静岡大学：教員データベース - 猪川洋（Inokawa Hiroshi）

静岡大学教員データベース - 教員個別情報 : 猪川洋（Inokawa Hiroshi）

論文　等

【論文　等】
[1]. Folded-Dipole Antenna Geometrical Analysis for THz Microbolometer IEEE Access 11/ 25713-25722 （2023年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 責任著者 [著者] Arie Pangesti Aji, Hiroaki Satoh, Catur Apriono, Eko Tjipto Rahardjo, Hiroshi Inokawa [DOI] [2]. Refractive Index Measurement Using SOI Photodiode with SP Antenna toward SOI CMOS-Compatible Integrated Optical Biosensor Sensors 23/2 568_1-568_17 （2023年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 共著者 [著者] Hiroaki Satoh, Koki Isogai, Shohei Iwata, Taiki Aso, Ryosuke Hayashi, Shu Takeuchi, Hiroshi Inokawa [DOI] [3]. Angle-sensitive pixel based on silicon-on-insulator p-n junction photodiode with aluminum grating gate electrode IEICE Electronics Express 19/21 20220428_1-20220428_5 （2022年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 共著者 [著者] Hiroaki Satoh, Ken Kawakubo, Atsushi Ono, Hiroshi Inokawa [DOI] [4]. Dynamic Single-Electron Transistor Modeling for High-Frequency Capacitance Characterization Applied Sciences 12/16 8139_1-8139_11 （2022年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] Alka Singh, Tomoki Nishimura, Hiroaki Satoh, Hiroshi Inokawa [DOI] [5]. Responsivity and NEP Improvement of Terahertz Microbolometer by High-Impedance Antenna Sensors 22/14 5107_1-5107_17 （2022年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 責任著者 [著者] Arie Pangesti Aji, Hiroaki Satoh, Catur Apriono, Eko Tjipto Rahardjo, Hiroshi Inokawa [DOI] [6]. High-Frequency Rectifying Characteristics of Metallic Single-Electron Transistor with Niobium Nanodots Jpn. J. Appl. Phys. 61/ SC1063_1-SC1063_7 （2022年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] Yoshiaki Iwata, Tomoki Nishimura, Alka Singh, Hiroaki Satoh, Hiroshi Inokawa [DOI] [7]. FDTD Study on Evolution of Trimer Silver@Silica Nanospheres to Dimer for SERS Characteristics Plasmonics / - （2021年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 共著者 [著者] Anitharaj Nagarajan, Aruna Priya Panchanathan, Pandian Chelliah, Hiroaki Satoh, Hiroshi Inokawa [DOI] [8]. Measurement of Thermal Conductivity and Thermal Diffusivity of 1-Dimensional-System Material by Scanning Electron Microscopy and Infrared Thermography AIP Advances 11/9 095101_1-095101_6 （2021年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 共著者 [著者] Palanisamy Baskaran, Ryo Nanao, Yojiro Yamanashi, Masaki Sakaida, Yuhei Suzuki, Mani Navaneethan, Kuruvankatil Dharmajan Nisha, Yasuhiro Hayakawa, Hiroshi Inokawa, Masaru Shimomura, Kenji Murakami, Hiroya Ikeda [DOI] [9]. Real-time FPGA-based signal processing for silicon-on-insulator MOSFET single-photon detector: study on photon number statistics Jpn. J. Appl. Phys. 60/ 092004_1-092004_5 （2021年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] Revathi Manivannan, Hiroaki Satoh, Hiroshi Inokawa [DOI] [10]. Utility of a Reverse Double-drift Structure for Fabricating GaN IMPATT Diode Operating in the Terahertz Regime Journal of Nano- and Electronic Physics 13/3 03014-1-03014-4 （2021年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 責任著者 [著者] Sahanowaj Khan, Rishav Dutta, Aritra Acharyya, Arindam Biswas, Hiroshi Inokawa, Rudra Sankar Dhar [DOI] [11]. Tunable graphene nanopatch antenna design for on-chip integrated terahertz detector arrays with potential application in cancer imaging Nanomedicine 16/12 1035-1047 （2021年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 共著者 [著者] Debabrata Samanta, Karthikeyan MP, Amit Banerjee, Hiroshi Inokawa [DOI] [12]. Design and Development of Terahertz Medical Screening Devices Lecture Notes in Electrical Engineering 740/ 395-404 （2021年） [査読] 無 [国際共著論文] 該当する [責任著者・共著者の別] 共著者 [著者] Karthikeyan M P, Debabrata Samanta, Amit Banerjee, Arjya Roy, Hiroshi Inokawa [備考] In: Chakraborty M., Jha R.K., Balas V.E., Sur S.N., Kandar D. (eds) Trends in Wireless Communication and Information Security, Springer, Singapore (20 [DOI] [13]. Nanometer-Scale Photodetectors for High Performance and Unique Functionality Lecture Notes in Electrical Engineering 740/ 389-394 （2021年） [査読] 無 [国際共著論文] 該当する [責任著者・共著者の別] 責任著者 [著者] Hiroshi Inokawa, Hiroaki Satoh, Amit Banerjee, Anitharaj Nagarajan, Revathi Manivannan, Alka Singh, Tomoki Nishimura, Koki Isogai [備考] In: Chakraborty M., Jha R.K., Balas V.E., Sur S.N., Kandar D. (eds) Trends in Wireless Communication and Information Security, Springer, Singapore (20 [DOI] [14]. Angle-Sensitive Detector Based on Silicon-On-Insulator Photodiode Stacked with Surface Plasmon Antenna Sensors 20/19 5543_1-5543_14 （2020年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 責任著者 [著者] Anitharaj Nagarajan, Shusuke Hara, Hiroaki Satoh, Aruna Priya Panchanathan, Hiroshi Inokawa [DOI] [15]. Performance Comparison of SOI-Based Temperature Sensors for Room-Temperature Terahertz Antenna-Coupled Bolometers: MOSFET, PN Junction Diode and Resistor Micromachines 11/8 718_1-718_16 （2020年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 責任著者 [著者] Durgadevi Elamaran, Yuya Suzuki, Hiroaki Satoh, Amit Banerjee, Norihisa Hiromoto, Hiroshi Inokawa [DOI] [16]. Angular selectivity of SOI photodiode with surface plasmon antenna IEICE Electronics Express 17/13 20200187_1-20200187_6 （2020年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 責任著者 [著者] Anitharaj Nagarajan, Shusuke Hara, Hiroaki Satoh, Aruna Priya Panchanathan, Hiroshi Inokawa [DOI] [17]. Si Single-Electron Transistor Characteristics under Photo-Excitation ECS Transactions 92/4 47-56 （2019年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 共著者 [著者] Yasuo Takahashi, Michito Sinohara, Masashi Arita, Atsushi Tsurumaki-Fukuchi, Akira Fujiwara, Yukinori Ono, Katsuhiko Nishiguchi, Hiroshi Inokawa [DOI] [18]. Optimization of electric field enhancement of Ag@SiO2 trimer nanospheres by finite difference time domain method Applied Surface Science 495/ 107373_1-107373_7 （2019年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 責任著者 [著者] Anitharaj Nagarajan, Aruna Priya Panchanathan, Pandian Chelliah, Hiroaki Satoh, Hiroshi Inokawa [DOI] [19]. Development of carbon coated NiS2 as positive electrode material for high performance asymmetric supercapacitor Composites Part B: Engineering 177/ 107373_1-107373_11 （2019年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 共著者 [著者] Souvik Ghosh, J. Sharath Kumar, Naresh Chandra Murmu, R. Sankar Ganesh, Hiroshi Inokawa, Tapas Kuila [DOI] [20]. Performance improvement of on-chip integrable terahertz microbolometer arrays using nanoscale meander titanium thermistor J. Appl. Phys. 125/21 214502_1-214502_12 （2019年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] Amit Banerjee, Hiroaki Satoh, Durgadevi Elamaran, Yash Sharma, Norihisa Hiromoto, Hiroshi Inokawa [DOI] [21]. Investigation of silicon-on-insulator CMOS integrated thermocouple and heater for antenna-coupled bolometer Jpn. J. Appl. Phys. 58/ SDDE08_1-SDDE08_7 （2019年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] Durgadevi Elamaran, Hiroaki Satoh, Norihisa Hiromoto, Hiroshi Inokawa [DOI] [22]. Optimization of Active Surface area of Flower like MoS2 using V-doping towards Enhanced Hydrogen Evolution Reaction in Acidic and Basic Medium Applied Catalysis B: Environmental 254/ 432-442 （2019年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 共著者 [著者] Saikat Bolar, Subhasis Shit, J Sharath Kumar, Naresh Chandra Murmu, R Sankar Ganesh, Hiroshi Inokawa, Tapas Kuila [DOI] [23]. A SILAR method for the fabrication of layer-by-layer assembled Cu2O-reduced graphene oxide composite for non-enzymatic detection of hydrogen peroxide Materials Research Express 6/2 025045_1-025045_11 （2018年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 共著者 [著者] J Sharath Kumar, Naresh C Murmu, Amit Banerjee, Ramaraju Sankar Ganesh, Hiroshi Inokawa, Tapas Kuila [DOI] [24]. Modeling, Simulation, Fabrication, and Characterization of a 10-μW/cm² Class Si-Nanowire Thermoelectric Generator for IoT Applications IEEE Trans. Electron Devices 65/11 5180-5188 （2018年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 共著者 [著者] Motohiro Tomita, Shunsuke Oba, Yuya Himeda, Ryo Yamato, Keisuke Shima, Takehiro Kumada, Mao Xu, Hiroki Takezawa, Kohhei Mesaki, Kazuaki Tsuda, Shuichiro Hashimoto, Tianzhuo Zhan, Hui Zhang, Yoshinari Kamakura, Yuhhei Suzuki, Hiroshi Inokawa, Hiroya Ikeda, Takashi Matsukawa, Takeo Matsuki, Takanobu Watanabe [DOI] [25]. Noise Performance of Magnetic Field Tunable Avalanche Transit Time Source International Journal of Electronics and Communication Engineering 12/10 718-728 （2018年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 共著者 [著者] Partha Banerjee, Aritra Acharyya, Arindam Biswas, A. K. Bhattacharjee, Amit Banerjee, Hiroshi Inokawa [DOI] [26]. 1.0 THz GaN IMPATT Source: Effect of Parasitic Series Resistance J. Infrared Millim. Terahertz Waves 39/10 954-974 （2018年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 責任著者 [著者] Arindam Biswas, Sayantan Sinha, Aritra Acharyya, Amit Banerjee, Srikanta Pal, Hiroaki Satoh, Hiroshi Inokawa [DOI] [27]. Application of bow-tie surface plasmon antenna to silicon on insulator nanowire photodiode for enhanced light absorption IEICE Electronics Express 15/11 20180328_1-20180328_10 （2018年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] Yash Sharma, Hiroaki Satoh, Hiroshi Inokawa [DOI] [28]. Optimization of narrow width effect on titanium thermistor in uncooled antenna-coupled terahertz microbolometer Jpn. J. Appl. Phys. 57/4S 04FC09_1-04FC09_7 （2018年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] Amit Banerjee,Hiroaki Satoh,Durgadevi Elamaran,Yash Sharma,Norihisa Hiromoto,Hiroshi Inokawa, [DOI] [29]. Characterization of platinum and titanium thermistors for terahertz antenna-coupled bolometer applications Sensors and Actuators: A Physical 273/ 49-57 （2018年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] Amit Banerjee,Hiroaki Satoh,Yash Sharma,Norihisa Hiromoto,Hiroshi Inokawa, [DOI] [30]. Modified electrochemical charge storage properties of h-BN/rGO superlattice through the transition from n to p type semiconductor by fluorine doping Chem. Eng. J. 339/ 334-345 （2018年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 共著者 [著者] Sanjit Saha,Pranab Samanta,Naresh C. Murmu,Amit Banerjee,R Sankar Ganesh,Hiroshi Inokawa,Tapas Kuila, [DOI] [31]. Novel synthesis of a Cu2O-graphene nanoplatelet composite through a two-step electrodeposition method for selective detection of hydrogen peroxide New J. Chem. 42/5 3574-3581 （2018年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 共著者 [著者] J. Sharath Kumar,Naresh Chandra Murmu,Pranab Samanta,Amit Banerjee,R. Sankar Ganesh,Hiroshi Inokawa,Tapas Kuila, [DOI] [32]. Width dependence of platinum and titanium thermistor characteristics for application in room-temperature antenna-coupled terahertz microbolometer Jpn. J. Appl. Phys. 56/4S 04CC07_1-5 （2017年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 責任著者 [著者] Amit Banerjee,Hiroaki Satoh,Ajay Tiwari,Catur Apriono,Eko Tjipto Rahardjo,Norihisa Hiromoto,Hiroshi Inokawa [DOI] [33]. Strong Quantum Confinement Effects in Nanometer Devices with Graphene Directly Grown on Insulator by Catalyst-free Chemical Vapor Deposition Current Graphene Science 1/1 44-48 （2017年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] Hiroto Sato,Atsushi Nakamura,Amit Banerjee,Kenji Yamada,Hiroaki Satoh,Jiro Temmyo,Hiroshi Inokawa, [DOI] [34]. Identification of Double Quantum Dots in Nanowire Devices by Single-Gate Sweeps JJAP Conf. Proc. 4/ - （2016年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] Hiroshi Inokawa,Yasuo Takahashi, [DOI] [35]. Fabrication and single-electron-transfer operation of a triple-dot single-electron transistor J. Appl. Phys. 118/21 214305_1-214305_6 （2015年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Mingyu Jo,Takafumi Uchida,Atsushi Tsurumaki-Fukuchi,Masashi Arita,Akira Fujiwara,Yukinori Ono,Katsuhiko Nishiguchi,Hiroshi Inokawa,Yasuo Takahashi, [共著者]Mingyu Jo,Takafumi Uchida,Atsushi Tsurumaki-Fukuchi,Masashi Arita,Akira Fujiwara,Yukinori Ono,Katsuhiko Nishiguchi,Hiroshi Inokawa,Yasuo Takahashi, [備考] IF 2.183 (2014) [DOI] [36]. Fabrication and analytical modeling of integrated heater and thermistor for antenna-coupled bolometers Sensors and Actuators: A Physical 222/ 160-166 （2015年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Ajay Tiwari,Hiroaki Satoh,Makoto Aoki,Masanori Takeda,Norihisa Hiromoto,Hiroshi Inokawa [共著者]Ajay Tiwari,Hiroaki Satoh,Makoto Aoki,Masanori Takeda,Norihisa Hiromoto,Hiroshi Inokawa, [備考] IF1.943(2013) [DOI] [37]. THz Antenna-Coupled Microbolometer with 0.1-µm-wide Titanium Thermistor International Journal of ChemTech Research 7/2 1019-1026 （2015年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Ajay Tiwari,Hiroaki Satoh,Makoto Aoki,Masanori Takeda,Norihisa Hiromoto,Hiroshi Inokawa [共著者]Ajay Tiwari,Hiroaki Satoh,Makoto Aoki,Masanori Takeda,Norihisa Hiromoto,Hiroshi Inokawa [備考] IF不明 [URL] [38]. Analysis of RF Reflection Method for MOSFET Electrometer Fabricated by Standard Integrated-Circuit Technology International Journal of ChemTech Research 7/3 1623-1627 （2015年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Hiroshi Inokawa,Mitsuru Kawai,Hiroaki Satoh, [共著者]Hiroshi Inokawa,Mitsuru Kawai,Hiroaki Satoh, [備考] IF不明 [URL] [39]. Effects of substrate voltage on noise characteristics and hole lifetime in SOI metal-oxide-semiconductor field-effect transistor photon detector Optics Express 22/18 22072-22079 （2014年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 責任著者 [著者] Dedy Septono Catur Putranto,Purnomo Sidi Priambodo,Djoko Hartanto,Wei Du,Hiroaki Satoh,Atsushi Ono,Hiroshi Inokawa, [備考] IF3.525(2013) [URL] [DOI] [40]. Broadband absorption enhancement of thin SOI photodiode with high-density gold nanoparticles Optical