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静岡大学教員データベース - 教員個別情報 : 中野 貴之 (Nakano Takayuki)

論文 等

【論文 等】
[1]. Diamond radiation detector with built-in boron-doped neutron converter layer
Physica Status Solidi A 218/ - 2100315 (2021年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [1] Taku Miyake, Hisaya Nakagawa, Tomoaki Masuzawa, Takatoshi Yamada, Takayuki Nakano, Katsuyuki Takagi, Toru Aoki and Hidenori Mimura [DOI]
[2]. Fabrication and Optical characterization of GaN quasi-phase matching crystal by double polarity selective area growth in metal organic vapor phase epitaxy
Functional Materials Letters 14/10 - 2150034 (2021年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] Kai Matsuhisa, Hiroki Ishihara, Mako Sugiura, Yoshimasa Kawata, Atsushi Sugita, Yoku Inoue, Takayuki Nakano [DOI]
[3]. Effective neutron detection using vertical-type BGaN diodes
Journal of Applied Physics 130/12 -- 124501 (2021年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 責任著者
[著者] Takayuki Nakano, Ken Mochizuki, Takuya Arikawa, Hisaya Nakagawa, Shigeyoshi Usami, Yoshio Honda, Hiroshi Amano, Adrian Vogt, Sebastian Schütt, Michael Fiederle, Kazunobu Kojima, Shigefusa F. Chichibu, Yoku Inoue, Toru Aoki [DOI]
[4]. A Study on the growth enhancement effects of chlorine on carbon nanotube forest in chloride-mediated chemical vapor deposition
Japanese Journal of Applied Physics 60/ - 045001 (2021年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] Tatsuhiro Hayashi, Motoyuki Karita, Takayuki Nakano, Yoku Inoue [DOI]
[5]. Study on the mechanical and electrical properties of twisted CNT yarns fabricated from CNTs with various diameters
Carbon 176/ 400-410 (2021年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] Yoku Inoue, Kohei Hayashi, Motoyuki Karita, Takayuki Nakano, Yoshinobu Shimamura, Keiichi Shirasu, Go Yamamoto, Toshiyuki Hashida [DOI]
[6]. Excellent electromagnetic interference shielding characteristics of a unidirectionally oriented thin multiwalled carbon nanotube/polyethylene film
Materials & Design 195/ - 108918 (2020年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] Norikazu Chikyu, Takayuki Nakano, Gunther Kletetschka, Yoku Inoue [DOI]
[7]. Novel method for carbon nanotube growth using vapor-phase catalyst delivery
Functional Materials Letters 13/5 - 2050026 (2020年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] Takayuki Nakano, Takahiro Kikuchi, Yuki Usuda and Yoku Inoue [DOI]
[8]. 両極性同時成長を用いたGaN -QPM 結晶の作製およびSHG に向けた光学特性評価
信学技報 165/ 41-44 (2019年) [査読] 無 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] 松久 快生、小林 佑斗、石原 弘基、杉浦 真子、杉田 篤史、井上 翼、中野 貴之
[9]. Survivability of carbon nanotubes in space
Acta Astronautica 165/ 129-138 (2019年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] Yoji Ishikawa, Yasuhiro Fuchita, Takashi Hitomi, Yoku Inoue, Motoyuki Karita, Kohei Hayashi, Takayuki Nakano, Naoko Baba [DOI]
[10]. Impact of growth temperature on the structural properties of BGaN films grown by metal-organic vapor phase epitaxy using trimethylboron
Japanese Journal of Applied Physics 58/ - SC1042 (2019年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] Kazushi Ebara, Ken Mochizuki, Yoku Inoue, Toru Aoki, Kazunobu Kojima, Shigefusa F. Chichibu, and Takayuki Nakano [DOI]
[11]. Two stepfloating catalyst chemical vapor deposition includingin situfabrication of catalyst nanoparticles and carbon nanotube forestgrowth with low impurity level
Carbon 144/ 152-160 (2018年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] Toshiya Kinoshita, Motoyuki Karita, Takayuki Nakano, Yoku Inoue [DOI]
