-electron devices – a study by KFM observation and simulation
Journal of Automation, Mobile Robotics & Intelligent Systems 3/4 130-133 (2009年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]Maciej Ligowski [共著者]D. Moraru, M. Anwar, J. C. Tarido, T. Mizuno, M. Tabe, and R. Jablonski [URL]
[57]. Single-electron transport characteristics in quantum dot arrays due to ionized dopants
Journal of Automation, Mobile Robotics & Intelligent Systems 3/4 52-54 (2009年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Daniel Moraru [共著者]M. Ligowski, J. C. Tarido, S. Miki, R. Nakamura, K. Yokoi, T. Mizuno, and M. Tabe [URL]
[58]. Single-Electron Transfer by Inter-Dopant Coupling Tuning in Doped Nanowire Silicon-on-Insulator Field-Effect Transistors
Applied Physics Express 2/7 071201-1-3 (2009年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Daniel Moraru [共著者]M. Ligowski, K. Yokoi, T. Mizuno, and M. Tabe [URL]
[59]. Single-gated single-electron transfer in non-uniform arrays of quantum dots
Japanese Journal of Applied Physics 48/2 024503-1-7 (2009年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]Kiyohito Yokoi [共著者]D. Moraru, M. Ligowski, and M. Tabe [備考] selected for the Virtual Journal of Nanoscale Science & Technology, vol. 19, no. 19, May 11th 2009
[URL]
[60]. Si single-electron SOI-MOSFETs: Interplay with individual dopants and photons
2009 Materials Research Society Bulletin (Proceedings of MRS Fall Meeting 2008) 1145-MM10-01/ 1-7 (2009年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]Michiharu Tabe [共著者]Z. A. Burhanudin, R. Nuryadi, D. Moraru, M. Ligowski, R. Jablonski, and T. Mizuno [DOI]
[61]. Observation of individual dopants in a thin silicon layer by low temperature Kelvin Probe Force Microscope
Applied Physics Letters 93/14 142101- (2008年) [査読] 無 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]Maciej Ligowski [共著者]D. Moraru, M. Anwar, T. Mizuno, R. Jablonski, and M. Tabe [DOI]
[62]. Si multidot FETs for single-electron transfer and single-photon detection
Acta Physica Polonica A 113/3 811-814 (2008年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]Michiharu Tabe [共著者]R. Nuryadi, D. Moraru, Z. A. Burhanudin, K. Yokoi, and H. Ikeda [URL]
[63]. Manipulation of single electrons in Si nanodevices – interplay with photons and ions
Recent Advances in Mechatronics (Proceedings of Mechtronics 2007 Conference) (Springer) / 500-504 (2007年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]Michiharu Tabe [共著者]R. Nuryadi, Z. A. Burhanudin, D. Moraru, K. Yokoi, and H. Ikeda [DOI]
[64]. Quantized-electron transfer through random multiple junctions in phosphorous-doped silicon nanowires
Physical Review B 76/7 075332- (2007年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Daniel Moraru [共著者]Y. Ono, H. Inokawa, and M. Tabe [DOI]
[65]. Single-electron transfer in phosphorous-doped Si nanowire FETs
Reports of the Graduate School of Electronic Science and Technology, Shizuoka University 28/ 15-20 (2007年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Daniel Moraru [共著者]Y. Ono, H. Inokawa, K. Yokoi, R. Nuryadi, H. Ikeda, and M. Tabe [URL]
[66]. Fowler-Nordheim current oscillations in Si(111)/SiO2/Si(111) tunneling structures
Japanese Journal of Applied Physics 45/11 L316-L318 (2006年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Daniel Moraru [共著者]H. Kato, S. Horiguchi, Y. Ishikawa, H. Ikeda, and M. Tabe [URL]