Materials Express 4/4 725-732 （2014年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] Atsushi Ono,Yasushi Enomoto,Yasufumi Matsumura,Hiroaki Satoh,Hiroshi Inokawa [備考] 2012 IF 2.616 [DOI] [41]. High-speed operation of Si single-electron transistor ECS Transactions 58/9 73-80 （2013年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Yasuo Takahashi,Masashi Arita,Akira Fujiwara,Hiroshi Inokawa [共著者]Hiroto Takenaka,Takafumi Uchida [DOI] [42]. Material Dependence of Metal Grating on SOI Photodiode for Enhanced Quantum Efficiency IEEE Photonics Technology Letters 25/12 1133-1136 （2013年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] Hiroaki Satoh,Ken Kawakubo,Atsushi Ono,Hiroshi Inokawa [備考] IF 2.038 [DOI] [43]. Enhancement of SOI Photodiode Sensitivity by Aluminum Grating ECS Transactions 53/5 127-130 （2013年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] Hiroshi Inokawa,Hiroaki Satoh,Ken Kawakubo,Atsushi Ono [備考] IF不明 [44]. Analysis of Microbolometer Characteristics for Antenna-Coupled THz Detectors Asian J. Chem. 25/Supplementary Issue S358-S360 （2013年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Hiroshi Inokawa,Ajay Tiwari [共著者]Ajay Tiwari,Hiroaki Satoh,Makoto Aoki,Masanori Takeda,Norihisa Hiromoto [45]. Enhanced Visible Light Sensitivity by Gold Line-and Space Grating Gate Electrode in Thin Silicon-On-Insulator p-n Junction Photodiode IEEE Trans. Electron Devices 60/2 812-818 （2013年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Hiroshi Inokawa,Hiroaki SATOH [共著者]Hiroaki SATOH,Atushi ONO [46]. A differential smoothing technique for the extraction of MOSFET threshold voltage using extrapolation in the linear region Solid-State Electronics 76/* 5-7 （2012年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 責任著者 [著者] [責任著者]Hiroshi Inokawa,Hongguan Yang [共著者]Hongguan Yang [47]. Single-Photon Detection by a Simple Silicon-on Insulator Metal-Oxide-Semiconductor Field-Effect Transistor Japanese Journal of Applied Physics 51/6 06FE01_1-06FE01_4 （2012年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Hiroshi Inokawa,Wei Du [共著者]Wei Du,Hiroaki SATOH,Atushi ONO [48]. Effect of Arrangement of Input Gates on Logic Switching Characteristics of Nanobot Array Device IEICE Transactions on Electronics E95.C/5 865-870 （2012年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 責任著者 [著者] [責任著者]Yasuo Takahashi,Hiroshi Inokawa,Jung-Bum Choi [共著者]Ming JO,Yuki KATO,Masashi ARITA,Yukinori ONO,Akira FUJIWARA [49]. Surface Plasmon Antenna with Gold Line and Space Grating for Enhanced Visible Light Detection by Silicon-On-Insulator Metal-Oxide-Semiconductor Photodiode IEEE Trans. Nanotechnol 11/2 346-351 （2012年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] Hiroshi Inokawa,Hiroaki Satoh [50]. Sensitivity Improvement of Silicon-On-Insulator Photodiode by Gold Nanoparticles with Substrate Bias Control APPLIED PHYSICS LETTERS 99/6 062105_1-3 （2011年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Atsushi Ono,Hiroshi Inokawa [共著者]Yuki Matsuo,Hiroaki Satoh [51]. SOI metal-oxide-semiconductor field-effect transistor photon detector based on single-hole counting OPTICS LETTERS 36/15 2800-2802 （2011年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Wei Du,Hiroshi Inokawa [共著者]Hiroaki Satoh,Atsushi Ono [52]. Electrical Characterization of Terphenyl-Based Molecular Devices JAPANESE JOURNAL OF APPLIED PHYSICS 50/7 071603-1~6 （2011年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Touichiro Goto,Hiroshi Inokawa [共著者]Yukinori Ono,Akira Fujiwara,Keiichi Torimitsu [53]. 表面プラズモンを利用した光検出器の性能向上(解説) 表面技術 62/6 291-295 （2011年） [査読] 無 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] 小野篤史,佐藤弘明,猪川洋 [54]. Single-Photon Detector Based on MOSFET Electrometer with Single-Electron Sensitivity Advanced Materials Research 222/ 3-7 （2011年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Hiroshi Inokawa [共著者]Wei Du,Mitsuru Kawai,Hiroaki Satoh,Atsushi Ono,Vipul Singh [55]. High-Efficiency SOI Photodetector Utilizing Surface Plasmon Resonance in Gold Corrugated Structure Advanced Materials Research 222/ 154-157 （2011年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Atsushi Ono,Hiroshi Inokawa [共著者]Hiroaki Satoh,Hiroshi Inokawa [56]. Investigation of Adhesion Materials for Gold Line-and-Space Surface Plasmon Antenna on SOI-MOS Photodiode Advanced Materials Research 222/ 201-204 （2011年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Hiroshi Inokawa,Hiroaki Satoh [共著者]Yuki Matsuo,Hiroshi Inokawa,Atsushi Ono [57]. Si Nanodot Device Fabricated by Thermal Oxidation and Their Applications Key Engineering Materials 470/ 175-183 （2011年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 共著者 [著者] [責任著者]Yasuo Takahashi [共著者]Mingyu Jo,Takuya Kaizawa,Yuki Kato,Masashi Arita,Akira Fujiwara,Yukinori Ono,Hiroshi Inokawa,Jung-Bum Choi [58]. Fabrication Method of Sub-100 nm Metal-Oxide-Semiconductor Field-Effect Transistor with Thick Gate Oxide JAPANESE JOURNAL OF APPLIED PHYSICS 49/12 128002_1-2 （2010年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Vipul Singh,Hiroshi Inokawa [共著者]Hiroshi Inokawa,Tetsuo Endoh,Hiroaki Satoh [59]. Low Frequency Noise Characterization in Metal-Oxide-Semiconductor Field-Effect Transistor Based Charge Transfer Device at Room and Low Temperatures JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 49/3 034203_1-4 （2010年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Vipul Singh,Hiroshi Inokawa [共著者]Hiroshi Inokawa,Tetsuo Endoh,Hiroaki Satoh [60]. Fabrication of double-dot single-electron transistor in silicon nanowire THIN SOLID FILMS 518/6(1) S186-S189 （2010年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 共著者 [著者] [責任著者]Mingyu Jo [共著者]Takuya Kaizawa,Masashi Arita,Akira Fujiwara,Yukinori Ono,Hiroshi Inokawa,Jung-Bum Choi,Yasuo Takahashi [61]. ナノビジョンサイエンス-画像技術の新展開-(書評) 電子情報通信学会誌 92/12 1081-1081 （2009年） [査読] 無 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] 猪川洋 [62]. Analysis of Current Noise in MOSFET-Based Charge-Transfer Device Journal of Automation, Mobile Robotics & Intelligent Systems 3/4 72-75 （2009年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Hiroshi Inokawa [共著者]Vipul Singh,Hiroaki Satoh [63]. Geometrical effect in submicrometer channel organic field effect transistors THIN SOLID FILMS 518/2 579-582 （2009年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Touichiro Goto,Hiroshi Inokawa [共著者]Hiroshi Inokawa,Keiichi Torimitsu [64]. Single-Electron Device With Si Nanodot Array and Multiple Input Gates IEEE Trans. Nanotechnol. 