[12]. Double-Polarity Selective-Area Growth of GaN by Metal-Organic Vapor-Phase Epitaxy Using Narrow-Pitch Patterns
Phys. Status Solidi B 255/5 - 1700475 (2018年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] Hirotaka Yagi, Noriyuki Osumi, Yoku Inoue,Takayuki Nakano [DOI]
[13]. Embedding of copper into submicrometer trenches in a silicon substrate using the molecular precursor solutions with copper nano-powder
Materials Letters 182/ 206-209 (2016年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]Mitsunobu Sato [共著者]Hiroki Nagai,Tatsuya Suzuki,Takayuki Nakano,Mitsunobu Sato
[14]. Study of radiation detection properties of GaN pn diode
Japanese Journal of applied physics 55/ 05FJ02- (2016年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Takayuki Nakano [共著者]Mutsuhito Sugiura, Maki Kushimoto, Tadashi Mitsunari, Kohei Yamashita, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Hidenori Mimura, Toru Aoki, Takayuki Nakano
[15]. Analysis of interface formation mechanism in GaN double-polarity selective-area growth by metalorganic vapor phase epitaxy
Japanese Journal of applied physics 55/ 05FA05- (2016年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Takayuki Nakano [共著者]Kenta Kuze,Noriyuki Osumi,Yohei Fujita, Yoku Inoue, Takayuki Nakano
[16]. Effect of substrate offcut angle on BGaN epitaxial growth
Japanese Journal of applied physics 55/ 05FD05- (2016年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Takayuki Nakano [共著者]Kohei Ueyama, Hidenori Mimura, Yoku Inoue, Toru Aoki, Takayuki Nakano [DOI]
[17]. Cross-linking multiwall carbon nanotubes using PFPA to build robust, flexible and highly aligned large-scale sheets and yarns
Nanotechnology 27/ 115701- (2016年) [査読] 有 [国際共著論文] 該当する
[責任著者・共著者の別] 共著者
[著者] [責任著者]Yoku Inoue [共著者]Kazumichi Nakamura,Yuta Miyasaka,Takayuki Nakano,Gunther Kletetschka
[18]. Tensile mechanical properties of carbon nanotube/epoxy composite fabricated by pultrusion of carbon nanotube spun yarn preform
Composites: Part A 62/ 32-38 (2014年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]Yoshinobu Shimamura [共著者]Yoshinobu Shimamura, Kahori Oshima, Keiichiro Tohgo,Tomoyuki Fujii, Keiichi Shirasu, Go Yamamoto,Toshiyuki Hashida, Ken Goto, Toshio Ogasawara, Kimiyoshi Naito,Takayuki Nakano,Yoku Inoue
[19]. 紫外線イメージング技術
画像ラボ 25/4 14-19 (2014年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]中野 貴之 [共著者]石上 善浩
[20]. Neutron detection using boron gallium nitride semiconductor material
APL Material 2/ - (2014年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Takayuki Nakano [共著者]Katsuhiro Atsumi,Yoku Inoue,Hidenori Mimura,Toru Aoki,Takayuki Nakano
[21]. Double polar selective area growth of GaN MOVPE by using carbon mask layers
Japanese Journal of Applied Physics 52/(num) 08JB26-1-5 (2013年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] Yohei Fujita,Yasushi Takano,Yoku Inoue,Masatomo Sumiya, Shunro Fuke,Takayuki Nakano
[22]. 紫外線イメージング
映像情報メディア学会誌 67/6 451-455 (2013年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] 中野 貴之
[23]. カーボンマスクを用いたGaN両極性同時成長プロセス
信学技報 113/39 13-18 (2013年) [査読] 無 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] 藤田陽平、高野泰、井上翼、中野貴之
[24]. 中性子半導体検出器の実現に向けたBGaN薄膜の作製と評価
信学技報 113/39 19-12 (2013年) [査読] 無 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] 渥美勝浩、三宅亜紀、三村秀典、井上翼、青木徹、中野貴之
[25]. Study of Growth Enhancement of Multiwalled Carbon Nanotubes by Chlorine-Assisted Chemical Vapor Deposition
Japanese Journal of Applied Physics 52/ 035202-1-6 (2013年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]Crina Ghemes [共著者]Adrian Ghemes,Morihiro Okada,Hidenori Mimura,Takayuki Nakano,Yoku Inoue