8/4 535-541 （2009年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 共著者 [著者] [責任著者]Takuya Kaizawa,Yasuo Takahashi [共著者]Masashi Arita,Akira Fujiwara,Kenji Yamazaki,Yukinori Ono,Hiroshi Inokawa,Yasuo Takahashi,Jung-Bum Choi [65]. Full Adder Operation Based on Si Nanodot Array Device with Multiple Inputs and Outputs International Journal of Nanotechnology and Molecular Computation 1/2 58-69 （2009年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 共著者 [著者] [責任著者]Kaizawa Takuya,Takahashi Yasuo [共著者]Jo Mingyu,Arita Masashi,Fujiwara Akira,Yamazaki Kenji,Ono Yukinori,Inokawa Hiroshi,Takahashi Yasuo,Choi Jung-Bum [66]. Single-Electron-Resolution Electrometer Based on Field-Effect Transistor JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 47/11 8305-8310 （2008年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Katsuhiko Nishiguchi,Hiroshi Inokawa [共著者]Charlie Koechlin,Yukinori Ono,Akira Fujiwara,Hiroshi Inokawa,Hiroshi Yamaguchi [67]. Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability JOURNAL OF APPLIED PHYSICS 104/3 033710_1-12 （2008年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 共著者 [著者] [責任著者]Neil M. Zimmerman,Akira Fujiwara [共著者]William H. Huber,Brian Simonds,Emmanouel Hourdakis,Akira Fujiwara,Yukinori Ono,Yasuo Takahashi,Hiroshi Inokawa,Miha Furlan,Mark W. Keller [68]. A gate-defined silicon quantum dot molecule APPLIED PHYSICS LETTERS 92/22 6-6 （2008年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 共著者 [著者] [責任著者]Hongwu Liu,Yoshiro Hirayama [共著者]Toshimasa Fujisawa,Hiroshi Inokawa,Yukinori Ono,Akira Fujiwara,Yoshiro Hirayama [69]. ナノメータMOSFETにおける容量パラメータの直接測定電学論C 128/6 905-911 （2008年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]猪川洋 [共著者]藤原　聡,西口　克彦,小野　行徳,佐藤　弘明 [70]. Pauli-spin-blockade transport through a silicon double quantum dot PHYSICAL REVIEW B 77/7 073310_1-4 （2008年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 共著者 [著者] [責任著者]H. W. Liu,Y.Hirayama [共著者]T. Fujisawa,Y. Ono,H. Inokawa,A. Fujiwara,K. Takashina,Y. Hirayama [71]. Stochastic data processing circuit based on single electrons using nanoscale field-effect transistors APPLIED PHYSICS LETTERS 92/6 062105_1-3 （2008年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]K. Nishiguchi,H.Inokawa [共著者]Y. Ono,A. Fujiwara,H. Inokawa,Y. Takahashi [72]. Silicon single-charge transfer devices JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 69/2-3 702-707 （2008年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Yukinori Ono,Hiroshi Inokawa [共著者]Akira Fujiwara,Katsuhiko Nishiguchi,Yasuo Takahashi,Hiroshi Inokawa [73]. Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires PHYSICAL REVIEW B 76/7 075332_1-5 （2007年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Daniel Moraru,Yukinori Ono,Hiroshi Inokawa [共著者]Yukinori Ono,Hiroshi Inokawa,Michiharu Tabe [74]. Infrared detection with silicon nano-field-effect transistors APPLIED PHYSICS LETTERS 90/22 223108_1-3 （2007年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]K. Nishiguchi,H.Inokawa [共著者]Y. Ono,A. Fujiwara,H. Yamaguchi,H. Inokawa,Y. Takahashi [75]. Transfer and Detection of Single Electron using Metal-Oxide-Semiconductor Field-Effect-Transistor IEICE TRANSACTIONS ON ELECTRONICS E90C/5 943 -948 （2007年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 責任著者 [著者] [責任著者]W. C .Zhang,K.Nishiguchi,H.Inokawa,N.J.Wu [共著者]K. Nishiguchi,Y. Ono,A. Fujiwara,H. Yamaguchi,H. Inokawa,Y. Takahashi,N. J. Wu [76]. Design of a Two-Bit-per-Cell Content-Addressable Memory Using Single-Electron Transistors Journal of Multiple-Valued Logic and Soft Computing 13/3 249-266 （2007年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]K. Degawa,H.Inokawa [共著者]T. Aoki,T. Higuchi,H. Inokawa,Y. Takahashi [77]. Field-Effect Transistor with Deposited Graphite Thin Film JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 46/4B 2615-2617 （2007年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Hiroshi Inokawa [共著者]Masao Nagase,Shigeru Hirono,Touichiro Goto,Hiroshi Yamaguchi,Keiichi Torimitsu [78]. Impact of Space-Energy Correlation on Variable Range Hopping in a Transistor PHYSICAL REVIEW LETTERS 98/16 166601_1-4 （2007年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]J.-F. Morizur,Y.Ono,H.Inokawa [共著者]Y. Ono,H. Kageshima,H. Inokawa,H. Yamaguchi [79]. Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 46/4A 1731-1733 （2007年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Touichiro Goto,Hiroshi Inokawa [共著者]Hiroshi Inokawa,Koji Sumitomo,Masao Nagase,Yukinori Ono,Keiichi Torimitsu [80]. Mechanism of Metal-Semiconductor Transition in Electric Properties of Single-walled Carbon Nanotubes induced by Low-energy Electron Irradiation JOURNAL OF APPLIED PHYSICS 101/3 034317_1-4 （2007年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 共著者 [著者] [責任著者]Kenichi Kanzaki [共著者]Satoru Suzuki,Hiroshi Inokawa,Yukinori Ono,Aravind Vijayaraghavan,Yoshihiro Kobayashi [81]. Fast All-Optical Switching using Ion-Implanted Silicon Photonic Crystal Nanocavities APPLIED PHYSICS LETTERS 90/3 031115_1-3 （2007年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 共著者 [著者] [責任著者]Takasumi Tanabe,Masaya Notomi [共著者]Katsuhiko Nishiguchi,Akihiko Shinya,Eiichi Kuramochi,Hiroshi Inokawa,Masaya Notomi [82]. Long Retention of Gain-Cell Dynamic Random Access Memory With Undoped Memory Node IEEE ELECTRON DEVICE LETTERS 28/1 48-50 （2007年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Katsuhiko Nishiguchi,Hiroshi Inokawa [共著者]Akira Fujiwara,Yukinori Ono,Hiroshi Inokawa,Yasuo Takahashi [83]. Charge offset stability in tunable-barrier Si single-electron tunneling devices APPLIED PHYSICS LETTERS 90/3 033507_1-3 （2007年） [査読] 有 [国際共著論文] 該当する [責任著者・共著者の別] 共著者 [著者] [責任著者]Neil M. Zimmerman,Akira Fujiwara [共著者]Brian J. Simonds,Akira Fujiwara,Yukinori Ono,Yasuo Takahashi,Hiroshi Inokawa [84]. Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K PHYSICAL REVIEW B 74/23 235317_1-9 （2006年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Yukinori Ono,Hiroshi Inokawa [共著者]Jean-Francois Morizur,Katsuhiko Nishiguchi,Kei Takashina,Hiroshi Yamaguchi,Kazuma Hiratsuka,Seiji Horiguchi,Hiroshi Inokawa,Yasuo Takahashi [85]. Electrostatically gated Si devices: Coulomb blockade and barrier capacitance APPLIED PHYSICS LETTERS 89/5 052102_1-3 （2006年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 共著者 [著者] [責任著者]Neil M. Zimmerman,Akira Fujiwara [共著者]Akira Fujiwara,Hiroshi Inokawa,Yasuo Takahashi [86]. Quantum effects in the capacitance between a pair of thin and slightly separated SrTiO3 slabs: A first-principles study PHYSICAL REVIEW B 74/3 035408_1-6 （2006年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Kazuyuki Uchida,Hiroshi Inokawa [共著者]Hiroyuki Kageshima,Hiroshi Inokawa [87]. Molecular-Mediated Single-Electron Devices Operating at Room Temperature JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 45/5A 4285-4289 （2006年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Touichiro Goto,Hiroshi Inokawa [共著者]Katsuhiko Degawa,Hiroshi Inokawa,Kazuaki Furukawa,Hiroshi Nakashima,Koji Sumitomo,Takafumi Aoki,Keiichi Torimitsu [88]. Room-temperature-operating data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology APPLIED PHYSICS LETTERS 88/18 183101_1-3 （2006年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Katsuhiko Nishiguchi,Hiroshi Inokawa [共著者]Akira Fujiwara,Yukinori Ono,Hiroshi Inokawa,Yasuo Takahashi [89]. Studies on Metal-Oxide-Semiconductor Field-Effect Transistor Low-Frequency Noise for Electrometer Applications JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 45/4B 3606-3608 （2006年） [査読] 有 [国際共著論文] 該当しない [責任著者・共著者の別] 責任著者 [著者] [責任著者]Nicolas Clement,Hiroshi Inokawa [共著者]Hiroshi Inokawa,Yukinori Ono

[1]. Folded-Dipole Antenna Geometrical Analysis for THz Microbolometer
IEEE Access 11/ 25713-25722 （2023年） [査読] 有 [国際共著論文] 該当する
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[2]. Refractive Index Measurement Using SOI Photodiode with SP Antenna toward SOI CMOS-Compatible Integrated Optical Biosensor
Sensors 23/2 568_1-568_17 （2023年） [査読] 有 [国際共著論文] 該当しない
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[3]. Angle-sensitive pixel based on silicon-on-insulator p-n junction photodiode with aluminum grating gate electrode
IEICE Electronics Express 19/21 20220428_1-20220428_5 （2022年） [査読] 有 [国際共著論文] 該当しない
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[4]. Dynamic Single-Electron Transistor Modeling for High-Frequency Capacitance Characterization
Applied Sciences 12/16 8139_1-8139_11 （2022年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
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[5]. Responsivity and NEP Improvement of Terahertz Microbolometer by High-Impedance Antenna
Sensors 22/14 5107_1-5107_17 （2022年） [査読] 有 [国際共著論文] 該当する
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[6]. High-Frequency Rectifying Characteristics of Metallic Single-Electron Transistor with Niobium Nanodots
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[7]. FDTD Study on Evolution of Trimer Silver@Silica Nanospheres to Dimer for SERS Characteristics
Plasmonics / - （2021年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] Anitharaj Nagarajan, Aruna Priya Panchanathan, Pandian Chelliah, Hiroaki Satoh, Hiroshi Inokawa [DOI]
[8]. Measurement of Thermal Conductivity and Thermal Diffusivity of 1-Dimensional-System Material by Scanning Electron Microscopy and Infrared Thermography
AIP Advances 11/9 095101_1-095101_6 （2021年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] Palanisamy Baskaran, Ryo Nanao, Yojiro Yamanashi, Masaki Sakaida, Yuhei Suzuki, Mani Navaneethan, Kuruvankatil Dharmajan Nisha, Yasuhiro Hayakawa, Hiroshi Inokawa, Masaru Shimomura, Kenji Murakami, Hiroya Ikeda [DOI]
[9]. Real-time FPGA-based signal processing for silicon-on-insulator MOSFET single-photon detector: study on photon number statistics
Jpn. J. Appl. Phys. 60/ 092004_1-092004_5 （2021年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] Revathi Manivannan, Hiroaki Satoh, Hiroshi Inokawa [DOI]
[10]. Utility of a Reverse Double-drift Structure for Fabricating GaN IMPATT Diode Operating in the Terahertz Regime
Journal of Nano- and Electronic Physics 13/3 03014-1-03014-4 （2021年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] Sahanowaj Khan, Rishav Dutta, Aritra Acharyya, Arindam Biswas, Hiroshi Inokawa, Rudra Sankar Dhar [DOI]
[11]. Tunable graphene nanopatch antenna design for on-chip integrated terahertz detector arrays with potential application in cancer imaging
Nanomedicine 16/12 1035-1047 （2021年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] Debabrata Samanta, Karthikeyan MP, Amit Banerjee, Hiroshi Inokawa [DOI]
[12]. Design and Development of Terahertz Medical Screening Devices
Lecture Notes in Electrical Engineering 740/ 395-404 （2021年） [査読] 無 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] Karthikeyan M P, Debabrata Samanta, Amit Banerjee, Arjya Roy, Hiroshi Inokawa [備考] In: Chakraborty M., Jha R.K., Balas V.E., Sur S.N., Kandar D. (eds) Trends in Wireless Communication and Information Security, Springer, Singapore (20
[DOI]
[13]. Nanometer-Scale Photodetectors for High Performance and Unique Functionality
Lecture Notes in Electrical Engineering 740/ 389-394 （2021年） [査読] 無 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] Hiroshi Inokawa, Hiroaki Satoh, Amit Banerjee, Anitharaj Nagarajan, Revathi Manivannan, Alka Singh, Tomoki Nishimura, Koki Isogai [備考] In: Chakraborty M., Jha R.K., Balas V.E., Sur S.N., Kandar D. (eds) Trends in Wireless Communication and Information Security, Springer, Singapore (20
[DOI]
[14]. Angle-Sensitive Detector Based on Silicon-On-Insulator Photodiode Stacked with Surface Plasmon Antenna
Sensors 20/19 5543_1-5543_14 （2020年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] Anitharaj Nagarajan, Shusuke Hara, Hiroaki Satoh, Aruna Priya Panchanathan, Hiroshi Inokawa [DOI]
[15]. Performance Comparison of SOI-Based Temperature Sensors for Room-Temperature Terahertz Antenna-Coupled Bolometers: MOSFET, PN Junction Diode and Resistor
Micromachines 11/8 718_1-718_16 （2020年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] Durgadevi Elamaran, Yuya Suzuki, Hiroaki Satoh, Amit Banerjee, Norihisa Hiromoto, Hiroshi Inokawa [DOI]
[16]. Angular selectivity of SOI photodiode with surface plasmon antenna
IEICE Electronics Express 17/13 20200187_1-20200187_6 （2020年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] Anitharaj Nagarajan, Shusuke Hara, Hiroaki Satoh, Aruna Priya Panchanathan, Hiroshi Inokawa [DOI]
[17]. Si Single-Electron Transistor Characteristics under Photo-Excitation
ECS Transactions 92/4 47-56 （2019年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] Yasuo Takahashi, Michito Sinohara, Masashi Arita, Atsushi Tsurumaki-Fukuchi, Akira Fujiwara, Yukinori Ono, Katsuhiko Nishiguchi, Hiroshi Inokawa [DOI]
[18]. Optimization of electric field enhancement of Ag@SiO2 trimer nanospheres by finite difference time domain method
Applied Surface Science 495/ 107373_1-107373_7 （2019年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] Anitharaj Nagarajan, Aruna Priya Panchanathan, Pandian Chelliah, Hiroaki Satoh, Hiroshi Inokawa [DOI]
[19]. Development of carbon coated NiS2 as positive electrode material for high performance asymmetric supercapacitor
Composites Part B: Engineering 177/ 107373_1-107373_11 （2019年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] Souvik Ghosh, J. Sharath Kumar, Naresh Chandra Murmu, R. Sankar Ganesh, Hiroshi Inokawa, Tapas Kuila [DOI]
[20]. Performance improvement of on-chip integrable terahertz microbolometer arrays using nanoscale meander titanium thermistor
J. Appl. Phys. 125/21 214502_1-214502_12 （2019年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] Amit Banerjee, Hiroaki Satoh, Durgadevi Elamaran, Yash Sharma, Norihisa Hiromoto, Hiroshi Inokawa [DOI]
[21]. Investigation of silicon-on-insulator CMOS integrated thermocouple and heater for antenna-coupled bolometer
Jpn. J. Appl. Phys. 58/ SDDE08_1-SDDE08_7 （2019年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] Durgadevi Elamaran, Hiroaki Satoh, Norihisa Hiromoto, Hiroshi Inokawa [DOI]