[26]. Control of In Surface Segregation and Inter-Diffusion in GaAs on InGaP Grown by Metal–Organic Vapor Phase Epitaxy
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 51/ 055601-1-4 (2012年) [査読] 有
[責任著者・共著者の別] 共著者
[著者] [責任著者]Yasuyuki Fukushima [共著者]Takayuki Nakano,Yoshiaki Nakano,,Yukihiro Shimogaki
[27]. Precise structure control of GaAs/InGaP hetero-interface using metal organic vapor phase epitaxy and its abruptness analyzed by STEM
JOURNAL OF CRYSTAL GROWTH 347/1 25-30 (2012年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Takayuki Nakano [共著者]Tomonari Shioda,Naomi Enomoto,Eiji Abe,Masakazu Sugiyama,Yoshiaki Nakano,Yukihiro Shimogaki
[28]. Seebeck Effects and Electronic Thermal Conductivity of IV–VI Materials
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 50/ 031302-1-5 (2011年) [査読] 有
[責任著者・共著者の別] 共著者
[著者] [責任著者]Akihiro Ishida [共著者]Tomohiro Yamada,Takayuki Nakano,Yasushi Takano,,Sadao Takaoka
[29]. Fabrication and performance of photocatalytic GaN powder
Advanced Materials Research 222/ 142-145 (2011年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Takayuki Nakano [共著者]Masateru Hamada,Shunro Fuke
[30]. Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 50/ 011201-3 (2011年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]Osamu Ichikawa [共著者]Noboru Fukuhara,Masahiko Hata,Takayuki Nakano,Masakazu Sugiyama,Yoshiaki Nakano,Yukihiro Shimogaki
[31]. Fabrication and hard -ray photoemission analysis of photocathodes with sharp solar-blind sensitivity using AlGaN films grown on Si substrates
APPLIED SURFACE SCIENCE 256/14 4442-4446 (2010年) [査読] 有
[責任著者・共著者の別] 共著者
[著者] [責任著者]Masatomo Sumiya [共著者]Yutaro Kamob,Naoki. Ohashi,Masaki Takeguchi,Yoon-Uk Heo,Hideki Yoshikawa,Shigenori Ueda,Keisuke Kobayashi,Tokuaki Nihashi,Minoru Hagino,Takayuki Nakano,Shunro Fuke
[32]. Epitaxial growth of high purity cubic InN films on MgO substrates using Hf buffer layers by pulsed laser deposition
JOURNAL OF SOLID STATE CHEMISTRY 182/10 2887-2889 (2009年) [査読] 有
[責任著者・共著者の別] 共著者
[著者] [責任著者]R. Ohba [共著者]J. Ohta,K. Shimomoto,T. Fujii,K. Okamoto,A. Aoyama,T. Nakano,A. Kobayashi,H. Fujioka,M. Oshima
[33]. Lateral Polarity Control in GaN Based on Selective Growth Procedure Using Carbon Mask Layers
Applied Physics Express 2/ 101001 (2009年) [査読] 有
[責任著者・共著者の別] 共著者
[著者] [責任著者]Hisashi Matsumura [共著者]Yasuo Kanematsu,Takayoshi Shimura,Takayuki Tamaki,Yasuyuki Ozeki,Kazuyoshi Itoh,Masatomo Sumiya,Takayuki Nakano,,Shunro Fuke
[34]. GROWTH AND PROPERTIES OF ZNO FILMS GROWN USING PA-MOVPE WITH DMZN AND N2O
Journal of Automation, Mobile Robotics & Intelligent Systems 3/4 124-126 (2009年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Takayuki Nakano [共著者]Kazuki Nishimoto,Masatomo Sumiya,Shunro Fuke
[35]. Epitaxial growth of GaN on single crystal Mo substrates using HfN buffer layers
JOURNAL OF CRYSTAL GROWTH 311/ 1311-1315 (2009年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]Koichiro Okamoto [共著者]Shigeru Inoue,Takayuki Nakano,Jitsuo Ohta,Hiroshi Fujioka
[36]. Competitive Kinetics Model to Explain Surface Segregation of Indium during InGaP Growth by Using Metal Organic Vapor Phase Epitaxy
Japanese Journal of Applied Physics 48/011101 1-5 (2009年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Takayuki Nakano [共著者]Tomonari Shioda,Masakazu Sugiyama,Yoshiaki Nakano,,Yukihiro Shimogaki
[37]. Kinetics of Subsurface Formation during Metal-Organic Vapor Phase Epitaxy Growth of InP and InGaP