[22]. Optimization of Active Surface area of Flower like MoS2 using V-doping towards Enhanced Hydrogen Evolution Reaction in Acidic and Basic Medium
Applied Catalysis B: Environmental 254/ 432-442 （2019年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] Saikat Bolar, Subhasis Shit, J Sharath Kumar, Naresh Chandra Murmu, R Sankar Ganesh, Hiroshi Inokawa, Tapas Kuila [DOI]
[23]. A SILAR method for the fabrication of layer-by-layer assembled Cu2O-reduced graphene oxide composite for non-enzymatic detection of hydrogen peroxide
Materials Research Express 6/2 025045_1-025045_11 （2018年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] J Sharath Kumar, Naresh C Murmu, Amit Banerjee, Ramaraju Sankar Ganesh, Hiroshi Inokawa, Tapas Kuila [DOI]
[24]. Modeling, Simulation, Fabrication, and Characterization of a 10-μW/cm² Class Si-Nanowire Thermoelectric Generator for IoT Applications
IEEE Trans. Electron Devices 65/11 5180-5188 （2018年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] Motohiro Tomita, Shunsuke Oba, Yuya Himeda, Ryo Yamato, Keisuke Shima, Takehiro Kumada, Mao Xu, Hiroki Takezawa, Kohhei Mesaki, Kazuaki Tsuda, Shuichiro Hashimoto, Tianzhuo Zhan, Hui Zhang, Yoshinari Kamakura, Yuhhei Suzuki, Hiroshi Inokawa, Hiroya Ikeda, Takashi Matsukawa, Takeo Matsuki, Takanobu Watanabe [DOI]
[25]. Noise Performance of Magnetic Field Tunable Avalanche Transit Time Source
International Journal of Electronics and Communication Engineering 12/10 718-728 （2018年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] Partha Banerjee, Aritra Acharyya, Arindam Biswas, A. K. Bhattacharjee, Amit Banerjee, Hiroshi Inokawa [DOI]
[26]. 1.0 THz GaN IMPATT Source: Effect of Parasitic Series Resistance
J. Infrared Millim. Terahertz Waves 39/10 954-974 （2018年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] Arindam Biswas, Sayantan Sinha, Aritra Acharyya, Amit Banerjee, Srikanta Pal, Hiroaki Satoh, Hiroshi Inokawa [DOI]
[27]. Application of bow-tie surface plasmon antenna to silicon on insulator nanowire photodiode for enhanced light absorption
IEICE Electronics Express 15/11 20180328_1-20180328_10 （2018年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] Yash Sharma, Hiroaki Satoh, Hiroshi Inokawa [DOI]
[28]. Optimization of narrow width effect on titanium thermistor in uncooled antenna-coupled terahertz microbolometer
Jpn. J. Appl. Phys. 57/4S 04FC09_1-04FC09_7 （2018年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] Amit Banerjee,Hiroaki Satoh,Durgadevi Elamaran,Yash Sharma,Norihisa Hiromoto,Hiroshi Inokawa, [DOI]
[29]. Characterization of platinum and titanium thermistors for terahertz antenna-coupled bolometer applications
Sensors and Actuators: A Physical 273/ 49-57 （2018年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] Amit Banerjee,Hiroaki Satoh,Yash Sharma,Norihisa Hiromoto,Hiroshi Inokawa, [DOI]
[30]. Modified electrochemical charge storage properties of h-BN/rGO superlattice through the transition from n to p type semiconductor by fluorine doping
Chem. Eng. J. 339/ 334-345 （2018年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] Sanjit Saha,Pranab Samanta,Naresh C. Murmu,Amit Banerjee,R Sankar Ganesh,Hiroshi Inokawa,Tapas Kuila, [DOI]
[31]. Novel synthesis of a Cu2O-graphene nanoplatelet composite through a two-step electrodeposition method for selective detection of hydrogen peroxide
New J. Chem. 42/5 3574-3581 （2018年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] J. Sharath Kumar,Naresh Chandra Murmu,Pranab Samanta,Amit Banerjee,R. Sankar Ganesh,Hiroshi Inokawa,Tapas Kuila, [DOI]
[32]. Width dependence of platinum and titanium thermistor characteristics for application in room-temperature antenna-coupled terahertz microbolometer
Jpn. J. Appl. Phys. 56/4S 04CC07_1-5 （2017年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] Amit Banerjee,Hiroaki Satoh,Ajay Tiwari,Catur Apriono,Eko Tjipto Rahardjo,Norihisa Hiromoto,Hiroshi Inokawa [DOI]
[33]. Strong Quantum Confinement Effects in Nanometer Devices with Graphene Directly Grown on Insulator by Catalyst-free Chemical Vapor Deposition
Current Graphene Science 1/1 44-48 （2017年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] Hiroto Sato,Atsushi Nakamura,Amit Banerjee,Kenji Yamada,Hiroaki Satoh,Jiro Temmyo,Hiroshi Inokawa, [DOI]
[34]. Identification of Double Quantum Dots in Nanowire Devices by Single-Gate Sweeps
JJAP Conf. Proc. 4/ - （2016年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] Hiroshi Inokawa,Yasuo Takahashi, [DOI]
[35]. Fabrication and single-electron-transfer operation of a triple-dot single-electron transistor
J. Appl. Phys. 118/21 214305_1-214305_6 （2015年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Mingyu Jo,Takafumi Uchida,Atsushi Tsurumaki-Fukuchi,Masashi Arita,Akira Fujiwara,Yukinori Ono,Katsuhiko Nishiguchi,Hiroshi Inokawa,Yasuo Takahashi, [共著者]Mingyu Jo,Takafumi Uchida,Atsushi Tsurumaki-Fukuchi,Masashi Arita,Akira Fujiwara,Yukinori Ono,Katsuhiko Nishiguchi,Hiroshi Inokawa,Yasuo Takahashi, [備考] IF 2.183 (2014)
[DOI]
[36]. Fabrication and analytical modeling of integrated heater and thermistor for antenna-coupled bolometers
Sensors and Actuators: A Physical 222/ 160-166 （2015年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Ajay Tiwari,Hiroaki Satoh,Makoto Aoki,Masanori Takeda,Norihisa Hiromoto,Hiroshi Inokawa [共著者]Ajay Tiwari,Hiroaki Satoh,Makoto Aoki,Masanori Takeda,Norihisa Hiromoto,Hiroshi Inokawa, [備考] IF1.943(2013)
[DOI]
[37]. THz Antenna-Coupled Microbolometer with 0.1-µm-wide Titanium Thermistor
International Journal of ChemTech Research 7/2 1019-1026 （2015年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Ajay Tiwari,Hiroaki Satoh,Makoto Aoki,Masanori Takeda,Norihisa Hiromoto,Hiroshi Inokawa [共著者]Ajay Tiwari,Hiroaki Satoh,Makoto Aoki,Masanori Takeda,Norihisa Hiromoto,Hiroshi Inokawa [備考] IF不明
[URL]
[38]. Analysis of RF Reflection Method for MOSFET Electrometer Fabricated by Standard Integrated-Circuit Technology
International Journal of ChemTech Research 7/3 1623-1627 （2015年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Hiroshi Inokawa,Mitsuru Kawai,Hiroaki Satoh, [共著者]Hiroshi Inokawa,Mitsuru Kawai,Hiroaki Satoh, [備考] IF不明
[URL]
[39]. Effects of substrate voltage on noise characteristics and hole lifetime in SOI metal-oxide-semiconductor field-effect transistor photon detector
Optics Express 22/18 22072-22079 （2014年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] Dedy Septono Catur Putranto,Purnomo Sidi Priambodo,Djoko Hartanto,Wei Du,Hiroaki Satoh,Atsushi Ono,Hiroshi Inokawa, [備考] IF3.525(2013)
[URL] [DOI]
[40]. Broadband absorption enhancement of thin SOI photodiode with high-density gold nanoparticles
Optical Materials Express 4/4 725-732 （2014年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] Atsushi Ono,Yasushi Enomoto,Yasufumi Matsumura,Hiroaki Satoh,Hiroshi Inokawa [備考] 2012 IF 2.616
[DOI]
[41]. High-speed operation of Si single-electron transistor
ECS Transactions 58/9 73-80 （2013年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Yasuo Takahashi,Masashi Arita,Akira Fujiwara,Hiroshi Inokawa [共著者]Hiroto Takenaka,Takafumi Uchida [DOI]
[42]. Material Dependence of Metal Grating on SOI Photodiode for Enhanced Quantum Efficiency
IEEE Photonics Technology Letters 25/12 1133-1136 （2013年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] Hiroaki Satoh,Ken Kawakubo,Atsushi Ono,Hiroshi Inokawa [備考] IF 2.038
[DOI]
[43]. Enhancement of SOI Photodiode Sensitivity by Aluminum Grating
ECS Transactions 53/5 127-130 （2013年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] Hiroshi Inokawa,Hiroaki Satoh,Ken Kawakubo,Atsushi Ono [備考] IF不明
[44]. Analysis of Microbolometer Characteristics for Antenna-Coupled THz Detectors
Asian J. Chem. 25/Supplementary Issue S358-S360 （2013年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Hiroshi Inokawa,Ajay Tiwari [共著者]Ajay Tiwari,Hiroaki Satoh,Makoto Aoki,Masanori Takeda,Norihisa Hiromoto
[45]. Enhanced Visible Light Sensitivity by Gold Line-and Space Grating Gate Electrode in Thin Silicon-On-Insulator p-n Junction Photodiode
IEEE Trans. Electron Devices 60/2 812-818 （2013年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Hiroshi Inokawa,Hiroaki SATOH [共著者]Hiroaki SATOH,Atushi ONO
[46]. A differential smoothing technique for the extraction of MOSFET threshold voltage using extrapolation in the linear region
Solid-State Electronics 76/* 5-7 （2012年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Hiroshi Inokawa,Hongguan Yang [共著者]Hongguan Yang
[47]. Single-Photon Detection by a Simple Silicon-on Insulator Metal-Oxide-Semiconductor Field-Effect Transistor
Japanese Journal of Applied Physics 51/6 06FE01_1-06FE01_4 （2012年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Hiroshi Inokawa,Wei Du [共著者]Wei Du,Hiroaki SATOH,Atushi ONO
[48]. Effect of Arrangement of Input Gates on Logic Switching Characteristics of Nanobot Array Device
IEICE Transactions on Electronics E95.C/5 865-870 （2012年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Yasuo Takahashi,Hiroshi Inokawa,Jung-Bum Choi [共著者]Ming JO,Yuki KATO,Masashi ARITA,Yukinori ONO,Akira FUJIWARA
[49]. Surface Plasmon Antenna with Gold Line and Space Grating for Enhanced Visible Light Detection by Silicon-On-Insulator Metal-Oxide-Semiconductor Photodiode
IEEE Trans. Nanotechnol 11/2 346-351 （2012年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] Hiroshi Inokawa,Hiroaki Satoh
[50]. Sensitivity Improvement of Silicon-On-Insulator Photodiode by Gold Nanoparticles with Substrate Bias Control
APPLIED PHYSICS LETTERS 99/6 062105_1-3 （2011年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Atsushi Ono,Hiroshi Inokawa [共著者]Yuki Matsuo,Hiroaki Satoh
[51]. SOI metal-oxide-semiconductor field-effect transistor photon detector based on single-hole counting
OPTICS LETTERS 36/15 2800-2802 （2011年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Wei Du,Hiroshi Inokawa [共著者]Hiroaki Satoh,Atsushi Ono
[52]. Electrical Characterization of Terphenyl-Based Molecular Devices
JAPANESE JOURNAL OF APPLIED PHYSICS 50/7 071603-1~6 （2011年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Touichiro Goto,Hiroshi Inokawa [共著者]Yukinori Ono,Akira Fujiwara,Keiichi Torimitsu
[53]. 表面プラズモンを利用した光検出器の性能向上(解説)
表面技術 62/6 291-295 （2011年） [査読] 無 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] 小野篤史,佐藤弘明,猪川洋
[54]. Single-Photon Detector Based on MOSFET Electrometer with Single-Electron Sensitivity
Advanced Materials Research 222/ 3-7 （2011年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Hiroshi Inokawa [共著者]Wei Du,Mitsuru Kawai,Hiroaki Satoh,Atsushi Ono,Vipul Singh
[55]. High-Efficiency SOI Photodetector Utilizing Surface Plasmon Resonance in Gold Corrugated Structure
Advanced Materials Research 222/ 154-157 （2011年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Atsushi Ono,Hiroshi Inokawa [共著者]Hiroaki Satoh,Hiroshi Inokawa
[56]. Investigation of Adhesion Materials for Gold Line-and-Space Surface Plasmon Antenna on SOI-MOS Photodiode
Advanced Materials Research 222/ 201-204 （2011年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Hiroshi Inokawa,Hiroaki Satoh [共著者]Yuki Matsuo,Hiroshi Inokawa,Atsushi Ono
[57]. Si Nanodot Device Fabricated by Thermal Oxidation and Their Applications
Key Engineering Materials 470/ 175-183 （2011年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]Yasuo Takahashi [共著者]Mingyu Jo,Takuya Kaizawa,Yuki Kato,Masashi Arita,Akira Fujiwara,Yukinori Ono,Hiroshi Inokawa,Jung-Bum Choi
[58]. Fabrication Method of Sub-100 nm Metal-Oxide-Semiconductor Field-Effect Transistor with Thick Gate Oxide
JAPANESE JOURNAL OF APPLIED PHYSICS 49/12 128002_1-2 （2010年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Vipul Singh,Hiroshi Inokawa [共著者]Hiroshi Inokawa,Tetsuo Endoh,Hiroaki Satoh
[59]. Low Frequency Noise Characterization in Metal-Oxide-Semiconductor Field-Effect Transistor Based Charge Transfer Device at Room and Low Temperatures
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 49/3 034203_1-4 （2010年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Vipul Singh,Hiroshi Inokawa [共著者]Hiroshi Inokawa,Tetsuo Endoh,Hiroaki Satoh
[60]. Fabrication of double-dot single-electron transistor in silicon nanowire
THIN SOLID FILMS 518/6(1) S186-S189 （2010年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]Mingyu Jo [共著者]Takuya Kaizawa,Masashi Arita,Akira Fujiwara,Yukinori Ono,Hiroshi Inokawa,Jung-Bum Choi,Yasuo Takahashi
[61]. ナノビジョンサイエンス-画像技術の新展開-(書評)
電子情報通信学会誌 92/12 1081-1081 （2009年） [査読] 無 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] 猪川洋
[62]. Analysis of Current Noise in MOSFET-Based Charge-Transfer Device
Journal of Automation, Mobile Robotics & Intelligent Systems 3/4 72-75 （2009年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Hiroshi Inokawa [共著者]Vipul Singh,Hiroaki Satoh
[63]. Geometrical effect in submicrometer channel organic field effect transistors
THIN SOLID FILMS 518/2 579-582 （2009年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Touichiro Goto,Hiroshi Inokawa [共著者]Hiroshi Inokawa,Keiichi Torimitsu
[64]. Single-Electron Device With Si Nanodot Array and Multiple Input Gates
IEEE Trans. Nanotechnol. 8/4 535-541 （2009年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]Takuya Kaizawa,Yasuo Takahashi [共著者]Masashi Arita,Akira Fujiwara,Kenji Yamazaki,Yukinori Ono,Hiroshi Inokawa,Yasuo Takahashi,Jung-Bum Choi
[65]. Full Adder Operation Based on Si Nanodot Array Device with Multiple Inputs and Outputs
International Journal of Nanotechnology and Molecular Computation 1/2 58-69 （2009年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]Kaizawa Takuya,Takahashi Yasuo [共著者]Jo Mingyu,Arita Masashi,Fujiwara Akira,Yamazaki Kenji,Ono Yukinori,Inokawa Hiroshi,Takahashi Yasuo,Choi Jung-Bum
[66]. Single-Electron-Resolution Electrometer Based on Field-Effect Transistor