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 47/3 1473-1478 (2008年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Takayuki Nakano [共著者]Masakazu Sugiyama,Yohiaki Nakano,Yukihiro Shimogaki
[38]. Abrupt InGaP/GaAs heterointerface grown by optimized gas-switching sequence in metal organic vapor phase epitaxy
APPLIED PHYSICS LETTERS 92/11 112106-112108 (2008年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Takayuki Nakano [共著者]Tomonari Shioda,Eiji Abe,Masakazu Sugiyama,Naomi Enomoto,Yoshiaki Nakano,Yukihiro Shimogaki
[39]. Growth of single crystalline GaN on silver mirrors
APPLIED PHYSICS LETTERS 91/19 191905-191907 (2007年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]Shigeru Inoue [共著者]Kouichiro Okamoto,Takayuki Nakano,Jitsuo Ohta,Hiroshi Fujioka
[40]. Epitaxial growth of AlN on single crystal Mo substrates
THIN SOLID FILMS 516/15 4809-4812 (2007年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]K. Okamoto [共著者]S. Inoue,T. Nakano,T.-W. Kim,M. Oshima,H. Fujioka
[41]. High resolution depth profile of the InGaP-on-GaAs heterointerface by FE-AES and its relationship to device properties
JOURNAL OF CRYSTAL GROWTH 298/ 85-89 (2007年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]O. Ichikawa [共著者]N. Fukuhara,M. Hata,T. Nakano,M. Sugiyama,Y. Shimogaki,Y. Nakano
[42]. Kinetic Analysis on the Surface Adsorption Layer in GaAs (001) Metalorganic Vapor Phase Epitaxy by in situ Reflectance Anisotropy Spectroscopy
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 46/10A 6519-6524 (2007年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]Momoko Deura [共著者]Masakazu Sugiyama,Takayuki Nakano,Yoshiaki Nakano,Yukihiro Shimogaki
[43]. Epitaxial growth of AlN films on Rh ultraviolet mirrors
APPLIED PHYSICS LETTERS 19/13 131910-131912 (2007年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]Shigeru Inoue [共著者]Kouichiro Okamoto,Takayuki Nakano,Jituo Ohta,Hiroshi Fujioka
[44]. Zコントラスト法による化合物半導体へテロ界面急峻性評価
まてりあ 45/12 853- (2006年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]中野 貴之 [共著者]杉山正和,阿部英司,中野義昭,霜垣幸浩
[45]. Role of surface diffusion during Selective Area MOVPE growth of InP
THIN SOLID FILMS 498/ 163-166 (2006年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]N. Waki [共著者]T. Nakano,M. Sugiyma,Y. Nakano,Y. Shimogaki
[46]. Novel gas-switching sequence using group-III pre-flow (GIIIP) method for fabrication of InGaP on GaAs hetero-interface by MOVPE
JOURNAL OF CRYSTAL GROWTH 296/ 179-185 (2006年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Takayuki Nakano [共著者]Yoshiaki Nakano,Yukihiro Shimogaki
[47]. Control of abnormal edge growth in selective area MOVPE of InP
JOURNAL OF CRYSTAL GROWTH 287/ 668-672 (2006年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 共著者
[著者] [責任著者]M. Sugiyma [共著者]N. Waki,Y. Nobumori,H. Song,T. Nakano,T. Arakawa,Y. Nakano,Y. Shimogaki
[48]. Characteristics of single crystalline AlN films grown on Ru(0001) substrates
JOURNAL OF CRYSTAL GROWTH 297/ 317-321 (2006年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Shigeru Inoue [共著者]Kouichiro Okamoto,Takayuki Nakano,Jituo Ohta,Hiroshi Fujioka
[49]. The role of the surface adsorption layer during MOVPE growth analyzed by the flow modulation method
JOURNAL OF CRYSTAL GROWTH 272/ 15-23 (2004年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Takayuki Nakano [共著者]Masakazu Sugiyama,Yoshiaki Nakano,Yukihiro Shimogaki
[50]. Kinetic ellipsometry measurement of InGaP/GaAs hetero-interface formation in MOVPE
JOURNAL OF CRYSTAL GROWTH 221/ 136-141 (2000年) [査読] 有 [国際共著論文] 該当しない
[責任著者・共著者の別] 責任著者
[著者] [責任著者]Takayuki Nakano [共著者]Yoshiaki Nakano,Yukihiro Shimogaki