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 47/11 8305-8310 （2008年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Katsuhiko Nishiguchi,Hiroshi Inokawa [共著者]Charlie Koechlin,Yukinori Ono,Akira Fujiwara,Hiroshi Inokawa,Hiroshi Yamaguchi
[67]. Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability
JOURNAL OF APPLIED PHYSICS 104/3 033710_1-12 （2008年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]Neil M. Zimmerman,Akira Fujiwara [共著者]William H. Huber,Brian Simonds,Emmanouel Hourdakis,Akira Fujiwara,Yukinori Ono,Yasuo Takahashi,Hiroshi Inokawa,Miha Furlan,Mark W. Keller
[68]. A gate-defined silicon quantum dot molecule
APPLIED PHYSICS LETTERS 92/22 6-6 （2008年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]Hongwu Liu,Yoshiro Hirayama [共著者]Toshimasa Fujisawa,Hiroshi Inokawa,Yukinori Ono,Akira Fujiwara,Yoshiro Hirayama
[69]. ナノメータMOSFETにおける容量パラメータの直接測定
電学論C 128/6 905-911 （2008年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]猪川洋 [共著者]藤原　聡,西口　克彦,小野　行徳,佐藤　弘明
[70]. Pauli-spin-blockade transport through a silicon double quantum dot
PHYSICAL REVIEW B 77/7 073310_1-4 （2008年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]H. W. Liu,Y.Hirayama [共著者]T. Fujisawa,Y. Ono,H. Inokawa,A. Fujiwara,K. Takashina,Y. Hirayama
[71]. Stochastic data processing circuit based on single electrons using nanoscale field-effect transistors
APPLIED PHYSICS LETTERS 92/6 062105_1-3 （2008年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]K. Nishiguchi,H.Inokawa [共著者]Y. Ono,A. Fujiwara,H. Inokawa,Y. Takahashi
[72]. Silicon single-charge transfer devices
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 69/2-3 702-707 （2008年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Yukinori Ono,Hiroshi Inokawa [共著者]Akira Fujiwara,Katsuhiko Nishiguchi,Yasuo Takahashi,Hiroshi Inokawa
[73]. Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires
PHYSICAL REVIEW B 76/7 075332_1-5 （2007年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Daniel Moraru,Yukinori Ono,Hiroshi Inokawa [共著者]Yukinori Ono,Hiroshi Inokawa,Michiharu Tabe
[74]. Infrared detection with silicon nano-field-effect transistors
APPLIED PHYSICS LETTERS 90/22 223108_1-3 （2007年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]K. Nishiguchi,H.Inokawa [共著者]Y. Ono,A. Fujiwara,H. Yamaguchi,H. Inokawa,Y. Takahashi
[75]. Transfer and Detection of Single Electron using Metal-Oxide-Semiconductor Field-Effect-Transistor
IEICE TRANSACTIONS ON ELECTRONICS E90C/5 943 -948 （2007年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] [責任著者]W. C .Zhang,K.Nishiguchi,H.Inokawa,N.J.Wu [共著者]K. Nishiguchi,Y. Ono,A. Fujiwara,H. Yamaguchi,H. Inokawa,Y. Takahashi,N. J. Wu
[76]. Design of a Two-Bit-per-Cell Content-Addressable Memory Using Single-Electron Transistors
Journal of Multiple-Valued Logic and Soft Computing 13/3 249-266 （2007年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]K. Degawa,H.Inokawa [共著者]T. Aoki,T. Higuchi,H. Inokawa,Y. Takahashi
[77]. Field-Effect Transistor with Deposited Graphite Thin Film
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 46/4B 2615-2617 （2007年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Hiroshi Inokawa [共著者]Masao Nagase,Shigeru Hirono,Touichiro Goto,Hiroshi Yamaguchi,Keiichi Torimitsu
[78]. Impact of Space-Energy Correlation on Variable Range Hopping in a Transistor
PHYSICAL REVIEW LETTERS 98/16 166601_1-4 （2007年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]J.-F. Morizur,Y.Ono,H.Inokawa [共著者]Y. Ono,H. Kageshima,H. Inokawa,H. Yamaguchi
[79]. Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 46/4A 1731-1733 （2007年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Touichiro Goto,Hiroshi Inokawa [共著者]Hiroshi Inokawa,Koji Sumitomo,Masao Nagase,Yukinori Ono,Keiichi Torimitsu
[80]. Mechanism of Metal-Semiconductor Transition in Electric Properties of Single-walled Carbon Nanotubes induced by Low-energy Electron Irradiation
JOURNAL OF APPLIED PHYSICS 101/3 034317_1-4 （2007年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]Kenichi Kanzaki [共著者]Satoru Suzuki,Hiroshi Inokawa,Yukinori Ono,Aravind Vijayaraghavan,Yoshihiro Kobayashi
[81]. Fast All-Optical Switching using Ion-Implanted Silicon Photonic Crystal Nanocavities
APPLIED PHYSICS LETTERS 90/3 031115_1-3 （2007年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]Takasumi Tanabe,Masaya Notomi [共著者]Katsuhiko Nishiguchi,Akihiko Shinya,Eiichi Kuramochi,Hiroshi Inokawa,Masaya Notomi
[82]. Long Retention of Gain-Cell Dynamic Random Access Memory With Undoped Memory Node
IEEE ELECTRON DEVICE LETTERS 28/1 48-50 （2007年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Katsuhiko Nishiguchi,Hiroshi Inokawa [共著者]Akira Fujiwara,Yukinori Ono,Hiroshi Inokawa,Yasuo Takahashi
[83]. Charge offset stability in tunable-barrier Si single-electron tunneling devices
APPLIED PHYSICS LETTERS 90/3 033507_1-3 （2007年） [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]Neil M. Zimmerman,Akira Fujiwara [共著者]Brian J. Simonds,Akira Fujiwara,Yukinori Ono,Yasuo Takahashi,Hiroshi Inokawa
[84]. Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K
PHYSICAL REVIEW B 74/23 235317_1-9 （2006年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Yukinori Ono,Hiroshi Inokawa [共著者]Jean-Francois Morizur,Katsuhiko Nishiguchi,Kei Takashina,Hiroshi Yamaguchi,Kazuma Hiratsuka,Seiji Horiguchi,Hiroshi Inokawa,Yasuo Takahashi
[85]. Electrostatically gated Si devices: Coulomb blockade and barrier capacitance
APPLIED PHYSICS LETTERS 89/5 052102_1-3 （2006年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]Neil M. Zimmerman,Akira Fujiwara [共著者]Akira Fujiwara,Hiroshi Inokawa,Yasuo Takahashi
[86]. Quantum effects in the capacitance between a pair of thin and slightly separated SrTiO3 slabs: A first-principles study
PHYSICAL REVIEW B 74/3 035408_1-6 （2006年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Kazuyuki Uchida,Hiroshi Inokawa [共著者]Hiroyuki Kageshima,Hiroshi Inokawa
[87]. Molecular-Mediated Single-Electron Devices Operating at Room Temperature
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 45/5A 4285-4289 （2006年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Touichiro Goto,Hiroshi Inokawa [共著者]Katsuhiko Degawa,Hiroshi Inokawa,Kazuaki Furukawa,Hiroshi Nakashima,Koji Sumitomo,Takafumi Aoki,Keiichi Torimitsu
[88]. Room-temperature-operating data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology
APPLIED PHYSICS LETTERS 88/18 183101_1-3 （2006年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Katsuhiko Nishiguchi,Hiroshi Inokawa [共著者]Akira Fujiwara,Yukinori Ono,Hiroshi Inokawa,Yasuo Takahashi
[89]. Studies on Metal-Oxide-Semiconductor Field-Effect Transistor Low-Frequency Noise for Electrometer Applications
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 45/4B 3606-3608 （2006年） [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Nicolas Clement,Hiroshi Inokawa [共著者]Hiroshi Inokawa,Yukinori Ono

静岡大学

静岡大学教員データベース - 教員個別情報 : 猪川 洋 （Inokawa Hiroshi）

論文 等

静岡大学教員データベース - 教員個別情報 : 猪川洋（Inokawa Hiroshi）

論文　等